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Microwave 2 Marks

1. Microwave devices described include terminators, attenuators, magic tees, phase shifters, power dividers, PIN diodes, H-plane tees, E-plane tees, and directional couplers. Terminators absorb power without reflection, attenuators control power levels, and magic tees, phase shifters, and power dividers alter signal paths. 2. Devices like the Gunn diode, IMPATT diode, and klystron are also covered. The Gunn diode exhibits negative differential mobility above a threshold electric field, causing transferred electron effect. IMPATT diodes have low efficiency and are noisy. Klystrons use velocity modulation and bunching to amplify microw

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37 views2 pages

Microwave 2 Marks

1. Microwave devices described include terminators, attenuators, magic tees, phase shifters, power dividers, PIN diodes, H-plane tees, E-plane tees, and directional couplers. Terminators absorb power without reflection, attenuators control power levels, and magic tees, phase shifters, and power dividers alter signal paths. 2. Devices like the Gunn diode, IMPATT diode, and klystron are also covered. The Gunn diode exhibits negative differential mobility above a threshold electric field, causing transferred electron effect. IMPATT diodes have low efficiency and are noisy. Klystrons use velocity modulation and bunching to amplify microw

Uploaded by

lmcet Principal
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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1, Terminators are used in coaxial line, strip lines and waveguides to absorb the

incident power without appreciable reflection and radiation.


2. Attenuators are passive device used to control power levels in a microwave system
by partially absorbing the transmitted signal.
3, The magic-tee is a combination of the E-plane tee and H-plane-tee. It is a four port hybrid
circuit. It is also known as hybrid-tee.
4, Phase shifter is a device which provides variable insertion phase in a microwave signal path
without altering the physical path length.
5, A power divider is a device to split the input power into a smaller amounts of power at
multiple ports (N) to feed N number of branching circuits with isolation between the output
ports.
6, A PIN diode consists of a high resistivity intrinsic semiconductor layer between two highly
doped p+ and n+ semiconductor (Si, GaAs) layers. The device act as an electrically variable
resistor related to the i layer thickness. It is used as microwave swich.
7,An H-plane tee is a waveguide tee in which the axis of its side arm is shunting the E yield or
parallel to the H-field of the main guide.
8, An E-plane tee is a waveguide tee in which the axis of its side arm is parallel to the E- field of
the main guide.
9, A magic tee is used to Measurement of impedance, as duplexer, as mixer, as an isolator
10, Directional couplers are transmission line devices that couple together two circuits in one
direction, while providing a great degree of isolation in the opposite direction.
11,The coupling factor of a directional coupler is defined as the ratio of the incident power ‘Pi’
to the forward power ‘Pf’ measured in dBCoupling factor(dB)=10log10Pi/Pf
12, The directivity of a directional coupler is defined as the ratio of forward power ‘Pf’ to the
back power ‘Pb’ expressed in dB.
13, Different types of directional couplers -Two-hole DC, Four-hole DC,Reverse- coupling
DC(Schwinger coupler), Bethe- hole directional coupler
14.A non-reciprocal device does not have same electrical characteristics in all direction.
15.Some materials like GaAs exhibit a negative differential mobility when biased above a
threshold value of the electric field. The electrons in the lower – energy band will be transferred
into the higher-energy band. The behavior is called transferred electron effect and the device is
called transferred electron device or Gunn diode.
16. The carrier drift velocity is linearly increased from zero to a maximum when the electric field
is varied from zero to a threshold value. When the electric field is beyond the threshold value of
3000V/cm, the drift velocity is decreased and the diode exhibits negative resistance.
17,Various modes of operation of Gunn diode -Gunn oscillation mode,Stable amplification
mode.LSA oscillation mode. [Limited Space charge Accumulation]Bias circuit oscillation mode.
18, The major disadvantages of the IMPATT diodes are 1, Dc power is drawn due to induced
electron current in the external circuit, IMPATT diodes have low efficiency.
2, Tend to be noisy due to the avalanche process and to the high level of operating current. (3)A
typical noise figure is 30dB which is worse than that of Gunn diodes.
18, The time taken by an electron to travel from the cathode to the anode plate of an electron
tube is known as transit time
19, There are two basic configurations of Klystron tubes -Reflex Klystron – It is used as low
power microwave oscillator 2, Two cavity (or) Multicavity Klystron – It is used as low power
microwave amplifier.
20, The separation between buncher and catcher girds is called as drift space.
21, The variation in electron velocity in the drift space is known as velocity modulation.
22, The electrons passing the first cavity gap at zeros of the gap voltage pass through with
unchanged velocity, those passing through the positive half cycles of gap voltage undergo an
increase in velocity, those passing through the negative half cycles of gap voltage undergo an
decrease in velocity, As a result of these, electron bunch together in drift space. This is called
bunching.
23,The reflex klystron is an oscillator with a built in feedback mechanism. It uses the cavity for
bunching and for the output cavity.
24,A traveling wave tube amplifier (TWTA) circuit uses a helix slow – wave non resonant
microwave guiding structure. It is a broadband device.
25,Negative – resistance magnetrons ordinarily operate at frequencies below the microwave
region. This type of magnetron uses a static negative resistance between two anode segments but
has low efficiency and is useful only at low frequencies

1.Explain the operation of H-plane tee and E- plane tee and derive the S matrix for it.
2.Explain the construction of Magic tee and derive the S matrix for it.
3.Explain the operation of Directional coupler, derive its S parameter.
4.Explain the operation of circulator.
5.Explain the operation of phase shifter.
6.Explain the operation of PIN diode switch
7.Explain in detail about Gunn diode with neat diagram
8.Describe the modes of operation for Gunn diode?
9.Explain the operation, construction and applications of IMPATT.
10,Explain the operation, process & equation of velocity modulation & bunching a two cavity
klystron amplifier
11Draw and explain the operation of Reflex klystron oscillator
12,Explain the working of a helix type TWT amplifier with neat sketch.
13,Explain the construction and working of magnetron

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