LT3757

1
3757fb
n
Wide Input Voltage Range: 2.9V to 40V
n
Positive or Negative Output Voltage Programming
with a Single Feedback Pin
n
CurrentModeControlProvidesExcellentTransient
Response
n
ProgrammableOperatingFrequency(100kHzto
1MHz)withOneExternalResistor
n
SynchronizabletoanExternalClock
n
LowShutdownCurrent<1A
n
Internal7.2VLowDropoutVoltageRegulator
n
ProgrammableInputUndervoltageLockoutwith
Hysteresis
n
ProgrammableSoft-Start
n
Small10-LeadDFN(3mm3mm)andThermally
Enhanced10-PinMSOPPackages
Typical applicaTion
DescripTion
Boost, Flyback, SEPIC and
Inverting Controller
TheLT

3757isawideinputrange,currentmode,DC/DC
controllerwhichiscapableofgeneratingeitherpositiveor
negativeoutputvoltages.Itcanbeconfiguredaseithera
boost,flyback,SEPICorinvertingconverter.TheLT3757
drivesalowsideexternalN-channelpowerMOSFETfrom
an internal regulated 7.2V supply. The fixed frequency,
current-modearchitectureresultsinstableoperationover
awiderangeofsupplyandoutputvoltages.
The operating frequency of LT3757 can be set with an
externalresistorovera100kHzto1MHzrange,andcan
besynchronizedtoanexternalclockusingtheSYNCpin.
Alowminimumoperatingsupplyvoltageof2.9V,anda
lowshutdownquiescentcurrentoflessthan1A,make
theLT3757ideallysuitedforbattery-operatedsystems.
The LT3757 features soft-start and frequency foldback
functions to limit inductor current during start-up and
outputshort-circuit.
High Efficiency Boost Converter
FeaTures
applicaTions
n
AutomotiveandIndustrialBoost,Flyback,SEPICand
InvertingConverters
n
TelecomPowerSupplies
n
PortableElectronicEquipment
Efficiency
SENSE
LT3757
V
IN
V
IN
8V TO 16V
10F
25V
X5R
V
OUT
24V
2A
0.01
41.2k
300kHz
GATE
FBX
GND INTV
CC
SHDN/UVLO
SYNC
RT
SS
VC
200k
43.2k
0.1F
22k
6.8nF
10H
3757 TA01a
226k
16.2k
4.7F
10V
X5R
10F
25V
X5R
47F
35V
s2
+
OUTPUT CURRENT (A)
0.001
E
F
F
I
C
I
E
N
C
Y

(
%
)
30
50
40
60
70
80
90
100
0.01 0.1 1
3757 TA01b
10
V
IN
= 8V
V
IN
= 16V
L,LT,LTC,LTM,LinearTechnology,theLinearlogoandBurstModeareregisteredtrademarks
andNoR
SENSE
andThinSOTaretrademarksofLinearTechnologyCorporation.Allother
trademarksarethepropertyoftheirrespectiveowners.
LT3757
2
3757fb
pin conFiguraTion
absoluTe MaxiMuM raTings
V
IN
,SHDN/UVLO(Note6).........................................40V
INTV
CC
....................................................V
IN
+0.3V,20V
GATE........................................................ INTV
CC
+0.3V
SYNC..........................................................................8V
VC,SS.........................................................................3V
RT............................................................................ 1.5V
SENSE....................................................................0.3V
FBX................................................................. 6Vto6V
(Note 1)
TOP VIEW
DD PACKAGE
10-LEAD (3mm s 3mm) PLASTIC DFN
10
9
6
7
8
4
5
11
3
2
1 V
IN
SHDN/UVLO
INTV
CC
GATE
SENSE
VC
FBX
SS
RT
SYNC

T
JMAX
=125C,
JA
=43C/W
EXPOSEDPAD(PIN11)ISGND,MUSTBESOLDEREDTOPCB
1
2
3
4
5
VC
FBX
SS
RT
SYNC
10
9
8
7
6
VIN
SHDN/UVLO
INTV
CC
GATE
SENSE
TOP VIEW
MSE PACKAGE
10-LEAD PLASTIC MSOP
11

T
JMAX
=150C,
JA
=40C/W
EXPOSEDPAD(PIN11)ISGND,MUSTBESOLDEREDTOPCB
orDer inForMaTion
LEAD FREE FINISH TAPE AND REEL PART MARKING* PACKAGE DESCRIPTION TEMPERATURE RANGE
LT3757EDD#PBF LT3757EDD#TRPBF LDYW 10-Lead(3mm3mm)PlasticDFN 40Cto125C
LT3757IDD#PBF LT3757IDD#TRPBF LDYW 10-Lead(3mm3mm)PlasticDFN 40Cto125C
LT3757EMSE#PBF LT3757EMSE#TRPBF LTDYX 10-Lead(3mm3mm)PlasticMSOP 40Cto125C
LT3757IMSE#PBF LT3757IMSE#TRPBF LTDYX 10-Lead(3mm3mm)PlasticMSOP 40Cto125C
LT3757HMSE#PBF LT3757HMSE#TRPBF LTDYX 10-Lead(3mm3mm)PlasticMSOP 40Cto150C
LT3757MPMSE#PBF LT3757MPMSE#TRPBF LTDYX 10-Lead(3mm3mm)PlasticMSOP 55Cto125C
ConsultLTCMarketingforpartsspecifiedwithwideroperatingtemperatureranges.*Thetemperaturegradeisidentifiedbyalabelontheshippingcontainer.
Formoreinformationonleadfreepartmarking,goto:http://www.linear.com/leadfree/
Formoreinformationontapeandreelspecifications,goto:http://www.linear.com/tapeandreel/
OperatingTemperatureRange(Notes2,8)
LT3757E............................................. 40Cto125C
LT3757I.............................................. 40Cto125C
LT3757H............................................ 40Cto150C
LT3757MP......................................... 55Cto125C
StorageTemperatureRange
DFN.................................................... 65Cto125C
MSOP................................................ 65Cto150C
LeadTemperature(Soldering,10sec)
MSOP............................................................... 300C
LT3757
3
3757fb
elecTrical characTerisTics The l denotes the specifications which apply over the full operating temp-
erature range, otherwise specifications are at T
A
= 25C. V
IN
= 24V, SHDN/UVLO = 24V, SENSE = 0V, unless otherwise noted.
PARAMETER CONDITIONS MIN TYP MAX UNITS
V
IN
OperatingRange 2.9 40 V
V
IN
ShutdownI
Q
SHDN/UVLO=0V
SHDN/UVLO=1.15V
0.1 1
6
A
A
V
IN
OperatingI
Q
V
C
=0.3V,R
T
=41.2k 1.6 2.2 mA
V
IN
OperatingI
Q
withInternalLDODisabled V
C
=0.3V,R
T
=41.2k,INTV
CC
=7.5V 280 400 A
SENSECurrentLimitThreshold l 100 110 120 mV
SENSEInputBiasCurrent CurrentOutofPin 65 A
Error Amplifier
FBXRegulationVoltage(V
FBX(REG)
) V
FBX
>0V(Note3)
V
FBX
<0V(Note3)
l
l
1.569
0.816
1.6
0.80
1.631
0.784
V
V
FBXOvervoltageLockout V
FBX
>0V(Note4)
V
FBX
<0V(Note4)
6
7
8
11
10
14
%
%
FBXPinInputCurrent V
FBX
=1.6V(Note3)
V
FBX
=0.8V(Note3)

10
70 100
10
nA
nA
Transconductanceg
m
(I
VC
/V
FBX
) (Note3) 230 S
VCOutputImpedance (Note3) 5 M
V
FBX
LineRegulation[V
FBX
/(V
IN
V
FBX(REG)
)] V
FBX
>0V,2.9V<V
IN
<40V(Notes3,7)
V
FBX
<0V,2.9V<V
IN
<40V(Notes3,7)
0.002
0.0025
0.056
0.05
%/ V
%/ V
VCCurrentModeGain(V
VC
/V
SENSE
) 5.5 V/ V
VCSourceCurrent V
FBX
=0V,V
C
=1.5V 15 A
VCSinkCurrent V
FBX
=1.7V
V
FBX
=0.85V
12
11
A
A
Oscillator
SwitchingFrequency R
T
=41.2ktoGND,V
FBX
=1.6V
R
T
=140ktoGND,V
FBX
=1.6V
R
T
=10.5ktoGND,V
FBX
=1.6V
270 300
100
1000
330 kHz
kHz
kHz
RTVoltage V
FBX
=1.6V 1.2 V
MinimumOff-Time 220 ns
MinimumOn-Time 220 ns
SYNCInputLow 0.4 V
SYNCInputHigh 1.5 V
SSPull-UpCurrent SS=0V,CurrentOutofPin 10 A
Low Dropout Regulator
INTV
CC
RegulationVoltage l 7 7.2 7.4 V
INTV
CC
UndervoltageLockoutThreshold FallingINTV
CC

UVLOHysteresis
2.6 2.7
0.1
2.8 V
V
INTV
CC
OvervoltageLockoutThreshold 16 17.5 V
INTV
CC
CurrentLimit V
IN
=40V
V
IN
=15V
30 40
95
55 mA
mA
INTV
CC
LoadRegulation(V
INTVCC
/ V
INTVCC
) 0<I
INTVCC
<20mA,V
IN
=8V 0.9 0.5 %
INTV
CC
LineRegulationV
INTVCC
/ (V
INTVCC
V
IN
) 8V<V
IN
<40V 0.008 0.03 %/V
DropoutVoltage(V
IN
V
INTVCC
) V
IN
=6V,I
INTVCC
=20mA 400 mV
LT3757
4
3757fb
TEMPERATURE (C)
75 50
1580
1585
R
E
G
U
L
A
T
E
D

F
E
E
D
B
A
C
K

V
O
L
T
A
G
E

(
m
V
)
1590
1605
1600
0 50 75
1595
25 25 100 150 125
3757 G01
V
IN
= 40V
V
IN
= 24V
V
IN
= 8V
V
IN
= INTV
CC
= 2.9V
SHDN/UVLO = 1.33V
TEMPERATURE (C)
R
E
G
U
L
A
T
E
D

F
E
E
D
B
A
C
K

V
O
L
T
A
G
E

(
m
V
)
802
800
798
788
790
792
794
804
796
3757 G02
75 50 0 50 75 25 25 100 150 125
V
IN
= 40V
V
IN
= 24V
V
IN
= 8V
V
IN
= INTV
CC
= 2.9V
SHDN/UVLO = 1.33V
Typical perForMance characTerisTics
Positive Feedback Voltage
vs Temperature, V
IN
Negative Feedback Voltage
vs Temperature, V
IN

Quiescent Current
vs Temperature, V
IN
T
A
= 25C, unless otherwise noted.
elecTrical characTerisTics The l denotes the specifications which apply over the full operating temp-
erature range, otherwise specifications are at T
A
= 25C. V
IN
= 24V, SHDN/UVLO = 24V, SENSE = 0V, unless otherwise noted.
PARAMETER CONDITIONS MIN TYP MAX UNITS
INTV
CC
CurrentinShutdown SHDN/UVLO=0V,INTV
CC
=8V 16 A
INTV
CC
VoltagetoBypassInternalLDO 7.5 V
Logic Inputs
SHDN/UVLOThresholdVoltageFalling V
IN
=INTV
CC
=8V l 1.17 1.22 1.27 V
SHDN/UVLOInputLowVoltage I(V
IN
)DropsBelow1A 0.4 V
SHDN/UVLOPinBiasCurrentLow SHDN/UVLO=1.15V 1.7 2 2.5 A
SHDN/UVLOPinBiasCurrentHigh SHDN/UVLO=1.30V 10 100 nA
Gate Driver
t
r
GateDriverOutputRiseTime C
L
=3300pF(Note5),INTV
CC
=7.5V 22 ns
t
f
GateDriverOutputFallTime C
L
=3300pF(Note5),INTV
CC
=7.5V 20 ns
GateV
OL
0.05 V
GateV
OH
INTV
CC

0.05
V
Note 1:StressesbeyondthoselistedunderAbsoluteMaximumRatings
maycausepermanentdamagetothedevice.ExposuretoanyAbsolute
MaximumRatingconditionforextendedperiodsmayaffectdevice
reliabilityandlifetime.
Note 2: TheLT3757Eisguaranteedtomeetperformancespecifications
fromthe0Cto125Cjunctiontemperature.Specificationsoverthe40C
to125Coperatingjunctiontemperaturerangeareassuredbydesign,
characterizationandcorrelationwithstatisticalprocesscontrols.The
LT3757Iisguaranteedoverthefull40Cto125Coperatingjunction
temperaturerange.TheLT3757Hisguaranteedoverthefull40Cto150C
operatingjunctiontemperaturerange.Highjunctiontemperaturesdegrade
operatinglifetimes.Operatinglifetimeisderatedatjunctiontemperatures
greaterthan125C.TheLT3757MPis100%testedandguaranteedoverthe
full55Cto125Coperatingjunctiontemperaturerange.
Note 3:TheLT3757istestedinafeedbackloopwhichservosV
FBX
tothe
referencevoltages(1.6Vand0.8V)withtheVCpinforcedto1.3V.
Note 4:FBXovervoltagelockoutismeasuredatV
FBX(OVERVOLTAGE)
relative
toregulatedV
FBX(REG)
.
Note 5:Riseandfalltimesaremeasuredat10%and90%levels.
Note 6:ForV
IN
below6V,theSHDN/UVLOpinmustnotexceedV
IN
.
Note 7:SHDN/UVLO=1.33VwhenV
IN
=2.9V.
Note 8:TheLT3757includesovertemperatureprotectionthatisintended
toprotectthedeviceduringmomentaryoverloadconditions.Junction
temperaturewillexceedthemaximumoperatingjunctiontemperature
whenovertemperatureprotectionisactive.Continuousoperationabove
thespecifiedmaximumoperatingjunctiontemperaturemayimpairdevice
reliability.
75 50 0 50 75 25 25 100 150 125
TEMPERATURE (C)
1.4
Q
U
I
E
S
C
E
N
T

C
U
R
R
E
N
T

(
m
A
)
1.6
1.8
1.5
1.7
3757 G03
V
IN
= 40V
V
IN
= 24V
V
IN
= INTV
CC
= 2.9V
LT3757
5
3757fb
Typical perForMance characTerisTics
Switching Frequency
vs Temperature
SENSE Current Limit Threshold
vs Temperature
SENSE Current Limit Threshold
vs Duty Cycle
SHDN/UVLO Threshold
vs Temperature SHDN/UVLO Current vs Voltage
SHDN/UVLO Hysteresis Current
vs Temperature
Dynamic Quiescent Current
vs Switching Frequency R
T
vs Switching Frequency
Normalized Switching Frequency
vs FBX
T
A
= 25C, unless otherwise noted.
FBX VOLTAGE (V)
0.8
0
N
O
R
M
A
L
I
Z
E
D

F
R
E
Q
U
E
N
C
Y

(
%
)
20
40
60
80
120
0.4 0 0.4 0.8
3757 G06
1.2 1.6
100
75 50 0 50 75 25 25 100 150 125
TEMPERATURE (C)
100
S
E
N
S
E

T
H
R
E
S
H
O
L
D

(
m
V
)
105
110
115
120
3757 G08
DUTY CYCLE (%)
0
95
S
E
N
S
E

T
H
R
E
S
H
O
L
D

(
m
V
)
105
20 40 80 60
115
100
110
100
3757 G09
SHDN/UVLO VOLTAGE (V)
0
0
S
H
D
N
/
U
V
L
O

C
U
R
R
E
N
T

(

A
)
20
10 20 30
40
10
30
40
3757 G11
75 50 0 50 75 25 25 100 150 125
TEMPERATURE (C)
1.6
I
S
H
D
N
/
U
V
L
O

(

A
)
1.8
2.0
2.2
2.4
3757 G12
SWITCHING FREQUENCY (KHz)
0
0
I
Q
(
m
A
)
15
20
35
300 500 600 700
10
5
25
30
100 200 400 900 800 1000
3757 G04
C
L
= 3300pF
SWITCHING FREQUENCY (KHz)
0
10
R
T
(
k

)
100
1000
300 500 600 700 100 200 400 900 800 1000
3757 G05
75 50 0 50 75 25 25 100 150 125
TEMPERATURE (C)
270
S
W
I
T
C
H
I
N
G

F
R
E
Q
U
E
N
C
Y

(
k
H
z
)
280
290
300
310
330
3757 G07
320
R
T
= 41.2K
75 50 0 50 75 25 25 100 150 125
TEMPERATURE (C)
1.18
S
H
D
N
/
U
V
L
O

V
O
L
T
A
G
E

(
V
)
1.22
1.24
1.26
1.28
1.20
3757 G10
SHDN/UVLO FALLING
SHDN/UVLO RISING
LT3757
6
3757fb
Typical perForMance characTerisTics
INTV
CC
Line Regulation
INTV
CC
Dropout Voltage
vs Current, Temperature
Gate Drive Rise
and Fall Time vs INTV
CC
Typical Start-Up Waveforms
INTV
CC
vs Temperature
INTV
CC
Minimum Output Current
vs V
IN
INTV
CC
Load Regulation
T
A
= 25C, unless otherwise noted.
Gate Drive Rise
and Fall Time vs C
L

FBX Frequency Foldback
Waveforms During Overcurrent
75 50 0 50 75 25 25 100 150 125
TEMPERATURE (C)
7.0
I
N
T
V
C
C

(
V
)
7.1
7.2
7.3
7.4
3757 G13
V
IN
(V)
0
I
N
T
V
C
C

V
O
L
T
A
G
E

(
V
)
35
7.25
7.20
10 20 5 15 25 30 40
7.15
7.10
7.30
3757 G16
C
L
(nF)
0
T
I
M
E

(
n
s
)
60
70
80
50
40
5 15 10 20 25 30
10
0
30
90
20
3757 G18
RISE TIME
INTV
CC
= 7.2V
FALL TIME
INTV
CC
(V)
3
T
I
M
E

(
n
s
)
20
25
15
10
9 6 12 15
5
0
30
3757 G19
C
L
= 3300pF
RISE TIME
FALL TIME
2ms/DIV
V
OUT
5V/DIV
I
L1A
+ I
L1B
5A/DIV
3757 G20
V
IN
= 12V
PAGE 31 CIRCUIT
50s/DIV
PAGE 31 CIRCUIT
V
OUT
10V/DIV
V
SW
20V/DIV
I
L1A
+ I
L1B
5A/DIV
3757 G21
V
IN
= 12V
INTV
CC
LOAD (mA)
0
6.8
7
7.1
7.2
7.3
20 40 50 60
6.9
10 30 70
3757 G15
I
N
T
V
C
C


V
O
L
T
A
G
E

(
V
)
V
IN
= 8V
INTV
CC
LOAD (mA)
0
D
R
O
P
O
U
T

V
O
L
T
A
G
E

(
m
V
)
500
600
300
400
200
10 5 15 20
100
0
700
3757 G17
150C
125C
25C
0C
55C
75C
V
IN
= 6V
V
IN
(V)
0
I
N
T
V
C
C

C
U
R
R
E
N
T

(
m
A
)
50
60
70
40
3757 G14
40
30
0
10
10 20 30 5 15 25 35
20
90
80
T
J
= 150C
INTV
CC
= 6V
INTV
CC
= 4.5V
LT3757
7
3757fb
pin FuncTions
VC (Pin 1): Error Amplifier Compensation Pin. Used to
stabilizethevoltageloopwithanexternalRCnetwork.
FBX (Pin 2):PositiveandNegativeFeedbackPin.Receives
the feedback voltage from the external resistor divider
acrosstheoutput.Alsomodulatesthefrequencyduring
start-upandfaultconditionswhenFBXisclosetoGND.
SS (Pin 3):Soft-StartPin.Thispinmodulatescompensa-
tionpinvoltage(VC)clamp.Thesoft-startintervalisset
withanexternalcapacitor.Thepinhasa10A(typical)
pull-upcurrentsourcetoaninternal2.5Vrail.Thesoft-
start pin is reset to GND by an undervoltage condition
atSHDN/UVLO,anINTV
CC
undervoltageorovervoltage
conditionoraninternalthermallockout.
RT (Pin 4):SwitchingFrequencyAdjustmentPin.Setthe
frequencyusingaresistortoGND.Donotleavethispin
open.
SYNC (Pin 5): Frequency Synchronization Pin. Used to
synchronizetheswitchingfrequencytoanoutsideclock.
Ifthisfeatureisused,anR
T
resistorshouldbechosento
programaswitchingfrequency20%slowerthantheSYNC
pulsefrequency.TietheSYNCpintoGNDifthisfeatureis
notused.SYNCisignoredwhenFBXisclosetoGND.
SENSE (Pin 6):TheCurrentSenseInputfortheControl
Loop.Kelvinconnectthispintothepositiveterminalof
the switch current sense resistor in the source of the
N-channelMOSFET.Thenegativeterminalofthecurrent
senseresistorshouldbeconnectedtoGNDplaneclose
totheIC.
GATE (Pin 7): N-Channel MOSFET Gate Driver Output.
SwitchesbetweenINTV
CC
andGND.DriventoGNDwhen
ICisshutdown,duringthermallockoutorwhenINTV
CC
is
aboveorbelowtheOVorUVthresholds,respectively.
INTV
CC
(Pin 8):RegulatedSupplyforInternalLoadsand
GateDriver.SuppliedfromV
IN
andregulatedto7.2V(typi-
cal).INTV
CC
mustbebypassedwithaminimumof4.7F
capacitorplacedclosetopin.INTV
CC
canbeconnected
directlytoV
IN
,ifV
IN
islessthan17.5V.INTV
CC
canalso
beconnectedtoapowersupplywhosevoltageishigher
than7.5V,andlowerthanV
IN
,providedthatsupplydoes
notexceed17.5V.
SHDN/UVLO (Pin 9):ShutdownandUndervoltageDetect
Pin. An accurate1.22V (nominal) falling thresholdwith
externallyprogrammablehysteresisdetectswhenpower
isokaytoenableswitching.Risinghysteresisisgenerated
bytheexternalresistordividerandanaccurateinternal
2Apull-downcurrent.Anundervoltageconditionresets
sort-start.Tieto0.4V,orless,todisablethedeviceand
reduceV
IN
quiescentcurrentbelow1A.
V
IN
(Pin 10): InputSupplyPin.Mustbelocallybypassed
with a 0.22F, or larger, capacitor placed close to the
pin.
Exposed Pad (Pin 11):Ground.Thispinalsoservesasthe
negativeterminalofthecurrentsenseresistor.TheExposed
Padmustbesoldereddirectlytothelocalgroundplane.
LT3757
8
3757fb
block DiagraM
Figure 1. LT3757 Block Diagram Working as a SEPIC Converter
L1
R1
R3 R4
M1
R2
L2
FBX
1.22V
2.5V
D1
C
DC
C
IN
V
OUT
C
OUT2
C
OUT1
C
VCC
INTV
CC
V
IN
R
SENSE
V
ISENSE

+
+
V
IN
I
S1
2A
10
8
7
1
9
SHDN/UVLO
INTERNAL
REGULATOR
AND UVLO
TSD
165C
A10
Q3
VC
VC
17.5V
2.7V UP
2.6V DOWN
A8
UVLO
I
S2
10A
I
S3
C
C1
C
C2 R
C
DRIVER
SLOPE
SENSE
GND
GATE
108mV
SR1
+

CURRENT
LIMIT
RAMP
GENERATOR
7.2V LDO

R O
S
2.5V
G1
RT
R
T
SS
C
SS
SYNC
1.25V
1.25V
FBX
FBX
1.6V
0.8V
+

2
3 5 4
+

6
11
RAMP
PWM
COMPARATOR
FREQUENCY
FOLDBACK
100kHz-1MHz
OSCILLATOR
FREQ
FOLDBACK
FREQ
PROG
3757 F01

+
+
Q1
A1
A2
1.72V
0.88V
+

A11
A12
A3
A4
A5
A6
G2 G5
G6
A7
A9
Q2
G4 G3
LT3757
9
3757fb
applicaTions inForMaTion
Main Control Loop
TheLT3757usesafixedfrequency,currentmodecontrol
schemetoprovideexcellentlineandloadregulation.Op-
erationcanbebestunderstoodbyreferringtotheBlock
DiagraminFigure1.
ThestartofeachoscillatorcyclesetstheSRlatch(SR1)and
turnsontheexternalpowerMOSFETswitchM1through
driverG2.Theswitchcurrentflowsthroughtheexternal
currentsensingresistorR
SENSE
andgeneratesavoltage
proportional to the switch current. This current sense
voltageV
ISENSE
(amplifiedbyA5)isaddedtoastabilizing
slopecompensationrampandtheresultingsum(SLOPE)
isfedintothepositiveterminalofthePWMcomparatorA7.
WhenSLOPEexceedsthelevelatthenegativeinputofA7
(VCpin),SR1isreset,turningoffthepowerswitch.The
levelatthenegativeinputofA7issetbytheerroramplifier
A1(orA2)andisanamplifiedversionofthedifference
betweenthefeedbackvoltage(FBXpin)andthereference
voltage(1.6Vor0.8V,dependingontheconfiguration).
Inthismanner,theerroramplifiersetsthecorrectpeak
switchcurrentleveltokeeptheoutputinregulation.
TheLT3757hasaswitchcurrentlimitfunction.Thecurrent
sensevoltageisinputtothecurrentlimitcomparatorA6.
IftheSENSEpinvoltageishigherthanthesensecurrent
limitthresholdV
SENSE(MAX)
(110mV,typical),A6willreset
SR1andturnoffM1immediately.
The LT3757 is capable of generating either positive or
negativeoutputvoltagewithasingleFBXpin.Itcanbe
configuredasaboost,flybackorSEPICconvertertogen-
eratepositiveoutputvoltage,orasaninvertingconverter
togeneratenegativeoutputvoltage.Whenconfiguredas
aSEPICconverter,asshowninFigure1,theFBXpinis
pulled up to the internal bias voltage of 1.6V by a volt-
age divider (R1 and R2) connected from V
OUT
to GND.
Comparator A2 becomes inactive and comparator A1
performstheinvertingamplificationfromFBXtoVC.When
theLT3757isinaninvertingconfiguration,theFBXpin
ispulleddownto0.8Vbyavoltagedividerconnected
fromV
OUT
toGND.ComparatorA1becomesinactiveand
comparator A2 performs the noninverting amplification
fromFBXtoVC.
The LT3757 has overvoltage protection functions to
protect the converter from excessive output voltage
overshootduringstart-uporrecoveryfromashort-circuit
condition. An overvoltage comparator A11 (with 20mV
hysteresis)senseswhentheFBXpinvoltageexceedsthe
positiveregulatedvoltage(1.6V)by8%andprovidesa
reset pulse. Similarly, an overvoltage comparator A12
(with10mVhysteresis)senseswhentheFBXpinvoltage
exceedsthenegativeregulatedvoltage(0.8V)by11%
andprovidesaresetpulse.Bothresetpulsesaresentto
themainRSlatch(SR1)throughG6andG5.Thepower
MOSFETswitchM1isactivelyheldoffforthedurationof
anoutputovervoltagecondition.
Programming Turn-On and Turn-Off Thresholds with
the SHDN/UVLO Pin
The SHDN/UVLO pin controls whether the LT3757 is
enabled or is in shutdown state. A micropower 1.22V
reference, a comparator A10 and a controllable current
sourceI
S1
allowtheusertoaccuratelyprogramthesup-
plyvoltageatwhichtheICturnsonandoff.Thefalling
value can be accurately set by the resistor dividers R3
andR4.WhenSHDN/UVLOisabove0.7V,andbelowthe
1.22Vthreshold,thesmallpull-downcurrentsourceI
S1

(typical2A)isactive.
Thepurposeofthiscurrentistoallowtheusertoprogram
therisinghysteresis.TheBlockDiagramofthecomparator
andtheexternalresistorsisshowninFigure1.Thetypical
fallingthresholdvoltageandrisingthresholdvoltagecan
becalculatedbythefollowingequations:

V
R R
R
V A
VIN FALLING
VIN RISING
,
,
.
( )

=
+
=
1 22
3 4
4
2 RR V
IN FALLING
3+
,
LT3757
10
3757fb
applicaTions inForMaTion
ForapplicationswheretheSHDN/UVLOpinisonlyused
asalogicinput,theSHDN/UVLOpincanbeconnected
directlytotheinputvoltageV
IN
foralways-onoperation.
INTV
CC
Regulator Bypassing and Operation
Aninternal,lowdropout(LDO)voltageregulatorproduces
the7.2VINTV
CC
supplywhichpowersthegatedriver,as
showninFigure1.Ifalowinputvoltageoperationisex-
pected(e.g.,supplyingpowerfromalithium-ionbattery
ora3.3Vlogicsupply),lowthresholdMOSFETsshould
be used. The LT3757 contains an undervoltage lockout
comparator A8 and an overvoltage lockout comparator
A9fortheINTV
CC
supply.TheINTV
CC
undervoltage(UV)
threshold is 2.7V (typical), with 100mV hysteresis, to
ensurethattheMOSFETshavesufficientgatedrivevoltage
beforeturningon.ThelogiccircuitrywithintheLT3757is
alsopoweredfromtheinternalINTV
CC
supply.
TheINTV
CC
overvoltage(OV)thresholdissettobe17.5V
(typical)toprotectthegateofthepowerMOSFET.When
INTV
CC
isbelowtheUVthreshold,orabovetheOVthresh-
old,theGATEpinwillbeforcedtoGNDandthesoft-start
operationwillbetriggered.
The INTV
CC
regulator must be bypassed to ground im-
mediatelyadjacenttotheICpinswithaminimumof4.7F
ceramiccapacitor.Goodbypassingisnecessarytosupply
thehightransientcurrentsrequiredbytheMOSFETgate
driver.
Inanactualapplication,mostoftheICsupplycurrentis
usedtodrivethegatecapacitanceofthepowerMOSFET.
Theon-chippowerdissipationcanbeasignificantconcern
when a large power MOSFET is being driven at a high
frequencyandtheV
IN
voltageishigh.Itisimportantto
limitthepowerdissipationthroughselectionofMOSFET
and/oroperatingfrequencysotheLT3757doesnotexceed
its maximum junction temperature rating. The junction
temperature T
J
can be estimated using the following
equations:
T
J
=T
A
+P
IC

JA
T
A
=ambienttemperature

JA
=junction-to-ambientthermalresistance
P
IC
=ICpowerconsumption
=V
IN
(I
Q
+I
DRIVE
)
I
Q
=V
IN
operationI
Q
=1.6mA
I
DRIVE
=averagegatedrivecurrent=fQ
G
f=switchingfrequency
Q
G
=powerMOSFETtotalgatecharge
TheLT3757usespackageswithanExposedPadforen-
hancedthermalconduction.Withpropersolderingtothe
ExposedPadontheundersideofthepackageandafull
copperplaneunderneaththedevice,thermalresistance
(
JA
)willbeabout43C/WfortheDDpackageand40C/W
fortheMSEpackage.Foranambientboardtemperatureof
T
A
=70Candmaximumjunctiontemperatureof125C,
themaximumI
DRIVE
(I
DRIVE(MAX)
)oftheDDpackagecan
becalculatedas:

I
T T
V
I
W
V
DRIVE MAX
J A
JA IN
Q
IN
( )
( )
( )
.
. =

=

1 28
1 66mA
The LT3757 has an internal INTV
CC
I
DRIVE
current limit
functiontoprotecttheICfromexcessiveon-chippower
dissipation.TheI
DRIVE
currentlimitdecreasesastheV
IN

increases(seetheINTV
CC
MinimumOutputCurrentvsV
IN

graphintheTypicalPerformanceCharacteristicssection).
IfI
DRIVE
reachesthecurrentlimit,INTV
CC
voltagewillfall
andmaytriggerthesoft-start.
BasedontheprecedingequationandtheINTV
CC
Minimum
OutputCurrentvsV
IN
graph,theusercancalculatethe
maximumMOSFETgatechargetheLT3757candriveat
agivenV
IN
andswitchfrequency.Aplotofthemaximum
Q
G
vsV
IN
atdifferentfrequenciestoguaranteeaminimum
4.5VINTV
CC
isshowninFigure2.
AsillustratedinFigure2,atrade-offbetweentheoperating
frequencyandthesizeofthepowerMOSFETmaybeneeded
in order to maintain a reliable IC junction temperature.
Prior to lowering the operating frequency, however, be
suretocheckwithpowerMOSFETmanufacturersfortheir
mostrecentlowQ
G
,lowR
DS(ON)
devices.PowerMOSFET
manufacturingtechnologiesarecontinuallyimproving,with
newerandbetterperformancedevicesbeingintroduced
almostyearly.
LT3757
11
3757fb
applicaTions inForMaTion
Figure 2. Recommended Maximum Q
G
vs V
IN
at Different
Frequencies to Ensure INTV
CC
Higher Than 4.5V
Aneffectiveapproachtoreducethepowerconsumption
oftheinternalLDOforgatedriveistotietheINTV
CC
pin
toanexternalvoltagesourcehighenoughtoturnoffthe
internalLDOregulator.
If the input voltage V
IN
does not exceed the absolute
maximumratingofboththepowerMOSFETgate-source
voltage(V
GS
)andtheINTV
CC
overvoltagelockoutthreshold
voltage(17.5V),theINTV
CC
pincanbeshorteddirectly
totheV
IN
pin.Inthiscondition,theinternalLDOwillbe
turned off and the gate driver will be powered directly
fromtheinputvoltage,V
IN
.WiththeINTV
CC
pinshortedto
V
IN
,however,asmallcurrent(around16A)willloadthe
INTV
CC
inshutdownmode.Forapplicationsthatrequire
thelowestshutdownmodeinputsupplycurrent,donot
connecttheINTV
CC
pintoV
IN
.
InSEPICorflybackapplications,theINTV
CC
pincanbe
connectedtotheoutputvoltageV
OUT
throughablocking
diode,asshowninFigure3,ifV
OUT
meetsthefollowing
conditions:
1.V
OUT
<V
IN
(pinvoltage)
2.7.2<V
OUT
<17.5V
3.V
OUT
<maximumV
GS
ratingofpowerMOSFET
AresistorR
VCC
canbeconnected,asshowninFigure3,to
limittheinrushcurrentfromV
OUT
.Regardlessofwhether
Figure 3. Connecting INTV
CC
to V
OUT
C
VCC
4.7F
V
OUT
3757 F03
INTV
CC
GND
LT3757
R
VCC
D
VCC
V
IN
(V)
0
Q
G

(
n
C
)
200
250
150
100
10 20 5 15 30 40 25 35
50
0
300
3757 F02
300kHz
1MHz
ornottheINTV
CC
pinisconnectedtoanexternalvoltage
source,itisalwaysnecessarytohavethedrivercircuitry
bypassedwitha4.7FlowESRceramiccapacitortoground
immediatelyadjacenttotheINTV
CC
andGNDpins.
Operating Frequency and Synchronization
The choice of operating frequency may be determined
byon-chippowerdissipation,otherwiseitisatrade-off
betweenefficiencyandcomponentsize.Lowfrequency
operationimprovesefficiencybyreducinggatedrivecur-
rentandMOSFETanddiodeswitchinglosses.However,
lower frequency operation requires a physically larger
inductor. Switching frequency also has implications for
loopcompensation.TheLT3757usesaconstant-frequency
architecture that can be programmed over a 100kHz to
1000kHz range with a single external resistor from the
RTpintoground,asshowninFigure1.TheRTpinmust
haveanexternalresistortoGNDforproperoperationof
theLT3757.AtableforselectingthevalueofR
T
foragiven
operatingfrequencyisshowninTable1.
Table 1. Timing Resistor (R
T
) Value
OSCILLATOR FREQUENCY (kHz) R
T
(k)
100 140
200 63.4
300 41.2
400 30.9
500 24.3
600 19.6
700 16.5
800 14
900 12.1
1000 10.5
LT3757
12
3757fb
applicaTions inForMaTion
TheoperatingfrequencyoftheLT3757canbesynchronized
toanexternalclocksource.Byprovidingadigitalclock
signalintotheSYNCpin,theLT3757willoperateatthe
SYNCclockfrequency.Ifthisfeatureisused,anR
T
resistor
shouldbechosentoprogramaswitchingfrequency20%
slowerthanSYNCpulsefrequency.TheSYNCpulseshould
haveaminimumpulsewidthof200ns.TietheSYNCpin
toGNDifthisfeatureisnotused.
Duty Cycle Consideration
Switchingdutycycleisakeyvariabledefiningconverter
operation.Assuch,itslimitsmustbeconsidered.Minimum
on-timeisthesmallesttimedurationthattheLT3757is
capable of turning on the power MOSFET. This time is
generallyabout220ns(typical)(seeMinimumOn-Time
intheElectricalCharacteristicstable).Ineachswitching
cycle,theLT3757keepsthepowerswitchoffforatleast
220ns(typical)(seeMinimumOff-TimeintheElectrical
Characteristicstable).
The minimum on-time and minimum off-time and the
switchingfrequencydefinetheminimumandmaximum
switchingdutycyclesaconverterisabletogenerate:
Minimumdutycycle=minimumon-timefrequency
Maximumdutycycle=1(minimumoff-timefrequency)
Programming the Output Voltage
Theoutputvoltage(V
OUT
)issetbyaresistordivider,as
showninFigure1.ThepositiveandnegativeV
OUT
areset
bythefollowingequations:

V V
R
R
V
OUT POSITIVE
OUT NEGATIV
,
,
. = +

1 6 1
2
1
EE
V
R
R
= +

. 0 8 1
2
1
The resistors R1 and R2 are typically chosen so that
theerrorcausedbythecurrentflowingintotheFBXpin
duringnormaloperationislessthan1%(thistranslates
toamaximumvalueofR1atabout158k).
Soft-Start
TheLT3757containsseveralfeaturestolimitpeakswitch
currents and output voltage (V
OUT
) overshoot during
start-uporrecoveryfromafaultcondition.Theprimary
purposeofthesefeaturesistopreventdamagetoexternal
componentsortheload.
Highpeakswitchcurrentsduringstart-upmayoccurin
switchingregulators.SinceV
OUT
isfarfromitsfinalvalue,
thefeedbackloopissaturatedandtheregulatortriesto
chargetheoutputcapacitorasquicklyaspossible,resulting
inlargepeakcurrents.Alargesurgecurrentmaycause
inductorsaturationorpowerswitchfailure.
TheLT3757addressesthismechanismwiththeSSpin.As
showninFigure1,theSSpinreducesthepowerMOSFET
currentbypullingdowntheVCpinthroughQ2.Inthisway
theSSallowstheoutputcapacitortochargegraduallyto-
warditsfinalvaluewhilelimitingthestart-uppeakcurrents.
Thetypicalstart-upwaveformsareshownintheTypical
PerformanceCharacteristicssection.Theinductorcurrent
I
L
slewingrateislimitedbythesoft-startfunction.
Besidesstart-up,soft-startcanalsobetriggeredbythe
followingfaults:
1.INTV
CC
>17.5V
2.INTV
CC
<2.6V
3.Thermallockout
Any of these three faults will cause the LT3757 to stop
switchingimmediately.TheSSpinwillbedischargedby
Q3.WhenallfaultsareclearedandtheSSpinhasbeen
dischargedbelow0.2V,a10AcurrentsourceI
S2
starts
chargingtheSSpin,initiatingasoft-startoperation.
The soft-start interval is set by the soft-start capacitor
selectionaccordingtotheequation:

T C
V
A
SS SS
=
. 1 25
10
LT3757
13
3757fb
applicaTions inForMaTion
FBX Frequency Foldback
WhenV
OUT
isverylowduringstart-uporashort-circuit
faultontheoutput,theswitchingregulatormustoperate
atlowdutycyclestomaintainthepowerswitchcurrent
withinthecurrentlimitrange,sincetheinductorcurrent
decayrateisverylowduringswitchofftime.Theminimum
on-timelimitationmaypreventtheswitcherfromattaining
asufficientlylowdutycycleattheprogrammedswitch-
ingfrequency.So,theswitchcurrentwillkeepincreasing
through each switch cycle, exceeding the programmed
current limit. To prevent the switch peak currents from
exceeding the programmed value, the LT3757 contains
a frequency foldback function to reduce the switching
frequencywhentheFBXvoltageislow(seetheNormal-
ized Switching Frequency vs FBX graph in the Typical
PerformanceCharacteristicssection).
Thetypicalfrequencyfoldbackwaveformsareshownin
theTypicalPerformanceCharacteristicssection.Thefre-
quencyfoldbackfunctionpreventsI
L
fromexceedingthe
programmedlimitsbecauseoftheminimumon-time.
During frequency foldback, external clock synchroniza-
tion is disabled to prevent interference with frequency
reducingoperation.
Thermal Lockout
If LT3757 die temperature reaches 165C (typical), the
partwillgointothermallockout.Thepowerswitchwill
beturnedoff.Asoft-startoperationwillbetriggered.The
partwillbeenabledagainwhenthedietemperaturehas
droppedby5C(nominal).
Loop Compensation
Loopcompensationdeterminesthestabilityandtransient
performance.TheLT3757usescurrentmodecontrolto
regulatetheoutputwhichsimplifiesloopcompensation.
Theoptimumvaluesdependontheconvertertopology,the
componentvaluesandtheoperatingconditions(including
theinputvoltage,loadcurrent,etc.).Tocompensatethe
feedbackloopoftheLT3757,aseriesresistor-capacitor
network is usually connected from the VC pin to GND.
Figure1showsthetypicalVCcompensationnetwork.For
mostapplications,thecapacitorshouldbeintherangeof
470pFto22nF,andtheresistorshouldbeintherangeof
5kto50k.Asmallcapacitorisoftenconnectedinparal-
lel with the RC compensation network to attenuate the
V
C
voltagerippleinducedfromtheoutputvoltageripple
throughtheinternalerroramplifier.Theparallelcapacitor
usuallyrangesinvaluefrom10pFto100pF.Apractical
approachtodesignthecompensationnetworkistostart
withoneofthecircuitsinthisdatasheetthatissimilar
toyourapplication,andtunethecompensationnetwork
to optimize the performance. Stability should then be
checked across all operating conditions, including load
current,inputvoltageandtemperature.
SENSE Pin Programming
For control and protection, the LT3757 measures the
powerMOSFETcurrentbyusingasenseresistor(R
SENSE
)
betweenGNDandtheMOSFETsource.Figure4showsa
typicalwaveformofthesensevoltage(V
SENSE
)acrossthe
senseresistor.ItisimportanttouseKelvintracesbetween
theSENSEpinandR
SENSE
,andtoplacetheICGNDas
closeaspossibletotheGNDterminaloftheR
SENSE
for
properoperation.
Figure 4. The Sense Voltage During a Switching Cycle
3757 F04
V
SENSE(PEAK)
$V
SENSE = Cv
V
SENSE(MAX)
V
SENSE
t
DT
S
V
SENSE(MAX)
T
S
LT3757
14
3757fb
applicaTions inForMaTion
DuetothecurrentlimitfunctionoftheSENSEpin,R
SENSE
shouldbeselectedtoguaranteethatthepeakcurrentsense
voltageV
SENSE(PEAK)
duringsteadystatenormaloperation
islowerthantheSENSEcurrentlimitthreshold(seethe
Electrical Characteristics table). Given a 20% margin,
V
SENSE(PEAK)
is set to be 80mV. Then, the maximum
switchripplecurrentpercentagecanbecalculatedusing
thefollowingequation:

c=

V
mV V
SENSE
SENSE
80 0 5 .
c
isusedinsubsequentdesignexamplestocalculateinduc-
torvalue.V
SENSE
istheripplevoltageacrossR
SENSE
.
TheLT3757switchingcontrollerincorporates100nstiming
intervaltoblanktheringingonthecurrentsensesignal
immediatelyafterM1isturnedon.Thisringingiscaused
by the parasitic inductance and capacitance of the PCB
trace,thesenseresistor,thediode,andtheMOSFET.The
100nstimingintervalisadequateformostoftheLT3757
applications.Intheapplicationsthathaveverylargeand
longringingonthecurrentsensesignal,asmallRCfilter
can be added to filter out the excess ringing. Figure 5
showstheRCfilteronSENSEpin.Itisusuallysufficient
to choose 22 for R
FLT
and 2.2nF to 10nF for C
FLT
.
KeepR
FLT
sresistancelow.Rememberthatthereis65A
(typical)flowingoutoftheSENSEpin.AddingR
FLT
will
affecttheSENSEcurrentlimitthreshold:
V
SENSE_ILIM
=108mV65AR
FLT
APPLICATION CIRCUITS
TheLT3757canbeconfiguredasdifferenttopologies.The
firsttopologytobeanalyzedwillbetheboostconverter,
followedbytheflyback,SEPICandinvertingconverters.
Boost Converter: Switch Duty Cycle and Frequency
TheLT3757canbeconfiguredasaboostconverterfor
the applications where the converter output voltage is
higherthantheinputvoltage.Rememberthatboostcon-
vertersarenot short-circuit protected. Undera shorted
outputcondition,theinductorcurrentislimitedonlyby
the input supply capability. For applications requiring a
step-upconverterthatisshort-circuitprotected,please
refer to the Applications Information section covering
SEPICconverters.
Theconversionratioasafunctionofdutycycleis

V
V D
OUT
IN
=

1
1
incontinuousconductionmode(CCM).
ForaboostconverteroperatinginCCM,thedutycycle
ofthemainswitchcanbecalculatedbasedontheoutput
voltage(V
OUT
)andtheinputvoltage(V
IN
).Themaximum
duty cycle (D
MAX
) occurs when the converter has the
minimuminputvoltage:

D
V V
V
MAX
OUT IN MIN
OUT
=

( )
Discontinuousconductionmode(DCM)provideshigher
conversionratiosatagivenfrequencyatthecostofreduced
efficienciesandhigherswitchingcurrents.
Figure 5. The RC Filter on SENSE Pin
C
FLT
3757 F05
LT3757
R
FLT
R
SENSE
M1
SENSE
GATE
GND
LT3757
15
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applicaTions inForMaTion
Boost Converter: Inductor and Sense Resistor Selection
Fortheboosttopology,themaximumaverageinductor
currentis:

I I
D
L MAX O MAX
MAX
( ) ( )
=

1
1
Then,theripplecurrentcanbecalculatedby:

I I I
D
L L MAX O MAX
MAX
= =

c c
( ) ( )
1
1
Theconstant
c
intheprecedingequationrepresentsthe
percentage peak-to-peak ripple current in the inductor,
relativetoI
L(MAX)
.
Theinductorripplecurrenthasadirecteffectonthechoice
of the inductor value. Choosing smaller values of I
L
requireslargeinductancesandreducesthecurrentloop
gain(theconverterwillapproachvoltagemode).Accepting
largervaluesofI
L
providesfasttransientresponseand
allowstheuseoflowinductances,butresultsinhigherinput
currentrippleandgreatercorelosses.Itisrecommended
that
c
fallwithintherangeof0.2to0.6.
Givenanoperatinginputvoltagerange,andhavingchosen
theoperatingfrequencyandripplecurrentintheinductor,
theinductorvalueoftheboostconvertercanbedetermined
usingthefollowingequation:

L
V
I f
D
IN MIN
L
MAX
=
( )

ThepeakandRMSinductorcurrentare:

I I
I I
L PEAK L MAX
L RMS L MAX
( ) ( )
( ) ( )

= +

=
1
2
c
11
12
2
+
c
Based on these equations, the user should choose the
inductors having sufficient saturation and RMS current
ratings.
SetthesensevoltageatI
L(PEAK)
tobetheminimumofthe
SENSE current limit threshold with a 20% margin. The
senseresistorvaluecanthenbecalculatedtobe:

R
mV
I
SENSE
L PEAK
=
80
( )
Boost Converter: Power MOSFET Selection
ImportantparametersforthepowerMOSFETincludethe
drain-sourcevoltagerating(V
DS
),thethresholdvoltage
(V
GS(TH)
),theon-resistance(R
DS(ON)
),thegatetosource
andgatetodraincharges(Q
GS
andQ
GD
),themaximum
drain current (I
D(MAX)
) and the MOSFETs thermal
resistances(R
JC
andR
JA
).
The power MOSFET will see full output voltage, plus a
diodeforwardvoltage,andanyadditionalringingacross
itsdrain-to-sourceduringitsoff-time.Itisrecommended
tochooseaMOSFETwhoseB
VDSS
ishigherthanV
OUT
by
asafetymargin(a10Vsafetymarginisusuallysufficient).
ThepowerdissipatedbytheMOSFETinaboostconverteris:
P
FET
=I
2
L(MAX)
R
DS(ON)
D
MAX
+2V
2
OUT
I
L(MAX)

C
RSS
f/1A
The first term in the preceding equation represents the
conductionlossesinthedevice,andthesecondterm,the
switchingloss.C
RSS
isthereversetransfercapacitance,
whichisusuallyspecifiedintheMOSFETcharacteristics.
For maximum efficiency, R
DS(ON)
and C
RSS
should be
minimized.Fromaknownpowerdissipatedinthepower
MOSFET,itsjunctiontemperaturecanbeobtainedusing
thefollowingequation:
T
J
=T
A
+P
FET

JA
=T
A
+P
FET
(
JC
+
CA
)
LT3757
16
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applicaTions inForMaTion
Figure 6. The Output Ripple Waveform of a Boost Converter
V
OUT
(AC)
t
ON
$V
ESR
RINGING DUE TO
TOTAL INDUCTANCE
(BOARD + CAP)
$V
COUT
3757 F05
t
OFF
T
J
must not exceed the MOSFET maximum junction
temperature rating. It is recommended to measure the
MOSFETtemperatureinsteadystatetoensurethatabsolute
maximumratingsarenotexceeded.
Boost Converter: Output Diode Selection
To maximize efficiency, a fast switching diode with low
forward drop and low reverse leakage is desirable. The
peak reverse voltage that the diode must withstand is
equaltotheregulatoroutputvoltageplusanyadditional
ringingacrossitsanode-to-cathodeduringtheon-time.
Theaverageforwardcurrentinnormaloperationisequal
totheoutputcurrent,andthepeakcurrentisequalto:

I I I
D PEAK L PEAK L MAX ( ) ( ) ( )
= = +

1
2
c
Itisrecommendedthatthepeakrepetitivereversevoltage
ratingV
RRM
ishigherthanV
OUT
byasafetymargin(a10V
safetymarginisusuallysufficient).
Thepowerdissipatedbythediodeis:
P
D
=I
O(MAX)
V
D
andthediodejunctiontemperatureis:
T
J
=T
A
+P
D
R
JA
The R
JA
to be used in this equation normally includes
theR
JC
forthedeviceplusthethermalresistancefrom
theboardtotheambienttemperatureintheenclosure.T
J

mustnotexceedthediodemaximumjunctiontemperature
rating.
The choice of component(s) begins with the maximum
acceptableripplevoltage(expressedasapercentageof
theoutputvoltage),andhowthisrippleshouldbedivided
betweentheESRstepV
ESR
andthecharging/discharg-
ingV
COUT
.Forthepurposeofsimplicity,wewillchoose
2%forthemaximumoutputripple,tobedividedequally
between V
ESR
and V
COUT
. This percentage ripple will
change, depending on the requirements of the applica-
tion,andthefollowingequationscaneasilybemodified.
Fora1%contributiontothetotalripplevoltage,theESR
oftheoutputcapacitorcanbedeterminedusingthefol-
lowingequation:

ESR
V
I
COUT
OUT
D PEAK

0 01 .
( )
Boost Converter: Output Capacitor Selection
ContributionsofESR(equivalentseriesresistance),ESL
(equivalentseriesinductance)andthebulkcapacitance
must be considered when choosing the correct output
capacitorsforagivenoutputripplevoltage.Theeffectof
thesethreeparameters(ESR,ESLandbulkC)ontheoutput
voltageripplewaveformforatypicalboostconverteris
illustratedinFigure6.
LT3757
17
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applicaTions inForMaTion
ForthebulkCcomponent,whichalsocontributes1%to
thetotalripple:

C
I
V f
OUT
O MAX
OUT

( )
. 0 01
Theoutputcapacitorinaboostregulatorexperienceshigh
RMSripplecurrents,asshowninFigure6.TheRMSripple
currentratingoftheoutputcapacitorcanbedetermined
usingthefollowingequation:

I I
D
D
RMS COUT O MAX
MAX
MAX
( ) ( )

1
MultiplecapacitorsareoftenparalleledtomeetESRrequire-
ments.Typically,oncetheESRrequirementissatisfied,the
capacitanceisadequateforfilteringandhastherequired
RMScurrentrating.Additionalceramiccapacitorsinpar-
allelarecommonlyusedtoreducetheeffectofparasitic
inductance in the output capacitor, which reduces high
frequencyswitchingnoiseontheconverteroutput.
Boost Converter: Input Capacitor Selection
The input capacitor of a boost converter is less critical
thantheoutputcapacitor,duetothefactthattheinductor
is in series with the input, and the input current wave-
formiscontinuous.Theinputvoltagesourceimpedance
determinesthesizeoftheinputcapacitor,whichistypi-
callyintherangeof10Fto100F.AlowESRcapacitor
isrecommended,althoughitisnotascriticalasforthe
outputcapacitor.
TheRMSinputcapacitorripplecurrentforaboostcon-
verteris:
I
RMS(CIN)
=0.3I
L
FLYBACK CONVERTER APPLICATIONS
TheLT3757canbeconfiguredasaflybackconverterforthe
applicationswheretheconvertershavemultipleoutputs,
highoutputvoltagesorisolatedoutputs.Figure7shows
asimplifiedflybackconverter.
Theflybackconverterhasaverylowpartscountformul-
tipleoutputs,andwithprudentselectionofturnsratio,can
havehighoutput/inputvoltageconversionratioswitha
desirabledutycycle.However,ithaslowefficiencydueto
thehighpeakcurrents,highpeakvoltagesandconsequent
powerloss.Theflybackconverteriscommonlyusedfor
anoutputpoweroflessthan50W.
Theflybackconvertercanbedesignedtooperateeither
incontinuousordiscontinuousmode.Comparedtocon-
tinuousmode,discontinuousmodehastheadvantageof
smallertransformerinductancesandeasyloopcompen-
sation, and the disadvantage of higher peak-to-average
current and lower efficiency. In the high output voltage
applications, the flyback converters can be designed
to operate in discontinuous mode to avoid using large
transformers.
Figure 7. A Simplified Flyback Converter
R
SENSE
N
P
:N
S
V
IN
C
IN
C
SN
V
SN
L
P
D
SUGGESTED
RCD SNUBBER
I
D
I
SW
V
DS
3757 F06
GATE
GND
LT3757
SENSE
L
S
M
+

R
SN
D
SN

+
+
C
OUT
+
LT3757
18
3757fb
applicaTions inForMaTion
Flyback Converter: Switch Duty Cycle and Turns Ratio
Theflybackconverterconversionratiointhecontinuous
modeoperationis:

V
V
N
N
D
D
OUT
IN
S
P
=

1
whereN
S
/N
P
isthesecondtoprimaryturnsratio.
Figure8showsthewaveformsoftheflybackconverter
indiscontinuousmodeoperation.Duringeachswitching
period T
S
, three subintervals occur: DT
S
, D2T
S
, D3T
S
.
During DT
S
, M is on, and D is reverse-biased. During
D2T
S
,Misoff,andL
S
isconductingcurrent.BothL
P
and
L
S
currentsarezeroduringD3T
S
.
Theflybackconverterconversionratiointhediscontinu-
ousmodeoperationis:

V
V
N
N
D
D
OUT
IN
S
P
=
2
Accordingtotheprecedingequations,theuserhasrelative
freedominselectingtheswitchdutycycleorturnsratioto
suitagivenapplication.Theselectionsofthedutycycle
andtheturnsratioaresomewhatiterativeprocesses,due
tothenumberofvariablesinvolved.Theusercanchoose
eitheradutycycleoraturnsratioasthestartpoint.The
following trade-offs should be considered when select-
ingtheswitchdutycycleorturnsratio,tooptimizethe
converter performance. A higher duty cycle affects the
flybackconverterinthefollowingaspects:
Lower MOSFET RMS current I
SW(RMS)
, but higher
MOSFETV
DS
peakvoltage
Lower diode peak reverse voltage, but higher diode
RMScurrentI
D(RMS)

Highertransformerturnsratio(N
P
/N
S
)
Thechoice,

D
D D +
=
2
1
3
(fordiscontinuousmodeoperationwithagivenD3)gives
thepowerMOSFETthelowestpowerstress(theproduct
ofRMScurrentandpeakvoltage).However,inthehigh
outputvoltageapplications,ahigherdutycyclemaybe
adopted to limit the large peak reverse voltage of the
diode.Thechoice,

D
D D +
=
2
2
3
(fordiscontinuousmodeoperationwithagivenD3)gives
thediodethelowestpowerstress(theproductofRMS
currentandpeakvoltage).Anextremehighorlowduty
cycleresultsinhighpowerstressontheMOSFETordiode,
and reduces efficiency. It is recommended to choose a
dutycycle,D,between20%and80%.
Figure 8. Waveforms of the Flyback Converter
in Discontinuous Mode Operation
3757 F07
I
SW
V
DS
I
D
t DT
S
D2T
S
D3T
S
I
SW(MAX)
I
D(MAX)
T
S
LT3757
19
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applicaTions inForMaTion
Flyback Converter: Transformer Design for
Discontinuous Mode Operation
Thetransformerdesignfordiscontinuousmodeofopera-
tionischosenaspresentedhere.AccordingtoFigure8,
the minimum D3 (D3
MIN
) occurs when the converter
hastheminimumV
IN
andthemaximumoutputpower
(P
OUT
).ChooseD3
MIN
tobeequaltoorhigherthan10%
to guarantee the converter is always in discontinuous
mode operation (choosing higher D3 allows the use
oflowinductances,butresultsinahigherswitchpeak
current).
TheusercanchooseaD
MAX
asthestartpoint.Then,the
maximumaverageprimarycurrentscanbecalculatedby
thefollowingequation:

I I
P
D V
LP MAX SW MAX
OUT MAX
MAX IN MIN
( ) ( )
( )
( )

= =
h
wherehistheconverterefficiency.
Iftheflybackconverterhasmultipleoutputs,P
OUT(MAX)

isthesumofalltheoutputpower.
Themaximumaveragesecondarycurrentis:

I I
I
D
LS MAX D MAX
OUT MAX
( ) ( )
( )
= =
2
where:
D2=1D
MAX
D3
theprimaryandsecondaryRMScurrentsare:

I I
D
LP RMS LP MAX
MAX
( ) ( )
=2
3

I I
D
LS RMS LS MAX ( ) ( )
=2
2
3
AccordingtoFigure8,theprimaryandsecondarypeak
currentsare:
I
LP(PEAK)
=I
SW(PEAK)
=2I
LP(MAX)
I
LS(PEAK)
=I
D(PEAK)
=2I
LS(MAX)
The primary and second inductor values of the flyback
convertertransformercanbedeterminedusingthefol-
lowingequations:

L
D V
P f
L
D V
P
MAX IN MAX
OUT MAX
S
O
=
=
2 2
2
2
2


(
( )
( )
h
UUT D
OUT MAX
V
I f
+ )

( )
2
Theprimarytosecondturnsratiois:

N
N
L
L
P
S
P
S
=
Flyback Converter: Snubber Design
Transformer leakage inductance (on either the primary
orsecondary)causesavoltagespiketooccurafterthe
MOSFETturn-off.Thisisincreasinglyprominentathigher
load currents, where more stored energy must be dis-
sipated.Insomecasesasnubbercircuitwillberequired
to avoid overvoltage breakdown at the MOSFETs drain
node.Therearedifferentsnubbercircuits,andApplication
Note19isagoodreferenceonsnubberdesign.AnRCD
snubberisshowninFigure7.
Thesnubberresistorvalue(R
SN
)canbecalculatedbythe
followingequation:

R
V V V
N
N
I L f
SN
SN SN OUT
P
S
SW PEAK LK
=

2
2
2

( )
LT3757
20
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applicaTions inForMaTion
where V
SN
is the snubber capacitor voltage. A smaller
V
SN
resultsinalargersnubberloss.AreasonableV
SN
is
2to2.5timesof:

V N
N
OUT P
S

L
LK
is the leakage inductance of the primary winding,
which is usually specified in the transformer character-
istics. L
LK
can be obtained by measuring the primary
inductance with the secondary windings shorted. The
snubbercapacitorvalue(C
CN
)canbedeterminedusing
thefollowingequation:

C
V
V R f
CN
SN
SN CN
=

whereV
SN
isthevoltagerippleacrossC
CN
.Areasonable
V
SN
is5%to10%ofV
SN
.Thereversevoltageratingof
D
SN
shouldbehigherthanthesumofV
SN
andV
IN(MAX)
.
Flyback Converter: Sense Resistor Selection
Inaflybackconverter,whenthepowerswitchisturned
on, the current flowing through the sense resistor
(I
SENSE
)is:
I
SENSE
=I
LP
SetthesensevoltageatI
LP(PEAK)
tobetheminimumof
theSENSEcurrentlimitthresholdwitha20%margin.The
senseresistorvaluecanthenbecalculatedtobe:

R
mV
I
SENSE
LP PEAK
=
80
( )
Flyback Converter: Power MOSFET Selection
Fortheflybackconfiguration,theMOSFETisselectedwith
aV
DC
ratinghighenoughtohandlethemaximumV
IN
,the
reflectedsecondaryvoltageandthevoltagespikedueto
theleakageinductance.ApproximatetherequiredMOSFET
V
DC
ratingusing:
BV
DSS
>V
DS(PEAK)
where:

V V V
DS PEAK IN MAX SN ( ) ( )
= +
The power dissipated by the MOSFET in a flyback con-
verteris:
P
FET
=I
2
M(RMS)
R
DS(ON)
+2V
2
DS(PEAK)
I
L(MAX)

C
RSS
f/1A
Thefirstterminthisequationrepresentstheconduction
lossesinthedevice,andthesecondterm,theswitching
loss. C
RSS
is the reverse transfer capacitance, which is
usuallyspecifiedintheMOSFETcharacteristics.
FromaknownpowerdissipatedinthepowerMOSFET,its
junctiontemperaturecanbeobtainedusingthefollowing
equation:
T
J
=T
A
+P
FET

JA
=T
A
+P
FET
(
JC
+
CA
)
T
J
must not exceed the MOSFET maximum junction
temperature rating. It is recommended to measure the
MOSFETtemperatureinsteadystatetoensurethatabsolute
maximumratingsarenotexceeded.
LT3757
21
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applicaTions inForMaTion
Flyback Converter: Output Diode Selection
Theoutputdiodeinaflybackconverterissubjecttolarge
RMS current and peak reverse voltage stresses. A fast
switchingdiodewithalowforwarddropandalowreverse
leakageisdesired.Schottkydiodesarerecommendedif
theoutputvoltageisbelow100V.
Approximatetherequiredpeakrepetitivereversevoltage
ratingV
RRM
using:

V
N
N
V V
RRM
S
P
IN MAX OUT
> +
( )
Thepowerdissipatedbythediodeis:
P
D
=I
O(MAX)
V
D
andthediodejunctiontemperatureis:
T
J
=T
A
+P
D
R
JA
The R
JA
to be used in this equation normally includes
theR
JC
forthedevice,plusthethermalresistancefrom
theboardtotheambienttemperatureintheenclosure.T
J

mustnotexceedthediodemaximumjunctiontemperature
rating.
Flyback Converter: Output Capacitor Selection
Theoutputcapacitoroftheflybackconverterhasasimilar
operationconditionasthatoftheboostconverter.Referto
theBoostConverter:OutputCapacitorSelectionsection
forthecalculationofC
OUT
andESR
COUT
.
The RMS ripple current rating of the output capacitors
indiscontinuousoperationcanbedeterminedusingthe
followingequation:

I I
D
RMS COUT DISCONTINUOUS O MAX ( ), ( )

( )

4 3 2
3 DD2
Flyback Converter: Input Capacitor Selection
The input capacitor in a flyback converter is subject to
a large RMS current due to the discontinuous primary
current. To prevent large voltage transients, use a low
ESRinputcapacitorsizedforthemaximumRMScurrent.
TheRMSripplecurrentratingoftheinputcapacitorsin
discontinuous operation can be determined using the
followingequation:

I
P
V
RMS CIN DISCONTINUOUS
OUT MAX
IN MIN
( ),
( )
( )

( )

4 3
3
D
D
MAX
MAX
SEPIC CONVERTER APPLICATIONS
TheLT3757canbeconfiguredasaSEPIC(single-ended
primaryinductanceconverter),asshowninFigure1.This
topologyallowsfortheinputtobehigher,equal,orlower
thanthedesiredoutputvoltage.Theconversionratioas
afunctionofdutycycleis:

V V
V
D
D
OUT D
IN
+
=
1
incontinuousconductionmode(CCM).
InaSEPICconverter,noDCpathexistsbetweentheinput
andoutput.Thisisanadvantageovertheboostconverter
forapplicationsrequiringtheoutputtobedisconnected
fromtheinputsourcewhenthecircuitisinshutdown.
Comparedtotheflybackconverter,theSEPICconverter
hastheadvantagethatboththepowerMOSFETandthe
outputdiodevoltagesareclampedbythecapacitors(C
IN
,
C
DC
and C
OUT
), therefore, there is less voltage ringing
across the power MOSFET and the output diodes. The
SEPICconverterrequiresmuchsmallerinputcapacitors
thanthoseoftheflybackconverter.Thisisduetothefact
LT3757
22
3757fb
applicaTions inForMaTion
Figure 9. The Switch Current Waveform of the SEPIC Converter
3757 F08
$I
SW = Cv
I
SW(MAX)
I
SW
t
DT
S
I
SW(MAX)
T
S
that,intheSEPICconverter,theinductorL1isinseries
withtheinput,andtheripplecurrentflowingthroughthe
inputcapacitoriscontinuous.
SEPIC Converter: Switch Duty Cycle and Frequency
ForaSEPICconverteroperatinginCCM,thedutycycle
ofthemainswitchcanbecalculatedbasedontheoutput
voltage (V
OUT
), the input voltage (V
IN
) and the diode
forwardvoltage(V
D
).
Themaximumdutycycle(D
MAX
)occurswhentheconverter
hastheminimuminputvoltage:

D
V V
V V V
MAX
OUT D
IN MIN OUT D
=
+
+ +
( )
SEPIC Converter: Inductor and Sense Resistor Selection
AsshowninFigure1,theSEPICconvertercontainstwo
inductors:L1andL2.L1andL2canbeindependent,but
canalsobewoundonthesamecore,sinceidenticalvolt-
agesareappliedtoL1andL2throughouttheswitching
cycle.
For the SEPIC topology, the current through L1 is the
converterinputcurrent.Basedonthefactthat,ideally,the
outputpowerisequaltotheinputpower,themaximum
averageinductorcurrentsofL1andL2are:

I I I
D
D
I
L MAX IN MAX O MAX
MAX
MAX
L MAX
1
2
1
( ) ( ) ( )
(
= =

)) ( )
=I
O MAX
InaSEPICconverter,theswitchcurrentisequaltoI
L1
+
I
L2
whenthepowerswitchison,therefore,themaximum
averageswitchcurrentisdefinedas:

I I I I
D
SW MAX L MAX L MAX O MAX
MAX
( ) ( ) ( ) ( )
= + =

1 2
1
1
andthepeakswitchcurrentis:

I I
D
SW PEAK O MAX
MAX
( ) ( )
= +

1
2
1
1
c
Theconstant
c
intheprecedingequationsrepresentsthe
percentagepeak-to-peakripplecurrentintheswitch,rela-
tivetoI
SW(MAX)
,asshowninFigure9.Then,theswitch
ripplecurrentI
SW
canbecalculatedby:
I
SW
=
c
I
SW(MAX)
TheinductorripplecurrentsI
L1
andI
L2
areidentical:
I
L1
=I
L2
=0.5I
SW
The inductor ripple current has a direct effect on the
choiceoftheinductorvalue.Choosingsmallervaluesof
I
L
requires large inductances and reduces the current
loop gain (the converter will approach voltage mode).
AcceptinglargervaluesofI
L
allowstheuseoflowin-
ductances,butresultsinhigherinputcurrentrippleand
greatercorelosses.Itisrecommendedthat
c
fallsinthe
rangeof0.2to0.4.
LT3757
23
3757fb
Givenanoperatinginputvoltagerange,andhavingchosen
theoperatingfrequencyandripplecurrentintheinduc-
tor,theinductorvalue(L1andL2areindependent)ofthe
SEPICconvertercanbedeterminedusingthefollowing
equation:

L L
V
I f
D
IN MIN
SW
MAX
1 2
0 5
= =
( )
.

For most SEPIC applications, the equal inductor values

willfallintherangeof1Hto100H.
BymakingL1=L2,andwindingthemonthesamecore,the
valueofinductanceintheprecedingequationisreplaced
by2L,duetomutualinductance:

L
V
I f
D
IN MIN
SW
MAX
=
( )

Thismaintainsthesameripplecurrentandenergystorage
intheinductors.Thepeakinductorcurrentsare:
I
L1(PEAK)
=I
L1(MAX)
+0.5I
L1
I
L2(PEAK)
=I
L2(MAX)
+0.5I
L2
TheRMSinductorcurrentsare:

I I
L RMS L MAX
L
1 1
2
1
1
12
( ) ( )
= +
c
where:

c
L
L
L MAX
I
I
1
1
1
=

( )

I I
L RMS L MAX
L
2 2
2
2
1
12
( ) ( )
= +
c
where:

c
L
L
L MAX
I
I
2
2
2
=

( )
Basedontheprecedingequations,theusershouldchoose
theinductorshavingsufficientsaturationandRMScur-
rentratings.
InaSEPICconverter,whenthepowerswitchisturnedon,
thecurrentflowingthroughthesenseresistor(I
SENSE
)is
theswitchcurrent.
SetthesensevoltageatI
SENSE(PEAK)
tobetheminimum
oftheSENSEcurrentlimitthresholdwitha20%margin.
Thesenseresistorvaluecanthenbecalculatedtobe:

R
mV
I
SENSE
SW PEAK
=
80
( )
SEPIC Converter: Power MOSFET Selection
For the SEPIC configuration, choose a MOSFET with a
V
DC
ratinghigherthanthesumoftheoutputvoltageand
inputvoltagebyasafetymargin(a10Vsafetymarginis
usuallysufficient).
The power dissipated by the MOSFET in a SEPIC con-
verteris:
P
FET
=I
2
SW(MAX)
R
DS(ON)
D
MAX
+2(V
IN(MIN)
+V
OUT
)
2
I
L(MAX)
C
RSS
f/1A
Thefirstterminthisequationrepresentstheconduction
lossesinthedevice,andthesecondterm,theswitching
loss. C
RSS
is the reverse transfer capacitance, which is
usuallyspecifiedintheMOSFETcharacteristics.
For maximum efficiency, R
DS(ON)
and C
RSS
should be
minimized.Fromaknownpowerdissipatedinthepower
MOSFET,itsjunctiontemperaturecanbeobtainedusing
thefollowingequation:
T
J
=T
A
+P
FET

JA
=T
A
+P
FET
(
JC
+
CA
)
T
J
must not exceed the MOSFET maximum junction
temperature rating. It is recommended to measure the
MOSFETtemperatureinsteadystatetoensurethatabsolute
maximumratingsarenotexceeded.
applicaTions inForMaTion
LT3757
24
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applicaTions inForMaTion
Figure 10. A Simplified Inverting Converter
R
SENSE
C
DC
V
IN
C
IN
L1
D1 C
OUT
V
OUT
3757 F09
+
GATE
GND
LT3757
SENSE
L2
M1
+

+
+
SEPIC Converter: Output Diode Selection
Tomaximizeefficiency,afastswitchingdiodewithalow
forward drop and low reverse leakage is desirable. The
averageforwardcurrentinnormaloperationisequalto
theoutputcurrent,andthepeakcurrentisequalto:

I I
D
D PEAK O MAX
MAX
( ) ( )
= +

1
2
1
1
c
Itisrecommendedthatthepeakrepetitivereversevoltage
rating V
RRM
is higher than V
OUT
+ V
IN(MAX)
by a safety
margin(a10Vsafetymarginisusuallysufficient).
Thepowerdissipatedbythediodeis:
P
D
=I
O(MAX)
V
D
andthediodejunctiontemperatureis:
T
J
=T
A
+P
D
R
JA
TheR
JA
usedinthisequationnormallyincludestheR
JC

forthedevice,plusthethermalresistancefromtheboard,
totheambienttemperatureintheenclosure.T
J
mustnot
exceedthediodemaximumjunctiontemperaturerating.
SEPIC Converter: Output and Input Capacitor Selection
Theselectionsoftheoutputandinputcapacitorsofthe
SEPICconverteraresimilartothoseoftheboostconverter.
Please refer to the Boost Converter, Output Capacitor
SelectionandBoostConverter,InputCapacitorSelection
sections.
SEPIC Converter: Selecting the DC Coupling Capacitor
TheDCvoltageratingoftheDCcouplingcapacitor(C
DC
,
asshowninFigure1)shouldbelargerthanthemaximum
inputvoltage:
V
CDC
>V
IN(MAX)
C
DC
has nearly a rectangular current waveform. During
theswitchoff-time,thecurrentthroughC
DC
isI
IN
,while
approximately I
O
flows during the on-time. The RMS
ratingofthecouplingcapacitorisdeterminedbythefol-
lowingequation:

I I
V V
V
RMS CDC O MAX
OUT D
IN MIN
( ) ( )
( )
>
+
AlowESRandESL,X5RorX7Rceramiccapacitorworks
wellforC
DC
.
INVERTING CONVERTER APPLICATIONS
TheLT3757canbeconfiguredasadual-inductorinvert-
ing topology, as shown in Figure 10. The V
OUT
to V
IN

ratiois:

V V
V
D
D
OUT D
IN

=
1
incontinuousconductionmode(CCM).
LT3757
25
3757fb
Inverting Converter: Switch Duty Cycle and Frequency
ForaninvertingconverteroperatinginCCM,thedutycycle
ofthemainswitchcanbecalculatedbasedonthenegative
outputvoltage(V
OUT
)andtheinputvoltage(V
IN
).
Themaximumdutycycle(D
MAX
)occurswhentheconverter
hastheminimuminputvoltage:

D
V V
V V V
MAX
OUT D
OUT D IN MIN
=


( )
Inverting Converter: Inductor, Sense Resistor, Power
MOSFET, Output Diode and Input Capacitor Selections
The selections of the inductor, sense resistor, power
MOSFET,outputdiodeandinputcapacitorofaninverting
converteraresimilartothoseoftheSEPICconverter.Please
refertothecorrespondingSEPICconvertersections.
Inverting Converter: Output Capacitor Selection
The inverting converter requires much smaller output
capacitors than those of the boost, flyback and SEPIC
convertersforsimilaroutputripples.Thisisduetothefact
that,intheinvertingconverter,theinductorL2isinseries
withtheoutput,andtheripplecurrentflowingthroughthe
outputcapacitorsarecontinuous.Theoutputripplevoltage
isproducedbytheripplecurrentofL2flowingthroughthe
ESRandbulkcapacitanceoftheoutputcapacitor:

V I ESR
f C
OUT P P L COUT
OUT
( )


= +

2
1
8
Afterspecifyingthemaximumoutputripple,theusercan
selecttheoutputcapacitorsaccordingtothepreceding
equation.
TheESRcanbeminimizedbyusinghighqualityX5Ror
X7Rdielectricceramiccapacitors.Inmanyapplications,
ceramiccapacitorsaresufficienttolimittheoutputvolt-
ageripple.
The RMS ripple current rating of the output capacitor
needstobegreaterthan:
I
RMS(COUT)
>0.3I
L2
Inverting Converter: Selecting the DC Coupling Capacitor
The DC voltage rating of the DC coupling capacitor
(C
DC
,asshowninFigure10)shouldbelargerthanthe
maximuminputvoltageminustheoutputvoltage(nega-
tivevoltage):
V
CDC
>V
IN(MAX)
V
OUT
C
DC
has nearly a rectangular current waveform. During
theswitchoff-time,thecurrentthroughC
DC
isI
IN
,while
approximately I
O
flows during the on-time. The RMS
ratingofthecouplingcapacitorisdeterminedbythefol-
lowingequation:

I I
D
D
RMS CDC O MAX
MAX
MAX
( ) ( )
>
1
AlowESRandESL,X5RorX7Rceramiccapacitorworks
wellforC
DC
.
applicaTions inForMaTion
LT3757
26
3757fb
applicaTions inForMaTion
Figure 11. 8V to 16V Input, 24V/2A Output Boost Converter Suggested Layout
V
IN
3757 F10
V
OUT
L1
VIAS TO GROUND
PLANE
D1
C
OUT1
C
OUT2
1
2
8
7
3
4
6
5
M1
C
IN
R
4
R
C
R1
R2
R
SS
R
T
R3
C
VCC
C
C1
C
C2
LT3757
1
2
3
4
5
9
10
6
7
8
R
S
Board Layout
ThehighspeedoperationoftheLT3757demandscareful
attentiontoboardlayoutandcomponentplacement.The
ExposedPadofthepackageistheonlyGNDterminalof
theIC,andisimportantforthermalmanagementofthe
IC.Therefore,itiscrucialtoachieveagoodelectricaland
thermalcontactbetweentheExposedPadandtheground
planeoftheboard.FortheLT3757todeliveritsfulloutput
power,itisimperativethatagoodthermalpathbepro-
videdtodissipatetheheatgeneratedwithinthepackage.
Itisrecommendedthatmultipleviasintheprintedcircuit
boardbeusedtoconductheatawayfromtheICandinto
acopperplanewithasmuchareaaspossible.
To prevent radiation and high frequency resonance
problems, proper layout of the components connected
to the IC is essential, especially the power paths with
higher di/dt. The following high di/dt loops of different
topologiesshouldbekeptastightaspossibletoreduce
inductiveringing:
In boost configuration, the high di/dt loop contains
the output capacitor, the sensing resistor, the power
MOSFETandtheSchottkydiode.
In flyback configuration, the high di/dt primary loop
containstheinputcapacitor,theprimarywinding,the
power MOSFET and the sensing resistor. The high
di/dtsecondaryloopcontainstheoutputcapacitor,the
secondarywindingandtheoutputdiode.
In SEPIC configuration, the high di/dt loop contains
the power MOSFET, sense resistor, output capacitor,
Schottkydiodeandthecouplingcapacitor.
Ininvertingconfiguration,thehighdi/dtloopcontains
powerMOSFET,senseresistor,Schottkydiodeandthe
couplingcapacitor.
LT3757
27
3757fb
Table 2. Recommended Component Manufacturers
VENDOR COMPONENTS WEB ADDRESS
AVX Capacitors avx.com
BHElectronics Inductors,
Transformers
bhelectronics.com
Coilcraft Inductors coilcraft.com
CooperBussmann Inductors bussmann.com
Diodes,Inc Diodes diodes.com
Fairchild MOSFETs fairchildsemi.com
General
Semiconductor
Diodes generalsemiconductor.com
InternationalRectifier MOSFETs,Diodes irf.com
IRC SenseResistors irctt.com
Kemet Capacitors kemet.com
MagneticsInc ToroidCores mag-inc.com
Microsemi Diodes microsemi.com
Murata-Erie Inductors,
Capacitors
murata.co.jp
Nichicon Capacitors nichicon.com
OnSemiconductor Diodes onsemi.com
Panasonic Capacitors panasonic.com
Sanyo Capacitors sanyo.co.jp
Sumida Inductors sumida.com
TaiyoYuden Capacitors t-yuden.com
TDK Capacitors,
Inductors
component.tdk.com
Thermalloy HeatSinks aavidthermalloy.com
Tokin Capacitors nec-tokinamerica.com
Toko Inductors tokoam.com
UnitedChemicon Capacitors chemi-com.com
Vishay/Dale Resistors vishay.com
Vishay/Siliconix MOSFETs vishay.com
Vishay/Sprague Capacitors vishay.com
WrthElectronik Inductors we-online.com
Zetex Small-Signal
Discretes
zetex.com
applicaTions inForMaTion
CheckthestressonthepowerMOSFETbymeasuringits
drain-to-sourcevoltagedirectlyacrossthedeviceterminals
(referencethegroundofasinglescopeprobedirectlyto
the source pad on the PC board). Beware of inductive
ringing,whichcanexceedthemaximumspecifiedvoltage
ratingoftheMOSFET.Ifthisringingcannotbeavoided,
and exceeds the maximum rating of the device, either
chooseahighervoltagedeviceorspecifyanavalanche-
ratedpowerMOSFET.
Thesmall-signalcomponentsshouldbeplacedawayfrom
highfrequencyswitchingnodes.Foroptimumloadregula-
tionandtrueremotesensing,thetopoftheoutputvoltage
sensingresistordividershouldconnectindependentlyto
thetopoftheoutputcapacitor(Kelvinconnection),staying
awayfromanyhighdV/dttraces.Placethedividerresis-
torsneartheLT3757inordertokeepthehighimpedance
FBXnodeshort.
Figure11showsthesuggestedlayoutofthe8Vto16V
Input,24V/2AOutputBoostConverter.
Recommended Component Manufacturers
Some of the recommended component manufacturers
arelistedinTable2.
LT3757
28
3757fb
Typical applicaTions
3.3V Input, 5V/10A Output Boost Converter
Efficiency vs Output Current
SENSE
LT3757
V
IN
V
IN
3.3V
C
IN
22F
6.3V
s2
V
OUT
5V
10A
0.004
1W
M1
41.2k
300kHz
GATE
FBX
GND
INTV
CC
SHDN/UVLO
SYNC
RT
SS
VC
49.9k
34k
0.1F
6.8k
22nF 2.2nF
22
L1
0.5H
D1
3757 TA02a
34k
1%
15.8k
1%
C
OUT1
150F
6.3V
s4
C
OUT2
22F
6.3V
X5R
s4
+
C
VCC
4.7F
10V
X5R
C
IN
: TAIYO YUDEN JMK325BJ226MM
C
OUT1
: PANASONIC EEFUEOJ151R
C
OUT2
: TAIYO YUDEN JMK325BJ226MM
D1: MBRB2515L
L1: VISHAY SILICONIX IHLP-5050FD-01
M1: VISHAY SILICONIX SI4448DY
OUTPUT CURRENT (A)
E
F
F
I
C
I
E
N
C
Y

(
%
)
3757 TA02b
0.001
20
30
40
50
60
70
80
90
100
0.01 0.1 1 10
LT3757
29
3757fb
Typical applicaTions
8V to 16V Input, 24V/2A Output Boost Converter
Efficiency vs Output Current Load Step Response at V
IN
= 12V
SENSE
LT3757
V
IN
V
IN
8V TO 16V
C
IN
10F
25V
X5R
C
VCC
4.7F
10V
X5R
V
OUT
24V
2A
R
S
0.01
1W
M1
R
T
41.2k
300kHz
GATE
FBX
GND INTV
CC
SHDN/UVLO
SYNC
RT
SS
VC
R3
200k
R4
43.2k
C
SS
0.1F
C
C2
100pF
R
C
22k
C
C1
6.8nF
L1
10H
D1
3757 TA03a
R2
226k
1%
R1
16.2k
1%
C
OUT1
47F
35V
s4
C
OUT2
10F
25V
X5R
+
C
IN
, C
OUT2
: MURATA GRM31CR61E106KA12
C
OUT1
: KEMET T495X476K035AS
D1: ON SEMI MBRS340T3G
L1: VISHAY SILICONIX IHLP-5050FD-01 10H
M1: VISHAY SILICONIX Si4840BDP
OUTPUT CURRENT (A)
0.001
E
F
F
I
C
I
E
N
C
Y

(
%
)
30
50
40
60
70
80
90
100
0.01 0.1 1
3757 TA03b
10
V
IN
= 8V
V
IN
= 16V
500s/DIV
V
OUT
500mV/DIV
(AC)
1.6A
0.4A
I
OUT
1A/DIV
3757 TA03c
LT3757
30
3757fb
2ms/DIV
V
OUT
100V/DIV
3757 TA04b
5s/DIV
V
OUT
5V/DIV
(AC)
V
SW
20V/DIV
3757 TA04c
Typical applicaTions
High Voltage Flyback Power Supply
Start-Up Waveforms Switching Waveforms
SENSE
LT3757
V
IN
V
SW
V
IN
5V TO 12V
C
IN
150F
6.3V
s2
INTV
CC
C
OUT
68nF
s2
V
OUT
350V
10mA
0.02
22
M1
140k
100kHz
GATE
FBX GND
SHDN/UVLO
DANGER! HIGH VOLTAGE OPERATION BY HIGH VOLTAGE TRAINED PERSONNEL ONLY
SYNC
RT
SS
VC

105k
46.4k
0.1F
220pF
100pF
6.8k
22nF
T1
1:10
D1
C
IN
: MURATA GRM32DR61C106K
C
OUT
: TDK C3225X7R2J683K
D1: VISHAY SILICONIX GSD2004S DUAL DIODE CONNECTED IN SERIES
M1: VISHAY SILICONIX Si7850DP
T1: TDK DCT15EFD-U44S003
3757 TA04a
1M
1%
1M
1%
1.50M
1%
16.2k
1%
10nF
C
VCC
47F
25V
X5R
22
LT3757
31
3757fb
Typical applicaTions
5.5V to 36V Input, 12V/2A Output SEPIC Converter
Efficiency vs Output Current Load Step Waveforms
Start-Up Waveforms Frequency Foldback Waveforms When Output Short-Circuits
SENSE
LT3757
V
IN
V
IN
5.5V TO 36V
C
IN
4.7F
50V
s2
C
DC
4.7F
50V, X5R, s2
4.7F
10V
X5R
V
OUT
12V
2A
0.008
1W
M1
41.2k
300kHz
GATE
FBX
GND INTV
CC
SHDN/UVLO
SYNC
RT
SS
VC

105k
46.4k
0.1F 6.8nF
10k
L1A
L1B I
L1B
D1
C
IN
, C
DC
: TAIYO YUDEN UMK316BJ475KL
C
OUT1
: KEMET T495X476K020AS
C
OUT2
: TAIYO YUDEN TMK432BJ106MM
D1: ON SEMI MBRS360T3G
L1A, L1B: COILTRONICS DRQ127-3R3 (*COUPLED INDUCTORS)
M1: VISHAY SILICONIX Si7460DP
3757 TA05a
105k
1%
15.8k
1%
C
OUT1
47F
20V
s2
C
OUT2
10F
25V
X5R
+
V
SW
I
L1A
500s/DIV
V
OUT
200mV/DIV
(AC)
1.6A
0.4A
I
OUT
1A/DIV
3757 TA05c
2ms/DIV
V
OUT
5V/DIV
I
L1A
+ I
L1B
5A/DIV
3757 TA05d
V
IN
= 12V
50s/DIV
V
OUT
10V/DIV
V
SW
20V/DIV
I
L1A
+ I
L1B
5A/DIV
3757 TA05e
V
IN
= 12V
OUTPUT CURRENT (A)
0.001
20
E
F
F
I
C
I
E
N
C
Y

(
%
)
30
40
50
60
70
80
90
100
0.01 0.1 1
3757 TA05b
10
V
IN
= 16V
V
IN
= 8V
LT3757
32
3757fb
Typical applicaTions
5V to 12V Input, 12V/0.2A Output SEPIC Converter
Nonisolated Inverting SLIC Supply
SENSE
LT3757
V
IN
V
IN
5V TO 12V
C
IN1
1F
16V, X5R
C
IN2
47F
16V
C
DC1
4.7F
16V, X5R
C
DC2
4.7F
16V
X5R
C
OUT2
4.7F
16V, X5R
s3
V
OUT1
12V
0.4A
V
OUT2
12V
0.4A
C
OUT2
4.7F
16V, X5R
s3
C
VCC
4.7F
10V
X5R
0.02
M1
30.9k
400kHz
D1, D2: MBRS140T3
T1: COILTRONICS VP1-0076 (*PRIMARY = 4 WINDINGS IN PARALLEL)
M1: SILICONIX/VISHAY Si4840BDY
GATE
FBX
GND INTV
CC
SHDN/UVLO
SYNC
RT
SS
VC

+
105k
46.4k
0.1F 100pF
22k
6.8nF
T1
1,2,3,4
D1
GND
1.05k
1%
158
1%
D2
5
6

3757 TA06
SENSE
LT3757
V
IN
V
IN
5V TO 16V
C
IN
22F
25V, X5R
s2
C2
10F
50V
X5R
D1
DFLS160
C
VCC
4.7F
10V, X5R
C3
22F
25V
X5R
C4
22F
25V
X5R
C
OUT
3.3F
100V
GND
C5
22F
25V
X5R
V
OUT1
24V
200mA
V
OUT1
72V
200mA
0.012
0.5W
M1
Si7850DP
63.4k
200kHz
GATE
FBX
GND INTV
CC
SHDN/UVLO
SYNC
RT
SS
VC

R2
105k
R1
46.4k
0.1F
100pF
15.8k
464k
9.1k
10nF
T1
1,2,3
4
D2
DFLS160
5
D3
DFLS160
6
VP5-0155 (PRIMARY = 3 WINDINGS IN PARALLEL)
3757 TA07
LT3757
33
3757fb
package DescripTion
3.00 p0.10
(4 SIDES)
NOTE:
1. DRAWING TO BE MADE A JEDEC PACKAGE OUTLINE M0-229 VARIATION OF (WEED-2).
CHECK THE LTC WEBSITE DATA SHEET FOR CURRENT STATUS OF VARIATION ASSIGNMENT
2. DRAWING NOT TO SCALE
3. ALL DIMENSIONS ARE IN MILLIMETERS
4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE
MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE
5. EXPOSED PAD SHALL BE SOLDER PLATED
6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION ON THE
TOP AND BOTTOM OF PACKAGE
0.40 p 0.10
BOTTOM VIEWEXPOSED PAD
1.65 p 0.10
(2 SIDES)
0.75 p0.05
R = 0.125
TYP
2.38 p0.10
(2 SIDES)
1 5
10 6
PIN 1
TOP MARK
(SEE NOTE 6)
0.200 REF
0.00 0.05
(DD) DFN REV B 0309
0.25 p 0.05
2.38 p0.05
(2 SIDES)
RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS
1.65 p0.05
(2 SIDES) 2.15 p0.05
0.50
BSC
0.70 p0.05
3.55 p0.05
PACKAGE
OUTLINE
0.25 p 0.05
0.50 BSC
DD Package
10-Lead Plastic DFN (3mm 3mm)
(ReferenceLTCDWG#05-08-1699RevB)
LT3757
34
3757fb
package DescripTion
MSOP (MSE) 0908 REV C
0.53 p 0.152
(.021 p .006)
SEATING
PLANE
0.18
(.007)
1.10
(.043)
MAX
0.17 0.27
(.007 .011)
TYP
0.86
(.034)
REF
0.50
(.0197)
BSC
1 2 3 4 5
4.90 p 0.152
(.193 p .006)
0.497 p 0.076
(.0196 p .003)
REF
8 9 10
10
1
7 6
3.00 p 0.102
(.118 p .004)
(NOTE 3)
3.00 p 0.102
(.118 p .004)
(NOTE 4)
NOTE:
1. DIMENSIONS IN MILLIMETER/(INCH)
2. DRAWING NOT TO SCALE
3. DIMENSION DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.
MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.152mm (.006") PER SIDE
4. DIMENSION DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSIONS.
INTERLEAD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.152mm (.006") PER SIDE
5. LEAD COPLANARITY (BOTTOM OF LEADS AFTER FORMING) SHALL BE 0.102mm (.004") MAX
0.254
(.010)
0o 6o TYP
DETAIL A
DETAIL A
GAUGE PLANE
5.23
(.206)
MIN
3.20 3.45
(.126 .136)
0.889 p 0.127
(.035 p .005)
RECOMMENDED SOLDER PAD LAYOUT
0.305 p 0.038
(.0120 p .0015)
TYP
2.083 p 0.102
(.082 p .004)
2.794 p 0.102
(.110 p .004)
0.50
(.0197)
BSC
BOTTOM VIEW OF
EXPOSED PAD OPTION
1.83 p 0.102
(.072 p .004)
2.06 p 0.102
(.081 p .004)
0.1016 p 0.0508
(.004 p .002)
DETAIL B
DETAIL B
CORNER TAIL IS PART OF
THE LEADFRAME FEATURE.
FOR REFERENCE ONLY
NO MEASUREMENT PURPOSE
0.05 REF
0.29
REF
MSE Package
10-Lead Plastic MSOP, Exposed Die Pad
(ReferenceLTCDWG#05-08-1664RevC)
LT3757
35
3757fb
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However,noresponsibilityisassumedforitsuse.LinearTechnologyCorporationmakesnorepresenta-
tionthattheinterconnectionofitscircuitsasdescribedhereinwillnotinfringeonexistingpatentrights.
revision hisTory
REV DATE DESCRIPTION PAGE NUMBER
B 3/10 DeletedBulletfromFeaturesandLastLineofDescription
UpdatedEntirePagetoAddH-GradeandMilitaryGrade
UpdatedElectricalCharacteristicsNotesandTypicalPerformanceCharacteristicsforH-GradeandMilitaryGrade
RevisedTA04aandReplacedTA04cinTypicalApplications
UpdatedRelatedParts
1
2
4to6
30
36
(Revision history begins at Rev B)
LT3757
36
3757fb
Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408)432-1900

FAX:(408)434-0507

www.linear.com LINEAR TECHNOLOGY CORPORATION 2008

LT 0310 REV B PRINTED IN USA
relaTeD parTs
Typical applicaTion
PART NUMBER DESCRIPTION COMMENTS
LT3758 Boost,Flyback,SEPICandInvertingController 2.9VV
IN
100V,CurrentModeControl,100kHzto1MHzProgrammable
OperationFrequency,3mm3mm10-LeadDFNand10-LeadMSOP-E
Packages
LT3573 IsolatedFlybackSwitchingRegulatorwith60V
IntegratedSwitch
3VV
IN
40V,NoOpto-IsolatororThirdWindingRequired,Upto7W,
16-LeadMSOP-EPackage
LTC1871/LTC1871-1/
LTC1871-7
Boost,FlybackandSEPICController,NoR
SENSE
,
LowQuiescentCurrent
AdjustableSwitchingFrequency,2.5VV
IN
36V,BurstMode

Operationat
LightLoads
LTC3872 Boost,Flyback,SEPICController 2.75VV
IN
9.8V,23-LeadThinSotand2mm3mm8-LeadDFN
Packages
LT3837 IsolatedNo-OptoSynchronousFlybackController IdealforV
IN
from4.5Vto36VLimitedbyExternalComponents,Upto60W,
CurrentModeControl
LT3825 IsolatedNo-OptoSynchronousFlybackController V
IN
16Vto75VLimitedbyExternalComponents,Upto60W,CurrentMode
Control
LTC3803/LTC3803-3/
LTC3803-5
200kHzFlybackDC/DCController V
IN
andV
OUT
LimitedOnlybyExternalComponents,6-LeadThinSotPackage
LTC3805/LTC3805-5 AdjustableFixed70kHzto700kHzOperating
FrequencyFlybackController
V
IN
andV
OUT
LimitedOnlybyExternalComponents,3mm3mm10-Lead
DFN,10-LeadMSOP-EPackages
High Efficiency Inverting Power Supply
Efficiency vs Output Current
OUTPUT CURRENT (A)
0.001
10
E
F
F
I
C
I
E
N
C
Y

(
%
)
20
30
40
50
60
70
80
90
100
0.01 0.1 1
3757 TA08b
10
V
IN
= 16V
V
IN
= 5V
SENSE
LT3757
V
IN
V
IN
5V TO
15V
C
IN
47F
16V
X5R
C
DC
47F
25V, X5R
V
OUT
5V
3A to 5A
0.006
1W
M1
Si7848BDP
41.2k
300kHz
GATE
FBX
GND INTV
CC
SHDN/UVLO
SYNC
RT
SS
VC

R2
105k
R1
46.4k
0.1F
9.1k
10nF
L1
L2
D1
MBRD835L
L1, L2: COILTRONICS DRQ127-3R3 (*COUPLED INDUCTORS) 3757 TA08a
84.5k
16k
C
VCC
4.7F
10V
X5R
C
OUT
100F
6.3V, X5R
s2