0% found this document useful (0 votes)
372 views3 pages

P N Junction Diode

This experiment aims to draw the I-V characteristics curve of a PN junction diode in forward and reverse bias. The apparatus required includes a PN junction diode, power supplies, ammeters, voltmeters, and other circuit components. In forward bias, current increases slowly at first and then more rapidly after the knee voltage. In reverse bias, a small leakage current occurs and breakdown occurs at a high reverse voltage. The procedure involves connecting the circuit according to diagrams and recording voltage and current readings to plot the I-V curve. Sources of error and precautions are also discussed.

Uploaded by

Rohan Mohanty
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
0% found this document useful (0 votes)
372 views3 pages

P N Junction Diode

This experiment aims to draw the I-V characteristics curve of a PN junction diode in forward and reverse bias. The apparatus required includes a PN junction diode, power supplies, ammeters, voltmeters, and other circuit components. In forward bias, current increases slowly at first and then more rapidly after the knee voltage. In reverse bias, a small leakage current occurs and breakdown occurs at a high reverse voltage. The procedure involves connecting the circuit according to diagrams and recording voltage and current readings to plot the I-V curve. Sources of error and precautions are also discussed.

Uploaded by

Rohan Mohanty
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 3

AIM OF THE EXPERIMENT: To draw the I-V characteristics curve for a P.

N junction diode in forward


and reverse bias.

APPARATUS REQUIRED: 1. P.N junction diode


2. Two power supplies of the ranges 0 – 3V and 0 – 30V
3. One mili ammeter of range 0 -10 mA
4. One micro ammeter of range 0 -100 µA
5. Potentiometer arrangement
6. Two voltmeters of corresponding range 0 – 3V and 0 – 30V
7. A geometry Instruments box.
THEORY: Application of D.C potential to an electronic instrument is known as bias.

Forward bias characteristics: - When p-side of a P N junction is connected to the positive terminal of battery
and n-side is connected to the negative terminal of battery, then the junction is said to be forward
bias. Under the influence of increasing voltage, the current first increases slowly and after a particular
potential known as knee voltage, the proportionate increase in current will be larger.

Reverse bias characteristics: - When p-side of a P N junction is connected to the negative terminal of battery
and n-side is connected to the positive terminal of battery, then the junction is said to be reverse bias.
Under the influence of increasing voltage, there is a small leakage current and for a large reverse
potential known as breakdown voltage there is a sudden spurt in current.

The V-I characteristic curve of a P.N junction diode is a plot between voltage on x-axis and current
on Y-axis.

Diagram:
PROCEDURE:

1. The connections were made as per the circuit diagram drawn in the forward bias.
2. The potentiometer was initially set to zero and in this position both the volt meter and
mili ammeter reads zero.
3. The knob of the potentiometer was gradually changed and corresponding readings of the
volt meter and mili ammeter were noted and tabulated.
4. The connections were made as per the circuit diagram of the reverse bias and the same
procedure as the forward bias was repeated.
5. From the readings of the potential and current, V ~ I characteristic curve was drawn.

TABULATION:

(a) For Forward bias voltage and Forward current

No. of Forward-bias voltage Forward-bias current


Observation <in volt> <in mA>
1 0 0
2 0.25 0.2
3 0.5 0.8
4 0.75 1.8
5 1 2.8
6 1.25 4.2
7 1.5 5.8

(b) For Reverse bias voltage and Reverse current

No. of Reverse-bias voltage Reverse -bias current


Observation <in volt> <in µA >
1 0 0
2 2.5 4
3 5 8
4 7.5 16
5 10 24
6 12.5 32
7 15 42
CALCULATION: The dynamic resistance of the P.N junction diode is the ratio between change in potential

to the change in current.


SOURCES OF ERROR:

1. The power supply may be unstable.

PRECAUTION:

1. There should not be any loose connections.


2. The applied potential should not exceed the specified range.
3. Proper terminal of P.N junction diode, voltmeter and ammeter should be connected in each bias.

INFERENCE: Within the limits of experimental error, the V ~ I characteristics of the given P.N junction
diode were studied and plotted.

You might also like

pFad - Phonifier reborn

Pfad - The Proxy pFad of © 2024 Garber Painting. All rights reserved.

Note: This service is not intended for secure transactions such as banking, social media, email, or purchasing. Use at your own risk. We assume no liability whatsoever for broken pages.


Alternative Proxies:

Alternative Proxy

pFad Proxy

pFad v3 Proxy

pFad v4 Proxy