AUIRGP4066D1

AUTOMOTIVE GRADE AUIRGP4066D1-E

INSULATED GATE BIPOLAR TRANSISTOR WITH C
ULTRAFAST SOFT RECOVERY DIODE VCES = 600V
Features
• Low VCE (ON) Trench IGBT Technology
IC(Nominal) = 75A
• Low switching losses
G
• Maximum Junction temperature 175 °C tSC ≥ 5μs, TJ(max) = 175°C
• 5 μS short circuit SOA E
• Square RBSOA n-channel VCE(on) typ. = 1.70V
• 100% of the parts tested for 4X rated current (ILM)
• Positive VCE (ON) Temperature Coefficient
• Soft Recovery Co-Pak Diode C C
• Tight parameter distribution
• Lead-Free, RoHS Compliant
E
• Automotive Qualified * C E
Benefits G
G C
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to TO-247AC TO-247AD
AUIRGP4066D1 AUIRGP4066D1-E
Low V CE (ON) and Low Switching losses
• Rugged transient Performance for increased reliability G C E
• Excellent Current sharing in parallel operation G ate C ollector Em itter
• Low EMI
Ordering Information
Base part number Package Type Standard Pack Complete Part Number
Form Quantity
AUIRGP4066D1 TO-247AC Tube 25 AUIRGP4066D1
AUIRGP4066D1-E TO-247AD Tube 25 AUIRGP4066D1-E
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional
operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated
conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and
still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 140g
IC @ TC = 100°C Continuous Collector Current 90
INOMINAL Nominal Current 75
ICM Pulse Collector Current VGE = 15V 225
ILM Clamped Inductive Load Current VGE = 20V c 300 A
IF NOMINAL Diode Nominal Current d 75 g
IFM Diode Maximum Forward Current d 300
VGE Continuous Gate-to-Emitter Voltage ±20 V
Transient Gate-to-Emitter Voltage ±30
PD @ TC = 25°C Maximum Power Dissipation 454 W
PD @ TC = 100°C Maximum Power Dissipation 227
TJ Operating Junction and -55 to +175
TST G Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter Min. Typ. Max. Units
RθJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) f ––– ––– 0.33 °C/W
RθJC (Diode) Thermal Resistance Junction-to-Case-(each Diode)f ––– ––– 0.53
RθCS Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 –––
RθJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– 40 –––

*Qualification standards can be found at http://www.irf.com/

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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 200μA f
ΔV(B R)CES /ΔT J T emperature Coeff. of Breakdown Voltage — 0.30 — V/°C VGE = 0V, IC = 15mA (25°C-175°C)
— 1.70 2.1 IC = 75A, VGE = 15V, TJ = 25°C d
VCE(on) Collector-to-Emitter Saturation Voltage — 2.0 — V IC = 75A, VGE = 15V, TJ = 150°C d
— 2.1 — IC = 75A, VGE = 15V, TJ = 175°Cd
VGE(th) Gate Threshold Voltage 4.0 — 6.5 V VCE = VGE, I C = 2.1mA
Δ VGE(t h)/Δ T J Threshold Voltage temp. coefficient — -13 — mV/°C VCE = VGE, I C = 20mA (25°C - 175°C)
gfe Forward Transconductance — 50 — S VCE = 50V, IC = 75A, PW = 25μs
ICES Collector-to-Emitter Leakage Current — 3.0 200 μA VGE = 0V, VCE = 600V
— 10 — mA VGE = 0V, VCE = 600V, TJ = 175°C
VFM Diode Forward Voltage Drop — 1.60 1.77 V IF = 75A
— 1.54 — IF = 75A, TJ = 175°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) — 150 225 IC = 75A
Qge Gate-to-Emitter Charge (turn-on) — 40 60 nC VGE = 15V
Qgc Gate-to-Collector Charge (turn-on) — 60 90 VCC = 400V
Eon Turn-On Switching Loss — 4240 5190 IC = 75A, VCC = 400V, VGE = 15V
Eoff Turn-Off Switching Loss — 2170 3060 μJ RG = 10Ω, L = 100μH, TJ = 25°C
Etotal Total Switching Loss — 6410 8250 E nergy los s es include tail & diode revers e recovery
td(on) Turn-On delay time — 50 70 IC = 75A, VCC = 400V, VGE = 15V
tr Rise time — 80 100 ns RG = 10Ω, L = 100μH
td(off) Turn-Off delay time — 200 230 TJ = 25°C
tf Fall time — 60 80
Eon Turn-On Switching Loss — 6210 — IC = 75A, VCC = 400V, VGE=15V
Eoff Turn-Off Switching Loss — 2815 — μJ RG=10Ω, L=100μH, TJ = 175°C
Etotal Total Switching Loss — 9025 — E nergy los s es include tail & diode revers e recovery
td(on) Turn-On delay time — 45 — IC = 75A, VCC = 400V, VGE=15V
tr Rise time — 70 — ns RG=10Ω, L=100μH
td(off) Turn-Off delay time — 240 — TJ = 175°C
tf Fall time — 80 —
Cies Input Capacitance — 4470 — VGE = 0V
Coes Output Capacitance — 350 — pF VCC = 30V
Cres Reverse Transfer Capacitance — 140 — f = 1.0Mhz
TJ = 175°C, IC = 300A
RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 480V, Vp ”600V
Rg = 10Ω, VGE = +20V to 0V
SCSOA Short Circuit Safe Operating Area VCC = 400V, Vp ”600V
5 — — μs
Rg = 10Ω, VGE = +15V to 0V
Erec Reverse Recovery Energy of the Diode — 680 — μJ TJ = 175°C
trr Diode Reverse Recovery Time — 240 — ns VCC = 400V, IF = 75A
Irr Peak Reverse Recovery Current — 50 — A VGE = 15V, Rg = 10Ω, L =100μH

Notes:
 VCC = 80% (VCES), VGE = 20V, L = 100μH, RG = 50Ω, tested in production ILM ≤ 400A.
‚ Pulse width limited by max. junction temperature.
ƒ Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
„ Rθ is measured at TJ of approximately 90°C.
… Calculated continuous current based on maximum allowable junction temperature. Package IGBT current limit is 120A. Package diode current
limit is120A. Note that current limitations arising from heating of the device leads may occur.

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150 500

125
400

100
300

Ptot (W)
IC (A)

75

200
50

25 100

0 0
25 50 75 100 125 150 175 25 50 75 100 125 150 175

TC (°C) T C (°C)

Fig. 1 - Maximum DC Collector Current vs. Fig. 2 - Power Dissipation vs. Case
Case Temperature Temperature
1000 1000

100 10μsec

100μsec 100
IC (A)

IC (A)

10 1msec

DC
10
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1 1
1 10 100 1000 10 100 1000
VCE (V) VCE (V)
Fig. 3 - Forward SOA Fig. 4 - Reverse Bias SOA
TC = 25°C, TJ ≤ 175°C; VGE =15V TJ = 175°C; VGE =20V
300 300

250 250

VGE = 18V
200 VGE = 18V
200 VGE = 15V
VGE = 15V
VGE = 12V
ICE (A)
ICE (A)

VGE = 12V
150 VGE = 10V 150
VGE = 10V
VGE = 8.0V
VGE = 8.0V
100 100

50 50

0 0
0 2 4 6 8 10 0 2 4 6 8 10

VCE (V) VCE (V)

Fig. 5 - Typ. IGBT Output Characteristics Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = ≤60μs TJ = 25°C; tp = ≤60μs

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300 300
VGE = 18V -40°C
VGE = 15V 250 25°C
250
VGE = 12V 175°C
VGE = 10V
200 200
VGE = 8.0V
ICE (A)

IF (A)
150 150

100 100

50 50

0 0
0 2 4 6 8 10 0.0 1.0 2.0 3.0 4.0
VF (V)
VCE (V)
Fig. 7 - Typ. IGBT Output Characteristics Fig. 8 - Typ. Diode Forward Characteristics
TJ = 175°C; tp = ≤60μs tp = ≤60μs
20 20
18 18
16 16
14 14
12 ICE = 38A 12
VCE (V)

VCE (V)

ICE = 38A
10 ICE = 75A 10 ICE = 75A
ICE = 150A
8 8 ICE = 150A

6 6
4 4
2 2
0 0
5 10 15 20 5 10 15 20
VGE (V) VGE (V)

Fig. 9 - Typical VCE vs. VGE Fig. 10 - Typical VCE vs. VGE
TJ = -40°C TJ = 25°C
20 300

18
IC, Collector-to-Emitter Current (A)

250
16 T J = 25°C
14 T J = 175°C
200
12
VCE (V)

ICE = 38A
10 150
ICE = 75A
8 ICE = 150A
100
6
4 50
2
0 0
5 10 15 20 4 6 8 10 12 14 16 18

VGE (V) VGE, Gate-to-Emitter Voltage (V)

Fig. 11 - Typical VCE vs. VGE Fig. 12 - Typ. Transfer Characteristics

TJ = 175°C VCE = 50V; tp = ≤60μs

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18000 1000

16000

14000 tdOFF

Swiching Time (ns)

12000
Energy (μJ)

EON
10000 tF
100
8000

6000 tR
tdON
4000 EOFF

2000

0 10
0 25 50 75 100 125 150 0 50 100 150
IC (A)
IC (A)

Fig. 13 - Typ. Energy Loss vs. IC Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 100μH; VCE = 400V, RG = 10Ω; VGE = 15V TJ = 175°C; L = 100μH; VCE = 400V, RG = 10Ω; VGE = 15V
15000 10000

13000

11000 tdOFF
Swiching Time (ns)
1000
Energy (μJ)

9000 EON

7000
tF
100 tR
5000
EOFF
tdON
3000

1000 10
0 25 50 75 100 0 20 40 60 80 100 120
R G (Ω)
Rg (Ω)
Fig. 15 - Typ. Energy Loss vs. RG Fig. 16 - Typ. Switching Time vs. RG
TJ = 175°C; L = 100μH; VCE = 400V, ICE = 75A; VGE = 15V TJ = 175°C; L = 100μH; VCE = 400V, ICE = 75A; VGE = 15V
60 55

55 RG = 10Ω
50
50 RG = 22Ω
45
45
RG = 47Ω
IRR (A)
IRR (A)

40 40

35 RG = 100Ω
35
30
30
25

20 25
20 40 60 80 100 120 140 160 0 20 40 60 80 100
IF (A) RG (Ω)

Fig. 17 - Typ. Diode IRR vs. IF Fig. 18 - Typ. Diode IRR vs. RG
TJ = 175°C TJ = 175°C

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55 18000

16000
50 150A
14000 47Ω
22Ω
45 12000

QRR (μC)
IRR (A)

10000 75A
100Ω
40
8000 10Ω

6000
35
38A
4000

30 2000
400 500 600 700 200 400 600 800 1000
diF /dt (A/μs) diF /dt (A/μs)

Fig. 19 - Typ. Diode IRR vs. diF/dt Fig. 20 - Typ. Diode QRR vs. diF/dt
VCC = 400V; VGE = 15V; IF = 75A; TJ = 175°C VCC = 400V; VGE = 15V; TJ = 175°C
3500 20 800
RG = 10Ω
3000 RG = 22Ω Tsc
RG = 47Ω 15 600
2500 RG = 100Ω
Energy (μJ)

Current (A)
Isc
Time (μs)

2000 10 400

1500
5 200
1000

500 0 0
25 75 125 175 8 10 12 14 16 18
IF (A) VGE (V)

Fig. 21 - Typ. Diode ERR vs. IF Fig. 22 - VGE vs. Short Circuit Time
TJ = 175°C VCC = 400V; TC = 25°C
10000 16

Cies 14 VCES = 400V

VGE, Gate-to-Emitter Voltage (V)

VCES = 300V
12
Capacitance (pF)

1000
10

8
Coes
6
100
Cres 4

10 0
0 100 200 300 400 500 0 20 40 60 80 100 120 140 160
VCE (V) Q G, Total Gate Charge (nC)

Fig. 23 - Typ. Capacitance vs. VCE Fig. 24 - Typical Gate Charge vs. VGE
VGE= 0V; f = 1MHz ICE = 75A; L = 485μH

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D = 0.50
Thermal Response ( Z thJC )

0.1
0.20
0.10
0.05 R1 R2 R3 R4
R1 R2 R3 R4 Ri (°C/W) τi (sec)
0.01 0.02 τJ τC 0.00738 0.000009
τJ τ
0.01 τ1 0.09441 0.000179
τ2 τ3 τ4
τ1 τ2 τ3 τ4
0.13424 0.002834
Ci= τi/Ri
SINGLE PULSE Ci i/Ri 0.09294 0.0182
0.001 ( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)

10

1
Thermal Response ( Z thJC )

D = 0.50

0.1 0.20
0.10 R1 R2 R3 R4 Ri (°C/W) τi (sec)
R1 R2 R3 R4
0.05 τJ 0.012 0.000034
τC
τJ
0.02 τ1
τ
0.163 0.000390
0.01 0.01 τ1
τ2 τ3 τ4
τ2 τ3 τ4 0.215 0.005990
Ci= τi/Ri 0.139 0.033585
Ci i/Ri

0.001 Notes:
SINGLE PULSE 1. Duty Factor D = t1/t2
( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthjc + Tc

0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)

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L
VC C 80 V DU T
D UT 4 80V
0
Rg
1K

Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit

d io d e clamp /
DU T
L

4x
- 5V
DC 360V
DU T /
DUT D RIVER VCC
Rg

Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit

VCC C force
R=
ICM
400μH
D1 10K
C sense

DUT VCC
G force DUT 0.0075μ
Rg

E sense

E force

Fig.C.T.5 - Resistive Load Circuit Fig.C.T.6 - BVCES Filter Circuit

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700 140 700 140

tr
tf 600 120
600 120
TEST
90% ICE 500 CURRENT 100
500 100

400 80 400 90% ICE 80

VCE (V)
VCE (V)

I CE (A)
ICE (A)
300 60 300 60

200 40 200 40
10%
10% ICE 100 ICE 20
100 20

0 0 0 0
Eof f Loss Eon Loss
-100 -20 -100 -20
-0.4 -0.2 0 0.2 0.4 0.6 -0.4 -0.2 0 0.2 0.4 0.6
time(μs) time (μs)

Fig. WF1 - Typ. Turn-off Loss Waveform Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4 @ TJ = 175°C using Fig. CT.4

90 700 700
80
70 QRR 600 600
60
50 500 500
40 VCE
t RR 400 400
30
Vce (V)

20
Ice (A)
VF (V)

300 300
10 ICE
0 200 200
-10
-20 Peak IRR 100 100
-30
-40 0 0
-50
-60 -100 -100
-0.20 0.00 0.20 0.40 0.60 0.80 -3 0 3 6 9 12
time (μS) Time (uS)

Fig. WF3 - Typ. Diode Recovery Waveform Fig. WF4 - Typ. S.C. Waveform
@ TJ = 175°C using Fig. CT.4 @ TJ = 25°C using Fig. CT.3

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TO-247AC Package Outline

Dimensions are shown in millimeters (inches)

TO-247AC Part Marking Information

Part Number AUP4066D1

Date Code
Y= Year
IR Logo
YWWA WW= Work Week
A= Automotive, Lead Free

XX or XX

Lot Code

TO-247AC package is not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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TO-247AD Package Outline

Dimensions are shown in millimeters (inches)

TO-247AD Part Marking Information

Part Number AUP4066D1-E

Date Code
Y= Year
IR Logo
YWWA WW= Work Week
A= Automotive, Lead Free

XX or XX

Lot Code

TO-247AD package is not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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†
Qualification Information
Automotive
(per AEC-Q101)

Qualification Level Comments: This part number(s) passed Automotive qualification.

IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.

Moisture Sensitivity Level TO-247AC

N/A
TO-247AD
Machine Model Class M4 (+/-425V)
††

AEC-Q101-002
Human Body Model Class H2 (+/-4000V)
††
ESD
AEC-Q101-001
Charged Device Model Class C5 (+/-1125V)
††

AEC-Q101-005
RoHS Compliant Yes

† Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/

†† Highest passing voltage

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IMPORTANT NOTICE

Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve
the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services
at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow
automotive industry and / or customer specific requirements with regards to product discontinuance and process change
notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.

IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s
standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this
warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily
performed.

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and applications using IR components. To minimize the risks with customer products and applications, customers should
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For technical support, please contact IR’s Technical Assistance Center

http://www.irf.com/technical-info/

WORLD HEADQUARTERS:

101 N. Sepulveda Blvd., El Segundo, California 90245

Tel: (310) 252-7105

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