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C4495 Sankenelectric

This document provides specifications for the 2SC4495 silicon NPN triple diffused planar transistor. It lists the transistor's absolute maximum ratings, such as maximum voltages for the collector-base, collector-emitter, and emitter-base junctions. It also provides the minimum electrical characteristics, including high current gain (hFE) of 500, low saturation voltage (VCE(sat)) of 0.5V maximum, and transition frequency (fT) of 40MHz typical. The transistor is packaged in the TO-220F case and is suitable for applications such as audio temperature compensation and general purpose use.

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0% found this document useful (0 votes)
50 views1 page

C4495 Sankenelectric

This document provides specifications for the 2SC4495 silicon NPN triple diffused planar transistor. It lists the transistor's absolute maximum ratings, such as maximum voltages for the collector-base, collector-emitter, and emitter-base junctions. It also provides the minimum electrical characteristics, including high current gain (hFE) of 500, low saturation voltage (VCE(sat)) of 0.5V maximum, and transition frequency (fT) of 40MHz typical. The transistor is packaged in the TO-220F case and is suitable for applications such as audio temperature compensation and general purpose use.

Uploaded by

Lope Garcia
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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www.DataSheet4U.

com
High hFE
LOW VCE (sat) 2SC4495
Silicon NPN Triple Diffused Planar Transistor Application : Audio Temperature Compensation and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20(TO220F)
Symbol 2SC4495 Unit Symbol Conditions 2SC4495 Unit 4.2±0.2
10.1±0.2

4.0±0.2
2.8 c0.5
VCBO 80 V ICBO VCB=80V 10max µA
VCEO 50 V IEBO VEB=6V 10max µA

8.4±0.2
16.9±0.3
VEBO 6 V V(BR)CEO IC=25mA 50min V
ø3.3±0.2
IC 3 A hFE VCE=4V, IC=0.5A 500min a

0.8±0.2
b
IB 1 A VCE(sat) IC=1A, IB=20mA 0.5max V
PC 25(Tc=25°C) W fT VCE=12V, IE=–0.1A 40typ MHz

±0.2
3.9
13.0min
Tj 150 °C COB VCB=10V,f=1MHz 30typ pF 1.35±0.15

Tstg 1.35±0.15
–55 to +150 °C
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
■Typical Switching Characteristics (Common Emitter) 2.2±0.2

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Type No.
B C E
20 20 1 10 –5 15 –30 0.45typ 1.60typ 0.85typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sa t ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)


(V CE =4V)
Collector-Emitter Saturation Voltage V C E (s at) (V )

3 1.5 3
A A
3 0m 1 8m
A
12m
2.5
8mA

Collector Current I C (A)


Collector Current I C (A)

2 1 2
5m A

3mA 1.5
2mA

Temp)
p)
Tem
mp)
1 0.5 3A 1

e Te
se
1mA

(Case
(Ca
(Cas
I B =0.5mA 2A

˚C

–55˚C
0.5
125

25˚C
I C =1A

0 0 0
0 1 2 3 4 5 6 1 10 100 1000 0 0.5 1 1.5
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics


θ j- a ( ˚C/W)

(V C E =4V) (V C E =4V)
3000 5000 7
125˚C
Typ 25˚C 5
DC Cur rent Gain h FE

D C Cur r ent Gai n h FE

Transient Thermal Resistance

1000 1000 –55˚C

500
500

100

50

100 20 1
0.01 0.1 0.5 1 3 0.01 0.1 0.5 1 3 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating


(V C E =12V)
60 10 30
Natural Cooling
Silicone Grease
5 1m
Heatsink: Aluminum
M aximum Power Dissipa tion P C (W)

s
10 in mm
m
Cu t-off Fre quen cy f T ( MH Z )

s
Typ
Collect or Cur ren t I C (A)

10

40 DC 20
0m

W
s

ith
1 In
fin
ite
150x150x2
0.5 he
1 00x 1 0 at
0x si
20 2 nk
10
Without Heatsink
50x50x2
Natural Cooling
0.1
Without Heatsink
2
0 0.05 0
–0.005 –0.01 –0.1 –1 3 5 10 50 100 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

109

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