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wz3 Dioda Shotkey Barrier

This document provides specifications for the ZOWIE WZ3PK860SH Schottky Barrier Diode. It is a 60V/8A diode in a lead-free, plastic ZPAK package. Key features include low forward voltage, high current capability, and high efficiency. It is intended for use in applications such as switching power supplies, portable equipment battery supplies, high frequency rectification, and DC/DC converters.

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0% found this document useful (0 votes)
63 views2 pages

wz3 Dioda Shotkey Barrier

This document provides specifications for the ZOWIE WZ3PK860SH Schottky Barrier Diode. It is a 60V/8A diode in a lead-free, plastic ZPAK package. Key features include low forward voltage, high current capability, and high efficiency. It is intended for use in applications such as switching power supplies, portable equipment battery supplies, high frequency rectification, and DC/DC converters.

Uploaded by

bengkel_eric
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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ZOWIE Schottky Barrier Diode (60V / 8A)

Preliminary
WZ3PK860SH OUTLINE DIMENSIONS

Case : Z3PAK Unit : mm

FEATURES Top View Bottom View Pad Layout

* Halogen-free type 2.0 ± 0.15 3.2± 0.15


0.132 (3.36)
* Lead free product, compliance to RoHS
MAX.
* Lead less chip form, no lead damage

4.6± 0.15

0.191 (4.86)
6.5± 0.15
* Low power loss, High efficiency

MIN.
0.280 (7.11)
* High current capability, low VF

REF.
* Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
TM
* Patented ZPAK Package Technology 1.4± 0.15
4.0± 0.15
0.055 (1.39)

0.055 (1.40)
MIN.

MIN.
1.048± 0.15 1.0± 0.15
0.072 (1.84)
APPLICATION MAX.
* Switching mode power supply applications

1.2± 0.15
* Portable equipment battery applications LEFT PIN BOTTOMSIDE
RIGHT PIN HEAT SINK
* High frequency rectification
* DC / DC Converter
* Designed as bypass diodes for solar panels
MARKING

MECHANICAL DATA

860S
Z3PK
Case : Packed with FRP substrate and epoxy underfilled
Terminals : Pure Tin plated (Lead-Free),
solderable per MIL-STD-750, Method 2026.

o
Absolute Maximum Ratings (Ta = 25 C)

ITEM Symbol Conditions Rating Unit

Repetitive peak reverse voltage VRRM 60 V

Average forward current IF(AV) 8 A

Peak forward surge current IFSM 8.3ms single half sine-wave 280 A

o
Operating junction and storage temperature Range Tj,TSTG -65 to +150 C

o
Electrical characteristics (Ta = 25 C)
ITEM Symbol Conditions Min. Typ. Max. Unit

IF = 1A - - 0.35
Ta = 25 oC
Forward voltage (NOTE 1) VF IF = 8A - 0.48 0.52 V

IF = 8A Ta = 125 oC - - 0.50

o - 0.08 0.4
Ta = 25 C
Repetitive peak reverse current IRRM VR = Max. VRRM mA
o - - 100
Ta = 125 C
o
Thermal resistance Rth(JA) Junction to ambient (NOTE 2) - 125 - C/W

o
Rth(JC) Junction to case (NOTE 2) - 18 - C/W

NOTES : (1) Pulse test width PW=300usec , 1% duty cycle.


(2) Mounted on P.C.B. with 3.36 x 4.86mm & 1.39 x 1.4mm copper pad areas.

REV. 0 2012/06
ZOWIE WZ3PK860SH (60V / 8A)

FIG.1 - FORWARD CURRENT DERATING CURVE FIG.2 - MAXIMUM NON-REPETITIVE


PEAK FORWARD SURGE CURRENT
10 320
8.3ms SINGLE HALF SINE-WAVE

PEAK FORWARD SURGE CURRENT,


280
AVERAGE FORWARD RECTIFIED

8
240
CURRENT, AMPERES

6 200

AMPERES
160
4
120

80
2
40

0 0
0 25 50 75 100 125 150 175 1 10 100
o
CASE TEMPERATURE, C NUMBER OF CYCLES AT 60Hz

FIG.3 - TYPICAL INSTANTANEOUS FIG.4 - TYPICAL REVERSE CHARACTERISTICS


FORWARD CHARACTERISTICS
50.00 100

TJ = 125℃
TJ = 100℃
TJ = 25℃
10.00 o
TJ = 125 C
INSTANTANEOUS REVERSE LEAKAGE
IINSTANTANEOUS FORWARD CURRENT,

10
CURRENT, MILLIAMPERES

o
TJ = 100 C
AMPERES

1.00
1.0

0.10
0.1

o
TJ = 25 C

0.01 0.01
0 0.1 0.2 0.3 0.4 0.5 0.6 0 20 40 60 80 100

INSTANTANEOUS FORWARD VOLTAGE, PERCENT OF RATED PEAK REVERSE VOLTAGE,%


VOLTS

REV. 0 2012/06

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