L.J Institute of Engineering and Technology, Ahmedabad.

Physics Question Bank (SEM-I-2022 CE,IT,CSD,AIML,AIDS,CS&IT,CSE,CST,CEA,EC Engineering )

Note :
This question bank is only for reference purpose. LJU Test question paper may not be completely set from this question bank.
Sr Unit MCQ
No Number Question_Text Marks Option A Option B Option C Option D
Answer
1 1 Dielectrics are basically ________ C 1 Conductors Semiconductor Insulators Supeconducto
s rs
2 1 Identify a good dielectric. B 1 Iron Ceramic Plastic Magnesium
3 1 What is the process of producing electric dipoles inside the A 1 Polarisation Dipole Susceptibility Magnetisation
dielectric by an external electric field? moment
4 1 Polar molecules have permanent dipole moments even in the A 1 Electric Magnetic Electromagnet None of these
absence of _______field ic
5 1 Dielectric materials do not have________. A 1 Free electrons Bound charge Protons Neutrons

6 1 Dielectric characteristics are decided by _______ C 1 Dielectric Relative Both None of these
cinstant oermittivity
7 1 Which of the following is not an example of Polar dielectric? B 1 Water Carbon dioxide Carbon Hydrochloric
monoxide acid
8 1 The value of dielectric constant for dielectric materials is always B 1 <1 >1 1 0
______
9 1 The stressed region around a charged body is called__________ A 1 Electric Magnetic Electromagnet None of these
ic
10 1 The unit of electric field is __________ B 1 NC N/C Vm Vm2
11 1 The polarization P in a solid dielectric is related to the electric field C 1 E=e0 D+P D= E+ e0P D= e0 E+P D= e0 (E+P)
E and the electric flux density D by the relation _________.

12 1 Polarization is defined as _______ C 1 Flux passing Stressed Induced dipole ratio of

per unit area region around moment per permittivity of
a charged unit volume of medium to
body dielectric permittivity of
free space
13 1 What is the effect of Electric field on a dielctric? Define a dipole. 3

14 1 What do you mean by polar and non-polar dielectrics? Give 3

examples.
15 1 Define the following: i) dielectric constant ii) electric flux density 4
iii) polarization vector iv) electric susceptibility.
16 1 Explain polarisation vector of a dielectric. 3
17 1 Establish the relation between susceptibilty and dielectric 5
constant.
18 1 The unit of Polarizability is B 1 farad / metre2 farad . metre2 farad / metre farad . metre

19 1 The unit of dipole moment is ____ A 1 coulomb.metr coulomb/met coulomb.metr metre /

e re e2 coulomb
20 1 The value of relative permittivity for air is A 1 1 1.6 1.66 1.8
21 1 How does ionic polarisation occur? C 1 Splitting of Passing Displacement Never occurs
ions magnetic field of cations and
anions
22 1 Which of the following polarisations is very rapid? A 1 Electronic Ionic Space charge Orientation
polarisation polarisation polarisation polarisation
23 1 Which of the following is the slowest polarisation method? D 1 Electronic Ionic Orientation Space charge
polarisation polarisation polarisation polarisation
24 1 Polarization that occurs in multiphase dielectrics is _________ C 1 Electronic Ionic Space charge Orientation
polarisation polarisation polarisation polarisation
25 1 Dipolar polarization is also called________ D 1 Electronic Ionic Space charge Orientation
polarisation polarisation polarisation polarisation
26 1 Explain the different mechanisms of Polarization mechanisms in 7
dielectrics.
27 1 What do you mean by Electronic and ionic polarizability? Explain 4

28 1 At higher frequencies, which type of polarisation occurs? B 1 Ionic Electronic Orientation All of these
polarisation polarisation polarisation
29 1 Calculate the electronic polarizability of an isolated Se atom.The 3
atomic radius of Se atom is 0.12nm.(Given: ε0=8.85×10-12 )

30 1 Calculate the electronic polarizability of argonatom.Given 3

εr=1.0024 and N=2.7x 1025 atoms/m3
31 1 Calculate the polarizability and relative permittivity in hydrogen 3
gas with a density of 9.8×1026atoms/m3.Given the radius of
hydrogen atom to be 0.5 Ǻ

Page 1 of 25
 L.J Institute of Engineering and Technology, Ahmedabad.
Physics Question Bank (SEM-I-2022 CE,IT,CSD,AIML,AIDS,CS&IT,CSE,CST,CEA,EC Engineering )
Note :
This question bank is only for reference purpose. LJU Test question paper may not be completely set from this question bank.
Sr Unit MCQ
No Number Question_Text Marks Option A Option B Option C Option D
Answer
32 1 The electronic polarisability of an argon atom is 1.75 x 10-40 Fm2. 3
What is the static dielectric constant if its density is 1.8x103
kg/m3? Given atomic weight of Ar = 39.95 and NA = 6.025 x1026/
kmole
33 1 The internal or Lorentz field equals to______________ D 1 Ei = E + E c E = (P/ 3ε0) E = E + (P2/ Ei = E + ( P/
3ε0) 3ε0)
34 1 What is meant by internal field? 3
35 1 Derive the Clausius Mossotti equation 5
36 1 For a cubic structure, total polarisability αT is equal to _______ D 1 αT= αO+ αE +αI αT= αO+ αE αT= αE +αI αT= α E

37 1 The Clausius Mossotti equation is given by A 1 [(3ε0)( εr -1)]= [(Nαe)(εr+2)] [(3ε0)( εr -1)]= [(3ε0)( εr+1)]=
[(Nαe)(εr+2)] =[(3ε0)( εr+1)] [(Nαe)(εr -2)] [(Nαe)(εr-2)]

38 1 Calculate the ratio between electronic and ionic polarisability of a 4

material having εr = 4.94 and n2 = 2.69
39 1 The electronic polarisability of an argon atom is 1.75 x 10-40 Fm2. 3
What is the static dielectric constant using Clausius Mossotti
equation if its density is 1.8x103 kg/m3? Given atomic weight of Ar
= 39.95
40 1 _________ is a naturally available dielectric material A 1 Air Nitrogen Sulphurhexaflu Inert gas
oride
41 1 ________ belongs to the category of mineral insulating oils. D 1 Sovol Vegetable oil Silicon oil Transformer
oil
42 1 ________ belongs to the category of synthetic oils. A 1 Sovol Vegetable oil Silicon oil Transformer
oil
43 1 ________ belongs to the category of miscellaneous oils. B 1 Sovol Vegetable oil Capacitor oil Transformer
oil
44 1 _______ dielectric material is used for high temperature D 1 Cotton Paper Silk Mica
applications.
45 1 Which is having higher breakdown strength? A 1 Solid Liquid Gaseous All of these
dielectrics dielectrics dielectrics
46 1 Which of the following statements is true for rubber dielectric C 1 Both are true Both are false Only 1 is true Only 2 is true
material?
1. It has good electrical and thermal properties
2. It has low tensile strength
47 1 Asbestos has ______ dielectric loss and _______dielectric strength C 1 High, high Low, low High, low Low, high

48 1 Explain types of dielectric materials in detail. 7

49 1 Discuss solid dielectric materials 3
50 1 Discuss liquid dielectric materials 3
51 1 Discuss gaseous dielectric materials 3
52 1 List some solid dielectric materials 3
53 1 List some gaseous dielectric materials 3
54 1 Capacitors with ________ dielectrics are used in radio frequency C 1 Solid Liquid Gaseous All of these
and low frequency applications? dielectrics dielectrics dielectrics
55 1 Capacitors with ________ dielectrics are used in high voltage B 1 Solid Liquid Gaseous All of these
applications? dielectrics dielectrics dielectrics
56 1 Capacitors with ________ dielectrics are used in laboratory as A 1 Solid Liquid Gaseous All of these
standard capacitors? dielectrics dielectrics dielectrics
57 1 ________ is used as a coolant that also maintains the insulation of A 1 Transformer Silicon oil Sovol Vaseline
the winding in a transformer oil
58 1 The use of _______ in transformers prevents oxidation? B 1 Air Nitrogen Sulphurhexaflu Inert gas
oride
59 1 Discuss the role of dielectric materials in capacitors. 3
60 1 Discuss the role of dielectric materials in transformers. 3
61 2 Define magnetic material 1
62 2 Define Magnetization 1
63 2 Define magnetic poles 1
64 2 Define pole strength 1
65 2 Define magnetic length 1
66 2 Define magnetic field 1
67 2 Define magnetic lines of force 1
68 2 Define magnetic flux density 1
69 2 Define magnetic moment 1
70 2 Define magnetic field intensity 1
71 2 Define magnetisation 1

Page 2 of 25
 L.J Institute of Engineering and Technology, Ahmedabad.
Physics Question Bank (SEM-I-2022 CE,IT,CSD,AIML,AIDS,CS&IT,CSE,CST,CEA,EC Engineering )
Note :
This question bank is only for reference purpose. LJU Test question paper may not be completely set from this question bank.
Sr Unit MCQ
No Number Question_Text Marks Option A Option B Option C Option D
Answer
72 2 Define permeability 1
73 2 Define magnetic susceptiblity 1
74 2 Explain relation between B,H and M 4
75 2 A Magnetic field strength of 2×105 A/m in applied to paramagnetic 3
material with relative permeability of 1.01. Calculate the values of
B and M.
76 2 A silicon material is subjected to a magnetic field of strength 1000 3
A/m. If the magnetic susceptibility of silicon is -0.3 × 10-5, calculate
its magnetisation. Also calculate the magnetic flux density of the
field inside the material. The permeability of free space is
4π × 10-7 H/m

77 2 Which one is not having permanent dipoles in absence of D 1 Paramagnetic Ferromagnetic Ferrimagnetic diamagnetic
magnetic field? material material material material

78 2 Magnetic susceptibility (χm) equals ___________ C 1 dipole torque per magnetization none of these
moment per unit area per unit
unit volume magnetic field
intensity
79 2 Which of the following is the unit of magnetic flux density? B 1 Weber/meter Tesla Newton-m/A All of these
80 2 The magnetism of a magnet is due to D 1 Earth Cosmic rays due to spin motion of
pressure of big electrons
magnet inside
the earth

81 2 Which of the following statements is true about magnetic lines of A 1 Magnetic lines Magnetic lines Magnetic lines Magnetic lines
force? of force are of force always of force tend of force do not
always closed. intersect each to crowd far pass through
other. away from the the vacuum.
poles of the
magnet

82 2 Basic source of magnetism ______________. B 1 Charged Movement of Magnetic Magnetic

particles alone charged dipoles domains
particles
83 2 Magnetic permeability has units as_______ B 1 2 Wb / A.m A/m Tesla/m
Wb / m
84 2 The unit of magnetic field strength is______ C 1 2 Wb / A.m A/m Tesla/m
Wb / m
85 2 The ratio of intensity of magnetization to the magnetization force B 1 Flux density Susceptibility
Relative None of these
is known as permeability
86 2 Which of the following is not a unit of flux? B 1 Maxwell Tesla Weber All of these
2
87 2 One tesla is equal to______ C 1 1 Wb/mm 1 Wb/m 1 Wb/m2 1 mWb/m2
88 2 The direction of magnetic lines of force is B 1 From South From North From one end None of these
Pole to North Pole to South of the magnet
Pole Pole to another

89 2 Which of the following is a vector quantity? B 1 Relative Magnetic field Flux density Magnetic
permeability intensity potential
90 2 The unit of relative permeability is _____ D 1 Henry/m Henry Henry / sq-m Unitless
91 2 The magnetization is defined by the ratio of B 1 Magnetic Magnetic Magnetic flux Magnetic flux
moment to moment to density to area density to
area volume volume
92 2 A paramagnetic material has a magnetic field intensity of 104 A/m. 3
-
If the susceptibility of the material at room temperature is 3.7x10
3
, calculate the magnetization and flux density of the material

93 2 Magnetic field intensity of a paramagnetic material is 104 A/m. At 3

room temperature, its susceptibility is 3.7x 10-3. Calculate the
magnetization in the material.
94 2 A magnetic material has a magnetization of 3400 A/m and flux 3
density of 0.0048 Wb/m2. Calculate the magnetic field and relative
permeability of the material.
95 2 The magnetic field strength of copper is 106 A/m. If the magnetic 3
susceptibility of copper is 0.8 x 10-5, calculate the flux density and
magnetization in copper.
96 2 A magnetic field of 1800 A/m produces a magnetic flux of 3 x10-5 3
Wb in an iron bar of cross sectional area 0.2 cm2. Calculate
permeability.
Page 3 of 25
 L.J Institute of Engineering and Technology, Ahmedabad.
Physics Question Bank (SEM-I-2022 CE,IT,CSD,AIML,AIDS,CS&IT,CSE,CST,CEA,EC Engineering )
Note :
This question bank is only for reference purpose. LJU Test question paper may not be completely set from this question bank.
Sr Unit MCQ
No Number Question_Text Marks Option A Option B Option C Option D
Answer
97 2 A magnetic material has a magnetization of 2300 A/m and flux 3
density of 0.00314 Wb/m2. Calculate the magnetizing field and
relative permeability of the material.
98 2 Describe and Explain contributions to magnetic moments of the 7
materials.
99 2 The Bohr magneton is given by_________ D 1 eh/2m eh/2πm eh/4m eh/4πm
100 2 The value of Bohr magneton is______ B 1 9.27 x 1024 A / 9.27 x 1024 9.27 x 1021 A / 9.27 x 1021
m2 Am2 m2 Am2
101 2 The magnetic moment of the atom is mainly due to_______ C 1 Orbital Spin Both A and B None of these
motion of electrons.
102 2 The possible value of spin magnetic moment for each electron in C 1 +μB -μB Both A and B Zero
an atom can be_______
103 2 Which of the following contributions to the magnetic moment of C 1 Due to orbital Due to spin of Due to nuclear All of these
the atom can be ignored? angular electrons spin
momentum of
electrons
104 2 Define Diamagnetism and its general Properties 5
105 2 Define Paramagnetism and its general Properties 5
106 2 Define Ferromagnetism and its general Properties 5
107 2 Define AntiFerromagnetism and its general Properties 5
108 2 Comparision between Diamagnetic,paramagnetic and 6
ferromagnetic matrial
109 2 For which of the following is magnetic susceptibility negative? D 1 Paramagnetic Paramagnetic Ferromagnetic Diamagnetic
and Materials only Materials only Materials
Ferromagnetic
materials
110 2 Which of the following materials can behave as permanent C 1 Diamagnetic Paramagnetic Ferromagnetic Anti
magnets? ferromagnetic

111 2 For which of the following materials the net magnetic moment is A 1 Diamagnetic Ferrimagnetic Ferromagnetic None of these
zero? materials
112 2 Paramagnetic materials have relative permeability C 1 Slightly less Equal to unity Slightly more
Equal to that
than unity than unity
ferromagnetic
materials
113 2 Susceptibility is positive for__________ C 1 Nonmagnetic Diamagnetic Ferromagnetic None of the
substances substances substances above
114 2 A magnetic material that is repelled by magnetic field is A 1 Diamagnetic Paramagnetic Ferromagnetic Anti
called______ ferromagnetic

115 2 Explain hysteresis. 5

116 2 Draw B-H curve for a ferromagnetic material and identify 4
retentivity and coercive fields on the curve
117 2 What is retentivity? 1
118 2 What is Coercivity? 1
119 2 What are hard and soft magnetic materials? Compare them on 7
the basis of hysteresis curve, Give examples of each type.
120 2 The magnetism left in the iron after exciting field has been B 1 Permeance Residual Susceptance Reluctance
removed is known as magnetism
121 2 The area of his hysteresis loss is a measure of_______ C 1 Permittivity Permeance Energy loss per Magnetic flux
cycle
122 2 In order to minimise hysteresis loss, the magnetic material should D 1 Large B - H Large High Low retentivity
have______ loop area coercivity retentivity
123 2 B/H curve shows the relationship between? B 1 Magnetic field Magnetic field Current and Voltage and
strength and strength and magnetic flux magnetic flux
magnetic flux magnetic flux density density
density
124 2 The value of H needed to make the intensity of magnetic field zero B 1 Retentivity Coercivity Permeability Susceptibilty
is called______.
125 2 Which of the following materials are commonly used in magnetic D 1 Ferromagnetic Ferrimagnetic Paramagnetic Both A and B
storage?
126 2 The hard disc records information by_______. C 1 Propagation Gravitation Magnetization None of these

127 2 Which of the follwing can store maximum amount of data? B 1 Compact disc Hard disc Floppy disc Magneto optic
disc
128 2 Hard disc is a type of ______ storage. B 1 Volatile Non-volatile Flash Cache
129 2 The storage device which can retain the stored information even B 1 Volatile Non-volatile Flash Cache
when the power is off is called________

Page 4 of 25
 L.J Institute of Engineering and Technology, Ahmedabad.
Physics Question Bank (SEM-I-2022 CE,IT,CSD,AIML,AIDS,CS&IT,CSE,CST,CEA,EC Engineering )
Note :
This question bank is only for reference purpose. LJU Test question paper may not be completely set from this question bank.
Sr Unit MCQ
No Number Question_Text Marks Option A Option B Option C Option D
Answer
130 2 Which of the following statements is true for magnetic hard disc? A 1 Only 1 is true Only 2 is true Both are true Both are false
1. Access time is very less during reading and writing datas.
2.Recovery of data is possible if the data is corrupted.

131 2 Explain the process of recording and reading data in magnetic hard 5
disc.
132 2 State few advantages and disadvantages of magnetic hard disc. 4

133 3 What do you mean by vector and scalar quantities? Explain. 3

134 3 Explain products of vectors. 7
135 3 The expression of dot product of vectors C and D is _______ A 1 CD cosθ CD sinθ CD Zero
136 3 The expression of dot product of vectors C and D when they are C 1 CD cosθ CD sinθ CD Zero
parallel to each other is _______
137 3 The expression of dot product of vectors C and D when they are D 1 CD cosθ CD sinθ CD Zero
perpendicular to each other is _______
138 3 The expression of dot product of vectors C and D when they are C 1 CD cosθ CD -CD Zero
opposite to each other is _______
139 3 According to the identity of dot product, _________ A 1 A.B=B.A A . B = '-B . A AB sinθ -AB sinθ
140 3 The expression of cross product of vectors C and D is _______ B 1 CD cosθ CD sinθ CD Zero
141 3 Calculate A . B and angle between A and B for vector A = 5ax + 4ay 3
+ 3 az and B = 2ax + 3ay + 4az.
142 3 Two vectors are given as A = ax + ay and B = ax + 2ay - 2az. 3
Determine A . B and angle between A and B
143 3 Two vectors are given as A = ax + ay and B = ax + 2ay - 2az. 3
Determine A x B and angle between A and B
144 3 Calculate A . B and angle between A and B for vector A = 2ax + 2ay - 3
az and B = ax - 3ay + 4az.
145 3 Calculate A x B and angle between A and B for vector A = 2ax + 2ay - 3
az and B = ax - 3ay + 4az.
146 3 The expression of cross product of vectors C and D when they are D 1 CD cosθ CD sinθ CD Zero
parallel to each other is _______
147 3 Which of the following statements is true in case of product of A 1 Only 1 is true Only 2 is true Both are true Both are false
vectors?
1. Dot product is commutative.
2. Cross product is commutative.
148 3 Define gradient, divergence and curl. 3
149 3 ______ is the net outward flux of any vector per unit volume as A 1 Divergence Gradient Curl None of these
the volume about the point shrinks to zero.
150 3 Which of the following statements is true in case of Divergence? C 1 Only 1 is true Only 2 is true Both are true Both are false
1. The divergence of a vector is a scalar.
2. The value of divergence depends on the position of the point at
which it is evaluated.

151 3 Find the gradient of the function given by, x2 + y2 + z2 at (1,1,1) B 1 i+j+k 2i + 2j + 2k 2xi + 2yj + 2zk 4xi + 2yj + 4zk

152 3 Compute the divergence of the vector xi + yj + zk. D 1 0 1 2 3

153 3 Find the divergence of the vector yi + zj + xk. B 1 -1 0 1 3
154 3 Find the divergence of the vector F= xe-x i + y j – xz k A 1 -x -x (1 – x)(1 – e) (x – 1)(1 – e)
(1 – x)(1 + e ) (x – 1)(1 + e )
155 3 Find the divergence of the field, P = x2yz i + xz k B 1 xyz + 2x 2xyz + x xyz + 2z 2xyz + z
156 3 Find the gradient of function φ. 3
1. φ = cos xyz
2. φ = x2 + y2 + z2
157 3 If φ(x, y, z) = 3x2y - y3z2, find ∇φ at the point(1, -2,-1). 3
158 3 If A = 3x2yax - 2y2z2ay + xy2zaz find ∇A at the point(1, -1,1). 3
159 3 Determine curl of vector A = ax(2x2 + y2) + ay(xy -y2) and B = yzax + 3
4xy ay + yaz
160 3 Find out the divergence of the following function, A = 2xyax+ 3
2 3
x zay+z az
161 3 Find out the curl of the following function, A = 2xyax+ x2zay+z3az 3

162 3 Find the curl of vector field yax - xay. and yzax + zxay + xyaz 5
163 3 The Cartesian system is also called as B 1 Circular Rectangular Spherical Space
coordinate coordinate coordinate coordinate
system system system system

Page 5 of 25
 L.J Institute of Engineering and Technology, Ahmedabad.
Physics Question Bank (SEM-I-2022 CE,IT,CSD,AIML,AIDS,CS&IT,CSE,CST,CEA,EC Engineering )
Note :
This question bank is only for reference purpose. LJU Test question paper may not be completely set from this question bank.
Sr Unit MCQ
No Number Question_Text Marks Option A Option B Option C Option D
Answer
164 3 Which of the following statements is true? C 1 Only 1 is true Only 2 is true Both are true Both are false
1.The Cartesian coordinates can be related to cylindrical
coordinates and spherical coordinates.
2.The scalar factor of Cartesian system is unity. State True/False.

165 3 A charge is placed in a square container. The position of the C 1 Spherical Circular Cartesian Space
charge with respect to the origin can be found by______ system system system coordinate
system
166 3 The cylindrical coordinate system is also referred to as B 1 Cartesian Circular Spherical Space system
system system system
167 3 A charge located at point p (5,30⁰,2) is said to be in which B 1 Cartesian Cylindrical Spherical Space system
coordinate system? system system system
168 3 Find expressions for differential lengths, area and volume for 5
cartesian system.
169 3 Find expressions for differential lengths, area and volume for 5
cylindrical system.
170 3 Find expressions for differential lengths, area and volume for 7
spherical system.
171 3 dr, rdθ, rsinθ dφ are the differential lengths for _________ C 1 Cartesian Cylindrical Spherical Space system
system system system
172 3 dr, rdφ, dz are the differential lengths for _________ B 1 Cartesian Cylindrical Spherical Space system
system system system
173 3 dx, dy, dz are the differential lengths for _________ A 1 Cartesian Cylindrical Spherical Space system
system system system
174 3 dv = rdrdφdz is the differential volume for ________ B 1 Cartesian Cylindrical Spherical Space system
system system system
175 3 ________is the diffrential volume for spherical system. C 1 dv = rdrdφdz dv= dx dy dz dv = r2sinθ dr dv = rsinθ dr
dθ dφ dθ dφ
176 3 The vector differential length in cylindrical system is given A 1 dl= drar + dl= drar + dφar dl= drar + dl= drar - rdφar
by_________ rdφar + dzaz + dzaz r2dφar + dzaz + dzaz
177 3 Which of the following is not true for differential area of D 1 ds = r dφ dz ar ds = drdz aφ ds = rdrdφ az ds = rdr dθ aφ
Cylindrical system?
178 3 ∇ x H = J is the point form of Maxwell's equation derived from B 1 Faraday's law Ampere's law Gauss Gauss
________ law(Electric law(Magnetic
field) field)
179 3 ∇ x E = 0 is the point form of Maxwell's equation derived from A 1 Faraday's law Ampere's law Gauss Gauss
________ law(Electric law(Magnetic
field) field)
180 3 Mathematically, Faraday's law is expressed as_________ A 1 ∲E. dl = 0 ∲E. dl = 1 ∲V. dl = 0 ∲V. dl = 1
181 3 The statement of Faraday's law is_______ B 1 The line The EMF is The total The total
integral of H induced in a electric flux magnetic flux
aroung a single loop when the crossing the crossing the
closed path is magnetic flux closed surface closed surface
equal to the is changing in is equal to the is zero.
current the vicinity of total charge
enclosed by it. enclosed by
that path. that surface.

182 3 The statement of Ampere's law is_______ A 1 The line The EMF is The total The total
integral of H induced in a electric flux magnetic flux
aroung a single loop when the crossing the crossing the
closed path is magnetic flux closed surface closed surface
equal to the is changing in is equal to the is zero.
current the vicinity of total charge
enclosed by it. enclosed by
that path. that surface.

183 3 The total electric flux crossing the closed surface is equal to the C 1 Faraday's law Ampere's law Gauss Gauss
total charge enclosed by that surface is the statement of ______ law(Electric law(Magnetic
field) field)
184 3 Derive the point form of Maxwell's equation from Faraday's law. 3

185 3 Derive the point form of Maxwell's equation from Ampere's law. 3

186 3 Derive the point form of Maxwell's equation from Gauss's law for 3
Electric field.
187 3 Derive the point form of Maxwell's equation from Gauss's law for 3
Magnetic field.
Page 6 of 25
 L.J Institute of Engineering and Technology, Ahmedabad.
Physics Question Bank (SEM-I-2022 CE,IT,CSD,AIML,AIDS,CS&IT,CSE,CST,CEA,EC Engineering )
Note :
This question bank is only for reference purpose. LJU Test question paper may not be completely set from this question bank.
Sr Unit MCQ
No Number Question_Text Marks Option A Option B Option C Option D
Answer
188 3 Point form of Maxwell's equation derived from current continuity D 1 ∇xH=J ∇xE=0 ∇.B=0 ∇.J=0
equation can be written as________
189 3 Discuss continuity equation for current and displacement current 5

190 4 Define Ultrasonic waves 1

191 4 Classify the sound based on its frequencies. 1
192 4 Sound having frequency higher than 20 KHz is called________ B 1 Infrasonic Ultrasonic Audible sound None of these
waves waves
193 4 Frequency range for ultrasonic sound wave is___________. C 1 < 2 Hz 20Hz- > 20 kHz 2 Hz-10Hz
20,000Hz
194 4 The frequency of Infrasonic wave is ______. C 1 < 2 Hz 20Hz- < 20 Hz 2 Hz-10Hz
20,000Hz
195 4 Which one is not correct for Ultrasonic waves? C 1 Type of sound longitudinal Transverse mechanical
wave wave wave wave
196 4 Which of the following waves does not belong to the D 1 X-rays Microwave Infrared Ultrasonic
electromagnetic spectrum? wave
197 4 State properties of Ultrasonic Waves. 4
198 4 Which of the following is correct for Ultrasonic waves? B 1 Only 1 is true Only 2 is true Both are true Both are false
1. They have very high wavelength.
2. They have a high penetration depth.
199 4 Ultrasonic waves are ___ and ___ waves. D 1 longitudinal longitudinal transverse and longitudinal
and transverse and progressive and
progressive mechanical
200 4 Ultrasonic waves can be transmitted over long distances without B 1 Variable Small Medium Large
any appreciable loss of energy because of their ______wavelength

201 4 Which of the following statements are correctly associated with A 1 1 only 1 and 2 1 and 3 2 and 3
ultrasonic waves?
1.These are the acoustic waves of frequencies more than 20,000
Hertz.
2.When possible to use, these waves are preferred over X-rays for
getting an image of internal organs because they are not harmful.
3.Their velocity is more than the velocity of sound.

202 4 Ultrasonic waves are also called C 1 Super Position SONAR waves Super Sonic Infra Sonic
Waves Waves Waves

203 4 The speed of sound in medium depends upon A 1 Properties of Amplitude Frequency Wavelength
the medium
204 4 A sound source sends waves of 400 Hz. It produces waves of B 1 100 m/s 1000 m/s 10000 m/s 3000 km/s
wavelength 2.5 m. The velocity of sound waves is _______.
205 4 Sound waves shows which of following properties D 1 Reflection Refraction Diffraction All of the
above
206 4 Sound waves do not show which of the following properties? C 1 Reflection Refraction Polarization Interference
207 4 Wavelength of sound is _____ D 1 Distance Distance Distance All of the
traveled by between two between two above
the sound adjacent adjacent
wave during compressions rarefaction
one vibration
of a particle
208 4 A sound wave of wavelength 10 cm traveling with a speed of 340 C 1 34 Hz 340 Hz 3400 Hz 1/34 Hz
m/s has c frequency of _______.
209 4 A sound wave of wavelength 10 cm traveling with a speed of 340 B 1 1/34 s 1/3400 s 3400 s 34 s
m/s has time period ________.
210 4 The distance travelled by sound wave of frequency 3.4 kHz B 1 100 10 1 0.1
traveling with a b speed of 340 m/s in one time period is ____ m

211 4 Bats produce during their flying A 1 ultrasonic radio waves microwaves infrasonic
waves waves
212 4 When a sound wave of wavelength 10 cm travels with a speed of C 1 34 340 3400 1/34
340 m/s the c particles of the medium vibrate at the rate of ___
vibrations per second
213 4 Magnetostriction effect is obtained from ________ material. C 1 Diamagnetic Paramagnetic Ferromagnetic Ferrimagnetic

214 4 Explain Magnetostriction effect. 3

215 4 Describe the principle and the method of producing of ultrasonic 7
waves by Magnetostriction method(with diagrams).

Page 7 of 25
 L.J Institute of Engineering and Technology, Ahmedabad.
Physics Question Bank (SEM-I-2022 CE,IT,CSD,AIML,AIDS,CS&IT,CSE,CST,CEA,EC Engineering )
Note :
This question bank is only for reference purpose. LJU Test question paper may not be completely set from this question bank.
Sr Unit MCQ
No Number Question_Text Marks Option A Option B Option C Option D
Answer
216 4 Write the answers of below given questions based on the 7
ultrasonic waves production method using ferromagnetic material.
(1) What is the principle for ultrasonic wave production?
(2) Draw a figure of the oscillatory circuit.
(3) Write the working of the ultrasonic wave production
method.
(4) Give merits and demerits of the method

217 4 Draw the circuit diagram for Magnetostriction oscillator method 3

218 4 Explain Piezoelectric effect. 3

219 4 Draw circuit diagram of piezoelectric oscillator and explain the 7
production of ultrasonic waves using it
220 4 Draw the circuit diagram for Piezoelectric oscillator method 3

221 4 Calculate the frequency to which piezoelectric oscillator circuit 3

should be tuned so that a piezoelectric crystal of thickness 0.1cm
vibrates in its fundamental mode to generate ultrasonic
waves.(Young-s modulus and the density of material of crystal are
80 Gpa and 2654 kg/m3)
222 4 Calculate the capacitance required to produce ultrasonic waves of 3
106 Hz with an inductance of 1 Henry.
223 4 The wavelength of light transmitted through a liquid is 6000 Å. The 3
first order angle of diffraction is 0.046o. Calculate the velocity of
ultrasonic waves in the liquid. The frequency of the ultrasonic
waves produced by the transducer is 2MHz.
224 4 Calculate the thickness of a quartz plate needed to produce 3
ultrasonic waves of frequencies (i) 2MHz (ii) 30KHz. (Given ƍ=
3 10 2
2650Kg/m and Young-s Modulus = 8 x10 N/m .
225 4 Calculate the length of an iron rod which can be used to produce 3
ultrasonic waves of 20 KHz. Density of iron is 7.23 x
103kg/m3andYoung’s modulus is 11.6 x 1010 N/m2.
226 4 In Magnetostriction method the length of rod is kept 10 mm. If the 3
inductance of the coil is 25 mH. Find (i) The value of resonance
Frequency and (ii) The value of capacitance to produce an
ultrasonic wave at resonance. (E=125 GPa and ρ =3568kg/m3)

227 4 Which of the following effects can be used to produce ultrasonic A 1 Magnetostricti Doppler Effect Magnetic Sound effect
waves? on effect effect
228 4 When is ultrasonic waves produced using piezo electric oscillator? B 1 At constant At resonance At constant At constant
temperature pressure voltage
229 4 Which of the following is true for Magnetostriction oscillator? A 1 Only 1 is true Only 2 is true Both are true Both are false
1. It uses ferromagnetic materials for generation of ultrasonic
waves.
2. It generates ultrasonic waves of frequency upto 500MHz.

230 4 Piezoelectric effect is when materials produce electric charges B 1 Voltage is Mechanical Electric field is Magnetic field
when ____________ applied Stress is applied is applied
applied
231 4 The working principle of generating ultrasonic waves using Quartz C 1 Magnetostricti Piezoelectric Inverse None of these
is __________ on effect effect piezoelectric
effect
232 4 Piezoelectric oscillator consists of _________ D 1 copper rod aluminum wire gold crystal quartz crystal

233 4 What is piezoelectric effect in a crystal? D 1 Change in Change in Current Voltage

resistance due frequency due developed due developed due
to to to force to mechanical
temperature temperature applied stress

234 4 Which of the following method is used to produce the sound of D 1 Magnetostricti Piezo-electric Inverse piezo- Both A and B
frequency more than 20kHz? on method method electric
method

Page 8 of 25
 L.J Institute of Engineering and Technology, Ahmedabad.
Physics Question Bank (SEM-I-2022 CE,IT,CSD,AIML,AIDS,CS&IT,CSE,CST,CEA,EC Engineering )
Note :
This question bank is only for reference purpose. LJU Test question paper may not be completely set from this question bank.
Sr Unit MCQ
No Number Question_Text Marks Option A Option B Option C Option D
Answer
235 4 In the magnetostriction method, a ferromagnet substance D 1 magnetic field alternating Both A and B None of these
changes its shape and size when placed in a ______ current
236 4 In magnetostriction method of ultrasonic sound production, A 1 a a magnetic a dielectric rod a conducting
_______ ferromagnetic cube is used is used rod is used.
rod is used
237 4 In the phenomenon of Magnetostriction the length of the C 1 Increases Decreases Changes Remain same
ferromagnetic rod
238 4 Which one of the following materials is not a ferromagnetic A 1 Quartz Nickel Cobalt Iron
material?
239 4 A piezoelectric crystal is used to produce the ultrasound waves. A 1 Pressure wave Electrical wave Sound wave Simple
What kind of ultrasound is produced? ultrasound ultrasound ultrasound ultrasound

240 4 The capacitance to produce ultrasonic waves of frequency 2 x 106 D 1 0.0063 nF 0.0063 pF 0.0063 mF 0.0063 μF
Hz with an inductance of 1 H is ______
241 4 In Magnetostriction effect, the natural frequency of vibration is D 1 Inversely Directly Inversely All of the
_____ proportional proportional proportional above
to length to square root to square root
of Young’s of density
modulus

242 4 Describe the methods for the detection of ultrasonic waves. 5

243 4 Explain Kundt`s tubes method for the detection of Ultrasonic 5
Sound.
244 4 Explain thermal detection method for the detection of ultrasonic 3
waves.
245 4 What is an acoustical grating? 1
246 4 What is an acoustic grating? Describe an experimental method of 7
determining the velocity of ultrasonic waves in liquids

247 4 Which of the following causes acoustical grating? D 1 Magnetic Electric waves Magnetostricti Ultrasonic
waves on effect waves
248 4 What is the principle for measurement of the velocity of ultrasonic B 1 Magnetostricti Acoustical Doppler Effect Acceleration
waves? on effect grating effect
249 4 Which of the following is not a quantitative method? B 1 Piezoelectric Sensitive Kundt's tube Acoustic
crystal method flame method method grating
method
250 4 When a pressure is applied to a quartz crystal then ____________ D 1 positive negative no charge is both positive
charges are charges are induced and negative
induced induced charges are
induced
251 4 __________ is not an example of Piezoelectric material D 1 Quartz Tourmaline Rochelle salt Glass
252 4 Which of the following is true for sensitive flame method? B 1 Only 1 is true Only 2 is true Both are true Both are false
1. It is a quantitative method.
2. The flame flickers at the nodes.
253 4 Quartz crystal method of ultrasonic waves works on the principle A 1 Piezoelectric Inverse Magnetostricti None of these
of _______ method Piezoelectric on method
method
254 4 ________ wire is used in thermal detection method of ultrasonic D 1 Nickel Lead Copper Platinum
waves.
255 4 Which of the following method is used to detect ultrasonic waves? D 1 Piezoelectric Sensitive Kundt’s tube All of these
method flame method method

256 4 A sensitive flame can be used to detect ultrasonic waves C 1 it is sensitive it is sensitive a and b none of these
because_____ to mechanical to density
pressure variation

257 4 In Kundt’s tube method, C 1 talcum a vertical glass Lycopodium All are correct.
powder is used tube is used powder can be
used
258 4 The property of ultrasonic waves to produce heating effect in the B 1 Sensitive Thermal Kundt’ s tube Piezoelectric
medium is used for their detection in __ method flame detector
259 4 Explain the applications of ultrasonics. 5
260 4 What is ultrasonic welding? Why is it called cold welding? 5
261 4 Explain what is ultrasonic cutting/drilling. Also state some of its 5
uses.
262 4 Which of the following statements are true for ultrasonic welding? C 1 Only 1 is true Only 2 is true Both are true Both are false
1. Welding is done without melting.
2. It is used to join dissimilar metals.
Page 9 of 25
 L.J Institute of Engineering and Technology, Ahmedabad.
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Note :
This question bank is only for reference purpose. LJU Test question paper may not be completely set from this question bank.
Sr Unit MCQ
No Number Question_Text Marks Option A Option B Option C Option D
Answer
263 4 Which of the following uses ultrasonic sound waves? D 1 Non- SONAR Ultrasonograp All of these
destructive hy
testing
264 4 What is Ultrasonic cleaning? Explain. Also discuss its uses 5
265 4 What is Cavitation? Explain. 4
266 4 Which of the following statements are true for ultrasonic C 1 Only 1 is true Only 2 is true Both are true Both are false
drilling/cutting?
1. It is used to cut materials of high impact brittleness.
2. It uses abrasive materials for drilling/cutting.
267 4 What is cold welding? B 1 Welding at Welding using Welding under Welding at
very low ultrasonic water constant
temperature waves temperature

268 4 Full form of SONAR is …………. C 1 Sound Solar Sound Solar Negative
Negative and Navigation and Navigation and and Ranging
Radiation Radiation Ranging
269 4 Explain the applications of ultrasonics. 5
270 4 Write short note on SONAR. 3
271 4 How can the depth of sea be measured using ultrasonic waves? 3

272 4 An ultrasonic source of (i) 0.09 MHz (ii) 1 MHz sends down a pulse 3
towards the seabed which returns after 0.55 sec. The velocity of
sound in water is 1800 m/s. Calculate the depth of the sea and
wavelength of pulse
273 4 An ultrasonic source of 0.07 MHz sends down a pulse towards the 3
seabed which returns after 0.65 sec. The velocity of sound in
water is 1700 m/s. Calculate the depth of the sea and wavelength
of pulse
274 4 The speed of ultrasonic waves of frequency 75 kHz in water is B 1 2 mm 2 cm 2m 20 m
1500 m/s. The wavelength of these waves is
275 4 Each part of hologram contains information about _________ A 1 entire object particular part important front side of
of the object part of the the object
object
276 5 State the full form of LASER Light 1
Amplifica
tion by
stimulate
d
emission
of
Radiation

277 5 Which one is not correct for LASER? B 1 Highly highly highly highly
monochromati polychromatic coherent light directional
c light light light
278 5 State the characteristics of LASER. Coherenc 1
e
High
Intensity
High
Direction
ality
High
Monochr
omaticity

279 5 State and explain the characteristics of laser. 4

280 5 Which of the following is a unique property of laser? C 1 Directional Speed Coherence Wavelength
281 5 Which of the following statements is true? C 1 Only 1 is true Only 2 is true Both are true Both are false
1. Laser beam has very high intensity and directional properties.
2. When laser light is focussed on a particulkar area for a long
time, then that particular area will be heated.

Page 10 of 25
 L.J Institute of Engineering and Technology, Ahmedabad.
Physics Question Bank (SEM-I-2022 CE,IT,CSD,AIML,AIDS,CS&IT,CSE,CST,CEA,EC Engineering )
Note :
This question bank is only for reference purpose. LJU Test question paper may not be completely set from this question bank.
Sr Unit MCQ
No Number Question_Text Marks Option A Option B Option C Option D
Answer
282 5 LASER is abbreviations used for B 1 Name of Light Light Light
scientist amplification amplification absorption by
by stimulated by sun and earth
emission of spontaneous radiation
radiation emission of
radiation
283 5 A Laser beam is monochromatic. It means it has A 1 Single Wide Width Narrow Width Several
Frequency Colours
284 5 Which of the following is not the property of laser? D 1 Coherence High Extreme Divergence
directionality brightness
285 5 Derive the relation between Einstein’s ‘A’ and ‘B’ coefficients. 6
286 5 What is Einstein coefficient? 1
287 5 Show that the ratio of Einstein A coefficient for spontaneous 6
emission to that of Einstein B coefficient for stimulated emission is
given by 8πhν3/C3
288 5 The mathematical expression for existence of stimulated emission A 1 Einstein Ohm Newton Pascal
is proposed by ___________(
289 5 Process in which a photon is absorbed by the atom, causing an A 1 Absorption of Spontaneous Stimulate Population
electron to jump from a lower energy level to a higher energy Radiation Emission Emission Inversion
level.
290 5 Which formula is giving the correct absorption of radiation D 1 h= (E2 + E1)/v h= (E1 – E2)/v v= (E2 + E1)/h v= (E2 – E1)/h
291 5 Process in which an electron without any outside influence decays B 1 Absorption of Spontaneous Stimulate Population
from a higher energy level to a lower energy level Radiation Emission Emission Inversion
292 5 Process in which an electron with the help of outside influence C 1 Absorption of Spontaneous Stimulate Population
decays from a higher energy level to a lower energy level Radiation Emission Emission Inversion

293 5 The Process by which an electron-induced to jump from a Higher B 1 Spontaneous Stimulated Both 1 and 2 None of These
energy level to a lower energy level by the presence of Emission Emission
Electromagnetic Radiation is called___
294 5 Which emission has a broad spectrum and many wavelengths? A 1 Spontaneous Stimulated Both 1 and 2 None of These
Emission Emission
295 5 Which emission has monochromatic radiation and a single B 1 Spontaneous Stimulated Both 1 and 2 None of These
wavelength? Emission Emission
296 5 Stimulated emission rate depends on _____ C 1 intensity of number of both 1 & 2 none of these
the external atoms in the
radiation excited state
297 5 The ratio of Einstein’s coefficient A and B can be expressed as C 1 8πhC³/V³ 8πhV/C³ 8πhV³/C³ 8πhdV
298 5 Name the main components of LASER system Optical 1
Resonato
r

Pumping
Source

Active
Medium
299 5 The LASER can be produced by A 1 Stimulated spontaneous Instantaneous Induced
Emission emission emission Absorbtion
300 5 Define Metastable state 1
301 5 Define: (1) Population Inversion (2) Stimulated Emission (3) Life 5
Time (4) Metastable State.
302 5 What are population inversion and optical pumping? 2
303 5 State condition for population inversion. N2>N1 1
304 5 What is an optical resonator cavity? What role does it play in a 2
laser?
305 5 Define: Pumping, Life time 3
306 5 What are population inversion, optical pumping and active 3
medium for laser?
307 5 Briefly explain spontaneous and stimulated emission 6
308 5 State the differences between laser light and ordinary light. 4
309 5 Briefly explain Stimulated emission 4
310 5 Briefly explain Induced Absorbtion 4
311 5 Difference between spontaneous and stimulated emission 6
312 5 The life time of an atom in meta stable state is of order of A 1 10-3 – 10-2 10-9 – 10-8 10-8 – 10-6 10-6 – 10-3
_______ seconds.
313 5 What is the life time of charge carrier in excited state? B 1 10-3 – 10-2 10-9 – 10-8 10-4 – 10-2 10-6 – 10-3

Page 11 of 25
 L.J Institute of Engineering and Technology, Ahmedabad.
Physics Question Bank (SEM-I-2022 CE,IT,CSD,AIML,AIDS,CS&IT,CSE,CST,CEA,EC Engineering )
Note :
This question bank is only for reference purpose. LJU Test question paper may not be completely set from this question bank.
Sr Unit MCQ
No Number Question_Text Marks Option A Option B Option C Option D
Answer
314 5 What is the need to achieve population inversion? A 1 To excite most To bring most To achieve To reduce the
of the atoms of the atoms stable time of
to ground condition production of
state laser
315 5 Which is the Process to Achieve the Condition of Population A 1 Pumping Emission Both 1 & 2 None of These
Inversion
316 5 Presence of a metastable state is essential for B 1 spontaneous stimulated stimulated non-radiative
emission emission absorption transition
317 5 An active medium is that B 1 which can in which population which can
move population inversion can interact with
inversion is never be another
created created medium
318 5 The process of population inversion is to increase the number of A 1 excited state ground state intermediate None of These
atoms in the ____ state
319 5 If N1, N2 be the number of atoms in energy States E1, E2 (E2>E1) B 1 N1 > N2 N1 < N2 N1 = N2 N1 >= N2
then the condition of inverse population is _______
320 5 Which of the following condition is very essential for the D 1 Spontaneous Stimulated Population All of the
production of laser light? emission emission inversion above
321 5 Which is correct about laser? A 1 monochromati white bi-chromatic none
c
322 5 The population inversion is to........................ A 1 Depopulate Depopulate Depopulate Depopulate
lower energy higher energy metastable understable
state state state state
323 5 Which of the following process is not a pumping? D 1 optical electrical chemical thermal
pumping pumping pumping pumping
324 5 The stimulated emission of radiation means ................................... A 1 before before after none of these
completion of completion of completion of
life time, life time, life time,
stimulation of stimulation of stimulation of
an atom from an atom from an atom from
higher state to lower state to ground state
lower energy higher energy to lower
state state energy state

325 5 The spontaneous emission produces ___ B 1 coherent light incoherent white light monochromati
light c light
326 5 Define on which three things wavelength of emitted radiation 2
depends on?
327 5 Explain principle of Laser 4
328 5 Define semiconductor laser 1
329 5 Explain principle of semiconductor Laser 5
330 5 State advantages and disadvantages of semiconductor Laser 5
331 5 Write shortnote onSemiconductor Laser along with construction 7
and working
332 5 Calculate the wavelength of radiation emitted by an LED made up D 1 2.8 Å 4.3308 Å 5548.4 Å 4430.8 Å
of a semiconducting material with band gap energy 2.8eV

333 5 Direct Conversion Method is used in C 1 Solid laser Gas Laser Semi Liquid Laser
Conductor
Laser
334 5 Which one is a two-level laser _____ C 1 Ruby laser Helium-Neon Semiconductor Carbondioxide
laser laser laser
335 5 What is holography? 1
336 5 Explain holography in detail. 7
337 5 Describe how laser is used in LIDAR. 4
338 5 Write short note on: Laser cutting 5
339 5 Which of the following is used for the formation of holograms? D 1 X-ray Visible Light Infrared Lasers

340 5 The information in the hologram exists in ____ A 1 Interference Diffraction Interferometer Polarization

341 5 The applications of holography are ......... D 1 Data Storage Microscopy Used to all of them
determine
Young’s
modulus
of metallic
rods.
342 5 Holography was invented by ................... C 1 C.K.N.Patel Leith and Dennis Gabour Ali-Jawan
Upatnicks
343 6 Define fibre optic system. 1
Page 12 of 25
 L.J Institute of Engineering and Technology, Ahmedabad.
Physics Question Bank (SEM-I-2022 CE,IT,CSD,AIML,AIDS,CS&IT,CSE,CST,CEA,EC Engineering )
Note :
This question bank is only for reference purpose. LJU Test question paper may not be completely set from this question bank.
Sr Unit MCQ
No Number Question_Text Marks Option A Option B Option C Option D
Answer
344 6 What is communication? 1
345 6 Which of the following is the transmission frequency in optical D 1 1014 1011 1012 All of these
fibre?
346 6 Loss of signal in fibre optic cable occurs due to_______ D 1 Dispersion Attenuation Bending All of these
347 6 The bandwidth available with a single glass fibre is more C 1 100MHz 1000MHz 100 GHz 1000GHz
than_______
348 6 What is the predicted life span of fibre optic cables? B 1 10 to 15 years 20 to 30 years 5 to 10 years more than 30
years
349 6 Discuss the advantage of optical fibre communication system over 4
the conventional coaxial communication system
350 6 Discuss in detail the advantages of fibre optics cable over metallic 7
cable
351 6 Materials that cannot be used in the construction of fibre optic C 1 Glass Plastic Metals All of these
cables are_________
352 6 1. Fibre optic cables are resistant to spark hazards. C 1 Only 1 is true Only 2 is true Both are true Bothe are false
2. Fibre optic cables are corrosion resistant
353 6 Which of the following is not an advantage/s of fibre optic cable? D 1 Low cost Greater safety Extremely Cross talk
large
bandwidthg

354 6 Which of the following is not an advantage of fibre optic cable? D 1 Extremely Immunity to Elimination of Heavy weight
large electrostatic crosstalk
bandwidth interference
355 6 Unwanted transfer of signal between communication channels is C 1 Bandwidth Corrosion Crosstalk External Noise
called_______
356 6 The basic principle behind fibre optic communication is C 1 reflection refraction total internal diffraction
____________. reflection
357 6 State the working principle of fibre optics. Total 1
Internal
Reflectio
n
358 6 The conditions to be satisfied for Total Internal Reflection A 1 n1 > n2, ø>øc n1 < n2, ø> øc n1 > n2, ø< øc n1 < n2, ø< øc
is_________.
359 6 Give two conditions for TIR n1> n2 &ø 1
> øc
360 6 According to Snell's law, _______ B 1 n1/n2 = sin φ1 / n1/n2 = sin φ2 / n1/n2 = sin φ1 + n1/n2 = sin2 φ1
sin φ2 sin φ1 sin φ2 / sin2 φ2
361 6 State the main components of the optical fibre Core, 1
Cladding,
Buffer
jacket,
Kevlar,
Polyureth
ane
jacket
362 6 Total internal reflection occurs when a light ray travels from More 1
_______to ______. dense to
Less
dense
medium
363 6 Define total internal reflection 1
364 6 Can light propagate through a fibre optic cable with an angle of No 1
incidence at the entrance end greater than acceptance angle?

365 6 What is kevlar? 1

366 6 What is the purpose of cladding in fibre optic cable? 3
367 6 Explain construction of an Optical fibre. 3
368 6 Describe the construction of fibre optic cable 4
369 6 Discuss in detail the principle of optical fibre communication 5

370 6 Which layer gives tensile strength to the fibre? B 1 Buffer jacket Kevlar Polyurathane Cladding
jacket
371 6 How many protective layers does a fibre optic cable have? C 1 1 2 3 4
372 6 The light is propagated within the fiber core by the phenomenon A 1 total internal refraction at total internal change in the
reflection at core-cladding reflection at velocity of
core-cladding intersection the outer light within the
intersection surface of the fiber core
cladding
Page 13 of 25
 L.J Institute of Engineering and Technology, Ahmedabad.
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Note :
This question bank is only for reference purpose. LJU Test question paper may not be completely set from this question bank.
Sr Unit MCQ
No Number Question_Text Marks Option A Option B Option C Option D
Answer
373 6 Which layer helps in keeping the light inside the fibre? D 1 Buffer jacket Kevlar Polyurathane Cladding
jacket
374 6 Which among the following is described by the concept of A 1 Light collection Light Light Light
numerical aperture in an optical fibre? scattering dispersion polarisation
375 6 Define: Acceptance angle 1
376 6 Define Critical Angle in optical fibre 1
377 6 What do you mean by acceptance angle and numerical aperture of 3
a fibre?
378 6 What do you mean by acceptance angle and numerical aperture of 7
a fibre? Derive expression for them.
379 6 What is relative refractive index? Derive relation between 3
numerical aperture and relative refractive index.
380 6 The refractive indices of the core and the cladding materials are 3
1.55 and 1.51 respectively. Calculate the numerical aperture of the
optical fibre made from these materials.
381 6 A silica optical fibre has a core of refractive index 1.55 and a 3
cladding of refractive index 1.47. Determine (i) the critical angle at
the core-cladding interface (ii) the numerical aperture for the fibre
and (iii) the acceptance angle in the air for the fibre

382 6 A refractive index of core for step index fibre is 1.52, diameter is 3
2.9 μm and a fractional difference of refractive index is 0.0007. It
is operated at a wavelength of 1.3 μm. Find the number of modes
the fibre will support
383 6 Calculate the NA, the acceptance angle of the fibre having n1 3
=1.48 and n2 = 1.43.
384 6 An optical fibre core and its cladding have refractive indexes of 3
1.545 and1.495 respectively. Calculate the critical angle øc,
acceptance angle øin(max) and numerical aperture.
385 6 A step index fibre has a numerical aperture of 0.26, a core of 3
refractive index 1.5 and diameter of 100μm. Calculate
(i) the refractive index of the cladding,
(ii) the acceptance angle, and
(iii) the maximum number of modes with a wavelength of 1μm
that the fibre can carry.
386 6 A light ray enters from air to fibre. The refractive index of air is 1. 3
The refractive index of core is 1.5 (n1) and cladding is 1.48 (n2),
find: (i) the critical angle (ii) fractional refractive index
(iii)acceptance angle (iv) numerical aperture.
387 6 Calculate the refractive index of the core and cladding material of 3
an optical fibre with numerical aperture 0.11 and relative
refractive index difference 0.015.
388 6 Acceptance angle depends on________ D 1 Diameter of Material Diameter of Both A and B
core cladding
389 6 A step index fibre has a numerical aperture of 0.25, core diameter B 1 40.5 50.98 53.98 55.5
of 20 µm. Calculate the maximum number of modes with a
wavelength of 1.55 µm that the fibre can carry
390 6 What will be critical angle of a fibre with core refractive index of C 1 75o 74o 78o30’ 80o30’
1.48 and relative refractive index of 0.02?
391 6 What will be fractional refractive index of a fibre with numerical B 1 0.34 0.034 0.002 0.022
aperture of 0.4 and core of refractive index 1.52?
392 6 The maximum angle at which the light ray enters the fibre and is D 1 Incident angle Numerical Critical angle Acceptance
still totally internally reflected is called______ Aperture angle
393 6 State the types of the optical fibres Based of 1
Materials
Based on
Modes of
propagati
on
Based on
Index
profile

394 6 We prefer ______ fibre for short distance communication B 1 Single mode Multi mode Dual mode None of these

395 6 If light takes more than one path to propagate down the cable, it A 1 Multi mode Single mode Dual mode None of these
is called a ______fibre
Page 14 of 25
 L.J Institute of Engineering and Technology, Ahmedabad.
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Note :
This question bank is only for reference purpose. LJU Test question paper may not be completely set from this question bank.
Sr Unit MCQ
No Number Question_Text Marks Option A Option B Option C Option D
Answer
396 6 _______ fibre does not have a uniform refractive index A 1 Multimode Multimode Singlemode None of these
graded-index step-index step-index
fibre fibre fibre
397 6 Which of the following has more distortion? C 1 Singlemode Graded index Multimode None of these
step index step index
398 6 Multimode step index fibre has a large core diameter of range is A 1 100 to 300 μm 100 to 300 nm 100 to 300 100 to 300 cm
___________ mm
399 6 The performance characteristics of multimode graded index fibres A 1 Better than Same as Lesser than Negligible
is ___________ multimode multimode multimode
step index step index step index
fibre fibre fibre
400 6 What are the types of fibres on the basis of materials? Plastic 1
core with
plasctic
cladding
Glass
core with
plastic
cladding
Glass
core with
glass
cladding

401 6 What are the types of fibres on the basis of modes of Singlemo 1
propagation? de &
Multimod
e
402 6 What are the types of fibres on the basis of index profile? Step- 1
index &
Graded
index
403 6 What is V-number? Define it. 1
404 6 Distinguish between Singlemode and Multimode optical fibre 4

405 6 List the differences between step index and graded index optical 4
fibre.
406 6 What do you understand by index profile? List out the difference 4
between step and graded index fibre.
407 6 Classify the fibres on the basis of refractive index profile, on the 7
basis of modes of propagation and on the basis of materials

408 6 Explain the different types of fibres based on (i) material (ii) mode 7
and (iii) index profile
409 6 Explain the following configuration with diagrams (i) Multimode 7
Step-Index fibre (ii) Multimode Graded-Index fibre.

410 6 Explain in detail, the three major fibre configurations with 7

diagrams and applications.
411 6 Which type of fibre is not possible? D 1 Plastic fibre Glass fibre Plastic clad Silica clad
silica plastic
412 6 On the basis of modes of propagation and index profile, which B 1 Singlemode Singlemode Multimode Multimode
fibre is not possible? step index graded index step index graded index
413 6 No. of modes of propagation for a multimode graded index fibre A 1 Nstep/2 Ngraded/2 2Nstep Nstep/4
can be expressed as ______
414 6 Multimode graded index fibre has _______ bandwidth and C 1 High, low Low, low High, high Low high
_______ numerical aperture.
415 6 In case of multimode graded index fibre, pulse dispersion is D 1 More, less Less, more More, more Less, less
_______ and attenuation is _______.
416 6 Which one of the following types does not exist in optical fibres? B 1 single-mode single-mode multimode multimode
step index graded index step index graded index
417 6 Which of the following is true? A 1 Only i) is true Only ii) is true Only iii) is true All are true
(i)In singlemode fibre, light can propagate only in one mode
(ii) Coupling of light is easy in singlemode fibre
(iii) Multimode fibre is used for long haul communication
418 6 What is fibre optic communication link? 1
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Note :
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Sr Unit MCQ
No Number Question_Text Marks Option A Option B Option C Option D
Answer
419 6 What are the important components iof fibre optic Transmitt 1
communication link? er, fibre
optic
cable,
receiver
420 6 With a neat block diagram explain fibre optic communication link 5

421 6 Which of the following is not a component of the transmitter? D 1 Voltage to LED Source to fibre Amplifier
current coupler
converter
422 6 Which of the following is true? A 1 Only 1 is true Only 2 is true Both are true Both are false
1. The current to voltage converter transforms changes in detector
current to changes in output signal voltage
2. Amplifier is a part of transmitter
423 7 A semiconductor has generally ___________ valence electrons C 1 2 3 4 6

424 7 When a pure semiconductor is heated, its resistance __________ B 1 Increases Decreases Remains the Can't say
same
425 7 The strength of a semiconductor crystal comes from ________ C 1 Forces Forces Electron-pair
None of these
between between bonds
nuclei protons
426 7 When a pentavalent impurity is added to a pure semiconductor, it D 1 Insulator Intrinsic P-type N-type
becomes_______ semiconductor semiconductor semiconductor

427 7 Addition of pentavalent impurity to a semiconductor creates A 1 Free electrons Holes Bound Valence
many______ electrons electrons
428 7 An n-type semiconductor is______ C 1 Positivel Negatively Eelectrically None of these
charged charged neutral
429 7 Addition of trivalent impurity to a semiconductor creates B 1 Free electrons Holes Bound Valence
many_______ electrons electrons
430 7 As the doping to a pure semiconductor increases, the bulk C 1 Increases Remains the Decreases Can't say
resistance of the semiconductor same
431 7 A semiconductor is formed by_________ bonds. C 1 Coordinate Electrovalent Covalent None of these

432 7 A semiconductor has __________ temperature coefficient of C 1 Positive Zero Negative Can’t say
resistance.
433 7 In an N-type silicon, which of the following statement is true? D 1 Electrons are Electrons are Holes are Holes are
majority minority majority minority
carriers and carriers and carriers and carriers and
trivalent pentavalent trivalent pentavalent
atoms are the atoms are the atoms are the atoms are the
dopants dopants dopants dopants
434 7 In an P-type silicon, which of the following statement is true: C 1 Electrons are Electrons are Holes are Holes are
majority minority majority minority
carriers and carriers and carriers and carriers and
trivalent pentavalent trivalent pentavalent
atoms are the atoms are the atoms are the atoms are the
dopants dopants dopants dopants
435 7 How does a semiconductor behave at absolute zero? B 1 Conductor Insulator Semiconductor Protection
device
436 7 What are the charge carriers in semiconductors? A 1 Electrons and Only electrons Only holes Charges
holes
437 7 What type of material is obtained when an intrinsic semiconductor A 1 N-type P-type Conductor Insulator
is doped with pentavalent impurity? semiconductor semiconductor

438 7 What type of material is obtained when an intrinsic semiconductor B 1 N-type P-type Conductor Insulator
is doped with trivalent impurity? semiconductor semiconductor

439 7 What is a hole in a semiconductor? 1

440 7 Explain why does a pure semiconductor behave like an insulator at 3
room temperature?
441 7 What are donor and acceptor impurities? Give examples 3
442 7 Classify semiconductors on the basis of different characteristics 4

443 7 Discuss properties of semiconductors. 4

444 7 Explain intrinsic and extrinsic semiconductors with examples. 5
445 7 Differentiate between intrinsic and extrinsic semiconductors. 4
446 7 Differentiate between P-type and N-type semiconductors. 4

Page 16 of 25
 L.J Institute of Engineering and Technology, Ahmedabad.
Physics Question Bank (SEM-I-2022 CE,IT,CSD,AIML,AIDS,CS&IT,CSE,CST,CEA,EC Engineering )
Note :
This question bank is only for reference purpose. LJU Test question paper may not be completely set from this question bank.
Sr Unit MCQ
No Number Question_Text Marks Option A Option B Option C Option D
Answer
447 7 In an intrinsic semiconductor, the mobility of electrons in the C 1 Less than the zero Greater than None of these
conduction band is_________ mobility of the mobility of
holes in the holes in the
valence band valence band

448 7 For N- type semiconductor, ______ C 1 Trivalent Electrons are Holes are Acceptor level
impurities are minority minority is close to
added conduction
band

449 7 For P- type semiconductor, ______ A 1 Trivalent Electrons are Holes are Donor level is
impurities are majority minority close to
added valence band
450 7 Which of the following is not a property of semiconductor? B 1 Usually high Non-metallic Both electrons They have
resistivity in nature and holes are negative
charge carrier temperature
coefficient of
resistance
451 7 Semiconductors are not classified on the basis of___________ B 1 Energy Electrons and Constitution Purity
bandgap holes
452 7 For a semiconductor, at 0 K, the valence band is_______________ B 1 Completely Completely Partially filled Does not exist
empty filled
453 7 Derive an expression for density of holes in valence band of an 7
Intrinsic semiconductor.
454 7 Derive an expression for density of electrons in conduction band 7
of an Intrinsic semiconductor.
455 7 Explain the variation of Fermi level with temperature for an 5
intrinsic semiconductor.
456 7 What is law of mass action? Explain 4
457 7 Derive an expression for conductivity of intrinsic semiconductor. 4
Also brief, on what factors it depends.
458 7 For intrinsic silicon the room temperature electrical conductivity is 3
-4 -1 -1
4x10 Ω m .The electron and hole mobilities are 0.14 and 0.040
m-2V-1S-1 respectively Compute electron and hole concentrations
at room temperature.
459 7 For intrinsic carrier density at room temperature in Ge is 3
19 2 -1 -1
2.37x10 , electrons and hole mobilities are 0.38 and 0.18 m V S
respectively. Calculate its resistivity.
460 7 The electron and hole mobilities in In-Sb semiconductor are band 3
6 and 0.2 m2V-1S-1. At room temperature the resistivity of In-Sb is
2x10-4Ωm. Assuming material is intrinsic determine carrier density
at room temperature.
461 7 Suppose that effective mass of holes in a material is 4 times the 3
mass of electrons. At what temperature would Fermi level be
shifted by 10% from the middle of forbidden energy gap. Given
Eg= 1eV.
462 7 Find the resistance of an intrinsic Ge rod 1 cm long. 1 mm wide 3
19 3 2 -1
and 1 mm thick at 300 K. For Ge, ni = 2.5 *10 /m , µh = 0.39 m V
-1 2 -1 -1.
s and µh = 0.19 m V S
463 7 At 20oC, conductivity of Ge is 2 Ω-1 m-1. Find the conductivity of Ge 4
at 40oC. Band gap is given as 0.72eV.
464 7 The conductivity of a semiconductor at 20oC is 250Ω-1 m- 1 and at 4
100oC is 1100Ω-1 m-1. Find the band gap energy.
465 7 If the drift velocity of holes under a field gradient of 100 V/m is A 1 0.05 0.55 500 None of these
5m/sec, the mobility(in SI unit) is_________
466 7 The conductivity of the intrinsic germanium is ________. When ni C 1 0.224 (Ωcm)-1 0.0224 (Ωcm)-1 2.24 (Ωcm)-1 0.00224 (Ωcm)-
at 300 oK is 2.5 x 1013 /cm3, and µe and µh in germanium are 1

3800 cm2/VSec and 1800 cm2/VSec respectively.

467 7 The law of mass action is______ B 1 ni2 < ne nh ni2 = ne nh ni2 > ne nh ni = ne nh
468 7 Indirect recombination is also known as______ A 1 Phonon Photon Auger None of these
transition transition recombination

Page 17 of 25
 L.J Institute of Engineering and Technology, Ahmedabad.
Physics Question Bank (SEM-I-2022 CE,IT,CSD,AIML,AIDS,CS&IT,CSE,CST,CEA,EC Engineering )
Note :
This question bank is only for reference purpose. LJU Test question paper may not be completely set from this question bank.
Sr Unit MCQ
No Number Question_Text Marks Option A Option B Option C Option D
Answer
469 7 Recombination process in InGaAs is in the form of _________ B 1 Photons Phonons Transferred to None of these
third electron

470 7 Recombination in GaAsP is in the form of _________ A 1 Photons Phonons Transferred to None of these
third electron

471 7 The process where EHP is formed is called _______________ A 1 Carrier Carrier Carrier None of these
generation diffusion recombination

472 7 ______________ is a process where EHP are annihilated C 1 Carrier Carrier Carrier None of these
generation diffusion recombination

473 7 Which process dominates in case of low carrier concentration? C 1 Phonon Photon Carrier None of these
transition transition generation
474 7 What do you mean by Carrier generation and Recombination? 3

475 7 What do you mean by Trap-assisted transition? Why is it non- 4

radiative?
476 7 Write a short note on direct recombination. Why is called band-to- 4
band transition?
477 7 Drift current is due to ___________ D 1 Random Random Recombinatio Applied
motion of motion of n of holes and electric field
electrons holes electrons
478 7 What makes up the total current in a semi-conductor? C 1 Only diffusion Only drift Drift+diffusion Drift+diffusion
current current current current+biasin
g current

479 7 Diffusion current is due to ___________ C 1 Random Random Variation in Applied

motion of motion of carrier electric field
electrons holes concentration

480 7 Why does a gradient occur in a semi-conductor? D 1 Because of Because of Because of Because of
current flow diffusion drift current difference in
current concentrations

481 7 Write a short note on Drift current. 5

482 7 What do you mean by Diffusion current? Explain. 5
483 7 Which is/are the true statement/s for diffusion current? D 1 only 1 only 2 only 3 All are correct
1.current produced due to the motion of charge carriers from a
region of higher concentration to a region of lower concentration.
2.The diffusion process occurs in non-uniformly doped
semiconductors.
3.The diffusion current occurs without an external voltage.

484 7 Which is correct for drift current? C 1 Only (i) is true Only (ii) is true Only (iii) is All are correct
___________ true
(i) Formed due to diffusion of charge carriers.
(ii) Exists even when there is no bias.
(iii) Has charge carriers.
485 7 Differentiate between drift and diffusion currents in 5
semiconductors. Which is more present in semiconductors?
486 7 In the Hall Effect, the directions of electric field and magnetic field B 1 Parallel Perpendicular Opposite None of these
are ________ to each other.
487 7 Which of the following parameters can’t be found with Hall Effect? C 1 Polarity Conductivity Area of device Carrier
concentration

488 7 Define Hall effect. 1

489 7 Define Hall coefficient. 1
490 7 Choose correct Lorentz force equation in hall effect D 1 F = qeB F = qsB F = qlB F = qvB
491 7 Explain Hall effect with suitable diagram. 3
492 7 What is Hall voltage? Derive its expression. 5
493 7 What is Hall coefficient? Explain how is it related to Hall voltage? 3

Page 18 of 25
 L.J Institute of Engineering and Technology, Ahmedabad.
Physics Question Bank (SEM-I-2022 CE,IT,CSD,AIML,AIDS,CS&IT,CSE,CST,CEA,EC Engineering )
Note :
This question bank is only for reference purpose. LJU Test question paper may not be completely set from this question bank.
Sr Unit MCQ
No Number Question_Text Marks Option A Option B Option C Option D
Answer
494 7 A semiconductor crystal 12mm long, 1mm wide and 1mm thick 4
has a magnetic flux density of 0.5 Wb /m2, applied from to back,
and is perpendicular to largest faces. When a current of 20 mA
flows lengthwise through the specimen, the voltage measured
across its width is found to be 37µV. What is the Hall coefficient of
semiconductor and the density of charge carrier?

495 7 2.0 cm wide and 1.0 mm thick copper strip is placed in a magnetic 4
field 1.5Wb/m2 perpendicular to the strip. Suppose a current of
200A is set up in the strip what will be the Hall potential appeared
across the strip? (n=8.4x1028 electrons /m3).

496 7 When a charged particle such as an electron is placed in a C 1 Tensile force Fleming force Lorentz force Shockley Reed
magnetic field, it experiences a _____________ proportional to force
the strength of the field and velocity at which it is travelling
through it.
497 7 The Hall voltage is given by ________ D 1
498 8 In a PN junction with no external voltage, the electric field B 1 Peak Barrier Threshold Path
between acceptor and donor ion is called ______
499 8 For a PN junction diode, the current in reverse bias may be in D 1 Few Between 0.2 A Few amperes Few micro or
______ milliamperes and 15 A nano amperes

500 8 When a PN junction is reverse biased______ C 1 Holes and The barrier Holes and None of these
electrons tend tends to break electrons tend
to concentrate down to move away
towards the from the
junction junction

501 8 In an unbiased PN junction, _______ B 1 The junction The junction The junction The junction
current is due current at current current at
to minority equilibrium is reduces with equilibrium is
carriers only zero as equal rise in zero as
but opposite temperature charges do not
carriers are cross the
crossing the junction
junction
502 8 In a PN junction when the applied voltage overcomes the ........ D 1 Depletion, Reverse, Resistance, Barrier,
potential, the diode current is large, which is known as ............. negative bias reverse bias reverse bias forward bias

503 8 A PN junction _____ C 1 Has low Has high Conducts in Conducts in

resistance in resistance in forward reverse
forward as forward as direction only direction only
well as reverse well as reverse
directions directions

504 8 What is meant by potential barrier across a p-n junction? How is it 3

formed?
505 8 Explain what is zero bias of a PN Junction diode? 4
506 8 What do you mean by external bias of a PN Junction diode? 7
Explain forward and reverse bias of a PN Junction diode.
507 8 Define: a) Depletion layer b) Threshold voltage c) Leakage current 3

508 8 What do you mean by V-I characteristics of a PN Junction diode? 7

Explain both the cases with the help of suitable diagrams.

509 8 Briefly discuss some applications of PN Junction diode. 3

510 8 When a forward bias is applied to a p-n junction, it______ C 1 raises the reduces the lowers the None of the
potential majority potential above.
barrier. carrier current barrier
to zero

511 8 In an unbiased PN Junction, holes diffuse from P region to N region C 1 free electrons they move hole All of these
because_____ in the n-region across the concentration
attract them junction by the in p-region is
potential more as
difference. compared to n-
region

Page 19 of 25
 L.J Institute of Engineering and Technology, Ahmedabad.
Physics Question Bank (SEM-I-2022 CE,IT,CSD,AIML,AIDS,CS&IT,CSE,CST,CEA,EC Engineering )
Note :
This question bank is only for reference purpose. LJU Test question paper may not be completely set from this question bank.
Sr Unit MCQ
No Number Question_Text Marks Option A Option B Option C Option D
Answer
512 8 When a PN Junction diode is reverse biased, what causes current C 1 Diffusion of Nature of Drift of Bothe drift
across the junction? charges material charges and diffusion
of charges
513 8 In the forward bias arrangements of a PN junction diode B 1 The N end is The P end is The direction The P end is
connected to connected to of the current connected to
the positive the positive is from N end the negative
terminal of the terminal of the to the P end in terminal of the
battery battery the diode battery
514 8 The electrical resistance of the depletion layer is large because A 1 It has no It has a large It contains It has holes as
change number of electrons as charge carriers
carriers charge carriers charge carriers

515 8 On increasing the reverse bias to a large value in a PN junction C 1 Increases Remains fixed Suddenly Decreases
diode, current slowly increases slowly
516 8 The reverse current in a diode is of the order of _______ C 1 kA mA μA A
517 8 Which of the following is true in case of the unbiased p-n junction? A 1 The high The high p and n both Undetermined
potential at n- potential at p- are at the
side and low side and low same potential
potential at p- potential at n-
side side
518 8 Junction current in an unbiased p-n junction at equilibrium C 1 Because of Because of Zero as equal Zero as no
is__________. diffusion of diffusion of and Opposite Charge carriers
minority majority Charge carriers across the
carriers carriers across the junction.
junction

519 8 Reversed bias p-n junction resistance has resistance C 1 in the Order of in the Order of in the Order of None of these
of____________. Ω kΩ MΩ
520 8 A simple PN junction diode is fabricated using ____________ D 1 Intrinsic, Extrinsic, Intrinsic, Extrinsic,
semiconductor and can be used as_______ Bidirectional Bidirectional unidirectional unidirectional
switch switch switch switch
521 8 Which of the following is/are true statements for PN junction D 1 Only Statement 1 & Statement 2 & All statements
diode? statement- 1 is 2 are true 3 are true are true
1. In equilibrium condition, the fermi level in p-type is close to the true
valance band and in n-type is close to conduction band.
2. During forward bias fermi level rises by a factor eV.
3. During reverse bias fermi level shifted down by a factor eV.

522 8 The fermi level of a PN Junction diode in equilibrium is______ C 1 Close to Close to Aligned in None of these
Conduction Valence band centre
band
523 8 What happens to Fermi level when the PN Junction diode is B 1 Moves Moves Aligned in None of these
forward biased? towards towards centre
Valence band Conduction
band
524 8 Explain the energy band digram of PN Junction diode in zero bias 3

525 8 Explain forward and reverse bias of PN Junction diode with the 7
help of Energy band diagram.
526 8 The breakdown mechanism in a lightly doped PN Junction diode is B 1 Zener Avalanche High voltage Tunneling
called________ breakdown breakdown breakdown
527 8 The breakdown mechanism that occurs in a narrow junction diode A 1 Zener Avalanche Reverse Tunneling
is called________ breakdown breakdown breakdown
528 8 Zener breakdown occurs _____ B 1 mostly in due to very in lightly due to
germanium strong electric doped diodes thermally
diodes field generated
minority
carriers
529 8 Avalanche breakdown primarily depends on the phenomenon A 1 collision doping ionization recombination
of_____
530 8 Avalanche breakdown occurs _____ A 1 due to due to very in heavily Both B & C
thermally strong electric doped diodes
generated field
minority
carriers
531 8 Zener breakdown is________ D 1 gradual exponential linear sudden

Page 20 of 25
 L.J Institute of Engineering and Technology, Ahmedabad.
Physics Question Bank (SEM-I-2022 CE,IT,CSD,AIML,AIDS,CS&IT,CSE,CST,CEA,EC Engineering )
Note :
This question bank is only for reference purpose. LJU Test question paper may not be completely set from this question bank.
Sr Unit MCQ
No Number Question_Text Marks Option A Option B Option C Option D
Answer
532 8 How is the breakdown region set during the manufacturing of the B 1 By controlling By controlling By managing All of the
diode? the size of the the doping of the biasing of above
diode the diode diode
533 8 Write a shortnote on Avalanche breakdown 5
534 8 What is Zener breakdown? How does it occur? Explain 5
535 8 Which one of the following breakdown voltages is directly A 1 Avalanche Zener Both a and b None of these
proportional to the temperature?
536 8 Zener diode is used as a_________ D 1 Rectifier Amplifier Switch Voltage
regulator
537 8 A zener diode when biased correctly _________ C 1 Acts as a fixed Never Has a constant Has a constant
resistance overheats voltage across current
it passing
through it

538 8 Zener diode is designed to specifically work in which region B 1 Active region Breakdown Forward bias Reverse bias
without getting damaged? region
539 8 What is the level of doping in Zener Diode? B 1 Lightly Doped Heavily Doped Moderately No doping
doped
540 8 The depletion region of the Zener diode is ____________ C 1 Thick Normal Very thin Very thick
541 8 How is the depletion layer of a zener diode? Why does it have a 3
very strong electric field? Explain
542 8 What is a zener diode? Explain its construction and working. 7
543 8 In the breakdown region, a zener diode behaves like a _______ A 1 Constant Constant Constant None of the
source voltage current resistance above
544 8 A zener diode is a _______ device A 1 Non linear Linear Amplifying None of the
above
545 8 Discuss some applications of Zener diode 3
546 8 A Zener diode with a high breakdown voltage has______ A 1 Lightly doped P or N is lightly Heavily doped None of these
P and N doped P and N

547 8 In a Zener diode,______ C 1 Negative Forward Sharp All of the

resistance voltage rating breakdown above
characteristic is high occurs at a low
exists reverse
voltage
548 8 A Zener diode works on the principle of ___________ A 1 tunnelling of thermionic diffusion of hopping of
charge carriers emission charge carriers charge carriers
across the across the across the
junction junction junction

549 9 EHP is generated in LED by_________ A 1 Electric Radiation High energy None of these
current electrons
550 9 LED operates in __________ C 1 Zero bias Reverse bias Forward bias None of these

551 9 Which process of the Electron-hole pair is responsible for emitting C 1 Generation Diffusion Recombinatio None of these
of light? n
552 9 When forward biased, LED emits light because of _________ A 1 Recombinatio Light Light produced All of the
n of carriers generated in by collisions above reasons
breaking the
covalent
bonds
553 9 Which of the following materials can be used to produce infrared B 1 Si GaAs CdS PbS
LED?
554 9 Which of the following is not a characteristic of LED? B 1 Fast action High Warm-up Low Long life
time operational
voltage
555 9 The colour of emitted light from LED depends on __________ C 1 Physical No. of Type of No. of
dimensions of available semiconductor recombination
LED carriers materials used s taking place

556 9 The advantage of LED is ________ D 1 Long life Fast on-off Low operating All of the
switching voltage above

557 9 Explain the working principle of an LED with suitable diagram. 3

558 9 What is an LED? Explain its construction and working with the help 7
of suitable diagrams.
559 9 Why is LED more efficient than conventional light? Also discuss 4
some advantages of LED.
Page 21 of 25
 L.J Institute of Engineering and Technology, Ahmedabad.
Physics Question Bank (SEM-I-2022 CE,IT,CSD,AIML,AIDS,CS&IT,CSE,CST,CEA,EC Engineering )
Note :
This question bank is only for reference purpose. LJU Test question paper may not be completely set from this question bank.
Sr Unit MCQ
No Number Question_Text Marks Option A Option B Option C Option D
Answer
560 9 List down some applications of LED 3
561 9 Which of the following material can be used to produce infrared B 1 Si GaAs CdS PbS
led?
562 9 Working Principle of LED is__________. B 1 Photoconducti Electrolumines Photo None of these
vity cence resistivity
563 9 What is the full form of the LDR Sensor? D 1 Lithium Diode Light Lithium Disk Light
Resistor Diaphragm Resistor Dependent
Resistor Resistor
564 9 What is the use of the LDR Sensor? C 1 Monitors Monitors air Monitors Light Monitors
Motion pressure Intensity current

565 9 How many pins are present in the LDR Sensor? B 1 1 2 3 4

566 9 Which one of the following materials can be used for making an A 1 Lead Sulfide Pure Iron ore Aluminium
LDR? Aluminium oxide
567 9 In darkness, the LDR has _______ D 1 High current Low resistance Both A and B High
resistance
568 9 What will be resistance of LDR if light intensity increases? B 1 Increase Decreases Remains same Becomes
infinity
569 9 Explain the working principle of LDR. 3
570 9 What materials are used in construction of LDR? Also explain its 7
construction and working.
571 9 Group -I list four types of diodes. Match each diode in Group-I B 1 P-2, Q-1, R-1, S- P-2, Q-2, R-1, S- P-2, Q-2, R-2, S- P-2, Q-2, R-1, S-
with one of the options in Group II to indicate the bias condition of 2 2 2 1
that device in its normal mode of operation.
Group -IGroup-II
P. Zener diode1. Forward bias
Q. LDR2. Reverse bias
R. LED
S. Photo diode
572 9 EHP is generated in photodiode by__________ B 1 Electric Radiation High energy None of these
current electrons
573 9 The leakage current in photodiode is called ______ C 1 Photocurrent Forward Dark current None of these
current
574 9 When light increases, the reverse minority current in a photodiode A 1 Increases Decreases Is unaffected Changes
________ direction
575 9 A photodiode is normally ______ B 1 Forward Reverser Neither A light emitter
biased biased forward nor
reverse biased

576 9 On what principle does a photodiode work? Explain it briefly. 3

577 9 Explain the construction and working of a Photodiode. 7

578 9 Briefly discuss some applications of a photodiode. 3
579 9 When the source of light is not sun light then the photo voltaic cell C 1 Photodiode Photovoltaic Photo Photo
is used as_________ cell detector transmitter
580 9 Photodiode sensor is operated in ______ mode D 1 Photovoltaic Photoconducti Zero bias All of these
ve
581 9 The active diameter of photodiode is about __________mm. C 1 150 50 25 5
582 9 The photodiode can turn its current ON and OFF in ________ B 1 Milli Nano Micro Both a and c
seconds.
583 9 _______ current is the leakage current that flows through a photo A 1 Leakage Dark Saturation Detection
diode with no input used in as light detectors.0.5 eV
584 9 Photodiode is _________ D 1 A light emitter Is a passive Can sense only Operated in
device visible light reverse bias

585 9 Which type of material is used in construction of Photodiode? A 1 InAsSb GaP AlGaP CIGS

586 9 A solar cell converts light energy into __________ A 1 Electrical Thermal Light energy None of these
energy energy
587 9 Solar cell works on the principle of _______ A 1 Photovoltaic Photoelectric Photo None of these
effect effect conductive
effect
588 9 Solar cells are mainly made of______ A 1 Silicon Germanium Gallium Cadmium
arsenide sulphide
589 9 The solar or photo voltaic cell converts_________ B 1 Chemical Solar radiation Solar radiation Thermal
energy to into electrical into thermal energy into
electrical energy energy electrical
energy energy
Page 22 of 25
 L.J Institute of Engineering and Technology, Ahmedabad.
Physics Question Bank (SEM-I-2022 CE,IT,CSD,AIML,AIDS,CS&IT,CSE,CST,CEA,EC Engineering )
Note :
This question bank is only for reference purpose. LJU Test question paper may not be completely set from this question bank.
Sr Unit MCQ
No Number Question_Text Marks Option A Option B Option C Option D
Answer
590 9 A solar cell is a PN Junction operating in______ C 1 Reverse bias Forward bias Unbiased In both
condition condition condition forward and
reverse
condition
591 9 What is the difference between Photodiode and Solar cell? B 1 No External No External Larger surface No difference
Bias in Bias in Solar area in
Photodiode cell photodiode

592 9 Which of the following should not be a characteristic of a solar cell C 1 High High High Energy High
material? Absorption Conductivity Band Availability
593 9 Full form of FF in the solar cell is ____________ B 1 Face factor Fill factor Form factor None of these

594 9 What is Photovoltaic effect? Explain briefly with a diagram. 3

595 9 What is a solar cell? Explain its construction and working. 7
596 9 Explain the parameters of a solar cell and discuss about its 5
efficiency.
597 9 What are optical losses in a solar cell? Suggest some remedies for 5
the same.
598 9 List down some merits and demerits of a solar cell 4
599 9 Briefly discuss some applications of solar cell. 5
600 9 What should be the band gap of the semiconductors to be used as C 1 0.5eV 1 eV 1.5 eV 1.9 eV
solar cell materials?
601 9 Group -I list four types of diodes. Match each diode in Group-I B 1 P-3, Q-2, R-4, S- P-3, Q-2, R-1, S- P-2, Q-3, R-4, S- P-2, Q-3, R-1, S-
with one of the options in Group II to indicate the working 1 4: Answer 1 4
principle of that device.
Group -IGroup-II
P. Solar cell1. Electroluminescence.
Q. LDR2. photoconductivity
R. LED3. photovoltaic effect.
S. Photo diode4. photoelectric effect
602 9 If the work function of a metal is less than the semiconductor it is B 1 Schottky Ohmic rectifying both a and c
a ______ junction.
603 9 Which of the below mentioned statements is false regarding C 1 Schottky There is no The majority Schottky
Schottky diodes? diodes have a storage of charge carriers diodes can be
Al-Silicon charges in a in a Schottky switched off
junction Schottky diode diode are faster than a p-
holes n junction
diode of the
same rating
604 9 Which of the following are/is the majority charge carriers in a B 1 Holes Electrons Both holes & None of these
Schottky diode? Electrons carry
equal current

605 9 In a Schottky diode, the silcon is usually __________ A 1 N-type P-type Undoped Silicon is not
used
606 9 As compared to a p-n junction diode(of the same rating), a C 1 Higher cut-in Lower reverse Higher Higher
Schottky diode has ___________ voltage leakage operating switching time
current frequency
607 9 Diodes used primarily in high frequency devices and fast switching B 1 Current Schottky PIN diodes Zener diodes
applications are called _________ regulating diodes
diodes
608 9 What is a Schottky junction? Explain how is it formed? 4
609 9 Explain the forward and reverse biasing of a Schottky junction. 7

610 9 What is a Ohmic junction? Explain how is it formed? 4

611 9 Write a short note on Schottky diode. Also list down some of its 7
applications.
612 9 Diodes formed by joining a doped semiconductor region with a B 1 LED Schottky didoe LDR Zener
metal such as gold, silver, Platinum is
613 10 Area A of a uniform slab can be given as ____________ A 1 t*W t/W L*W L*t
614 10 What is the sheet resistance of the conducting material? C 1 RS = RS = RS = None of these
resistivity/leng resistivity/widt resistivity/thic
th h kness
615 10 Sheet resistance of a semiconductor is ___________ B 1 An inherent a function of also called as All of the
property of thickness of Specific mentioned
the material the material Resistance

Page 23 of 25
 L.J Institute of Engineering and Technology, Ahmedabad.
Physics Question Bank (SEM-I-2022 CE,IT,CSD,AIML,AIDS,CS&IT,CSE,CST,CEA,EC Engineering )
Note :
This question bank is only for reference purpose. LJU Test question paper may not be completely set from this question bank.
Sr Unit MCQ
No Number Question_Text Marks Option A Option B Option C Option D
Answer
616 10 Sheet resistance of semiconductor is directly measured using C 1 Ohmmeter Non-contact Four probe Any of the
___________ eddy current method three
based testing
device
617 10 Unit of sheet resistance is_____ C 1 Ω/m Ω*m Ω/square Ω*square
618 10 ____ shows the ability to travel charge along thin films in C 1 Conductor Specimen Sheet Module
conductor and semiconductor. resistance resistance resistance resistance
619 10 Which parameter(s) can be determined from sheet resistance? C 1 Resistivity Conductivity Both A and B None of these

620 10 Which measuring instruments are use in Four Probe method? C 1 Ammeter and Ammeter only Voltmeter None of these
Voltmeter only
621 10 In Four Probe method, for bulk material hemisphere area B 1 2πr^2 2πx^2 2πr 2π^2x
considered as____
622 10 Four Probe method use for measuring _________ D 1 Capacitance Inductance Resistance Impedance
623 10 Identify application which is not suitable with Four Probe method. D 1 Remote Fuel cell Resistance Inductance
sensing area bipolar plate thermometers controlling

624 10 A requirement of four point probe method of determining A 1 Current must Current is not Cross-section Current source
resistivity is be constant constant along the is connected
sample is between inner
constant two probes

625 10 What is the benefit of using Four probe method over Two probe 3
method?
626 10 Discuss the Four probe method for measuring sheet resistance of 5
Bulk sample.
627 10 Discuss the Four probe method for measuring sheet resistance of 5
Thin sheet.
628 10 What are the merits and demerits of Four probe method? Also list 4
down some applications of this method.
629 10 In the four-point probe method of determining resistivity A 1 current source voltage source Current is not impedance of
is connected is connected constant voltmeter is
to the two to the two low
outer probes outer probes

630 10 In Four Probe method, for thin material circumference area is D 1 2πb 2πd 2πl 2πt
considered as____
631 10 ______ shows ability to travel charge along thin films in conductor A 1 Sheet Conductor Module Specimen
and semiconductor resistance resistance resistance resistance
632 10 Vander Pauw measurement use for _____measurement. A 1 Resistivity Inductance Capacitance Conductance
633 10 Which of the following parameters can't be measured by Van der D 1 Resistivity Doping type Carrier Conductance
Pauw method? concentration

634 10 Identify the condition which is not applicable during Vander Pauw C 1 Homogeneous Less thickness Less Uniform
measurement. sample capacitance thickness
635 10 What are the conditions to be satisfied while using Van der 3
method?
636 10 Write a short note on Van der Pauw method for resistivity 7
measurement.
637 10 Explain Hall measurements of Van der Pauw method. 7
638 10 Discuss the advantages and disadvantages of Van der Pauw 4
method.
639 10 In Van Der Pauw method, the average diameter (D) of the B 1 equal much smaller greater than None of these
contacts and sample thickness must be ___________ the distance than
between the contacts
640 10 Identify condition which is not applicable during Vander Pauw C 1 Homogeneous less thickness less Uniform
measurement sample capacitance thickness
641 10 Identify property which cannot be justified by Vander Pauw B 1 Doping Material width Carrier density Mobility of
measurement method of majority charge carrier
charge carrier

642 10 Which is the advantage of Van der Pauw method? A 1 Only (i) is true Only (ii) is true Both are true Both are false
(i) Very low resistance values can be measured.
(ii) It is a quick method.
643 10 In Hot probe method, if the carriers are positive, the current flows B 1 Same Opposite Both A and B None of these
in _______ direction.
644 10 In Hot point probe measurement if hot side is negative, the A 1 P-type N-type Not doped Can't say
sample is ___type
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 L.J Institute of Engineering and Technology, Ahmedabad.
Physics Question Bank (SEM-I-2022 CE,IT,CSD,AIML,AIDS,CS&IT,CSE,CST,CEA,EC Engineering )
Note :
This question bank is only for reference purpose. LJU Test question paper may not be completely set from this question bank.
Sr Unit MCQ
No Number Question_Text Marks Option A Option B Option C Option D
Answer
645 10 How many contacts are needed in Hot probe method? B 1 1 2 3 4
646 10 Which method is used to determine whether the sample is P type B 1 Cold point Hot point Wide point Area point
or N type? probe probe probe probe
measurement measurement measurement measurement
647 10 Why we use Hot point probe measurement? D 1 For For For Whether a
measurement measurement measurement semiconductor
of Capacitance of of resistance sample is n-
Conductance type or p-type
648 10 Explain the Hot probe method for finding the doping type, with 5
suitable diagrams.

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