2SK4107

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS VI)

2SK4107
Switching Regulator Applications
Low drainsource ON resistance Low leakage current Enhancement mode : RDS (ON) = 0. 33 (typ.) Unit: mm

High forward transfer admittance : |Yfs| = 8.5 S (typ.) : IDSS = 100 A (max) (VDS = 500 V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25C)

Characteristic Drainsource voltage Draingate voltage (RGS = 20 k) Gatesource voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 30 15 60 150 765 15 15 150 55~150 Unit V V V A A W mJ A mJ C C 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE

Pulse (Note 1)

Drain power dissipation (Tc = 25C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range

JEDEC JEITA TOSHIBA

2-16C1B

Weight: 4.6 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics
Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (chc) Rth (cha) Max 0.833 50 Unit C/W C/W

Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: VDD = 90 V, Tch = 25C (initial), L = 5.78 mH, RG = 25 , IAR = 15 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care.

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2SK4107
Electrical Characteristics (Ta = 25C)
Characteristic Gate leakage current Gatesource breakdown voltage Drain cutoff current Drainsource breakdown voltage Gate threshold voltage Drainsource ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton tf toff Qg Qgs Qgd VDD 400 V, VGS = 10 V, ID = 15 A VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V IG = 10 A, VDS = 0 V VDS = 500 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 7.0 A VDS = 10 V, ID = 7.0 A Min 30 500 2.0 4.0 Typ. 0.33 8.5 2450 15 220 50 Max 10 100 4.0 0.4 pF Unit A V A V V S

Turn-on time Switching time Fall time

90

ns

45

Turn-off time Total gate charge (gatesource plus gatedrain) Gatesource charge Gatedrain (Miller) charge

175 48 26 22

nC

SourceDrain Ratings and Characteristics (Ta = 25C)

Characteristic Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 15 A, VGS = 0 V IDR = 15 A, VGS = 0 V dIDR / dt = 100 A / s Min Typ. 1050 13 Max 15 60 1.7 Unit A A V ns C

Marking

TOSHIBA

K4107

Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.

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2SK4107

ID VDS
10 Common source Tc = 25C Pulse test 10 8 6 20 10

ID VDS
Common source Tc = 25C Pulse test

16

(A)

ID

6 5.25 4 5 2 4.75 4.5 VGS = 4 V 0 0 1 2 3 4 5

ID

(A)
12

6 5.75

Drain current

Drain current

8 5.5 5.25 4 5 4.75 4.5 0 0 10 20 30 VGS = 4 V 40 50

Drainsource voltage

VDS

(V)

Drainsource voltage

VDS

(V)

ID VGS
50

VDS VGS
10 Tc = 55C

40

VDS (V)

Common source VDS = 20 V Pulse test

Common source Tc = 25C Pulse test

(A)

25 30 100 20

ID

Drainsource voltage

6 15 4 8 2 ID = 4 A

Drain current

10

10

12

16

20

Gatesource voltage

VGS

(V)

Gatesource voltage

VGS

(V)

Yfs ID (S)
100 1 Common source VDS = 20 V Pulse test Common source Tc = 25C Pulse test

RDS (ON) ID

Yfs

Forward transfer admittance

Tc = 55C 25 10 100

Drainsource ON resistance RDS (ON) ()

VGS = 10 V

15

1 1

10

100

0.1 0.1

10

100

Drain current

ID

(A)

Drain current

ID

(A)

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RDS (ON) Tc
1.0

IDR VDS
100

Drainsource ON resistance RDS (ON) ()

0.8

IDR (A)

Common source VGS = 10 V Pulse test

Common source Tc = 25C Pulse test

0.6 ID = 15 A 0.4 8 4 0.2

Drain reverse current

10

10 5 3 1 VGS = 0, 1 V 0.6 0.8 1.0 1.2

0 80

40

40

80

120

160

0.1 0

0.2

0.4

Case temperature

Tc

(C)

Drainsource voltage

VDS (V)

Capacitance VDS
10000 5 Ciss

Vth Tc Vth (V) Gate threshold voltage

(pF)

1000 3

Capacitance

Coss

100 Common source VGS = 0 V f = 1 MHz Tc = 25C 10 0.1 1 10

Crss 100

0 80

Common source VDS = 10 V ID = 1 mA Pulse test 40 0 40 80 120 160

Drainsource voltage

VDS

(V)

Case temperature

Tc

(C)

PD Tc
200 500

Dynamic input/output characteristics VDS (V)

Common source ID = 15 A Tc = 25C Pulse test VDS 20

150

400

400

16

Drain power dissipation

Drainsource voltage

100

200

200

200

50

100

VGS VDS = 100 V

0 0 40 80 120 160 200

20

40

60

80

0 100

Case temperature Tc (C)

Total gate charge

Qg (nC)

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Gatesource voltage

300

VDS = 100 V

400

12

VGS (V)

PD (W)

2SK4107

SAFE OPERATING AREA

1000 1000

EAS Tch

100

ID max (continuous) 100 s * ID max (pulse) *

EAS (mJ) Avalanche energy

1000

800

Drain current ID (A)

10

1 ms *

DC OPERATION Tc = 25C

600

1 * Single pulse Ta = 25 0.1 Curves must be derated linearly with increase in temperature. 0.01 1 10 100

400

200

VDSS max 0 25 50 75 100 125 150

Drain-source voltage

VDS (V)

Channel temperature (initial)

Tch (C)

15 V 15 V

BVDSS IAR VDD Test circuit Waveform VDS

RG = 25 VDD = 90 V, L = 5.78 mH

AS =

1 B VDSS L I2 B 2 VDSS VDD

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RESTRICTIONS ON PRODUCT USE

The information contained herein is subject to change without notice.

20070701-EN

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customers own risk. The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.

2007-02-22