C4495 Sankenelectric
C4495 Sankenelectric
com
High hFE
LOW VCE (sat) 2SC4495
Silicon NPN Triple Diffused Planar Transistor Application : Audio Temperature Compensation and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20(TO220F)
Symbol 2SC4495 Unit Symbol Conditions 2SC4495 Unit 4.2±0.2
10.1±0.2
4.0±0.2
2.8 c0.5
VCBO 80 V ICBO VCB=80V 10max µA
VCEO 50 V IEBO VEB=6V 10max µA
8.4±0.2
16.9±0.3
VEBO 6 V V(BR)CEO IC=25mA 50min V
ø3.3±0.2
IC 3 A hFE VCE=4V, IC=0.5A 500min a
0.8±0.2
b
IB 1 A VCE(sat) IC=1A, IB=20mA 0.5max V
PC 25(Tc=25°C) W fT VCE=12V, IE=–0.1A 40typ MHz
±0.2
3.9
13.0min
Tj 150 °C COB VCB=10V,f=1MHz 30typ pF 1.35±0.15
Tstg 1.35±0.15
–55 to +150 °C
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
■Typical Switching Characteristics (Common Emitter) 2.2±0.2
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Type No.
B C E
20 20 1 10 –5 15 –30 0.45typ 1.60typ 0.85typ b. Lot No.
3 1.5 3
A A
3 0m 1 8m
A
12m
2.5
8mA
2 1 2
5m A
3mA 1.5
2mA
Temp)
p)
Tem
mp)
1 0.5 3A 1
e Te
se
1mA
(Case
(Ca
(Cas
I B =0.5mA 2A
˚C
–55˚C
0.5
125
25˚C
I C =1A
0 0 0
0 1 2 3 4 5 6 1 10 100 1000 0 0.5 1 1.5
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)
(V C E =4V) (V C E =4V)
3000 5000 7
125˚C
Typ 25˚C 5
DC Cur rent Gain h FE
500
500
100
50
100 20 1
0.01 0.1 0.5 1 3 0.01 0.1 0.5 1 3 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
s
10 in mm
m
Cu t-off Fre quen cy f T ( MH Z )
s
Typ
Collect or Cur ren t I C (A)
10
40 DC 20
0m
W
s
ith
1 In
fin
ite
150x150x2
0.5 he
1 00x 1 0 at
0x si
20 2 nk
10
Without Heatsink
50x50x2
Natural Cooling
0.1
Without Heatsink
2
0 0.05 0
–0.005 –0.01 –0.1 –1 3 5 10 50 100 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
109