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Beee Ela Project - 2

This document describes an experiment to characterize the V-I behavior of a PN junction diode. Students are asked to: 1) Construct a circuit to supply varying voltages to a diode and measure the corresponding currents. 2) Record voltage and current values in a table to plot the forward bias characteristics and determine the cut-in voltage and dynamic resistance. 3) Similarly, plot the reverse bias characteristics up to the breakdown voltage and calculate the reverse resistance. The objectives are to observe and analyze the diode's electrical behavior under both forward and reverse bias conditions. Proper documentation of measurements and calculations is required to understand the diode's operational parameters.

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Aditya Gorrepati
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48 views8 pages

Beee Ela Project - 2

This document describes an experiment to characterize the V-I behavior of a PN junction diode. Students are asked to: 1) Construct a circuit to supply varying voltages to a diode and measure the corresponding currents. 2) Record voltage and current values in a table to plot the forward bias characteristics and determine the cut-in voltage and dynamic resistance. 3) Similarly, plot the reverse bias characteristics up to the breakdown voltage and calculate the reverse resistance. The objectives are to observe and analyze the diode's electrical behavior under both forward and reverse bias conditions. Proper documentation of measurements and calculations is required to understand the diode's operational parameters.

Uploaded by

Aditya Gorrepati
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as DOCX, PDF, TXT or read online on Scribd
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VALLURIPALLI NAGESWARARAO VIGNANA JYOTHI

INSTITUTE OF ENGINEERING AND TECHNOLOGY


(AUTONOMOUS INSTITUTE)
NAAC ACCREDITED WITH ‘A++ GRADE
Vignana Jyothi Nagar, Bachupally, Nizampet (s.o), Hyderabad 500090
Tele Phone no: 040-23042758/59/60, Fax: 040-23042761
Email:postbox@vnrvjiet.ac.in Website: www.vnrvjiet.ac.in

____________________________________________________________________

Why am I Teaching What I am Teaching? And Why am I Learning What I am Learning?

WIL REPORT
B.TECH.I-YEAR I-SEMESTER - IT-B
Course name: BASIC ELECTRICAL AND ELECTRONICS ENGINEERING
Course code: 22ES1EE101

ROLL NO. NAME


23081A1287 GORREPATI SAI ADITYA
23071A1288 GOUNDLA BHAVANI GOUD
23071A1289 GUDIPATI SAI SHRESHTA
23071A1290 GURRAM SRIVALLI
23071A1291 JADI RAKESH
23071A1292 JULURI SURESH SHRADHA

UNIT V:
Semi-Conductor Devices and Data Acquisition: P-N junction
diode, symbol, V-I Characteristics, Diode Applications: Half wave,
Full wave rectifiers. Bipolar Junction
Transistor construction (NPN and PNP transistors), Common-
Emitter configuration,
Transistor as an amplifier. A/D and D/A converters, Data
Acquisition and Control.
V - I CHARACTERISTICS OF PN-JUNCTION DIODE

AIM:

1. To plot the V I characteristics of a Semiconductor PN Junction diode.


2. To find the following parameters from the Forward characteristics.
a) Cut in voltage-V
b) Dynamic forward resistance- rf

APPARATUS:

S. No Equipment Qty Range


1. Regulated DC Power Supply 1 0-30V
2. Diode 1 Si IN4148
3. Resistor 1 each 180Ω/5W & 10KΩ
4. Voltmeter 2 0-20V
5. Ammeter 1 each 0-200mA,0-
6. Bread Board 1
7. Single Stand Wires Adequate

THEORY: (Forward & Reverse)


Under forward bias configuration the positive terminal of the battery is connected to P-
side and negative terminal of the battery is connected to N-side as shown in the figure above
large amount of the current flows through the junction under this condition. When P-N
junction is forward biased, the holes are repelled from the positive electrode and the
electrons from the negative electrode of the power supply and are forced to move towards
the junction. Some of the holes and electrons in the depletion region recombine themselves.
This reduces the width of the depletion layer and the height of the potential barrier. As a
result of this greater number of majority charge carriers flow through the P-N junction.
In the reverse bias positive electrode of the battery is connected to N-side and the
negative electrode to P-side. When a P-N junction is reverse biased, the holes in the P
region are attracted towards the negative of the battery and the electrons in the N region
are attracted towards the positive electrode.
CIRCUIT DIAGRAM:

OBSERVATIONS :
S.NO Vs (V) Vf(Volts) If (mA)

Forward 1 0.1 0.1 0 characteristics


2 0.2 0.2 0
Table – 1

3 0.3 0.3 0

4 0.4 0.39 0

5 0.5 0.47 0.11

6 0.6 0.51 0.47

7 0.7 0.92 0.53

8 0.8 1.42 0.54

9 0.9 1.94 0.55

10 1.0 2.46 0.55

11 1.1 2.98 0.56

12
1.2 3.52 0.56
13
1.3 4.05 0.57
14
1.4 4.59 0.57
15
1.5 5.13 0.57
16
1.6 5.67 0.57
17
1.7 6.21 0.58
18
1.8 6.76 0.58
19
1.9 7.30 0.58
20
2.0 7.85 0.58
Thus, the majority carriers are drawn away from the junction. This widens the depletion
layer and increases the height of the potential barrier. Hence there is no current flow due to
majority carriers under reverse bias. A small amount of current due to diffusion of minority
charge carriers across the junction flows through the reversed biased PN junction.
Generation of the minority carriers is dependent upon the ambient temperature and is
independent of the applied reverse voltage, as can be seen from the

PROCEDURE:

I. Forward Characteristics:-
1. Keep the D.C Power supply voltage control knob in the minimum
position and current control knob in the maximum position.
2. Connect the circuit as shown in Fig 1.
3. Vary the power supply voltage in steps of 0.1 volts. Note down Vf and If in the table.
4. Draw the Vf - If characteristics and find out the cut - in voltage V
for the diode. Ensure that the current through the diode does not
exceed rated current.

5. Present the results at the end of the experiment.


6. Estimate the forward resistance of the diode from the relation,
RF = [ ΔVf/ΔIf].

MODEL GRAPHS:-

II. Reverse characteristics:-

1. Connect the circuit as shown in Fig-2.


2. Vary the voltage across the diode up to its rated reverse break over voltage in
steps of any arbitrary voltage values and record the current corresponds to
the reverse break over voltage.
3. Draw the reverse characteristics Vr - Ir.
4. Estimate the reverse resistance Rr from the characteristic curve from the relation
R = [ ΔVr/ΔIr]
5. Present the results at the end of the experiment.

RESULT :

Hence, obtained V-I Characteristics of PN-Junction Diode.

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