Basic Electronics Engineering

Semester I & II
First Year Engineering Common to All Branches
As per the new revised syllabus of SSPU. w.e.f. academic year 2012-2013

Prof. S. R. Deshpande
Ph.D. (Pursuing), M.E., B.E.(Ind. Elect.)
Head Engineering Science & FE
Sinhgad Institute of Technology & Science, Narhe, Pune

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Basic Electronics Engineering
First Year Engineering Common to All Branches
As per new revised syllabus of SPPU w.e.f. academic year 2012-2013
Prof. S. R. Deshpande
First Edition : July 2017
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 PREFACE TO THE FIRST EDITION
I am very glad to offer the book of 'Basic Electronics Engineering' for the
students of first year degree courses in Engineering of Savitribai Phule Pune
University.
The University has revised Syllabi of FE in 2015. The university has
introduced Online examination system
As per the new structure, two online examinations will be conducted at the
end of first month and second month in the first semester. First online
examination will be based on first and second units and second examination
will cover third and fourth units. Both the online examinations will have
objective type of questions with multiple choices, End semester examination
will be based on all the six units and that will be conducted in a traditional way.
This text book is written, taking into account new syllabus and all the new
aspects that have been introduced in it. New students to the engineering field
will definitely find this book, complete in all respects. Students will find the
subject matter presentation quite attracttive. Addition of multiple choice
questions will be very useful to students for practice of online examinations.
I take this opportunity to express my regards to Dr. A. V. Deshpande
(Director, Sinhgad Institutes), Dr. S. N, Mali (Principal, SITS, Narhe) and Dr. P. M,
Patil (Professor, JSPM, Hadapsar, Pune) for continuous encouragement to write
this book. I also thank Prof. Mukesh Patil (SITS, Narhe) for his valuable help in
creating this text book.
I also express my sincere thanks to Gigatech Publishing House (GPH) for
publishing this book in time.
I have no doubt that student's community will respond positively to the
new book.
The advice and recommendations of our respected readers to improve the
contents will be highly valued.

July 2017 Author

PUNE
 SYLLABUS
Unit 1 : Diode Circuits (6 Hours)
Half wave rectifiers, Full wave rectifiers, Power supply filters and Capacitor filters, Diode
limiting (Clippers) and Clamping circuits, Voltage multipliers, Zener diode and its applications,
LEDs and Photodiodes.
Unit 2 : Bipolar Junction Transistor (BJT) Circuits (6 Hours)
BJT Structure and its operation with normal biasing, Transistor characteristics and parameters,
DC operating point, Transistor as an amplifier, Transistor as a switch, Enhancement-type
MOSFET.
Unit 3 : Linear Integrated Circuits (6 Hours)
Introduction to operational amplifiers, Op-amp input modes and parameters, Negative
feedback. Op-amp with negative feedback, Comparators, Summing amplifiers, Integrators
and Differentiators. IC 555 timer as an oscillator, Voltage regulation, IC voltage regulators
(Three pin).
Unit 4 : Digital Electronics (6 Hours)
Introduction, Digital signals, Basic digital circuits-AND, OR, NOT, NAND, NOR, EX-OR,
Standard nd representation for logic functions, Half adder, Boolean algebra, Examples of IC
gates, Full adder, Multiplexers, De-multiplexer, Flip-flops, 1-bit memory cell, D flip-flop, Shift
registers, Counters, Block diagram of Microprocessor and Microcontroller and their
applications.
Unit 5 : Industrial Electronics (7 Hours)
Power Devices : Basics of 4-layer devices : Silicon Controlled Rectifier (SCR), Diac and Triac.
Transducers : Introduction, Electrical transducer, Selecting a transducer, Resistive transducer,
Thermistor, Inductive transducer, Linear Variable Differential Transducer (LVDT), Load cell,
Phototransistor, Temperature transducers, Flow measurement (Mechanical transducers)
Application of transducers : Digital Thermometer, Weighing machine (Block diagrams).
Unit 6 : Electronic Communication (7 Hours)
Importance of Communication System, The elements of a Communication System,
Bandwidth requirement, IEEE frequency spectrum, Transmission media: Wired (Twisted pair,
Coaxial and Optical fiber Cables) and Wireless, Need for modulation, Analog modulation
schemes AM and FM, Mobile communication system: Cellular concept, Simple block diagram
of GSM system.

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CONTENTS
1. DIODE CIRCUITS 1.1 – 1.78
1.1 Diode Fundamentals
1.1.1 Classification of Materials
1.1.2 The Energy Band Theory
1.1.3 Classification of Materials Based on Energy Gap (EG)
1.1.4 Effect of Temperature on Conduction of Semiconductors (Intrinsic)
1.2 P-N Junction and Its Characteristics
1.2.1 P-N Junction Diode
1.2.2 Biasing of a Diode
1.2.3 Forward V-I Characteristic of P-N Junction Diode
1.2.4 Forward Resistance of Diode
1.2.5 P-N Junction Diode in Reverse Biased Mode
1.2.6 Breakdown in a Reverse Biased Diode
1.3 Reverse Characteristics of Diode
1.3.1 Reverse Resistance of Diode
1.4 V-I Characteristics of the Typical Silicon and Germanium Diodes
1.4.1 Diode Current Equation
1.4.2 Effect of Temperature on V-I Characteristics
1.5 Types of Diode Rectifier
1.5.1 The Half-Wave Rectifier
1.5.2 Detail Analysis of Half-Wave Rectifier
1.5.2.1 DC or Average Load Current (IL dc)
1.5.2.2 DC or Average Load Voltage (VL dc)
1.5.2.3 AC or RMS Value of the Load Current (IL rms)
1.5.2.4 AC or RMS Value of Load Voltage (VL rms)
1.5.2.5 Ripple Factor (r)
1.5.2.6 Voltage Regulation
1.5.2.7 DC Output Power (PL dc)
1.5.2.8 AC Input Power (Pac)
1.5.2.9 Rectification Efficiency
1.5.2.10 (TUF) Transformer Utilization Factor
1.5.2.11 PIV (Peak Inverse Voltage)
1.6 The Full-Wave Rectifier
1.6.1 Detail Analysis of Full-Wave (center-tapped) Rectifier
1.6.1.1 Average Load Current (IL dc)
1.6.1.2 Average Load Voltage (VL dc)
1.6.1.3 RMS Load Current (IL rms)
1.6.1.4 RMS Load Voltage (VL rms)
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1.6.1.5 Ripple Factor (r)

1.6.1.6 DC Output Power (PL dc)
1.6.1.7 AC Input Power (Pac)
1.6.1.8 Rectifier Efficiency
1.6.1.9 Transformer Utilization Factor (TUF)
1.6.1.10 PIV (Peak Inverse Voltage)
1.6.1.11 Voltage Regulation
1.7 The Full-Wave Bridge Rectifier
1.7.1 Detail Analysis of Bridge Rectifier
1.8 Comparison of Three Rectifier Circuits
(HWR, FWR, and Bridge Rectifier)
1.9 Types of Rectifier Filters
1.9.1 Half-Wave Rectifier With Capacitor Filter
1.9.2 Full-Wave Rectifier with Capacitor Filter
1.9.3 Bridge Rectifier with Capacitor Filter
1.9.4 Surge Currents in Capacitor Filter
1.10 Clipping Clamping Circuit
1.10.1 Clipper Circuits
1.10.2 Positive Clipper
1.10.3 Negative Clipper
1.10.4 Biased Clipper
1.10.4.1 Positive Clipper using VBIAS
1.10.4.2 Negative Clipper using VBIAS
1.10.4.3 Diode Clipper Implemented with the Help of Voltage
Divider Bias
1.10.5 Diode Clampers
1.10.5.1 Positive Clamper
1.10.5.2 Negative Clamper
1.11 Voltage Multipliers
1.12 Zener Diode
1.12.1 V-I Characteristic of the Zener Diode
1.12.2 Equivalent Circuit of a Zener Diode
1.12.3 Breakdown Mechanism of Zener Diode
1.12.4 Zener Diode Vs Avalanche Diode
1.12.5 Zener Shunt Voltage Regulator
1.12.6 The Regulating action in Zener Shunt Regulator with Varying Input
Voltage (RL Constant)
1.12.7 Regulating Action with Varying Load (Keeping Vin Constant)
1.12.8 The Limitations of Zener Regulator
1.13 Comparison of Rectifier and Regulator
1.14 LED (Light Emitting Diodes) Device Structure
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1.14.1 Construction of LED

1.14.2 Colours and Materials
1.14.3 The Characteristic of LED
1.15 Photodiode
1.15.1 Characteristics of Photodiode
 Descriptive Questions
 Multiple Choice Questions (MCQs)
2. TRANSISTORS CIRCUITS 2.1 – 2.44
2.1 Introduction
2.2 Features of Bipolar Junction Transistor (BJT)
2.3 Construction of Bipolar Junction Transistor (BJT)
2.3.1 Transistor Analogy by Two Diodes
2.3.2 An Unbiased Transistor
2.3.3 Biasing of a Transistor
2.4 Working of N-P-N Transistor in Active Region
2.5 Working of P-N-P Transistor in Active Region
2.6 Conventional Current Directions in the N-P-N and P-N-P Transistors
2.7 Configurations Of BJT
2.8 Common Base Configuration
2.8.1 Input Characteristics of Common Base Configuration
2.8.2 Output Characteristics in CB Configuration
2.9 Common Emitter Configuration
2.9.1 Input Characteristics of Common Emitter Configuration
2.9.2 Output Characteristics in CE Configuration
2.10 Relationship Between dc and dc
2.11 Common Collector Configuration
2.11.1 Input Characteristics of C-C Configuration
2.11.2 Output Characteristics of C-C Configuration
2.12 Comparison of CB, CE and CC Configurations
2.13 Why CE Configuration is Widely Preferred?
2.14 Transistor Biasing and DC Analysis
2.14.1 The D.C. Operating Point and D.C. Load Line
2.15 Selection of Operating Point
2.16 Important Conditions for Biasing
2.17 Bias Stabilization
2.17.1 Fixed Bias
2.17.2 Self Bias or Voltage Divider Bias
2.18 Transistor as an Amplifier
2.18.1 Single stage BJT Amplifier
2.19 BJT as a Switch

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2.20 FET (Field Effect Transistor)

2.20.1 Classification of FET
2.21 MOSFET
2.22 Enhancement MOSFET (EMOSFET)
2.22.1 Construction of EMOSFET
2.22.2 Characteristics of N-channel EMOSFET
2.23 P-Channel EMOSFET
2.24 MOSFET as a Switch
 Descriptive Questions
 Multiple Choice Questions (MCQs)
3. LINEAR INTEGRATED CIRCUITS 3.1 – 3.50
3.1 Introduction
3.2 Op-Amp Symbol
3.3 Op-Amp IC 741
3.3.1 Power Supply Connections
3.4 Block Diagram of a Typical Op-Amp
3.5 OP-Amp Input Modes
3.6 The Ideal OP-Amp
3.6.1 Practical Op-Amp
3.7 Equivalent Circuit of an Op-Amp
3.8 Voltage Transfer Curves of an Op-Amp
3.9 Parameters of Practical Op-Amp
3.10 Open-Loop Configuration of an Op-Amp
3.11 Concept of Feedback
3.11.1 Negative and Positive Feedback
3.11.2 Closed Loop Configuration of Op-Amp
3.12 Inverting Amplifier
3.12.1 Virtual Ground
3.12.2 Analysis of Inverting Amplifier Circuit
3.13 Non-Inverting Amplifier
3.14 Voltage Follower (Unity Gain Buffer)
3.15 Comparator
3.15.1 Zero Level Detection
3.15.2 Non-zero Level Detection
3.15.3 Regenerative Comparator (Schmitt Trigger)
3.15.4 Output Bounding
3.16 Summing Amplifier
3.16.1 Inverting Summing Amplifier
3.16.2 Non-Inverting Summing Amplifier
3.16.3 Inverting Averaging Amplifier

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3.17 Difference Amplifier

3.18 Differentiator
3.18.1 Practical Differentiator
3.19 Integrator
3.19.1 Practical Integrator
3.20 IC 555 Timer
3.20.1 Astable Multivibrator
3.20.2 Voltage Controlled Oscillator
3.21 Voltage Regulation
3.21.1 Line Regulation
3.21.2 Load Regulation
3.21.3 IC Voltage Regulator
 Descriptive Questions
 Multiple Choice Questions (MCQs)
4. DIGITAL ELECTRONICS 4.1 – 4.41
4.1 Introduction
4.2 Concept of Positive And Negative Logic
4.3 Basic Digital Circuits
4.4 Boolean Algebra
4.4.1 De-Morgan’s Theorems
4.4.1.1 De-Morgan’s First Theorem
4.4.1.2 De-Morgan’s Second Theorem
4.5 Universal Gates
4.5.1 NAND as a Universal Gate
4.5.2 NOR as a Universal Gate
4.6 Standard Representation of Logic Function
4.6.1 Minterm and Maxterm
4.7 Adders
4.7.1 Half- adder
4.7.2 Full-Adder
4.7.2.1 Full-Adder Circuit
4.7.3 Full-Adder Circuit using Half-Adder
4.8 Multiplexer [MUX]
4.8.1 2 : 1 Multiplexer
4.8.2 4 : 1 Multiplexer
4.8.3 8 : 1 Multiplexer
4.9 Demultiplexer [Demux]
4.9.1 1 : 8 Demultiplexer
4.10 Flip-Flop
4.10.1 T Flip-Flop
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4.11 Registers
4.12 Shift Register
4.12.1 Serial-In, Serial-Out (SISO) Shift Register
4.12.2 Serial-In, Parallel-Out (SIPO) Shift Register
4.12.3 Parallel-In, Serial-Out (PISO) Shift Register
4.12.4 Parallel-In, Parallel-Out (PIPO) Shift Register
4.13 Counters
4.13.1 Asynchronous Counters/Ripple Counters
4.13.2 Synchronous Counters
4.13.3 Difference Between Synchronous and Asynchronous Counters
4.14 Microprocessor
4.15 Microcontroller
4.16 Comparison between Microprocessor and Microcontroller
 Descriptive Questions
 Multiple Choice Questions (MCQs)
5. INDUSTRIAL ELECTRONICS 5.1 – 5.44
5.1 SCR (Silicon Controlled Rectifier or Thyristor)
5.1.1 Operation of SCR
5.1.2 Characteristics of SCR
5.1.3 Forward Characteristics
5.1.4 Reverse Characteristics
5.1.5 Two Transistor Analogy
5.1.6 Specifications of SCR
5.2 DIAC
5.3 TRIAC
5.3.1 Triggering Modes of TRIAC
5.4 Introduction
5.5 Measurement System (Instrumentation System)
5.6 Transducer
5.7 Classification of Transducers
5.7.1 Passive or Active Transducers
5.7.2 Comparison between Passive and Active Transducers
5.7.3 Primary or Secondary Transducers
5.7.4 Analog or Digital Transducers
5.8 Selection Criteria for Transducer
5.9 Resistive transducer
5.9.1 Potentiometer
5.9.2 Strain Gauge
5.9.3 Bonded Strain Gauge
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5.9.4 Unbonded Strain Gauge

5.10 Temperature Measurement
5.10.1 Resistance Temperature Detector (RTD)
5.10.2 Construction of RTD
5.10.3 Measurement using RTD
5.10.4 Thermistor
5.10.5 Temperature Measurement using Thermistor
5.10.6 Thermocouple
5.10.7 Types of Materials used for Thermocouples
5.10.8 Laws of Thermoelectric Circuit
5.10.9 Comparison of Temperature Transducers
5.11 Inductive Transducer
5.11.1 Inductive Transducer Based on Change Number of Turns
5.11.2 Transducer based on Change in Self Inductance with
Change in Permeability
5.11.3 Variable Reluctance Type Transducer
5.12 Linear Variable Differential Transformer (LVDT) (Inductive Type)
5.13 Load Cell (Pressure Cell)
5.14 Phototransistor
5.15 Flow Measurement
5.16 Digital Thermometer
5.17 Electronic Weighing Machine
 Descriptive Questions
6. ELECTRONIC COMMUNICATION 6.1 – 6.50
6.1 Introduction
6.1.1 Block Diagram of Communication System
6.2 Classification of Communication System
6.2.1 Analog Communication
6.2.2 Digital Communication
6.3 Baseband Transmission Systems
6.4 IEEE Frequency Spectrum / Electromagnetic Spectrum
6.4.1 Radio Frequency Spectrum and its Applications
6.5 Modulation Techniques
6.5.1 Necessity of Modulation (Need for Modulation)
6.5.2 Types of Modulation
6.6 Amplitude Modulation
6.6.1 Mathematical Representation of AM Wave
6.6.2 Modulation Index (M)
6.6.3 Concept of Over Modulation
6.6.4 Trapezoidal Display Method to Calculate Modulation Index
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6.6.5 Frequency Spectrum of the AM Wave

6.6.6 Average Power for Sinusoidal AM
6.7 Frequency Modulation
6.7.1 Modulation Index in FM
6.7.2 Number of Sidebands
6.7.3 Deviation Ratio
6.7.4 Percentage Modulation of FM
6.7.5 Mathematical Representation of FM
6.7.6 Comparison of AM and FM
6.8 Communication Channel or Medium
6.8.1 Transmission Lines
6.8.2 Parallel Wires Transmission Line
6.8.2.1 Two-Wire Line Type
6.8.1.2 Two-Wire Ribbon Type
6.8.3 Twisted Pair Cables
6.8.4 Coaxial Cable
6.8.5 Fibre Optic Cable
6.8.6 Comparison of Wired Media
6.9 Wireless Media
6.10 Mobile Communication
6.11 Global System of Mobile Communication
 Descriptive Questions

SAMPLE QUESTION BANK S.1 – S.3

MCQ’S 1 – 87

SOLVED UNIVERSITY EXAMINATION QUESTION PAPERS (MAY-2017) Q.1 – Q.22

SOLVED UNIVERSITY EXAMINATION QUESTION PAPERS (DEC-2015) Q.1 – Q.25

UNIVERSITY EXAMINATION QUESTION PAPERS Q.1 – Q.12

(DEC. 2012, DEC. 2013, DEC. 2014, DEC. 2016
JUNE 2013, JUNE 2014)

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 Unit
1
Diode Circuits

: Syllabus :
Half wave rectifiers, Full wave rectifiers, Power supply filters and Capacitor filters,
Diode limiting (Clippers) and Clamping circuits, Voltage multipliers, Zener diode and its
applications, LEDs and Photodiodes.

1.1 Diode Fundamentals

1.1.1 Classification of Materials
 Materials can be classified in many ways. Here we shall consider the property of
conduction of electricity for classification of materials. Some materials like copper,
aluminium, silver etc. are good conductors of electricity, whereas materials such as
plastic, rubber, wood etc. are bad conductors of electricity. They are called insulators.
 Also, there are some materials, like Silicon and Germanium, whose conductivity lies
between conductors and insulators. Such materials are called semiconductors.
These materials have 4 electrons in the outermost shell of their atomic structure.
These four electrons are called valance electrons. They form a bond with another
valence electron of the neighbouring atom. These bonds are called covalent bonds.
The energy levels associated with the valance electrons merge into each other. This
merging forms a valance band.

1.1.2 The Energy Band Theory

 Energy band diagrams for conductors, insulators and semiconductors are as shown
below in Fig. 1.1.

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(a) Conductor (b) Insulator (c) Semiconductor

Fig. 1.1
 The energy band formed due to merging of energy levels associated with the free
electrons is called as the conduction band.
 When the valance electron gets energy, it jumps from the valance band to the
conduction band and becomes free. While jumping it has to cross the energy gap
(EG).
 The energy gap is the gap separating the valance band and the conduction band and
is called the forbidden gap.

1.1.3 Classification of Materials Based on Energy Gap (EG)

 Conductors: As shown in Fig.1.1, in conductors like copper, aluminium etc. the
valance band and the conduction band overlap and there are large number of
electrons available for conduction at room temperature.
 Insulators: As shown in Fig. 1.1, in insulators like plastic, wood etc. there is a large
forbidden gap (approx. 6 eV) between the valance band and conduction band and so
these materials cannot conduct the electricity.
 Semiconductors: As shown in Fig. 1.1, in semiconductors the forbidden gap is much
smaller (approx. 1 eV) than insulators. At absolute zero temperature, these materials
behave as perfect insulators. But at room temperature, the value of EG is 0.72 eV for
Germanium and 1.12 eV for Silicon. As the temperature increases, these materials
can conduct heavily.

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 Basic Electronics Engineering
Semester I And II (Common for all
branches)

Publisher : Gigatech Publishing

ISBN : 9788193414002 Author : S R Deshpande
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