CHENMKO ENTERPRISE CO.

,LTD
2SB772PT
SMALL FLAT
PNP Epitaxial Transistor
VOLTAGE 30 Volts CURRENT 3 Ampere

APPLICATION
* Power driver and Dc to DC convertor .

FEATURE
* Small flat package. (SC-62/SOT-89) SC-62/SOT-89
* Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-2A)
* High speed switching time: tstg= 1.0uSec (typ.)
* PC= 1.5 W (mounted on ceramic substrate).
4.6MAX. 1.6MAX.
* High saturation current capability.
1.7MAX. 0.4+0.05

CONSTRUCTION

2.5+0.1
4.6MAX.
* PNP Switching Transistor

0.8MIN.
MARKING +0.08
0.45-0.05
* hFE Classification Q: Q72 +0.08 +0.08
0.40-0.05 0.40-0.05
P: 772
1.50+0.1 1.50+0.1
E: E72

1 2 3
1 Base
2 Collector ( Heat Sink )
CIRCUIT 3 Emitter

1
B
2
C
3
E
Dimensions in millimeters SC-62/SOT-89

MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted )

RATINGS CONDITION SYMBOL MIN. MAX. UNITS

Collector - Base Voltage Open Emitter VCBO - -40 Volts

Collector - Emitter Voltage Open Base VCEO - -30 Volts

Emitter - Base Voltage Open Collector VEBO - -5 Volts

Collector Current DC IC - -3 Amps

Peak Collector Current ICM - -3 Amps

Peak Base Current IBM - -0.5 Amps

Total Power Dissipation TA ≤ 25OC; Note 1 PTOT - 1500 mW

o
Storage Temperature TSTG -55 +150 C
o
Junction Temperature TJ - +150 C
o
Operating Ambient Temperature TAMB -55 +150 C

Note
1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t.
2. Measured at Pulse Width 300 us, Duty Cycle 2%.
2003-8
 RATING CHARACTERISTIC CURVES ( 2SB772PT )

CHARACTERISTICS ( At TA = 25oC unless otherwise noted )

PARAMETERS CONDITION SYMBOL MIN. TYPE MAX. UNITS

Collector Cut-off Current IE=0; VCB=-30V ICBO - - -1.0 uA

Emitter Cut-off Current IC=0; VEB=-3V IEBO - - -1.0 uA

VCE=-2V; Note 1
DC Current Gain IC=-0.02A hFE 30 - -
IC=-1.0A; Note 2 100 160 500

Collector-Emitter Saturation Voltage IC=-2A; IB=-0.2A VCEsat - -0.3 -0.5 Volts

Base-Emitter Saturatio Voltage IC=-2A; IB=-0.2A VBEsat - -1.0 -2.0 Volts

IE=ie=0; VCB=-10V;
Collector Capacitance CC - 55 - pF
f=1MHz

IC=-0.1A; VCE=-5.0V;
Transition Frequency fT - 100 - MHz
f=100MHz

SWITCHING TIMES ( Between 10% and 90% levels )

PARAMETERS CONDITION SYMBOL MIN. TYPE MAX. UNITS
OUTPUT
Turn-on Time IB2 ton - 0.1 - uSec
IB2
INPUT
30 ohmS

IB1
Storage Time ts - 1.0 - uSec
20uSec IB1
-IB1=IB2=0.05A
Fall Time Duty cycle<1% -30V tf - 0.1 - uSec

Note :
1. Pulse test: tp ≤ 300uSec; δ ≤ 0.02.
2. hFE(2) Classification Q: 100 to 200, P: 160 to 320, E: 250 to 500.
 RATING CHARACTERISTIC CURVES ( 2SB772PT )

Typical Electrical Characteristics

Figure 1. CC - Reverse VCB Figure 2. Cutoff Frequency - IC

3000 3000

V CE =-5V
COLLECTOR CAPACITANCE CC (pF)

1000 1000

CUTOFF FREQUENCY (MHz)

100 100

10 10

1 1
-0.1 -0.3 -1.0 -3.0 -10 -30 -100 -1 -10 -100 -1000

COLLECTOR-BASE REVERSE BIAS VOLTAGE V CB (V) COLLECTOR CURRENT I C (mA)

Figure 3. hFE - IC Figure 4. PC - TA

1000 1.5
COLLECTOR POWER DISSIPATION PC (W)

COMMON EMITTER 1.4 (1) Mounted on ceramic substrate

(1)
V CE =-2V ( 250mm 2x0.8t )
500 (2) No heat sink
1.2
DC CURRENT GAIN hFE

300
1.0

0.8
100

0.6 (2)
50
0.4
30
0.2

10 0
-10 -30 -100 -300 -1000 -3000 0 20 40 60 80 100 120 140 160

COLLECTOR CURRENT I C (mA) AMBIENT TEMPERATURE T A ( OC)

Figure 5. VCE(sat) - IC Figure 6. VBE(sat) - IC

-1 -10
COLLECTOR-EMITTER SATURATION VOLTAGE

COMMON EMITTER COMMON EMITTER

BASE-EMITTER SATURATION VOLTAGE

-0.5 -5
I C /I B =10 I C /I B =10
-0.3 -3
VCE(sat) (V)

VBE(sat) (V)

-0.1 -1

-0.05 -0.5

-0.03 -0.3

-0.01 -0.1
-10 -30 -100 -300 -1000 -3000 -10 -30 -100 -300 -1000 -3000

COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)

 RATING CHARACTERISTIC CURVES ( 2SB772PT )

Typical Electrical Characteristics

Figure 9. Safe Operation Area

-30000

-10000 1 mS
COLLECTOR CURRENT IC (mA)

-5000
-3000

-1000 100 mS
-500
-300 1S

-100 Single nonrepetitive pulse

TA=25OC
-50 Curve must be derated linearly
-30 with increase in temperature
Tested without a substrate
-10
-0.1 -0.3 -1.0 -3.0 -10 -30 -100

COLLECTOR-EMITTER VOLTAGE V CE (V)