Magnetoresistance of Bismuth
Magnetoresistance of Bismuth
SYMBOLS
Table 1 lists safety and electrical symbols that appear on the Instrument or in this manual.
Table 1. Safety and Electrical Symbols
RANGE
CURRENT X1 X10
ON
20mA 200mA
OUTPUT ON
DIGITAL MICROVOLTMETER
Model : DMV-001 Display Panel
Hall Probe
Range InAs
Magnetising Current
1 mV
Selector 10 mV
Switch RANGE 100 mV CONSTANT CURRENT POWER SUPPLY
ZERO ADJ Current Display
1V Model : DPS-175M
10 V Selector Switch Fuse
ON
A
Up Down
COIL1 COIL2
COIL1 COIL2
ON
Magnetoresistance
Probe
Bismuth Mains ON/
Sample Black OFF Switch
Red
Red
Black
INTRODUCTION
It is noticed that the resistance of a sample changes when the magnetic field is turned
on. The Magneto-resistance is the property of a material to change the value of its electrical
resistance when an external magnetic field is applied to it. The effect was first discovered by
William Thomson (more commonly known as Lord Kelvin) in 1856. The magnitude of the
effect is quite low only about 1% at room temperature, but goes to about 50% at low
temperatures in giant magneto resistive multilayer structures. More recently effects of more
than 95% change in resistivity have been discovered in some perovskite systems.
Magneto-resistance, is due to the fact that the drift velocity of all the carriers is not
same. With the magnetic field on; the Hall voltage V = E y t = v x H compensates exactly the
Lorentz force for carriers with average velocity; slower carriers will be over compensated and
faster ones undercompensated, resulting in trajectories that are not along the applied field.
This results in an effective decrease of the mean free path and hence an increase in resistivity.
Here the above referred symbols are defined as: v = drift velocity; E = applied electric field; t
= thickness of the crystal; H = Magnetic field
The change in resistivity, Δρ, is positive for both magnetic field parallel (Δρll) and
transverse (ΔρT) to the current direction with ρT> ρll. There are three distinct cases of ordinary
magnetoresistance, depending on the structure of the electron orbitals at the Fermi surface:
1. In metals with closed Fermi surfaces, the electrons are constrained to their orbit in k-
space and the effect of the magnetic field is to increase the cyclotron frequency of the
electron in its closed orbit.
2. For metals with equal numbers of electrons and holes, the magnetoresistance increases
with H up to the highest fields measured and is independent of crystallographic
orientation. Bismuth falls in this class.
3. Metals that contain Fermi surfaces with open orbits in some crystallographic directions
will exhibit large magnetoresistance for fields applied in those directions, whereas the
resistance will saturate in other directions, where the orbits are closed.
APPARATUS
(2) Sample
Bismuth dimensions : 10 x 10 x 1.2mm.
Controls
(1) Range Switch – The current meter can be switched between 20mA and 200mA
range using this switch. Keep the range switch at the desired range and set the
desired current using the current control knob. In case the meter shows over ranging
(sign of 1 on the left and all other digits goes blank) range switch maybe shifted to
higher range.
(2) Panel Meter – Display the current in mA.
(3) Current Control – This is to feed the desired current in the Sample.
(4) Current Output – Connect suitable connector from Four probe Arrangement in this
connector. This will enable the unit to feed desired current in the sample
(5) ON-OFF switch – To power the unit ON/ OFF
Quinck's Tube Hall Probe Holder
Poistioning Arm
Holder (Fixed on Hall
Probe mount)
Main Arm
Holding Nut
Tightning Nut
Base
1. Set approximate position of the positioning arm and lock the same using Positioning Nut.
2. To measure the magnetic field of the electromagnet take out the Hall Probe (InAs) from the jacket/
compartment of Gaussmeter and push back the SS cover.
3. Push the SS tube part of the InAs probe in InAs holder of multipurpose stand.
4. Position the sensor tip of the Hall Probe in center of Pole Peices and lock the positioning arm using
positioning nut.
5. After taking the reading replace the InAs probe in its jacket/ compartment.
6. To fix the Quinck's Tube holder, screw the Quinck's Tube holder in the holding nut kepping the tightning nut
loose.
7. Once the holding nut can be turned no more, tighten the tightning nut to lock position of Quinck's Tube
holder.
8. Similarly if any other Hall Probe is to be used in place of Quinck's Tube holder, tighten the Hall Probe Holder
as per step 6 & 7.
5. Electromagnet, EMU-75
Field intensity : 11,000 ± 5% gauss in an air-gap of 10 mm. Air-gap is
continuously variable upto 100 mm with two way
knobbed wheel screw adjusting system.
Pole pieces : 75 mm diameter. Normally flat faced pole pieces are
supplied with the magnet
Energising coils : Two. Each coil is wound on non-magnetic formers and
has a resistance of 12 ohms approx.
Yoke material : Mild steel
Power requirement : 0 - 100 V @ 3.5 A if connected in series.
0 - 50 V @ 7.0 A if connected in parallel
Top View Top View
Red
Red
PROCEDURE
(I) Calibration of applied magnetic field H:
1. Set the pole piece distance of the Electromagnet to nearly 19mm.
2. Now place the Hall probe of Gaussmeter in the magnetic field as shown in Fig.
3(a). Switch on the power supply for electromagnet and set it to maximum (3A).
Rotate the Hall probe till it become perpendicular to magnetic field. Magnetic
field reading on the Gaussmeter will be maximum in this adjustment.
3. Now lower the current from the power supply to minimum. Record the magnetic
field reading on Gaussmeter by slowly varying the current.
4. Switch of the supply once you are done.
5. Plot a graph for calibration.
(II) Data for magneto resistance of n-Ge and Bi:
6. Next unscrew the screws given at the top of magneto-resistance probe to lower
the base plate. Put n-Ge sample on the base plate of the four probe arrangement.
Slowly screw both screws evenly to apply a very gentle pressure on the four
spring probes. Check the continuity between the probes for proper electrical
contacts.
CAUTION: The sample is quite brittle. Therefore, use only the minimum
pressure required for proper electrical contacts.
7. Place the magneto-resistance probe in the magnetic field as shown in Fig. 3b.
8. Connect the outer pair of probes to the CCS-01 terminals and the inner pair of the
probes to DMV-001 terminals.
9. Switch on the mains supply of both CCS-01 and DMV-001. Adjust the current to
a desired value (Say 190mA for Bi).
10. Now the DMV-001 would be reading the voltage between the probes. Adjust the
range knob as required.
11. Calculate the resistance (R) of the sample in absence of magnetic field.
12. Now switch on the electromagnet power supply and set it to maximum (3A).
Rotate the magneto-resistance probe till it become perpendicular to magnetic
field. Voltage will be maximum in this adjustment.
13. Vary the magnetic field by varying the current of DPS-175 step by step and
record the corresponding voltage reading. Determine the resistance (Rm) in
presence of magnetic field and calculate ΔR (= Rm-R)
14. Plot a graph for (ΔR/R) ~ H or log(ΔR/R)~ log H for each sample.
OBSERVATIONS
Table 1
Log (ΔR/R)
S.No Current (A) Mag. Field Voltage Rm (Ω) ΔR/R Log (H)
H (kG) Vm (mV)
Graphs:
12.0
11.0
10.0
9.0
8.0
7.0
6.0
5.0
Magnetic Field (KG)
4.0
3.0
2.0
1.0
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0
Current (A)
240
230
220
210
200
190
180
170
160
150
∆ R/R x 10-3
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
Magnetic Field (KG)