TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGH SPEED MOSFET DRIVERS

SLVS132F NOVEMBER 1995 REVISED OCTOBER 2004

D Industry-Standard Driver Replacement D 25-ns Max Rise/Fall Times and 40-ns Max D 2-A Peak Output Current, VCC = 14 V D 5-A Supply Current Input High or Low D 4-V to 14-V Supply-Voltage Range; Internal D
Propagation Delay 1-nF Load, VCC = 14 V

TPS2811, TPS2812, TPS2813 . PACKAGES (TOP VIEW)

. . D, P, AND PW

Regulator Extends Range to 40 V (TPS2811, TPS2812, TPS2813) 40C to 125C Ambient-Temperature Operating Range

REG_IN 1IN GND 2IN

1 2 3 4

8 7 6 5

REG_OUT 1OUT VCC 2OUT

TPS2814

. . . D, P, AND PW PACKAGES
(TOP VIEW) 1 2 3 4 8 7 6 5

description
The TPS28xx series of dual high-speed MOSFET drivers are capable of delivering peak currents of 2 A into highly capacitive loads. This performance is achieved with a design that inherently minimizes shoot-through current and consumes an order of magnitude less supply current than competitive products. The TPS2811, TPS2812, and TPS2813 drivers include a regulator to allow operation with supply inputs between 14 V and 40 V. The regulator output can power other circuitry, provided power dissipation does

1IN1 1IN2 2IN1 2IN2

TPS2815

GND 1OUT VCC 2OUT

. . . D, P, AND PW PACKAGES
(TOP VIEW) 1 2 3 4 8 7 6 5

1IN1 1IN2 2IN1 2IN2

GND 1OUT VCC 2OUT

not exceed package limitations. When the regulator is not required, REG_IN and REG_OUT can be left disconnected or both can be connected to VCC or GND. The TPS2814 and the TPS2815 have 2-input gates that give the user greater flexibility in controlling the MOSFET. The TPS2814 has AND input gates with one inverting input. The TPS2815 has dual-input NAND gates. TPS281x series drivers, available in 8-pin PDIP, SOIC, and TSSOP packages operate over a ambient temperature range of 40C to 125C.
AVAILABLE OPTIONS PACKAGED DEVICES TA INTERNAL REGULATOR LOGIC FUNCTION SMALL OUTLINE (D) TPS2811D TPS2812D TPS2813D TPS2814D TPS2815D PLASTIC DIP (P) TPS2811P TPS2812P TPS2813P TPS2814P TPS2815P TSSOP (PW) TPS2811PW TPS2812PW TPS2813PW TPS2814PW TPS2815PW

40C to 125C

Yes

Dual inverting drivers Dual noninverting drivers One inverting and one noninverting driver Dual 2-input AND drivers, one inverting input on each driver Dual 2-input NAND drivers

No

The D package is available taped and reeled. Add R suffix to device type (e.g., TPS2811DR). The PW package is only available left-end taped and reeled and is indicated by the R suffix on the device type (e.g., TPS2811PWR).

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

Copyright 2002, Texas Instruments Incorporated

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TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGH SPEED MOSFET DRIVERS
SLVS132F NOVEMBER 1995 REVISED OCTOBER 2004

functional block diagram

TPS2811 REG_IN 1IN 1 2 Regulator 8 6 7 REG_OUT VCC 1OUT

regulator diagram (TPS2811, TPS2812, TPS2813 only)

REG_IN

2IN GND

4 3

2OUT

7.5

REG_OUT

TPS2812 REG_IN 1IN 1 2 7 2IN GND 4 3 5 2OUT Regulator 8 6 REG_OUT VCC 1OUT

input stage diagram

TPS2813 REG_IN 1 2 7 4 3 5 2OUT IN To Drive Stage Regulator 8 6 REG_OUT VCC 1OUT VCC

1IN 2IN GND

TPS2814 1IN1 1IN2 2IN1 2IN2 GND 1 2 3 4 8

6 7

VCC 1OUT

2OUT

output stage diagram

Predrive

VCC

TPS2815 1IN1 1IN2 2IN1 2IN2 GND 1 2 3 4 8

6 7

VCC 1OUT OUT 2OUT

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TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGH SPEED MOSFET DRIVERS
SLVS132F NOVEMBER 1995 REVISED OCTOBER 2004

TPS28xxY chip information

This chip, when properly assembled, displays characteristics similar to those of the TPS28xx. Thermal compression or ultrasonic bonding may be used on the doped aluminum bonding pads. The chip may be mounted with conductive epoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS REG_IN (1) (8) 1IN 2IN (7) (1) (2) 1IN2 2IN1 2IN2 (3) (4) (8) (6) 1IN1 (3) 1IN2 2IN1 (5) 2IN2 (3) (4) (8) GND (4) CHIP THICKNESS: 15 MILS TYPICAL BONDING PADS: 4 4 MILS MINIMUM TPS2815Y (1) (2) (6) (5) GND (7) 1OUT VCC 2OUT TPS2814Y (5) (6) (4) (1) (2) TPS2811Y TPS2812Y TPS2813Y (3) GND (2) 1IN1 (7) (8) (7) (6) (5)

REG_OUT 1OUT VCC 2OUT

1OUT VCC 2OUT

57

47

TJmax OPERATING TEMPERATURE = 150C TOLERANCES ARE 10%. ALL DIMENSIONS ARE IN MILS.

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TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGH SPEED MOSFET DRIVERS
SLVS132F NOVEMBER 1995 REVISED OCTOBER 2004

Terminal Functions
TPS2811, TPS2812, TPS2813
TERMINAL NUMBERS TERMINAL NAME REG_IN 1IN GND 2IN 2OUT VCC 1OUT REG_OUT TPS2811 Dual Inverting Drivers 1 2 3 4 5 = 2IN 6 7 = 1IN 8 TPS2812 Dual Noninverting Drivers 1 2 3 4 5 = 2IN 6 7 = 1IN 8 TPS2813 Complimentary Drivers 1 2 3 4 5 = 2IN 6 7 = 1IN 8 Regulator input Input 1 Ground Input 2 Output 2 Supply voltage Output 1 Regulator output DESCRIPTION

TPS2814, TPS2815
TERMINAL NUMBERS TERMINAL NAME 1IN1 1IN2 1IN2 2IN1 2IN2 2IN2 2OUT VCC 1OUT GND TPS2814 Dual AND Drivers with Single Inverting Input 1 2 3 4 5 = 2IN1 2IN2 6 7 = 1IN1 1IN2 8 TPS2815 Dual NAND Drivers 1 2 3 4 5 = 2IN1 2IN2 6 7 = 1IN1 1IN2 8 DISSIPATION RATING TABLE PACKAGE P D PW TA 25C POWER RATING 1090 mW 730 mW 520 mW DERATING FACTOR ABOVE TA = 25C 8.74 mW/C 5.84 mW/C 4.17 mW/C TA = 70C POWER RATING 697 mW 467 mW 332 mW TA = 85C POWER RATING 566 mW 380 mW 270 mW DESCRIPTION

Noninverting input 1 of driver 1 Inverting input 2 of driver 1 Noninverting input 2 of driver 1 Noninverting input 1 of driver 2 Inverting input 2 of driver 2 Noninverting input 2 of driver 2 Output 2 Supply voltage Output 1 Ground

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TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGH SPEED MOSFET DRIVERS
SLVS132F NOVEMBER 1995 REVISED OCTOBER 2004

absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3 V to 15 V Regulator input voltage range, REG_IN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCC 0.3 V to 42 V Input voltage range, 1IN, 2IN, 1IN1, 1IN2, 1IN2, 2IN1, 2IN2, 2IN2 . . . . . . . . . . . . . . . . . 0.3 V to VCC +0.5 V Output voltage range, 1OUT, 2OUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5 < V < VCC +0.5 V Continuous regulator output current, REG_OUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 mA Continuous output current, 1OUT, 2OUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA Continuous total power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table Operating ambient temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40C to 125C Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65C to 150C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260C
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTE 1: All voltages are with respect to device GND pin.

recommended operating conditions

MIN Regulator input voltage range Supply voltage, VCC Input voltage, 1IN1, 1IN2, 1IN2, 2IN1, 2IN2, 2IN2, 1IN, 2IN Continuous regulator output current, REG_OUT Ambient temperature operating range 8 4 0.3 0 40 MAX 40 14 VCC 20 125 UNIT V V V mA C

TPS28xx electrical characteristics over recommended operating ambient temperature range, VCC = 10 V, REG_IN open for TPS2811/12/13, CL = 1 nF (unless otherwise noted)
inputs
PARAMETER TEST CONDITIONS VCC = 5 V VCC = 10 V VCC = 14 V VCC = 5 V Negative-going input threshold voltage Input hysteresis Input current Input capacitance Typicals are for TA = 25C unless otherwise noted. VCC = 10 V VCC = 14 V VCC = 5 V Inputs = 0 V or VCC 1 1 1 1 MIN TYP 3.3 5.8 8.3 1.6 4.2 6.2 1.6 0.2 5 1 10 MAX 4 9 13 UNIT V V V V V V V A pF

Positive-going input threshold voltage

outputs
PARAMETER High-level output voltage Low-level output voltage Peak output current Typicals are for TA = 25C unless otherwise noted. TEST CONDITIONS IO = 1 mA IO = 100 mA IO = 1 mA IO = 100 mA VCC = 10 V MIN 9.75 8 TYP 9.9 9.1 0.18 1 2 0.25 2 V A V MAX UNIT

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TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGH SPEED MOSFET DRIVERS
SLVS132F NOVEMBER 1995 REVISED OCTOBER 2004

regulator (TPS2811/2812/2813 only)

PARAMETER Output voltage Output voltage in dropout Typicals are for TA = 25C unless otherwise noted. TEST CONDITIONS 14 REG_IN 40 V, IO = 10 mA, 0 IO 20 mA REG_IN = 10 V MIN 10 9 TYP 11.5 9.6 MAX 13 UNIT V V

supply current
PARAMETER Supply current into VCC Supply current into REG_IN Typicals are for TA = 25C unless otherwise noted. TEST CONDITIONS Inputs high or low REG_IN = 20 V, REG_OUT open MIN TYP 0.2 40 MAX 5 100 UNIT A A

TPS28xxY electrical characteristics at TA = 25C, VCC = 10 V, REG_IN open for TPS2811/12/13, CL = 1 nF (unless otherwise noted)
inputs
PARAMETER TEST CONDITIONS VCC = 5 V VCC = 10 V VCC = 14 V VCC = 5 V Negative-going input threshold voltage Input hysteresis Input current Input capacitance VCC = 10 V VCC = 14 V VCC = 5 V Inputs = 0 V or VCC MIN TYP 3.3 5.8 8.2 1.6 3.3 4.2 1.2 0.2 5 MAX UNIT V V V V V V V A pF

Positive-going input threshold voltage

outputs
PARAMETER High-level output voltage Low-level output voltage Peak output current TEST CONDITIONS IO = 1 mA IO = 100 mA IO = 1 mA IO = 100 mA VCC = 10.5 V MIN TYP 9.9 9.1 0.18 1 2 V A V MAX UNIT

regulator (TPS2811, 2812, 2813)

PARAMETER Output voltage Output voltage in dropout TEST CONDITIONS 14 REG_IN 40 V, IO = 10 mA, 0 IO 20 mA REG_IN = 10 V MIN TYP 11.5 9.6 MAX UNIT V V

power supply current

PARAMETER Supply current into VCC Supply current into REG_IN TEST CONDITIONS Inputs high or low REG_IN = 20 V, REG_OUT open MIN TYP 0.2 40 MAX UNIT A A

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TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGH SPEED MOSFET DRIVERS
SLVS132F NOVEMBER 1995 REVISED OCTOBER 2004

switching characteristics for all devices over recommended operating ambient temperature range, REG_IN open for TPS2811/12/13, CL = 1 nF (unless otherwise specified)
PARAMETER TEST CONDITIONS VCC = 14 V VCC = 10 V VCC = 5 V VCC = 14 V tf Fall time VCC = 10 V VCC = 5 V VCC = 14 V VCC = 10 V VCC = 5 V VCC = 14 V tPLH Prop delay time low-to-high-level output VCC = 10 V VCC = 5 V MIN TYP 14 15 20 15 15 18 25 25 34 24 26 36 MAX 25 30 35 25 30 35 40 45 50 40 45 50 ns ns ns ns UNIT

tr

Rise time

tPHL

Prop delay time high-to-low-level output

PARAMETER MEASUREMENT INFORMATION

TPS2811 + 1 Regulator 8 0.1 F VCC

4.7 F

Input 50

Output 1 nF

NOTE A: Input rise and fall times should be 10 ns for accurate measurement of ac parameters.

Figure 1. Test Circuit For Measurement of Switching Characteristics

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TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGH SPEED MOSFET DRIVERS
SLVS132F NOVEMBER 1995 REVISED OCTOBER 2004

PARAMETER MEASUREMENT INFORMATION

TPS2811 1 8

Regulator

010 V dc

xOUT Current Loop VCC 0.1 F + 4.7 F

10 V

Figure 2. Shoot-through Current Test Setup

1IN 50% 50% 0V tf 90% 1OUT tPHL 10% 90% 50% 10% tPLH 0V tr

50%

Figure 3. Typical Timing Diagram (TPS2811)

TYPICAL CHARACTERISTICS
Tables of Characteristics Graphs and Application Information typical characteristics
PARAMETER Rise time Fall time Propagation delay time Supply current Input threshold voltage Regulator output voltage Regulator quiescent current Peak source current Peak sink current Shoot-through current vs PARAMETER 2 Supply voltage Supply voltage Supply voltage Supply voltage Load capacitance Ambient temperature Supply voltage Regulator input voltage Regulator input voltage Supply voltage Supply voltage Input voltage, high-to-low Input voltage, low-to-high FIGURE 4 5 6, 7 8 9 10 11 12, 13 14 15 16 17 18 PAGE 10 10 10 11 11 11 11 12 12 12 13 13 13

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TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGH SPEED MOSFET DRIVERS
SLVS132F NOVEMBER 1995 REVISED OCTOBER 2004

TYPICAL CHARACTERISTICS
Tables of Characteristics Graphs and Application Information (Continued) general applications
PARAMETER Switching test circuits and application information Low-to-high Voltage of 1OUT vs 2OUT Time High-to-low vs PARAMETER 2 FIGURE 19, 20 21, 23, 25 22, 24, 26 PAGE 15 16, 17 16, 17

circuit for measuring paralleled switching characteristics

PARAMETER Switching test circuits and application information Low-to-high Input voltage vs output voltage Time High-to-low vs PARAMETER 2 FIGURE 27 28, 30 29, 31 PAGE 17 18 18

Hex-1 to Hex-4 application information

PARAMETER Driving test circuit and application information Hex-1 size Hex-2 size Drain-source voltage vs drain current Time Hex-3 size Hex-4 size Hex-4 size parallel drive Hex-1 size Hex-2 size Drain-source voltage vs gate-source voltage at turn-on Time Hex-3 size Hex-4 size Hex-4 size parallel drive Hex-1 size Hex-2 size Drain-source voltage vs gate-source voltage at turn-off Time Hex-3 size Hex-4 size Hex-4 size parallel drive vs PARAMETER 2 FIGURE 32 33 36 39 41 45 34 37 40 43 46 35 38 42 44 47 PAGE 19 20 20 21 22 23 20 21 21 22 23 20 21 22 22 23

synchronous buck regulator application

PARAMETER 3.3-V 3-A Synchronous-Rectified Buck Regulator Circuit Q1 drain voltage vs gate voltage at turn-on Q1 drain voltage vs gate voltage at turn-off Q1 drain voltage vs Q2 gate-source voltage Output ripple voltage vs inductor current Time 3A 5A vs PARAMETER 2 FIGURE 48 49 50 51, 52, 53 54 55 PAGE 24 26 26 26, 27 27 27

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TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGH SPEED MOSFET DRIVERS
SLVS132F NOVEMBER 1995 REVISED OCTOBER 2004

TYPICAL CHARACTERISTICS
RISE TIME vs SUPPLY VOLTAGE
22 CL = 1 nF 20 20 22 CL = 1 nF

FALL TIME vs SUPPLY VOLTAGE

t r Rise Time ns

t f Fall Time ns

18 TA = 125C 16 TA = 75C TA = 25C 14 TA = 25C TA = 50C

18 TA = 125C 16 TA = 75C TA = 25C 14 TA = 25C TA = 50C

12

12

10 5 6 7 8 9 10 11 12 13 14 VCC Supply Voltage V

10 5 6 7 8 9 10 11 12 13 14 VCC Supply Voltage V

Figure 4
PROPAGATION DELAY TIME, HIGH-TO-LOW-LEVEL OUTPUT vs SUPPLY VOLTAGE
45 CL = 1 nF t PHL Propagation Delay Time, High-To-Low-Level Output ns 40 t PLH Propagation Delay Time, Low-To-High-Level Output ns 40 45 CL = 1 nF

Figure 5
PROPAGATION DELAY TIME, LOW-TO-HIGH-LEVEL OUTPUT vs SUPPLY VOLTAGE

35

35 TA = 25C TA = 75C TA=125C 25 TA = 25C TA = 50C 5 6 7 8 9 10 11 12 VCC Supply Voltage V 13 14

30

TA = 125C

30

25 T = 25C TA = 75C A 20 TA = 50C TA = 25C 5 6 7 11 12 8 9 10 VCC Supply Voltage V 13 14

20

15

15

Figure 6

Figure 7

10

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TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGH SPEED MOSFET DRIVERS
SLVS132F NOVEMBER 1995 REVISED OCTOBER 2004

TYPICAL CHARACTERISTICS
SUPPLY CURRENT vs SUPPLY VOLTAGE
16 14 I CC Supply Current mA 12 1 MHz 10 8 6 4 40 kHz 2 0 0 4 6 8 10 12 14 0 VCC Supply Voltage V 1.5 0.5 1 CL Load Capacitance nF 2 75 kHz 500 kHz 100 kHz Duty Cycle = 50% CL = 1 nF I CC Supply Current mA 2 2.5 VCC = 10 V f = 100 kHz TA = 25C

SUPPLY CURRENT vs LOAD CAPACITANCE

1.5

0.5

Figure 8
SUPPLY CURRENT vs AMBIENT TEMPERATURE
1.2 1.19 1.18 I CC Supply Current mA 1.17 1.16 1.15 1.14 1.13 1.12 1.11 1.1 50 25 75 0 25 50 TA Temperature C 100 125 CL = 1 nF VCC = 10 V Duty Cycle = 50% f = 100 kHz 9 TA = 25C 8 VIT Input Threshold Voltage V 7

Figure 9
INPUT THRESHOLD VOLTAGE vs SUPPLY VOLTAGE

+ Threshold 6 5 4 3 2 1 0 4 6 12 8 10 VCC Supply Voltage V 14 Threshold

Figure 10

Figure 11

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TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGH SPEED MOSFET DRIVERS
SLVS132F NOVEMBER 1995 REVISED OCTOBER 2004

TYPICAL CHARACTERISTICS
REGULATOR OUTPUT VOLTAGE vs REGULATOR INPUT VOLTAGE
14 13 Regulator Output Voltage V 12 11 10 9 8 7 6 5 4 4 8 12 16 20 24 28 32 Regulator Input Voltage V 36 40 TA = 25C TA = 125C RL = 10 k 12 TA = 55C Regulator Output Voltage V 11 10 9 8 7 6 5 4 4 6 8 10 12 14 TA = 125C 13 RL = 10 k TA = 25C TA = 55C

REGULATOR OUTPUT VOLTAGE vs REGULATOR INPUT VOLTAGE

Regulator Input Voltage V

Figure 12
REGULATOR QUIESCENT CURRENT vs REGULATOR INPUT VOLTAGE
50 45 Regulator Quiescent Current A 40 35 30 25 20 15 10 RL = 10 k 5 0 0 4 8 12 16 20 24 28 32 36 40 4 6 TA = 125C Peak Source Current A TA = 25C TA = 55C 2 2.5

Figure 13
PEAK SOURCE CURRENT vs SUPPLY VOLTAGE
RL = 0.5 f = 100 kHz Duty Cycle = 5% TA = 25C

1.5

.5

10

12

14

Regulator Input Voltage V

VCC Supply Voltage V

Figure 14

Figure 15

12

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TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGH SPEED MOSFET DRIVERS
SLVS132F NOVEMBER 1995 REVISED OCTOBER 2004

TYPICAL CHARACTERISTICS
PEAK SINK CURRENT vs SUPPLY VOLTAGE
2.5 RL = 0.5 f = 100 kHz Duty Cycle = 5% TA = 25C

2 Peak Sink Current A

1.5

.5

0 4 6 12 8 10 VCC Supply Voltage V 14

Figure 16
SHOOT-THROUGH CURRENT vs INPUT VOLTAGE, HIGH-TO-LOW
6 VCC = 10 V CL = 0 TA = 25C Shoot-Through Current mA 6 VCC = 10 V CL = 0 TA = 25C

SHOOT-THROUGH CURRENT vs INPUT VOLTAGE, LOW-TO-HIGH

5 Shoot-Through Current mA

0 10 8 6 4 2 0 VI Input Voltage, High-to-Low V

0 0 2 4 6 8 10 VI Input Voltage, Low-to-High V

Figure 17

Figure 18

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TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGH SPEED MOSFET DRIVERS
SLVS132F NOVEMBER 1995 REVISED OCTOBER 2004

APPLICATION INFORMATION
The TPS2811, TPS2812 and TPS2813 circuits each contain one regulator and two MOSFET drivers. The regulator can be used to limit VCC to between 10 V and 13 V for a range of input voltages from 14 V to 40 V, while providing up to 20 mA of dc drive. The TPS2814 and TPS2815 both contain two drivers, each of which has two inputs. The TPS2811 has inverting drivers, the TPS2812 has noninverting drivers, and the TPS2813 has one inverting and one noninverting driver. The TPS2814 is a dual 2-input AND driver with one inverting input on each driver, and the TPS2815 is a dual 2-input NAND driver. These MOSFET drivers are capable of supplying up to 2.1 A or sinking up to 1.9 A (see Figures 15 and 16) of instantaneous current to n-channel or p-channel MOSFETs. The TPS2811 family of MOSFET drivers have very fast switching times combined with very short propagation delays. These features enhance the operation of todays high-frequency circuits. The CMOS input circuit has a positive threshold of approximately 2/3 of VCC, with a negative threshold of 1/3 of VCC, and a very high input impedance in the range of 109 . Noise immunity is also very high because of the Schmidt trigger switching. In addition, the design is such that the normal shoot-through current in CMOS (when the input is biased halfway between VCC and ground) is limited to less than 6 mA. The limited shoot-through is evident in the graphs in Figures 17 and 18. The input stage shown in the functional block diagram better illustrates the way the front end works. The circuitry of the device is such that regardless of the rise and/or fall time of the input signal, the output signal will always have a fast transition speed; this basically isolates the waveforms at the input from the output. Therefore, the specified switching times are not affected by the slopes of the input waveforms. The basic driver portion of the circuits operate over a supply voltage range of 4 V to 14 V with a maximum bias current of 5 A. Each driver consists of a CMOS input and a buffered output with a 2-A instantaneous drive capability. They have propagation delays of less than 30 ns and rise and fall times of less than 20 ns each. Placing a 0.1-F ceramic capacitor between VCC and ground is recommended; this will supply the instantaneous current needed by the fast switching and high current surges of the driver when it is driving a MOSFET. The output circuit is also shown in the functional block diagram. This driver uses a unique combination of a bipolar transistor in parallel with a MOSFET for the ability to swing from VCC to ground while providing 2 A of instantaneous driver current. This unique parallel combination of bipolar and MOSFET output transistors provides the drive required at VCC and ground to guarantee turn-off of even low-threshold MOSFETs. Typical bipolar-only output devices dont easily approach VCC or ground. The regulator, included in the TPS2811, TPS2812 and TPS2813, has an input voltage range of 14 V to 40 V. It produces an output voltage of 10 V to 13 V and is capable of supplying from 0 to 20 mA of output current. In grounded source applications, this extends the overall circuit operation to 40 V by clamping the driver supply voltage (VCC) to a safe level for both the driver and the MOSFET gate. The bias current for full operation is a maximum of 150 A. A 0.1-F capacitor connected between the regulator output and ground is required to ensure stability. For transient response, an additional 4.7-F electrolytic capacitor on the output and a 0.1-F ceramic capacitor on the input will optimize the performance of this circuit. When the regulator is not in use, it can be left open at both the input and the output, or the input can be shorted to the output and tied to either the VCC or the ground pin of the chip.

14

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TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGH SPEED MOSFET DRIVERS
SLVS132F NOVEMBER 1995 REVISED OCTOBER 2004

APPLICATION INFORMATION
matching and paralleling connections Figures 21 and 22 show the delays for the rise and fall time of each channel. As can be seen on a 5-ns scale, there is very little difference between the two channels at no load. Figures 23 and 24 show the difference between the two channels for a 1-nF load on each output. There is a slight delay on the rising edge, but little or no delay on the falling edge. As an example of extreme overload, Figures 25 and 26 show the difference between the two channels, or two drivers in the package, each driving a 10-nF load. As would be expected, the rise and fall times are significantly slowed down. Figures 28 and 29 show the effect of paralleling the two channels and driving a 1-nF load. A noticeable improvement is evident in the rise and fall times of the output waveforms. Finally, Figures 30 and 31 show the two drivers being paralleled to drive the 10-nF load and as could be expected the waveforms are improved. In summary, the paralleling of the two drivers in a package enhances the capability of the drivers to handle a larger load. Because of manufacturing tolerances, it is not recommended to parallel drivers that are not in the same package.
TPS2811 1 Regulator 8 0.1 F + VCC 4.7 F

2 50 3

7 6 1 nF

Output

Figure 19. Test Circuit for Measuring Switching Characteristics

TPS2811 1 Regulator 8 0.1 F + VCC 4.7 F

2 50 3

7 6 CL(1)

Output 1

Output 2

CL(2) NOTE A: Input rise and fall times should be 10 ns for accurate measurement of ac parameters.

Figure 20. Test Circuit for Measuring Switching Characteristics with the Inputs Connected in Parallel

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TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGH SPEED MOSFET DRIVERS
SLVS132F NOVEMBER 1995 REVISED OCTOBER 2004

APPLICATION INFORMATION

VO at 1OUT (5 V/div, 5 ns/div) VO at 2OUT (5 V/div, 5 ns/div)

TA = 25C VI = 14 V CL = 0 Paralleled Input

VO at 1OUT (5 V/div, 5 ns/div) VO at 2OUT (5 V/div, 5 ns/div)

TA = 25C VI = 14 V CL = 0 Paralleled Inputs t Time t Time

Figure 21. Voltage of 1OUT vs Voltage at 2OUT, Low-to-High Output Delay

Figure 22. Voltage at 1OUT vs Voltage at 2OUT, High-to-Low Output Delay

TA = 25C VI = 14 V CL = 1 nF on Each Output Paralleled Input

VO at 1OUT (5 V/div, 10 ns/div)

VO at 2OUT (5 V/div, 10 ns/div) VO at 1OUT (5 V/div, 10 ns/div)

VO at 2OUT (5 V/div, 10 ns/div)

TA = 25C VI = 14 V CL = 1 nF Each Output Paralleled Input t Time t Time

Figure 23. Voltage at 1OUT vs Voltage at 2OUT, Low-to-High Output Delay

Figure 24. Voltage at 1OUT vs Voltage at 2OUT, High-to-Low Output Delay

16

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TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGH SPEED MOSFET DRIVERS
SLVS132F NOVEMBER 1995 REVISED OCTOBER 2004

APPLICATION INFORMATION

VO at 1OUT (5 V/div, 20 ns/div) VO at 2OUT (5 V/div, 20 ns/div)

VO at (5 V/div, 20 ns/div)

VO at 2OUT (5 V/div, 20 ns/div)

TA = 25C VCC = 14 V CL = 10 nF on Each Output Paralleled Input t Time

TA = 25C VCC = 14 V CL = 10 nF on Each Output Paralleled Input t Time

Figure 25. Voltage at 1OUT vs Voltage at 2OUT, Low-to-High Output Delay

TPS2811 1 Regulator 8

Figure 26. Voltage at 1OUT vs Voltage at 2OUT, High-to-Low Output Delay

+ 0.1 F VCC 4.7 F

2 50 3

7 6 CL

Output

NOTE A: Input rise and fall times should be 10 ns for accurate measurement of ac parameters.

Figure 27. Test Circuit for Measuring Paralleled Switching Characteristics

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17

TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGH SPEED MOSFET DRIVERS
SLVS132F NOVEMBER 1995 REVISED OCTOBER 2004

APPLICATION INFORMATION
TA = 25C VCC = 14 V CL = 1 nF Paralleled Input and Output

VI (5 V/div, 20 ns/div) TA = 25C VCC = 14 V CL = 1 nF Paralleled Input and Output

VI (5 V/div, 20 ns/div)

VO (5 V/div, 20 ns/div)

VO (5 V/div, 20 ns/div)

t Time

t Time

Figure 28. Input Voltage vs Output Voltage, Low-to-High Propagation Delay of Paralleled Drivers
TA = 25C VCC = 14 V CL = 10 nF Paralleled Input and Output VI (5 V/div, 20 ns/div)

Figure 29. Input Voltage vs Output Voltage, High-to-Low Propagation Delay of Paralleled Drivers

VI (5 V/div, 20 ns/div)

VO (5 V/div, 20 ns/div)

TA = 25C VCC = 14 V CL = 10 nF Paralleled Input and Output VO (5 V/div, 20 ns/div)

t Time

t Time

Figure 30. Input Voltage vs Output Voltage, Low-to-High Propagation Delay of Paralleled Drivers

Figure 31. Input Voltage vs Output Voltage, High-to-Low Propagation Delay of Paralleled Drivers

18

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TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGH SPEED MOSFET DRIVERS
SLVS132F NOVEMBER 1995 REVISED OCTOBER 2004

APPLICATION INFORMATION
Figures 33 through 47 illustrate the performance of the TPS2811 driving MOSFETs with clamped inductive loads, similar to what is encountered in discontinuous-mode flyback converters. The MOSFETs that were tested range in size from Hex-1 to Hex-4, although the TPS28xx family is only recommended for Hex-3 or below. The test circuit is shown in Figure 32. The layout rules observed in building the test circuit also apply to real applications. Decoupling capacitor C1 is a 0.1-F ceramic device, connected between VCC and GND of the TPS2811, with short lead lengths. The connection between the driver output and the MOSFET gate, and between GND and the MOSFET source, are as short as possible to minimize inductance. Ideally, GND of the driver is connected directly to the MOSFET source. The tests were conducted with the pulse generator frequency set very low to eliminate the need for heat sinking, and the duty cycle was set to turn off the MOSFET when the drain current reached 50% of its rated value. The input voltage was adjusted to clamp the drain voltage at 80% of its rating. As shown, the driver is capable of driving each of the Hex-1 through Hex-3 MOSFETs to switch in 20 ns or less. Even the Hex-4 is turned on in less than 20 ns. Figures 45, 46 and 47 show that paralleling the two drivers in a package enhances the gate waveforms and improves the switching speed of the MOSFET. Generally, one driver is capable of driving up to a Hex-4 size. The TPS2811 family is even capable of driving large MOSFETs that have a low gate charge.

L1

CR1

VI

Current Loop 1 Regulator 8 Q1 2 3 R1 50 7 6 VGS + VDS VDS

5 VCC + C1 0.1 F C2 4.7 F

Figure 32. TPS2811 Driving Hex-1 through Hex-4 Devices

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19

TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGH SPEED MOSFET DRIVERS
SLVS132F NOVEMBER 1995 REVISED OCTOBER 2004

APPLICATION INFORMATION
TA = 25C VCC = 14 V VI = 48 V TA = 25C VCC = 14 V VI = 48 V

VDS (20 V/div, 0.5 s/div)

VDS (20 V/div, 50 ns/div)

VGS (5 V/div, 50 ns/div)

ID (0.5 A/div, 0.5 s/div) t Time t Time

Figure 33. Drain-Source Voltage vs Drain Current, TPS2811 Driving an IRFD014 (Hex-1 Size)

Figure 34. Drain-Source Voltage vs Gate-Source Voltage, at Turn-on, TPS2811 Driving an IRFD014 (Hex-1 Size)

TA = 25C VCC = 14 V VI = 48 V

VDS (20 V/div, 50 ns/div)

VDS (50 V/div, 0.2 s/div)

TA = 25C VCC = 14 V VI = 80 V VGS (5 V/div, 50 ns/div) VGS (0.5 A/div, 0.2 s/div) t Time t Time

Figure 35. Drain-Source Voltage vs Gate-Source Voltage, at Turn-off, TPS2811 Driving an IRFD014 (Hex-1 Size)

Figure 36. Drain-Source Voltage vs Drain Current, TPS2811 Driving an IRFD120 (Hex-2 Size)

20

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TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGH SPEED MOSFET DRIVERS
SLVS132F NOVEMBER 1995 REVISED OCTOBER 2004

APPLICATION INFORMATION
TA = 25C VCC = 14 V VI = 80 V TA = 25C VCC = 14 V VI = 80 V

VDS (50 V/div, 50 ns/div)

VDS (50 V/div, 50 ns/div)

VGS (5 V/div, 50 ns/div)

VGS (5 V/div, 50 ns/div)

t Time

t Time

Figure 37. Drain-Source Voltage vs Gate-Source Voltage, at Turn-on, TPS2811 Driving an IRFD120 (Hex-2 Size)

Figure 38. Drain-Source Voltage vs Gate-Source Voltage, at Turn-off, TPS2811 Driving an IRFD120 (Hex-2 Size)

TA = 25C VCC = 14 V VI = 80 V

VDS (50 V/div, 50 ns/div) VDS (50 V/div, 2 s/div) TA = 25C VCC = 14 V VI = 80 V VGS (5 A/div, 50 ns/div)

ID (5 A/div, 2 s/div)

t Time

t Time

Figure 39. Drain-Source Voltage vs Drain Current, TPS2811 Driving an IRF530 (Hex-3 Size)

Figure 40. Drain-Source Voltage vs Gate-Source Voltage, at Turn-on, TPS2811 Driving an IRF530 (Hex-3 Size)

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TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGH SPEED MOSFET DRIVERS
SLVS132F NOVEMBER 1995 REVISED OCTOBER 2004

APPLICATION INFORMATION
VDS (50 V/div, 0.2 s/div) TA = 25C VCC = 14 V VI = 350 V VDS (50 V/div, 50 ns/div)

TA = 25C VCC = 14 V VI = 80 V

ID (2 A/div, 0.2 s/div)

VGS (5 V/div, 50 ns/div)

t Time

t Time

Figure 41. Drain-Source Voltage vs Drain Current, One Driver, TPS2811 Driving an IRF840 (Hex-4 Size)
VDS (50 V/div, 50 ns/div)

Figure 42. Drain-Source Voltage vs Gate-Source Voltage, at Turn-off, TPS2811 Driving an IRF530 (Hex-3 Size)

VDS (50 V/div, 50 ns/div) VGS (5 V/div, 50 ns/div)

VGS (5 V/div, 50 ns/div)

TA = 25C VCC = 14 V VI = 350 V t Time t Time

TA = 25C VCC = 14 V VI = 350 V

Figure 43. Drain-Source Voltage vs Gate-Source Voltage, at Turn-on, One Driver, TPS2811 Driving an IRF840 (Hex-4 Size)

Figure 44. Drain-Source Voltage vs Gate-Source Voltage, at Turn-off, One Driver, TPS2811 Driving an IRF840 (Hex-4 Size)

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TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGH SPEED MOSFET DRIVERS
SLVS132F NOVEMBER 1995 REVISED OCTOBER 2004

APPLICATION INFORMATION
VDS (50 V/div, 0.2 s/div) VDS (50 V/div, 50 ns/div) TA = 25C VCC = 14 V VI = 350 V

ID (2 A/div, 0.2 s/div)

VGS (5 V/div, 50 ns/div)

TA = 25C VCC = 14 V VI = 350 V

t Time

t Time

Figure 45. Drain-Source Voltage vs Drain Current, Parallel Drivers, TPS2811 Driving an IRF840 (Hex-4 Size)

Figure 46. Drain-Source Voltage vs Gate-Source Voltage, at Turn-on, Parallel Drivers, TPS2811 Driving an IRF840 (Hex-4 Size)

VDS (50 V/div, 50 ns/div)

VGS (5 V/div, 50 ns/div)

TA = 25C VCC = 14 V VI = 350 V t Time

Figure 47. Drain-Source Voltage vs Gate-Source Voltage, at Turn-off, Parallel Drivers, TPS2811 Driving an IRF840 (Hex-4 Size)

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TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGH SPEED MOSFET DRIVERS
SLVS132F NOVEMBER 1995 REVISED OCTOBER 2004

APPLICATION INFORMATION synchronous buck regulator

Figure 48 is the schematic for a 100-kHz synchronous-rectified buck converter implemented with a TL5001 pulse-width-modulation (PWM) controller and a TPS2812 driver. The bill of materials is provided in Table 1. The converter operates over an input range from 5.5 V to 12 V and has a 3.3-V output capable of supplying 3 A continuously and 5 A during load surges. The converter achieves an efficiency of 90.6% at 3 A and 87.6% at 5 A. Figures 49 and 50 show the power switch switching performance. The output ripple voltage waveforms are documented in Figures 54 and 55. The TPS2812 drives both the power switch, Q2, and the synchronous rectifier, Q1. Large shoot-through currents, caused by power switch and synchronous rectifier remaining on simultaneously during the transitions, are prevented by small delays built into the drive signals, using CR2, CR3, R11, R12, and the input capacitance of the TPS2812. These delays allow the power switch to turn off before the synchronous rectifier turns on and vice versa. Figure 51 shows the delay between the drain of Q2 and the gate of Q1; expanded views are provided in Figures 52 and 53.
Q1 IRF7406 L1 27 F 3 J1 VI VI GND GND 1 2 3 4 2 1 2 3 4 REG_IN 1 IN GND 2 IN REG_OUT U2 TPS2812D 1 OUT VCC 2 OUT C14 0.1 F 8 7 6 5 R13 10 k R6 15 3 Q2 IRF7201 C6 1000 pF C3 0.0022 F R4 2.32 k 1% R2 1.6 k C2 0.033 F 1 OUT C15 1 F GND 8 RT 7 R9 90.9 k 1% 2 VCC 3 COMP U1 TL5001CD DTC 6 R8 121 k 1% C9 0.22 F SCP 5 + C1 1 F 4 FB R1 1.00 k 1% R3 180 C4 0.022 F C100 100 F 16 V + C5 100 F 16 V + C11 0.47 F R5 10 k + 2 1 CR1 30BQ015 R7 3.3 C12 100 F 16 V + C7 100 F 16 V C13 10 F 10 V 1 J2 1 2 3 4 3.3 V 3.3 V GND GND

CR2 BAS16ZX

R10 1 k

CR3

R11 30 k BAS16ZX

R12 10 k

Figure 48. 3.3-V 3-A Synchronous-Rectified Buck Regulator Circuit

NOTE: If the parasitics of the external circuit cause the voltage to violate the Absolute Maximum Rating for the Output pins, Schottky diodes should be added from ground to output and from output to Vcc.

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TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGH SPEED MOSFET DRIVERS
SLVS132F NOVEMBER 1995 REVISED OCTOBER 2004

APPLICATION INFORMATION
Table 1. Bill of Materials, 3.3-V, 3-A Synchronous-Rectified Buck Converter
REFERENCE U1 U2 CR1 CR2,CR3 C1 C2 C3 C4 C5,C7,C10,C12 C6 C9 C11 C13 C14 C15 J1,J2 L1 Q1 Q2 R1 R2 R3 R4 R5,R12,R13 R6 R7 R8 R9 R10 R11 DESCRIPTION TL5001CD, PWM TPS2812D, N.I. MOSFET Driver 3 A, 15 V, Schottky, 30BQ015 Signal Diode, BAS16ZX 1 F, 16 V, Tantalum 0.033 F, 50 V 0.0022 F, 50 V 0.022 F, 50 V 100 F, 16 V, Tantalum, TPSE107M016R0100 1000 pF, 50 V 0.22 F, 50 V 0.47 F, 50 V, Z5U 10 F, 10 V, Ceramic, CC1210CY5V106Z 0.1 F, 50 V 1.0 F, 50 V 4-Pin Header 27 H, 3 A/5 A, SML5040 IRF7406, P-FET IRF7201, N-FET 1.00 k, 1% 1.6 k 180 2.32 k, 1 % 10 k 15 3.3 121 k, 1% 90.9 k, 1% 1 k 30 k Nova Magnetics, Inc., International Rectifier, International Rectifier, 972-272-8287 310-322-3331 310-322-3331 TDK, 708-803-6100 AVX, 800-448-9411 VENDOR Texas Instruments, Texas Instruments, International Rectifier, Zetex, 972-644-5580 972-644-5580 310-322-3331 516-543-7100

NOTES: 2. Unless otherwise specified, capacitors are X7R ceramics. 3. Unless otherwise specified, resistors are 5%, 1/10 W.

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TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGH SPEED MOSFET DRIVERS
SLVS132F NOVEMBER 1995 REVISED OCTOBER 2004

APPLICATION INFORMATION

VD (5 V/div, 20 ns/div)

VG (2 V/div, 20 ns/div)

VD (5 V/div, 20 ns/div)

TA = 25C VI = 12 V VO = 3.3 V at 5A

VG (2 V/div, 20 ns/div)

TA = 25C VI = 12 V VO = 3.3 V at 5A t Time

t Time

Figure 49. Q1 Drain Voltage vs Gate Voltage, at Switch Turn-on

Figure 50. Q1 Drain Voltage vs Gate Voltage, at Switch Turn-off

TA = 25C VI = 12 V VO = 3.3 V at 5A

VD (5 V/div, 0.5 s/div)

TA = 25C VI = 12 V VO = 3.3 V at 5A

VD (5 V/div, 20 ns/div)

VGS (2 V/div, 0.5 s/div)

VGS (2 V/div, 20 ns/div)

t Time

t Time

Figure 51. Q1 Drain Voltage vs Q2 Gate-Source Voltage

Figure 52. Q1 Drain Voltage vs Q2 Gate-Source Voltage

26

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TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGH SPEED MOSFET DRIVERS
SLVS132F NOVEMBER 1995 REVISED OCTOBER 2004

APPLICATION INFORMATION
TA = 25C VI = 12 V VO = 3.3 V at 5A VD (5 V/div, 20 ns/div)

VGS (2 V/div, 20 ns/div)

t Time

Figure 53. Q1 Drain Voltage vs Q2 Gate-Source Voltage

TA = 25C VI = 12 V VO = 3.3 V at 3A Inductor Current (1 A/div, 2 s/div)

Inductor Current (2 A/div, 2 s/div)

TA = 25C VI = 12 V VO = 3.3 V at 5 A 1 1

Output Ripple Voltage (20 mV/div, 2 s/div)

2 2 Output Ripple Voltage (20 mV/div, 2 s/div)

t Time

t Time

Figure 54. Output Ripple Voltage vs Inductor Current, at 3 A

Figure 55. Output Ripple Voltage vs Inductor Current, at 5 A

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27

PACKAGE OPTION ADDENDUM

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28-Aug-2010

PACKAGING INFORMATION
Orderable Device TPS2811D TPS2811DG4 TPS2811DR TPS2811DRG4 TPS2811P TPS2811PE4 TPS2811PW TPS2811PWG4 TPS2811PWLE TPS2811PWR TPS2811PWRG4 TPS2812D TPS2812DG4 TPS2812DR TPS2812DRG4 TPS2812P TPS2812PE4 TPS2812PWLE TPS2812PWR Status
(1)

Package Type Package Drawing SOIC SOIC SOIC SOIC PDIP PDIP TSSOP TSSOP TSSOP TSSOP TSSOP SOIC SOIC SOIC SOIC PDIP PDIP TSSOP TSSOP D D D D P P PW PW PW PW PW D D D D P P PW PW

Pins 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8

Package Qty 75 75 2500 2500 50 50 150 150

Eco Plan

(2)

Lead/ Ball Finish

MSL Peak Temp

(3)

Samples (Requires Login) Request Free Samples Request Free Samples Purchase Samples Purchase Samples Request Free Samples Request Free Samples Request Free Samples Request Free Samples Samples Not Available Purchase Samples Purchase Samples Request Free Samples Request Free Samples Purchase Samples Purchase Samples Request Free Samples Request Free Samples Samples Not Available Request Free Samples

ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE OBSOLETE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE OBSOLETE ACTIVE

Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Pb-Free (RoHS) Pb-Free (RoHS) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) TBD Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Pb-Free (RoHS) Pb-Free (RoHS) TBD Green (RoHS & no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM CU NIPDAU Level-1-260C-UNLIM CU NIPDAU Level-1-260C-UNLIM CU NIPDAU Level-1-260C-UNLIM CU NIPDAU N / A for Pkg Type CU NIPDAU N / A for Pkg Type CU NIPDAU Level-1-260C-UNLIM CU NIPDAU Level-1-260C-UNLIM Call TI Call TI

2000 2000 75 75 2500 2500 50 50 2000

CU NIPDAU Level-1-260C-UNLIM CU NIPDAU Level-1-260C-UNLIM CU NIPDAU Level-1-260C-UNLIM CU NIPDAU Level-1-260C-UNLIM CU NIPDAU Level-1-260C-UNLIM CU NIPDAU Level-1-260C-UNLIM CU NIPDAU N / A for Pkg Type CU NIPDAU N / A for Pkg Type Call TI Call TI CU NIPDAU Level-1-260C-UNLIM

Addendum-Page 1

PACKAGE OPTION ADDENDUM

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Orderable Device TPS2812PWRG4 TPS2813D TPS2813DG4 TPS2813DR TPS2813DRG4 TPS2813P TPS2813PE4 TPS2813PWLE TPS2813PWR TPS2813PWRG4 TPS2814D TPS2814DG4 TPS2814DR TPS2814DRG4 TPS2814P TPS2814PE4 TPS2814PW TPS2814PWG4 TPS2814PWLE TPS2814PWR

Status

(1)

Package Type Package Drawing TSSOP SOIC SOIC SOIC SOIC PDIP PDIP TSSOP TSSOP TSSOP SOIC SOIC SOIC SOIC PDIP PDIP TSSOP TSSOP TSSOP TSSOP PW D D D D P P PW PW PW D D D D P P PW PW PW PW

Pins 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8

Package Qty 2000 75 75 2500 2500 50 50 2000 2000 75 75 2500 2500 50 50 150 150

Eco Plan

(2)

Lead/ Ball Finish

MSL Peak Temp

(3)

Samples (Requires Login) Request Free Samples Request Free Samples Request Free Samples Purchase Samples Purchase Samples Request Free Samples Request Free Samples Samples Not Available Request Free Samples Request Free Samples Request Free Samples Request Free Samples Purchase Samples Purchase Samples Request Free Samples Request Free Samples Purchase Samples Purchase Samples Samples Not Available Request Free Samples

ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE OBSOLETE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE OBSOLETE ACTIVE

Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Pb-Free (RoHS) Pb-Free (RoHS) TBD Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Pb-Free (RoHS) Pb-Free (RoHS) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) TBD Green (RoHS & no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM CU NIPDAU Level-1-260C-UNLIM CU NIPDAU Level-1-260C-UNLIM CU NIPDAU Level-1-260C-UNLIM CU NIPDAU Level-1-260C-UNLIM CU NIPDAU N / A for Pkg Type CU NIPDAU N / A for Pkg Type Call TI Call TI CU NIPDAU Level-1-260C-UNLIM CU NIPDAU Level-1-260C-UNLIM CU NIPDAU Level-1-260C-UNLIM CU NIPDAU Level-1-260C-UNLIM CU NIPDAU Level-1-260C-UNLIM CU NIPDAU Level-1-260C-UNLIM CU NIPDAU N / A for Pkg Type CU NIPDAU N / A for Pkg Type CU NIPDAU Level-1-260C-UNLIM CU NIPDAU Level-1-260C-UNLIM Call TI Call TI

2000

CU NIPDAU Level-1-260C-UNLIM

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PACKAGE OPTION ADDENDUM

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Orderable Device TPS2814PWRG4 TPS2815D TPS2815DG4 TPS2815DR TPS2815DRG4 TPS2815P TPS2815PE4 TPS2815PWLE TPS2815PWR TPS2815PWRG4

Status

(1)

Package Type Package Drawing TSSOP SOIC SOIC SOIC SOIC PDIP PDIP TSSOP TSSOP TSSOP PW D D D D P P PW PW PW

Pins 8 8 8 8 8 8 8 8 8 8

Package Qty 2000 75 75 2500 2500 50 50 2000 2000

Eco Plan

(2)

Lead/ Ball Finish

MSL Peak Temp

(3)

Samples (Requires Login) Request Free Samples Request Free Samples Request Free Samples Purchase Samples Purchase Samples Request Free Samples Request Free Samples Samples Not Available Purchase Samples Purchase Samples

ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE OBSOLETE ACTIVE ACTIVE

Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Pb-Free (RoHS) Pb-Free (RoHS) TBD Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM CU NIPDAU Level-1-260C-UNLIM CU NIPDAU Level-1-260C-UNLIM CU NIPDAU Level-1-260C-UNLIM CU NIPDAU Level-1-260C-UNLIM CU NIPDAU N / A for Pkg Type CU NIPDAU N / A for Pkg Type Call TI Call TI CU NIPDAU Level-1-260C-UNLIM CU NIPDAU Level-1-260C-UNLIM

(1)

The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device.
(2)

Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)

MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

Addendum-Page 3

PACKAGE OPTION ADDENDUM

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Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

Addendum-Page 4

PACKAGE MATERIALS INFORMATION

www.ti.com 6-Oct-2010

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device

Package Package Pins Type Drawing SOIC SOIC TSSOP SOIC SOIC TSSOP SOIC SOIC TSSOP SOIC SOIC TSSOP SOIC TSSOP D D PW D D PW D D PW D D PW D PW 8 8 8 8 8 8 8 8 8 8 8 8 8 8

SPQ

Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) 330.0 330.0 330.0 330.0 330.0 330.0 330.0 330.0 330.0 330.0 330.0 330.0 330.0 330.0 12.4 12.4 12.4 12.4 12.4 12.4 12.4 12.4 12.4 12.4 12.4 12.4 12.4 12.4 6.4 6.4 7.0 6.4 6.4 7.0 6.4 6.4 7.0 6.4 6.4 7.0 6.4 7.0

B0 (mm) 5.2 5.2 3.6 5.2 5.2 3.6 5.2 5.2 3.6 5.2 5.2 3.6 5.2 3.6

K0 (mm) 2.1 2.1 1.6 2.1 2.1 1.6 2.1 2.1 1.6 2.1 2.1 1.6 2.1 1.6

P1 (mm) 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0

W Pin1 (mm) Quadrant 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 Q1 Q1 Q1 Q1 Q1 Q1 Q1 Q1 Q1 Q1 Q1 Q1 Q1 Q1

TPS2811DR TPS2811DR TPS2811PWR TPS2812DR TPS2812DR TPS2812PWR TPS2813DR TPS2813DR TPS2813PWR TPS2814DR TPS2814DR TPS2814PWR TPS2815DR TPS2815PWR

2500 2500 2000 2500 2500 2000 2500 2500 2000 2500 2500 2000 2500 2000

Pack Materials-Page 1

PACKAGE MATERIALS INFORMATION

www.ti.com 6-Oct-2010

*All dimensions are nominal

Device TPS2811DR TPS2811DR TPS2811PWR TPS2812DR TPS2812DR TPS2812PWR TPS2813DR TPS2813DR TPS2813PWR TPS2814DR TPS2814DR TPS2814PWR TPS2815DR TPS2815PWR

Package Type SOIC SOIC TSSOP SOIC SOIC TSSOP SOIC SOIC TSSOP SOIC SOIC TSSOP SOIC TSSOP

Package Drawing D D PW D D PW D D PW D D PW D PW

Pins 8 8 8 8 8 8 8 8 8 8 8 8 8 8

SPQ 2500 2500 2000 2500 2500 2000 2500 2500 2000 2500 2500 2000 2500 2000

Length (mm) 346.0 340.5 346.0 340.5 346.0 346.0 346.0 340.5 346.0 340.5 346.0 346.0 340.5 346.0

Width (mm) 346.0 338.1 346.0 338.1 346.0 346.0 346.0 338.1 346.0 338.1 346.0 346.0 338.1 346.0

Height (mm) 29.0 20.6 29.0 20.6 29.0 29.0 29.0 20.6 29.0 20.6 29.0 29.0 20.6 29.0

Pack Materials-Page 2

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