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IP3005
Ultra High Precision Built-in MOSFET Single Cell Li-
Ion Battery Protection ICs
• Small with Heat Sink eSOP8L Package
1 characterization
2 appliance
• Single Cell Li-Ion/Li-Polymer Battery
Protection ICs • Single-cell rechargeable lithium-ion/lithium-
• Built-in ultra-low on-resistance MOSFETs polymer battery equipment
⯎ Ron=25mΩ,(VDD=3.6V,ILOAD =1A) • Mobile Power, Tablet PC
• Ultra-high precision voltage detection
protection 3 brief introduction
⯎ Overcharge Voltage VCU : 4V ~ 4.575V,
(25mV step) Accuracy ±50mV The IP3005 series ICs are ultra-high
⯎ Overcharge recovery voltage VCL : 3.85V precision single-cell Li-ion/Li-polymer battery
~ 4.4V,(50mV) protection ICs with built-in power MOSFETs
(step by step) and fully integrated ultra-high precision
Accuracy: ±100mV protection circuits for over-charging voltage,
⯎ Overdischarge Voltage VDL : 2.3V ~ 3V, over-discharging voltage, over-discharging current,
(100mV step) Accuracy ±100mV and over-charging current detection.
⯎ Over-discharge recovery voltage VDR :
The IP3005 utilizes an accurate voltage
2.4V ~ 3.1V,(100mV)
(step by step) determination circuit that allows the detection
Accuracy: ±100mV of overcharge voltage, overcharge recovery
• Ultra-high precision current detection voltage, overdischarge voltage, and
protection overdischarge recovery voltage with an
⯎ Discharge current protection: 4A~10A, accuracy of ±50 mV. By monitoring the
(250mA step by step) accuracy ±15% current of the built-in power MOSFETs, the
⯎ Charging current protection: 2A~8A, thresholds for charging overcurrent and
(250mA step by step) accuracy ±15% discharging overcurrent reach a precision of
• 0V-battery charging allowed ±5% and do not change with the change of
• Ultra-low power consumption:
battery voltage.
⯎ Operating mode: 3.0µA
The IP3005 series ICs have a wide range
⯎ Shutdown mode: 1.5µA
of voltage protection and overcurrent
• Multi-protection, high reliability
detection options, with fine gear stepping for
⯎ Load short circuit protection
diversified customization according to user
⯎ ESD 4KV
requirements.
The IP3005 series ICs are packaged in an
eSOP8L package with a small heat sink, and
the extremely low on-resistance of the built-
in power MOSFETs provides excellent heat
dissipation under high power operation.
 IP3005
5 4
GND VM
R1
P+ 100 6 3
Ω VDD VM
C1 IP3005
4.7µF 7 2
GND VM
Battery
8 1
GND NC
EPAD

C2
P-
2.2µF

F i g u r e 1 Simplified Application Schematic

 IP3005
4 Pin Definitions

1 8
NC GND

2 7
VM GND
Power
3 PAD 6
VM
VDD
4 5
VM
GND

eSOP8

Figure 2 IP3005 Pinout

pinout descriptive
serial number name (of a
thing)
1 NC NC pin, requires overhang
2,3,4 VM The negative terminal of the charger
or load, inside the chip with the
Power MOSFET connection.
5,7,8 GND Ground, connected to the negative
terminal of the battery, isconnected
to the power MOSFET inside the
chip.(All GNDs are
You have to catch it. You can't float
it.)
6 VDD Power supply, connect to positive
battery terminal
Power PAD EPAD, current path, needs to be
connected to GND
 IP3005
Product Model List
Main characteristics
Ove MOS 0V
over over overdi Ove Max Batt
rch Ove internal
model cha disc schar rch imu ery seal
arge rcur resistan appliance
rge har ge arge m char
numbe reco rent
inside
volt ge recov ce ging
very volt cont
r age volt ery A mΩ
volt age inu
VCU age voltag
age acc ous
/V VDL e
VCL
/V ura curr
VDR
/V
/V cy ent
mv A

3 27 Yes 1A Mobile Power,

IP3001A 4.28 4.1 2.5 3.0 3.6 50 SOT23-5
Blue
mouthpiece
3 27 Yes 1A Mobile Power,
IP3001B 4.42 4.2 2.5 3.0 3.6 50 SOT23-5
Blue
mouthpiece
IP3003A 4.28 4.1 2.5 3.0 1.5 50 1 30 Yes wearable DFN6
IP3003B 4.42 4.2 2.5 3.0 1.5 50 1 30 Yes wearable DFN6
IP3005A 4.28 4.1 2.5 3.0 7 50 5 25 Yes 2A Mobile Power ESOP8
IP3005B 4.42 4.2 2.5 3.0 7 50 5 25 Yes 2A Mobile Power ESOP8
IP3006A 4.28 4.1 2.5 3.0 7 50 5 27 Yes 2A Mobile Power DFN6
IP3006B 4.42 4.2 2.5 3.0 7 50 5 27 Yes 2A Mobile Power DFN6

Minimum package: 2.5K/roll

 IP3005
5 limit parameter
parameters notation (be) worth unit (of
measure)
VDD Input Voltage VDD -0.3 ~ 10 V
VM Input Voltage Vm -3 ~ 7 V
Junction temperature range TJ -40 ~ 150 ℃
Storage temperature range Tstg -60 ~ 150 ℃
Thermal resistance (junction θJA 50 ℃/W
temperature to ambient)
Human Body Model (HBM) ESD 4 KV

* Stresses above the values listed in the Absolute Maximum Ratings section have the potential to cause
permanent damage to the device under any Absolute Maximum Ratings condition.

Any prolonged exposure may affect the reliability and lifetime of the device.

6 Electrical Characteristics
TA = 25°C unless otherwise specified
parameters notatio test condition minimum value typical maximum unit
n value values (of
measu
re)
Voltage Detection
overcharge voltage
VCU VCU
VCU = 4V to 4.575V. VCU -0.05 VCU +0.05 V
25mv step
Overcharge recovery
voltage VCL
VCL -0.1 VCL
VCL +0.1 V
VCL = 3.85V~4.4V.
50mv step
overdischarge voltage
VDL VDL
VDL = 2.3V~3V. VDL -0.1 VDL +0.1 V
100mv step
overdischarge recovery
voltage VDR
VDR -0.1 VDR
VDR +0.1 V
VDR = 2.4V~3.1V.
100mv step
Charge detection VCHA 0 -0.12 -0.2 V

voltage
Overcharge voltage tCU 240 320 400 ms

protection delay time

Over-discharge voltage tDL 40 80 120 ms

protection delay time

 IP3005
250mA step

short-circuit current ISC 13 17 A

Discharge overcurrent tIOV 5 10 15 ms

protection delay time

Charge overcurrent tIOC 5 10 15 ms

protection delay time

Short circuit protection tSC 200 600 1000 µs

delay time
power wastage

Normal operating IOPE

VDD=3.6V, VM=0V 3.0 3.7 µA

current
Shutdown Current IPDN
VDD=2V, VM=VDD 1.5 1.8 µA

control system

VM pull-up resistor RVMD 320 kΩ

VM pull-down resistor RVMS 30 kΩ

MOSFET On-resistance Ron. VDD = 3.6V, IVM =1A 25 27 mΩ

7 functional architecture diagram

VDD

tem over reference

pera curr
overfill ture ent source
voltage divider Voltage prot disc
circuits ecti har
on ge
over
disc
har
ge
volt logical driv
age
e
control
circ
uit

referen shor
t over
ce circ oscillators curr
ent
uit
source cha
prot
rgin
ecti
g
on
 IP3005
VM GND

GND
Fig. 3 Block diagram of internal functional structure
 IP3005
8 Functional Description

Charging overvoltage

When the battery voltage VDD>VCU and t> tCU , it is a charging over-voltage state.
IP3005 will control the internal charging logic and turn off the internal power MOSFET
to stop the battery charging. The charging overvoltage state will be released when the
following two conditions occur:
（1） When the charger is connected, when the battery voltage drops to the
overcharge recovery voltage VCL , the chip will turn on the internal power
MOSFET, return to normal operation;
（2） When the charger is not connected, the chip turns on the internal power MOSFET
and returns to normal operation when the battery is connected to a load at both
ends and begins to discharge.
The specific implementation is as follows: when the load is connected to both ends
of the battery, the battery starts to discharge, the current is discharged through the
internal parasitic diode of the internal power MOSFET, and at this time, the VM voltage
immediately rises from 0V to about 0.7V (diode conduction voltage), and the chip detects
the VM voltage and releases the overcharge state. When VDD<=VCU , IP3005 will return to
normal state, and vice versa. In addition, if the VM voltage is too small to trigger the
discharge detection when the loads on both ends of the battery start to discharge, the
circuit will not return to normal state.
When VDD>VCU , even if a load is connected to cause an overcurrent discharge, the
overcurrent discharge protection will not be activated until the battery voltage VDD is
reduced to VCU . Due to the internal resistance of the battery itself, the battery voltage will
drop at the moment of connecting the load that causes the overcurrent discharge, and the
overcurrent discharge protection will be triggered if it drops below VCU . If the load is
short-circuited, the battery voltage will instantly drop below VCU and enter the short-
circuit protection state.

Discharge undervoltage

When the battery voltage VDD<VDL and t> tDL , it is a discharge under-voltage state.
IP3005 will control the internal discharge logic and turn off the internal power MOSFET
to stop the battery discharge.
When the internal power MOSFET is turned off, the pull-up resistor RVMD between
VM and GND inside the chip will increase the voltage of VM. When VM>1.5V, IVDD < IPDN ,
the chip enters into shutdown sleep state. In the discharge undervoltage and shutdown
sleep state, VM and VDD are connected through resistor RVMD . When the charger is
turned on and the voltage difference between VM and VDD is >=1.3V, the shutdown
hibernation state will be released, but the internal power MOSFET is still turned off,
and the chip will return to normal operation only when the battery voltage is restored to
>= VDL .
When connecting the charger to a battery in a discharged undervoltage condition, if the VM pin
 IP3005
voltage is not less than the charge detection voltage VCHA
When the battery voltage >= overdischarge recovery voltage VDR , then the discharge undervoltage state is also
released and the chip returns to normal operation.

Discharge overcurrent

During the normal discharge process, if the discharge current exceeds the discharge
overcurrent threshold IIOV and t> tIOV , IP3005 will control the discharge logic, turn off the
internal power MOSFET, stop the discharge and enter the discharge overcurrent state.
In the event of a discharge overcurrent, VM and GND are shorted by the internal resistor RVMS .
When the load is connected, the VM voltage is approximately equal to the VDD voltage. When the
impedance between VM and VDD increases, the VM voltage decreases to the vicinity of GND and
the discharge overcurrent condition is released. When the load is disconnected, since VM and
GND are shorted by the resistor RVMS , the VM voltage drops to GND directly, the overcurrent
discharge state will be released, and the chip will return to normal operation.
 IP3005
Charge overcurrent

When the charging current exceeds the charging overcurrent threshold IIOC and t>tIOC , the
IP3005 will control the charging logic and turn off the internal power MOSFET to stop charging
and enter the charging overcurrent state.
Charge overcurrent detection is only turned on when VM<= VCHA , and the chip judges that it
has entered the charging state. When the battery is over-discharged and under-voltage, if there
is over-charging current flowing into the battery, the power MOSFET can be turned off and
charging can be stopped only when the battery voltage returns to over-discharged voltage VDL or
above.
When disconnecting the charger, the charge overcurrent condition is released when
VM>=VCHA . In addition, the 0V-battery charging function takes precedence over the overcharge
current detection, and the charge overcurrent protection does not work when the battery voltage
is very low.

0V-Battery charging

When the battery voltage is put to 0V due to self-discharge, it is still able to charge. If a charger with 0V
charging function is connected to theP+ and P- terminals,theinternal logic of IP3005 controls the gate of
charging MOSFET to be equal to VDD, when the gate source voltage of MOSFET is greater than or equal
to the turn-on voltage of charger voltage, the charging MOSFET will turn on and start charging. At
the same time, the discharge MOSFET turns off, the charging current passes through the internal
parasitic diode to charge, and the chip enters into normal operation when the battery voltage is
greater than the over-discharge recovery voltage V .DR
 IP3005
9 functional timing

Overcharge and overdischarge detection

Figure 4 Overcharge and overdischarge detection

Discharge overcurrent detection

Figure 5 Discharge overcurrent detection

 IP3005
Charge Detection

Fig. 6 Charging detection

Charge overcurrent detection

Figure 7 Charging overcurrent detection

Notes:(1) Normal operatingstate; (2) Charge overvoltagestate;(3) Dischargeundervoltagestate;(4) Discharge overcurrent
state;
 IP3005
10 Typical Application Schematic
As shown in the typical application diagram in Figure 8 below, the thick part of the line is the high-
current path of the chip, so it is necessary to ensure that the line is as short as possible and the alignment is
as wide as possible to meet the power and heat considerations.
5 VM 4
R1 GND
P+ 100 6 3
Ω VDD VM
C1 IP3005
4.7µF 7µF VM 2
GND
Charger Battery
Load 8 1
GND EPAD NC

C2
P- 2.2µF

Figure 8 Typical Application Diagram

Component Parameter Description

（1） C1 and R1 form a power filter to suppress power ripple, C1 needs to be close to the VDD pin to
enhance the filtering effect, it is recommended to use the
4.7µF.
（2） The resistance value of R1 is not too large, when charging or discharging >1A, the chip
will turn on the internal current monitoring function, as the charging or discharging current
becomes larger, the chip VDD pin current will also become larger accordingly, the resistance
value of R1 is too large to introduce too large a voltage drop, so that the IC's VDD pin voltage than
the battery voltage of the actual voltage is low. Recommended 100Ω.
（3） C2 is used to suppress the spike voltage at the VM port to avoid high VM voltage jitter
caused by instantaneous changes in high current, which may cause damage to the chip. It needs
to be close to the VM pin and 2.2µF is recommended.
 IP3005
11 Package Information

MILLIMETER
SYMBOL
MIN NOM MAX
A -- -- 1.65
A1 0.05 -- 0.15
A 1.30 1.40 1.50
A3 0.60 0.65 0.70
b 0.39 -- 0.48
b1 0.38 0.41 0.43
c 0.21 -- 0.25
c1 0.19 0.20 0.21
D 4.70 4.90 5.10
E 5.80 6.00 6.20
E1 3.70 3.90 4.10
e 1.27BSC
h 0.25 -- 0.50
L 0.50 0.60 0.80
L1 1.05BSC
θ 0 -- 8º
D1 -- 2.09 --
E2 -- 2.09 --