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Poori Padhai: B. Tech

1. The document is a theory examination for a B. Tech course covering emerging domains in electronics engineering. It contains 7 sections with a total of 100 marks. 2. Section A contains 10 short answer questions worth 2 marks each covering topics like doping, modulation, diode characteristics, microprocessor vs microcontroller, rectifier circuits, FET vs BJT, and more. 3. Section B contains 5 long answer questions worth 10 marks each involving circuit analysis and explanations of rectifiers, voltage doublers, LCDs, transistor characteristics, and more. 4. Sections C-F contain additional long answer questions involving circuit analysis, op-amps, Boolean logic, communication systems, and universal gates

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Brijesh Yadav
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102 views6 pages

Poori Padhai: B. Tech

1. The document is a theory examination for a B. Tech course covering emerging domains in electronics engineering. It contains 7 sections with a total of 100 marks. 2. Section A contains 10 short answer questions worth 2 marks each covering topics like doping, modulation, diode characteristics, microprocessor vs microcontroller, rectifier circuits, FET vs BJT, and more. 3. Section B contains 5 long answer questions worth 10 marks each involving circuit analysis and explanations of rectifiers, voltage doublers, LCDs, transistor characteristics, and more. 4. Sections C-F contain additional long answer questions involving circuit analysis, op-amps, Boolean logic, communication systems, and universal gates

Uploaded by

Brijesh Yadav
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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B. TECH.

(SEM I) THEORY EXAMINATION 2020-21


EMERGING DOMAIN IN ELECTRONICS ENGINEERING
Time: 3 Hours Total Marks: 100
Note: 1. Attempt all Sections. If require any missing data; then choose suitably.

SECTION A
1. Attempt all questions in brief. 2 x 10 = 20
Q no. Question Marks CO
a. What do you mean by the term doping? Why it is required? 2 1
b. List any two advantages of modulation. 2 3
c. Evaluate: (637)9 = (?)5 2 2
d. Draw the VI characteristics of an ideal diode in forward and reverse bias 2 2
conditions.
e. State two differences between microprocessor and microcontroller. 2 3
f. Why bridge type full wave rectifier is preferred over center tapped full 2 1
wave rectifier. State two reasons.

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g. State two differences between FET and BJT. ha 2 4
h. Differentiate between avalanche and zener breakdown. 2 1
i. Find 1’s and 2’s complement of : 1101001 2 2
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j. State the basic difference between Bluetooth and Wi-Fi technology. 2 2


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SECTION B
2. Attempt any three of the following:
Q no. Question Marks CO
or

a. (i) With help of neat circuit diagrams, explain the working of a full 6+4 3
wave bridge rectifier.
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(ii) Define the term ripple factor. What is the value of the ripple
factor for a half wave rectifier and a full wave rectifier?
b. (i) With help of a neat diagram, explain the working of a voltage 6+4 3
doubler circuit.
(ii) Write a short note on varactor diode.
c. For the circuit shown below, determine the value of maximum and 10 4
minimum zener diode current.

d. (i) What are liquid crystal displays? Explain their working with help 3+7 4
of a neat diagram.
(ii) Determine the output waveform of the following circuit,

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e. (i) Determine the output waveform of the following circuit, by 6+4 5
presenting all the necessary calculations which have been done to
determine this output.

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(ii) Derive the relationship between current amplification factor for
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Common Emitter and Common Base configuration of a bipolar junction
transistor.
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SECTION C
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3. Attempt any one part of the following:


Q no. Question Marks CO
a. Describe the construction of a npn bipolar junction transistor. Draw well 3+5+ 4
or

labeled input and output characteristics of a npn transistor in Common 2


Emitter Configuration. Also mark all the regions of operation
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b. Give the basic difference between an enhancement and depletion type 2+4+ 3
MOSFET. Discuss the construction of a n channel depletion type 4
MOSFET. Also draw its transfer and drain characteristics.

4. Attempt any one part of the following:


Q no. Question Marks CO
a. (i) What is an operational amplifier? Draw its block diagram. Write 5+5 3
the characteristics of an ideal operational amplifier.
(ii) With help of the circuit diagram, explain the working of OPAMP
as differentiator.
b. (i) What do you mean by IOT? Discuss its various components. 5+5 3
(ii) Define the following terms:
(1) CMRR (2) Peak Inverse Voltage

5. Attempt any one part of the following:


Q no. Question Marks CO
a. Simplify the following function using K map 6+4 4

F(A, B, C, D) = ∑(1, 3, 4, 5, 6, 7, 9, 11, 13, 15)


Also implement the simplified function using basic gates only.

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b. By showing all the calculations, do as directed: 10 2
(i) For a boolean function of 4 variables, ∑(3,7,11,14,15) = Π(?)

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(ii) (110110.011)2 = (?)16
(iii) (231.36)10 = (?)2
(iv) (11011.10)2 = (?)10
(v) (534)8 = (?)10

6. Attempt any one part of the following:


Q no. Question Marks CO
a. (i) What do you mean by amplitude modulation? Explain with help 5+5 4
of proper waveforms.
(ii) AM radio transmitter radiates 6 KW power when modulation
percentage is 70 %. Determine the carrier power.
b. (i) Write a short note on satellite communication system. 5+5 3
(ii) Differentiate between CDMA and GSM?

7. Attempt any one part of the following:


Q no. Question Marks CO
a. (i) What are universal gates? Why are they called so? 5+5 2

i
(ii) Implement XOR gate using NAND gate only.
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b. Determine the output for the following circuits: 5+5 4
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(i)
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(ii)

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