Form 5 Chapter 5

Paper 1 Questions :

1D
2C
3C
4B
5D
6A
7D
8C
9C
10A
11C
12B
13D
14B
15C
16C
17D
18C
19D
20A
21D
22D
23C
24C
25C
26C
27A
28D
29C
30C
31B
32C
33B
34B
35B
36B
37B
38B
39D
40B
41C
42A
43A
44D
45C
46C
47A
48D
49A
50B
51A
52C
53B
54C
55C

Paper 2 Questions :
1

·
2
3

5
6
7.(a) A beam of fast moving electron
(b) The voltage supplied in Diagram 10.1 is smaller than that in
Diagram 10.2
The strength of electric field in Diagram 10.1 is smaller than
that in Diagram 10.2.
The deflection of the cathode ray in Diagram 10.1 is smaller
than that in Diagram 10.2
When the value of voltage supplied is smaller, the strength of
electric field is lower
The smaller the strength of electric field, the less the
deflection of the cathode ray
(c) When the cathode is heated, electrons are emitted on the
surface // thermionic emission.
Electrons then accelerate/ attracted to anode
The electrons travel in straight line
The electrons / cathode ray stopped by the Maltese Cross
produce shadow.

8. (a) A substance that has a conductivity between the conductivity

of an insulator and a conductor / metal
(b)(i) To increase the conductivity // To reduce the resistivity
(ii) Doping with boron produces a p-type semiconductor
Majority charge carriers are holes
Doping with phosphorus produces a n-type semiconductor
Majority charge carriers are electrons
(c) During the first half cycle :
the resistance of the diode is low
a current flows in the circuit // the diode is forward biased
During the next half cycle :
the resistance of the diode is very high
no current flows in the circuit // the diode is reverse biased
 (d)

thermistor replaces the resistor

resistor replaces the LDR
bell replaces the bulb
complete circuit

When the surrounding is hot :

the resistance of the thermistor decreases
the potential difference across the thermistor decreases
the potential difference across the resistor increases
the base current increases
the transistor is switched on
the collector current flows

9.(a) Semikonduktor ialah bahan yang mempunyai kekonduksian

antara penebat yang baik dengan konduktor yang baik.
Semiconductor ia a material which has electrical
conductivity between those of good insulators and those of
good conductors.
(b) - Dalam Rajah 10.1, mentol menyala.
- In Diagram 10.1, the bulb lights up.
-Dalam Rajah 10.2, mentol tidak menyala.
-In Diagram 10.2, the bulb does not light up.
-Arus hanya mengalir dalam litar dalam Rajah 10.1.
-Current does not flows in circuit in Diagram 10.2.

-Dalam Rajah, 10.1, diod dipincang depan di mana terminal

positif
 diod disambung pada simpang p.
- In Diagram 10.1, the diode is forward-biased where the
positive
terminal of the diode is connected to the p junction.
-Dalam Rajah 10.2, diod dipincang songsang di mana
terminal
positif diod disambung pada simpang n.

- In Diagram 10.2, diode is reversed-biased where the

positive
terminal of the diode is connected to the n junction.

Konsep fizik/Physics concept

Apabila diod dipincang songsang, mentol tidak akan menyala
kerana tiada aliran arus dalam litar itu.
When a diode is reverse-biased, bulb will not ljght up as
current does not flow in the circuit.
Apabila diod dipincang depan, mentol menyala kerana
tedapat aliran arus dalam litar itu.
When a diode is forward-biased, bulb lights up as there is
current flow in the circuit.
(c)(i) Rajah 10.4
Diod P dan R berubah kedudukan./diod Q dan S berubah
kedudukan.
Diod P dan R dipincang songsang
Diagram 10.4
Diode P and R change position/ diode Q and S change
position.
Diode P and R reverse-biased
Rajah 10.5
Kapasitor disambung secara selari dengan output
Perata arus
Diagram 10.5
Capasitor connected parallel to the output
Smoothed the current
(d)
Rintangan termistor berkurang apabila suhu bertambah.
 Resistance of the thermistor decreases when the temperature
increases.
• Mentol digantikan dengan geganti.
The bulb is replaced by relay.
• PPC digantikan dengan termistor dalam kedudukan yang
sama seperti PPC.

LDR is replaced by thermistor in the same position as LDR.

• R2 dikekalkan pada kedudukan yang sama.

R2 remains at the same position.

• Voltan merentasi R3 adalah tinggi, voltan merentasi
termistor adalah rendah.
Voltage across R3 is high, voltage across thermistor is low

10. Doping is a process of adding specific impurities into pure

(a) semiconductor
(i) Pendopan adalah satu process menambahkan bendasing
tertentu ke dalam semiconductor tulen.
(ii)

Semiconductor diode is a combination of semiconductor

type-P and type-N.
Diod semikonduktor adalah kombinasi semikonduktor
jenis-P dan jenis-N
When the diode is forward-bias, the depletion layer is
decrease and the current can flows
Apabila diod adalah pincang depan, lapisan susutan
semakin berkurang dan arus boleh mengalir.
When the diode is reverse bias, the depletion layer is
increases.
Apabila diod adalah pincang songang, lapisan susutan
semakin bertambah
 Current did not flow.
Arus tidak mengalir
((b)

(c) When the semiconductor diode is forward bias, a current

flow and the capacitor is charges.
Apabila diod semikonduktor adalah pincang depan, arus
mengalir dan kapasitor dicas.
When the semiconductor diode is reverse bias, the current
did not flow and the capacitor is discharge.
Apabila diod semikonduktor adalah pincang songsang,
arus tidak mengalir dan kapasitor dinyahcas.
Form 5 Chapter 6

Paper 1 Questions :
1A
2B
3A
4D
5C
6C
7A
8C
9B
10A
11A
12C
13C
14B
15D
16B
17B
18D
19C
20A
21A
22B
23C
24C
25D
26B
27C
28B
29A
30B
31C
32B
33D
34C
35B
36D
37B
38B
39C
40C
41D
42B
43B
44D
45A
46C
47C
48C
49D
50D
51D
52B
53A
54B
55C
56C

Paper 2 Questions :
1
2

4
5a Time for activity of atom of radioactive become half
5bi Right kidney
5b Activity of radioactive not reduced after 20 minutes
ii
5ci 32days
5ci 24days
i
6
7
8
9
 Form 5 Chapter7

Paper 1 Questions :

7.1
1. B
2. D
3. A
4. C
5. A
6. D
7. D
8. D
9. D
10. B
11. A
12. C
13. C
14. C
15. C
16. D
17. B
18. D
19.
20. D
21. B
22. D

7.2
1. A
2. C
3. C
4. B
5. A
6. A
7. B?

7.3
1. A
2. A
3. D
4. B
5. B
6. C
7. C
8. A
9. A
10. D
11. D
12. A
13. D
14. B
15. C
16. D

Paper 2 Questions :

1a A phenomenon when electrons are emitted from a metal surface when the metal
surface is illuminated by a beam of light.
Fenomena pengeluaran elektron dari permukaan logam apabila ianya disinari alur
cahaya pada frekuensi tertentu.
1b The frequency of photon of light must exceeds the threshold frequency //
Wavelength of photon of light must smaller than the threshold wavelength // Photon
energy exceeds th work function
Frekuensi sinar gelombang /foton melebihi daripadafrekuensi ambang logam
//Panjang gelombang/ foton lebih kecil daripada panjang gelombang ambang
logam //Tenaga foton melebihi fungsi kerja
1ci E = hf
= 6.63 x 10 (7 x 1014)
-34

= 4.64 x 10 J
-19

1cii K=E–W
E

= 4.64 x 10 – 2.32 x 10
-19 -19

= 2.32 x 10 J
-19

2a Absorbers and radiators / Penyerap dan pemancar

2b Visible light / Cahaya nampak
2ci The intensity of radiation on the left side of the peak does not continue to increase
of wave frequency
Keamatan sinaran pada sebelah kiri puncak tidak selanjar dengan pertambahan
frekuensi gelombang
2cii Energy (of electromagnetic waves) is discrete / quantized / The energy depends on
the frequency of the waves
Tenaga (gelombang electromagnet) adalah diskrit / terkuanta / Tenaga dipengaruhi
oleh frekuensinya

3a Threshold frequency is the minimum frequency required to produce photoelectric

effect on a metal.
Frekuensi ambang ialah frekuensi minimum yang boleh menghasilkan kesan
fotoelektrik.
3bi Frequency of light B is higher than light A
Frekuensi cahaya B lebih tinggi daripada frekuensi cahaya A
3bii Maximum kinetic energy of photoelectron emitted when irradiated with light B is
higher than when irridiated with light A
Tenaga kinetik maksimum fotoelektron yang terpancar apabila disinari dengan
cahaya A lebih tinggi apabila disinari dengan cahaya B.
3biii The higher the frequency, the higher the maximum kinetic energy of photoelectron
emitted.
Frekuensi semakin tinggi, tenaga kinetik maksimum bagi fotoelektron yang
terpancar semakin tinggi.
3ci W=hf 0

(3 x 1.6x10 ) = (6.63x10 ) f
-19 -34
0

f0=

3cii E=W + Kmax

= (3 + 0.6) x (1.6x10 ) -19

=
3d Remain unhanged.
Tidak berubah.
4a Emission/Release of electron from metal surface illuminated by a beam of light at a
certain frequency.
Pancaran/Pembebasan elektron daripada permukaan logam yang disinari cahaya
dengan frekuensi tertentu.
4b No. Kinetic energy of photoelectron only influnced by the frequency of light
illuminated.
Tidak. Tenaga kinetik fotoelektron hanya dipengaruhi oleh frekuensi pancaran
cahaya // Tenaga kinetik fotoelektron tidak dipengaruhi oleh keamatan cahaya
4c

- Kedua-dua paksi dilabel dengan betul

- garis lurus dengan pintasan-x bernilai positif
4di K = hc -W
max

= 6.63 x 104 (3.0 x 10^ )4 x 10^-7 - (2.00 x 1.6 x 10 )

-34 -19

= 1.7725 x 10 J -19

4dii K =½ mv²
max

1.7725 x 10 J = ½ (9.11 x 10 ¹) v²
-19 -3

= 623 805.1 ms / 6.23805 x 10 m s /623 365.04 m s

-1 5 -1 -1

5a Emission/Release of electron from metal surface illuminated by a beam of light at a

certain frequency.
Pancaran/Pembebasan elektron daripada permukaan logam yang disinari cahaya
dengan frekuensi tertentu.
5b 560 x 10 -9

Ek = 6.63 x 10 (3x10^8560 x 10^-9- 5.16 x 10 )

-34 14

Ek= 1.31 x 10 J // Ek = 0.0815 eV

-20
5c Not
Tidak
6a Number of complete oscillations / vibrations is 1s
Bilangan getaran/ayunan lengkap dalam masa 1s
6b Planck’s Constant // Pemalar Planck
6c Js // Nms // J Hz -1
6d Increase // Bertambah
7ai Line spectrum // Spektrum garis
7aii Lines formed a large separation gap between the lines are for colours (wavelength or
specific frequency only).
Garis-garis dengan jurang pemisahan yang besar antaranya untuk warna-warna
(panjang gelombang atau frekuensi tertentu sahaja).
7b The energy emitted by the radiation of line spectrum is discrete (quantum).
Tenaga yang dipancarkan oleh sinaran spektrum garis itu adalah diskrit
(kuantum).
7c Quantum means the quantity of energy that discrete directlyproportional to the
frequency radiated. // E ∝f
Kuantum bermaksud kuantiti tenaga yang diskrit berkadar terus dengan frekuensi
yang dipancarkan. // E ∝ f
7d