Optical Source 5
Optical Source 5
Attribute Result
I ( z , t ) I ( z ) e j ( t z )
For laser structure with strong carrier confinement, the threshold current
Density for stimulated emission can be well approximated by:
g th J th
: constant depends on specific device constructi on
Semiconductor laser rate equations
• Rate equations relate the optical output power, or # of photons per unit
volume,
, to the diode drive current or # of injected electrons per unit
volume, n. For active (carrier confinement) region of depth d, the rate
equations are:
d
Cn R sp
dt ph
Photon rate stimulated emission spontaneou s emission photon loss
dn J n
Cn
dt qd sp
electron rate injection spontaneou s recombinat ion stimulated emission
C : Coefficient expressing the intensity of the optical emission & absorption process
Rsp : rate of spontaneous emission into the lasing mode
ph : photon life time
J : Injection current density
Threshold current Density & excess electron density
1
from eq. [4 - 25] Cn / ph 0n nth
C ph
J th nth nth
0 J th qd
qd sp sp
Laser operation beyond the threshold
J J th
• The solution of the rate equations [4-25] gives the steady state photon
density, resulting from stimulated emission and spontaneous emission
as follows:
ph
s ( J J th ) ph Rsp
qd