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P-N Junction Diode

This document describes an experiment to study the voltage-current (V-I) characteristics of a p-n junction diode. The experiment involves setting up a circuit with a diode, power supply, ammeter and voltmeter. Readings of current and voltage are taken in both forward and reverse bias conditions and plotted on a graph. In forward bias, current flows easily through the diode above the knee voltage of around 0.7V for silicon. In reverse bias, very little leakage current flows and the depletion region widens preventing conduction.

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Sanskar
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97 views4 pages

P-N Junction Diode

This document describes an experiment to study the voltage-current (V-I) characteristics of a p-n junction diode. The experiment involves setting up a circuit with a diode, power supply, ammeter and voltmeter. Readings of current and voltage are taken in both forward and reverse bias conditions and plotted on a graph. In forward bias, current flows easily through the diode above the knee voltage of around 0.7V for silicon. In reverse bias, very little leakage current flows and the depletion region widens preventing conduction.

Uploaded by

Sanskar
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Aim : Study of V-I characteristics of a p-n junction diode.

Apparatus Required: Diode characteristics Kit, Power Supply, Ammeter (0-


20mA), Voltmeter (0-20V), Connecting Leads.
Brief Theory: A P-N junction is known as semiconductor diode or crystal diode.
It is the combination of P-type and N-type Semiconductor. This offers nearly zero
resistance to current on forward biasing & nearly infinite resistance to the flow
of current when circuit is connected in reverse biased mode.
Forward biasing: When P-type semiconductor is connected to the +ve terminal
and N-type to –ve terminal of voltage source. Nearly zero resistance is offered to
the flow of current.
In Forward Bias, if this external voltage becomes greater than the value of the
potential barrier, approx. 0.7 volts for silicon and 0.3 volts for germanium, the
opposition offered to the carriers by the potential barriers will be overcome and
current will start to flow. As negative voltage pushes electrons to cross over the
junction and combine with the holes being pushed in the opposite direction by the
positive voltage which reduces depletion layer.
A characteristics curve of zero current flowing up to a particular voltage point is
called the “knee” voltage. After “knee” voltage, with little increase in the external
voltage, a high current flow through the diode. The point at which a sudden
increase in current takes place is represented on the static I-V characteristics curve
is known as the “knee” point.
Since the diode can conduct “infinite” current above this knee point as it
effectively becomes a short circuit, therefore resistors are used in series with the
diode to limit its current flow. Exceeding its maximum forward current
specification causes the device to dissipate more power in the form of heat than
it was designed for resulting in a very quick failure of the device.
CIRCUIT DIGRAM:
Reverse biasing: When P-type semiconductor is connected to the –ve terminal
and N-type to +ve terminal of voltage source. Nearly zero current flow in this
condition.
The positive voltage applied to the N-type material attracts electrons towards the
positive electrode and away from the junction, while the holes in the P-type end
are also attracted away from the junction towards the negative electrode.
The net result is that the depletion layer grows wider due to a lack of electrons
and holes thus preventing current from flowing through the semiconductor
material.
A very small reverse leakage current does flow through the junction which
can normally be measured in micro-amperes, (μA). If the reverse bias
voltage Vr applied to the diode is increased to a sufficiently high enough value,
it will cause the diode’s PN junction to overheat and fail due to the avalanche
effect around the junction. This may cause the diode to become shorted and will
result in the flow of maximum circuit current

Procedure:
(1) Connect the circuit as shown in fig
(2) Switch on the power supply.
(3) Vary the value of input dc supply in steps.
(4) Note down the ammeter & voltmeter readings for each step.
(5) Plot the graph of Voltage Vs Current.
(6) Connect the circuit as shown in fig.
Observation Table
S. No When Diode Is Forward Biased When Diode Is Reverse Biased
Current(m A) Voltage(V) Current [µA) Voltage(V)
1
2
3
4
5
6
7
Graph:

RESULT: The graph has been plotted between voltage and current.
DISCUSSION: The diode doesn’t conduct in RB state and conduct in FB state.
PRECAUTIONS:
1 Always connect the voltmeter in parallel & ammeter in series as shown in
fig.
2 Connection should be proper & tight.
3 Switch ‘ON’ the supply after completing the circuit
4 DC supply should be increased slowly in steps
5 Reading of voltmeter & Ammeter should be accurate.

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