STGB10H60DF, STGF10H60DF, STGP10H60DF

Datasheet

Trench gate field-stop 600 V, 10 A high speed H series IGBT

TAB Features
• High speed switching
3
1
D2 PAK
• Tight parameters distribution
3
1
2
• Safe paralleling
TO-220FP
TAB
• Low thermal resistance
• Short-circuit rated
1
2
3
• Ultrafast soft recovery antiparallel diode
TO-220

C(2, TAB) Applications

• Motor control
• UPS
G(1)
• PFC

Description
E(3)
NG1E3C2T
These devices are IGBTs developed using an advanced proprietary trench gate field-
stop structure. These devices are part of the H series of IGBTs, which represents
an optimum compromise between conduction and switching losses to maximize the
efficiency of high switching frequency converters. Furthermore, a slightly positive
VCE(sat) temperature coefficient and very tight parameter distribution result in safer
paralleling operation.

Product status link

STGB10H60DF
STGF10H60DF
STGP10H60DF

DS9880 - Rev 5 - January 2022 www.st.com

For further information contact your local STMicroelectronics sales office.
 STGB10H60DF, STGF10H60DF, STGP10H60DF
Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings

Value
Symbol Parameter Unit
D2PAK, TO-220 TO-220FP

VCES Collector-emitter voltage (VGE = 0 V) 600 V

Continuous collector current at TC = 25 °C 20 20 (1)

IC A
Continuous collector current at TC = 100 °C 10 10 (1)

ICP (2) Pulsed collector current 40 40 A

Gate-emitter voltage ±20

VGE V
Transient gate-emitter voltage ±30
Continuous forward current at TC = 25 °C 20 20 (1)
IF A
Continuous forward current at TC = 100 °C 10 10 (1)

IFP (2) Pulsed forward current 40 40 A

Insulation withstand voltage (RMS) from all three leads to

VISO 2.5 kV
external heat sink (t = 1 s; Tc = 25 °C)

PTOT Total power dissipation at TC = 25 °C 115 30 W

TSTG Storage temperature range -55 to 150

°C
TJ Operating junction temperature range -55 to 175

1. Limited by maximum junction temperature.

2. Pulse width limited by maximum junction temperature.

Table 2. Thermal data

Value
Symbol Parameter Unit
D2PAK, TO-220 TO-220FP

RthJC Thermal resistance, junction-to-case IGBT 1.3 5 °C/W

RthJC Thermal resistance, junction-to-case diode 2.78 6.25 °C/W

RthJA Thermal resistance, junction-to-ambient 62.5 62.5 °C/W

DS9880 - Rev 5 page 2/25

 STGB10H60DF, STGF10H60DF, STGP10H60DF
Electrical characteristics

2 Electrical characteristics

TC = 25 °C unless otherwise specified.

Table 3. Static

Symbol Parameter Test conditions Min. Typ. Max. Unit

Collector-emitter
V(BR)CES VGE = 0 V, IC = 2 mA 600 V
breakdown voltage
VGE = 15 V, IC= 10 A 1.50 1.95
Collector-emitter
VCE(sat) VGE = 15 V, IC = 10 A, TJ = 125 °C 1.65 V
saturation voltage
VGE = 15 V, IC = 10 A, TJ = 175 °C 1.70

Gate threshold
VGE(th) VCE = VGE, IC = 250 μA 5 6 7 V
voltage
Collector cut-off
ICES VCE = 600 V, VGE = 0 V 25 μA
current
Gate-emitter leakage
IGES VGE = ±20 V, VCE = 0 V ±250 nA
current

Table 4. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Cies Input capacitance 1300

Coes Output capacitance 60

VCE = 25 V, f = 1 MHz, VGE = 0 V - - pF
Reverse transfer
Cres 30
capacitance
Qg Total gate charge 57
VCC = 480 V, IC = 10 A, VGE = 0 to 15 V
Qge Gate-emitter charge - 8 - nC
(see Figure 35. Gate charge test circuit)
Qgc Gate-collector charge 27

DS9880 - Rev 5 page 3/25

 STGB10H60DF, STGF10H60DF, STGP10H60DF
Electrical characteristics

Table 5. Switching characteristics (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time VCE = 400 V, IC = 10 A, RG = 10 Ω, 19.5

ns
tr Current rise time VGE = 15 V 6.9
(see Figure 34. Test circuit for inductive
(di/dt)on Turn-on current slope load switching and Figure 36. Switching 1170 A/μs
waveform)
- -
td(on) Turn-on delay time VCE = 400 V, IC = 10 A, RG = 10 Ω, 20
ns
tr Current rise time VGE = 15 V, TJ = 175 °C 6.8
(see Figure 34. Test circuit for inductive
(di/dt)on Turn-on current slope load switching and Figure 36. Switching 1176 A/μs
waveform)
tr(Voff) Off voltage rise time VCE = 400 V, IC = 10 A, RG = 10 Ω, 19.6

td(off) Turn-off delay time VGE = 15 V 103

(see Figure 34. Test circuit for inductive
tf Current fall time load switching and Figure 36. Switching 73
waveform)
- - ns
tr(Voff) Off voltage rise time VCE = 400 V, IC = 10 A, RG = 10 Ω, 28

td(off) Turn-off delay time VGE = 15 V, TJ = 175 °C 104

(see Figure 34. Test circuit for inductive
tf Current fall time load switching and Figure 36. Switching 110
waveform)
Short-circuit withstand
tsc VCC ≤ 360 V, VGE = 15 V, RG = 10 Ω 3 5 - μs
time

Table 6. Switching energy (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

Turn-on switching
Eon (1) VCE = 400 V, IC = 10 A, RG = 10 Ω, 83
energy
Turn-off switching VGE = 15 V
Eoff (2) 140
energy (see Figure 34. Test circuit for inductive load
switching)
Ets Total switching energy 223
- - μJ
Turn-on switching
Eon(1) VCE = 400 V, IC = 10 A, RG = 10 Ω, 148
energy
Turn-off switching VGE = 15 V, TJ = 175 °C
Eoff (2) 214
energy (see Figure 34. Test circuit for inductive load
switching)
Ets Total switching energy 362

1. Including the reverse recovery of the diode.

2. Including the tail of the collector current.

DS9880 - Rev 5 page 4/25

 STGB10H60DF, STGF10H60DF, STGP10H60DF
Electrical characteristics

Table 7. Collector-emitter diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

IF = 10 A 1.7 2.2
VF Forward on-voltage - V
IF = 10 A, TJ = 175 °C 1.3

Reverse recovery
trr 107 ns
time
Vr = 60 V; IF = 10 A, diF/dt = 100 A / μs
Reverse recovery
Qrr (see Figure 37. Diode reverse recovery 120 nC
charge
waveform)
Reverse recovery
Irrm 2.24 A
current
-
Reverse recovery
trr 161 ns
time Vr = 60 V; IF = 10 A, diF/dt = 100 A / μs
Reverse recovery TJ = 175 °C
Qrr 362 nC
charge
(see Figure 37. Diode reverse recovery
Reverse recovery waveform)
Irrm 4.5 A
current

DS9880 - Rev 5 page 5/25

 STGB10H60DF, STGF10H60DF, STGP10H60DF
Electrical characteristics (curves)

2.1 Electrical characteristics (curves)

Figure 1. Power dissipation vs case temperature for Figure 2. Collector current vs case temperature for D2PAK
D2PAK and TO-220 and TO-220
GIP D230420191104MT
Ptot GIPD281020131339FSR IC
(W) (A)
140
20
120

100 15
80

60 10

40
VGE≥ 15V, T J≤ 175 °C 5 VGE ≥ 15V, TJ ≤ 175 °C
20

0
0 25 50 75 100 125 150 175 TC(°C) 0
0 25 50 75 100 125 150 175 TC (°C)

Figure 3. Power dissipation vs case temperature for Figure 4. Collector current vs case temperature for
TO-220FP TO-220FP
GIPD281020131351FSR GIPD281020131401FSR
IC
(A)

15

10

5
VGE ≥ 15V, T J ≤ 175 °C

0
0 50 100 150 TC(°C)

Figure 5. Output characteristics (TJ = 25°C) Figure 6. Output characteristics (TJ = 175°C)
GIPD281020131405FSR GIPD281020131411FSR
IC IC
(A) (A)
VGE=15V 11V VGE=15V 11V

13V
30 30

9V 9V
20 20

10 10

7V
0 0
0 1 2 3 4 VCE(V) 0 1 2 3 4 VCE(V)

DS9880 - Rev 5 page 6/25

 STGB10H60DF, STGF10H60DF, STGP10H60DF
Electrical characteristics (curves)

Figure 7. VCE(sat) vs junction temperature Figure 8. VCE(sat) vs collector current

GIP D281020131418FS R
VCE(s a t) VCE(sat) GADG130620191022VCEC

IC = 20A (V)
TJ = 175°C
GE = 15V 2.2
VGE = 15 V
2.0
TJ = 25°C
1.8
1.8 IC = 10A
1.6
1.6
1.4 TJ = -40°C
1.4 IC 1.2
1.2
1.0
0.8
-50 TJ (°C 0 4 8 12 16 20 IC (A)

Figure 9. Collector current vs switching frequency for Figure 10. Collector current vs switching frequency for
D2PAK and TO-220 TO-220FP

IC GADG130620191139CCS IC GADG130620191023CCS
(A) (A)

TC = 80°C
40 16
TC = 80°C

30 12
TC = 100°C TC = 100°C

20 8

10 4
Rectangular current shape Rectangular current shape
(duty cycle = 0.5, VCC = 400 V, (duty cycle = 0.5, VCC = 400 V,
RG = 4.7Ω, VGE = 0/15 V , TJ = 175 °C) RG = 4.7Ω, VGE = 0/15 V , TJ = 175 °C)
0 0
10 0 10 1 10 2 f (kHz) 10 0 10 1 10 2 f (kHz)

Figure 11. Forward bias safe operating area for D2PAK

Figure 12. Forward bias safe operating area for TO-220FP
and TO-220
GIPD281020131505FSR
GIPD281020131452FSR IC
IC (A)
(A)

10
10 10 µs
10 µs

100 µs
100 µs

1
1 Tj≤175 °C, Tc= 25°C 1 ms
Tj≤175 °C, Tc= 25°C 1 ms
VGE = 15 V
VGE = 15 V
single pulse
single pulse
0.1
0.1 1 10 100 VCE(V)
1 10 100 VCE(V)

DS9880 - Rev 5 page 7/25

 STGB10H60DF, STGF10H60DF, STGP10H60DF
Electrical characteristics (curves)

Figure 13. Transfer characteristics Figure 14. Diode VF vs forward current

IC GIPD281020131513FSR VF GADG130620191024DVF
(A) (V) TJ = 40 °C

35 VCE=5V
2.0
30
TJ = 25 °C
25 1.6
20
TJ = 175 °C
15 1.2

10 TJ=175°C
TJ=25°C 0.8
5
TJ=-40°C
0 0.4
6 7 8 9 10 VGE(V)
0 4 8 12 16 20 IF (A)

Figure 15. Normalized VGE(th) vs junction temperature Figure 16. Normalized V(BR)CES vs junction temperature

VGE(th) GIPD281020131600FSR V(BR)CES GADG130620191025NVBR

(norm) (Norm.)
1.1 IC= 1mA
VCE= VGE
1.10
1.0
IC = 2mA
1.05
0.9

1.00
0.8

0.7 0.95

0.6 0.90
-50 0 50 100 150 TJ(°C) -50 0 50 100 150 TJ (°C)

Figure 17. Capacitance variation Figure 18. Gate charge vs gate-emitter voltage
C GADG130620191026CVR
VGE GIPD281020131606FSR
(pF) (V)

16 IC= 10A
10 3 CIES
IGE= 1mA
VCC= 480V
12
10 2
8

f = 1MHZ COES
10 1
CRES 4

0
10 0 0 20 40 60 Qg (nC)
10 -1 10 0 10 1 10 2 VCE (V)

DS9880 - Rev 5 page 8/25

 STGB10H60DF, STGF10H60DF, STGP10H60DF
Electrical characteristics (curves)

Figure 19. Switching energy vs collector current Figure 20. Switching energy vs gate resistance
E GADG130620191055SLC
E GIPD281020131618FSR

(µJ) VCC = 400V, VGE = 15V, (µJ)

RG = 10Ω, TJ = 175°C Eoff
360 VCC = 400 V, V GE = 15 V,
260 IC = 10 A, TJ = 175 °C
300
EOFF
Eon 220
240

180 180

120 EON
140
60

0 100
0 4 8 12 16 20 IC (A) 0 10 20 30 40 RG(Ω)

Figure 21. Switching energy vs temperature

Figure 22. Switching energy vs collector-emitter voltage
GIPD281020131623FSR
E GIPD281020131630FSR
(µJ) E
VCC= 400V, V GE= 15V, (µJ)
TJ= 175°C, VGE= 15V,
RG= 10Ω, IC= 10A RG= 10Ω, IC= 10A
200 250

EOFF
200 EOFF
150
150
EON EON
100
100

50 50

0
0 200 250 300 350 400 450 VCE(V)
-50 0 50 100 150 TJ(°C)

Figure 23. Short circuit time and current vs VGE Figure 24. Switching times vs collector current
GIPD281020131641FSR
GIPD281020131634FSR t
tsc (µs) ISC(A) (ns)
VCC= 360V, RG= 10W TJ= 175°C, VGE= 15V,
ISC
RG= 10Ω, VCC= 400V
14
200
tSC
12 tf
t doff
10 150 100

8 tr

100
6 t don

4 50
10 11 12 13 14 VGE(V) 10
0 4 8 12 16 IC(A)

DS9880 - Rev 5 page 9/25

 STGB10H60DF, STGF10H60DF, STGP10H60DF
Electrical characteristics (curves)

Figure 25. Switching times vs gate resistance Figure 26. Reverse recovery current vs diode current
slope
GIPD281020131655FSR GIPD281020131713FSR
t Irm
(ns) (A)
TJ= 175°C, VGE= 15V, IF = 10A, Vr = 400V
IC= 10A, VCC= 400V 20
t doff

tf TJ =175°C
100 16

12

t don tr
10 8
TJ =25°C

1 0
0 10 20 30 40 RG(Ω) 0 200 400 600 800 di/dt(A/ µs)

Figure 28. Reverse recovery charge vs diode current

Figure 27. Reverse recovery time vs diode current slope
slope
GIPD281020131720FSR
t rr GIPD281020131724FSR
(µs) Qrr
IF = 10A, Vr = 400V (nC)
IF = 10A, Vr = 400V
160 500 TJ =175°C

120 400

TJ =175°C 300
80
TJ =25°C
200
40
100
TJ =25°C
0
0 200 400 600 800 di/dt(A/ µs) 0
0 200 400 600 800 di/dt(A/ µs)

Figure 30. Normalized transient thermal impedance for

Figure 29. Reverse recovery energy vs diode current TO-220 and D2PAK (IGBT)
slope
ZthTO2T_B
Err GIPD281020131728FSR K
(µJ) δ=0.5
IF = 10A, Vr = 400V
140
0.2
120
TJ =175°C 0.1 0.05
100
-1
10
80 0.02

TJ =25°C
60 0.01 Zth = k*RthJC
δ = tp/t
40
Single pulse
tp
20 -2 t
0 200 400 600 800 di/dt(A/ µs) 10 -5 -4 -2 -1
tp (s)
-3
10 10 10 10 10

DS9880 - Rev 5 page 10/25

 STGB10H60DF, STGF10H60DF, STGP10H60DF
Electrical characteristics (curves)

Figure 31. Normalized transient thermal impedance for

Figure 32. Normalized transient thermal impedance for
TO-220FP (IGBT)
TO-220 and D2PAK (diode)
ZthTOF2T_B

10-1

Zth
Zth= k*R
k R thj-c
thj-C

10-2 δδ==tptp/ Ƭ
/Ƭ
Zth = k*RthJC
δ = tp/t
tpp
ƬƬ
tp
t
10-3
10-5 10-4 10-3 10-2 10-1 100 tp (s)

Figure 33. Normalized transient thermal impedance for TO-220FP (diode)

K GC20940

10-1

10-2

10-3
10-4 10-3 10-2 10-1 100 tp (s)

DS9880 - Rev 5 page 11/25

 STGB10H60DF, STGF10H60DF, STGP10H60DF
Test circuits

3 Test circuits

Figure 34. Test circuit for inductive load switching Figure 35. Gate charge test circuit

A A
C
L=100 µH k
G k

E B
B
C 3.3 1000 VCC
µF µF
k
G D.U.T
k
+ RG E

k
-
k

AM01504v1 AM01505v1

Figure 36. Switching waveform Figure 37. Diode reverse recovery waveform

90%

VG 10%

90%

VCE 10%
tr(Voff)
tcross
25
90%

IC td(off)
10%
td(on) tf
tr(Ion)
ton toff

AM01506v1

DS9880 - Rev 5 page 12/25

 STGB10H60DF, STGF10H60DF, STGP10H60DF
Package information

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.

4.1 D²PAK (TO-263) type A2 package information

Figure 38. D²PAK (TO-263) type A2 package outline

0079457_A2_26

DS9880 - Rev 5 page 13/25

 STGB10H60DF, STGF10H60DF, STGP10H60DF
D²PAK (TO-263) type A2 package information

Table 8. D²PAK (TO-263) type A2 package mechanical data

mm
Dim.
Min. Typ. Max.

A 4.40 4.60
A1 0.03 0.23
b 0.70 0.93
b2 1.14 1.70
c 0.45 0.60
c2 1.23 1.36
D 8.95 9.35
D1 7.50 7.75 8.00
D2 1.10 1.30 1.50
E 10.00 10.40
E1 8.70 8.90 9.10
E2 7.30 7.50 7.70
e 2.54
e1 4.88 5.28
H 15.00 15.85
J1 2.49 2.69
L 2.29 2.79
L1 1.27 1.40
L2 1.30 1.75
R 0.40
V2 0° 8°

DS9880 - Rev 5 page 14/25

 STGB10H60DF, STGF10H60DF, STGP10H60DF
D²PAK (TO-263) type A2 package information

Figure 39. D²PAK (TO-263) recommended footprint (dimensions are in mm)

0079457_Rev26_footprint

DS9880 - Rev 5 page 15/25

 STGB10H60DF, STGF10H60DF, STGP10H60DF
D²PAK packing information

4.2 D²PAK packing information

Figure 40. D²PAK tape outline

DS9880 - Rev 5 page 16/25

 STGB10H60DF, STGF10H60DF, STGP10H60DF
D²PAK packing information

Figure 41. D²PAK reel outline

40mm min.
access hole
at slot location
B

D C

N
A

Tape slot G measured

in core for at hub
Full radius tape start
2.5mm min.width

AM06038v1

Table 9. D²PAK tape and reel mechanical data

Tape Reel

mm mm
Dim. Dim.
Min. Max. Min. Max.

A0 10.5 10.7 A 330

B0 15.7 15.9 B 1.5
D 1.5 1.6 C 12.8 13.2
D1 1.59 1.61 D 20.2
E 1.65 1.85 G 24.4 26.4
F 11.4 11.6 N 100
K0 4.8 5.0 T 30.4
P0 3.9 4.1
P1 11.9 12.1 Base quantity 1000
P2 1.9 2.1 Bulk quantity 1000
R 50
T 0.25 0.35
W 23.7 24.3

DS9880 - Rev 5 page 17/25

 STGB10H60DF, STGF10H60DF, STGP10H60DF
TO-220FP package information

4.3 TO-220FP package information

Figure 42. TO-220FP package outline

7012510_Rev_13_B

DS9880 - Rev 5 page 18/25

 STGB10H60DF, STGF10H60DF, STGP10H60DF
TO-220FP package information

Table 10. TO-220FP package mechanical data

mm
Dim.
Min. Typ. Max.

A 4.40 4.60
B 2.50 2.70
D 2.50 2.75
E 0.45 0.70
F 0.75 1.00
F1 1.15 1.70
F2 1.15 1.70
G 4.95 5.20
G1 2.40 2.70
H 10.00 10.40
L2 16.00
L3 28.60 30.60
L4 9.80 10.60
L5 2.90 3.60
L6 15.90 16.40
L7 9.00 9.30
Dia 3.00 3.20

DS9880 - Rev 5 page 19/25

 STGB10H60DF, STGF10H60DF, STGP10H60DF
TO-220 type A package information

4.4 TO-220 type A package information

Figure 43. TO-220 type A package outline

0015988_typeA_Rev_23

DS9880 - Rev 5 page 20/25

 STGB10H60DF, STGF10H60DF, STGP10H60DF
TO-220 type A package information

Table 11. TO-220 type A package mechanical data

mm
Dim.
Min. Typ. Max.

A 4.40 4.60
b 0.61 0.88
b1 1.14 1.55
c 0.48 0.70
D 15.25 15.75
D1 1.27
E 10.00 10.40
e 2.40 2.70
e1 4.95 5.15
F 1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L 13.00 14.00
L1 3.50 3.93
L20 16.40
L30 28.90
øP 3.75 3.85
Q 2.65 2.95
Slug flatness 0.03 0.10

DS9880 - Rev 5 page 21/25

 STGB10H60DF, STGF10H60DF, STGP10H60DF
Ordering information

5 Ordering information

Table 12. Order codes

Order code Marking Package Packing

STGB10H60DF GB10H60DF D2PAK Tape and reel

STGF10H60DF GF10H60DF TO-220FP

Tube
STGP10H60DF GP10H60DF TO-220

DS9880 - Rev 5 page 22/25

 STGB10H60DF, STGF10H60DF, STGP10H60DF

Revision history

Table 13. Document revision history

Date Version Changes

12-Aug-2013 1 Initial release.

Document status promoted from preliminary to production data.
31-Oct-2013 2 Inserted Section 2.1: Electrical characteristics (curves).
Minor text changes.
Updated title, applications and description in cover page.
Added Section 5 Ordering information.
20-Jun-2019 3
Updated Section 2.1 Electrical characteristics (curves).
Minor text changes.
Updated Table 3. Static and Table 4. Dynamic.
05-Mar-2020 4
Minor text changes.

Modified Figure 30. Normalized transient thermal impedance for TO-220 and D2PAK (IGBT)
and Figure 32. Normalized transient thermal impedance for TO-220 and D2PAK (diode).
21-Jan-2022 5 Added Figure 31. Normalized transient thermal impedance for TO-220FP (IGBT) and
Figure 33. Normalized transient thermal impedance for TO-220FP (diode).
Minor text changes.

DS9880 - Rev 5 page 23/25

 STGB10H60DF, STGF10H60DF, STGP10H60DF
Contents

Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12

4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
4.1 D²PAK (TO-263) type A2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.2 D²PAK packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
4.3 TO-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
4.4 TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

5 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23

DS9880 - Rev 5 page 24/25

 STGB10H60DF, STGF10H60DF, STGP10H60DF

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