Silicon Controlled Rectifier

We know that the diode allows electric current in one direction and blocks electric current in
another direction. This unique behavior of the diodes makes it possible to build different types of
rectifiers such as half wave, full wave and bridge rectifiers. These rectifiers converts the
Alternating Current into Direct Current.

These rectifiers uses normal p-n junction diodes (two layer diodes). So if the voltage applied to
these diodes is high enough, then the diodes may get destroyed. So the rectifiers cannot operate
at high voltages. To overcome these drawback, scientists have developed a special type of
rectifier known as Silicon Controlled Rectifier. These rectifiers can withstand at high voltages.

The principle of p-n-p-n switching was developed by Tanenbaum, Goldey, Moll and Holonyak
of Bell Laboratories in 1956. The silicon controlled rectifier was developed by a team of power
engineers led by Gordon Hall and commercialized by Frank W. Frank W. "Bill" Gutzwiller in
1957. In the early days of this device development, it is often referred by names like SCR and
controlled rectifier. However, now-a-days, this device is often referred by Thyristor.
Silicon controlled rectifiers are used in power control applications such as power delivered to
electric motors, relay controls or induction heating elements where the power delivered has to be
controlled.

Definition
A Silicon Controlled Rectifier is a 3 terminal and 4 layer semiconductor current controlling
device or Thyristor. It is made up of a silicon material which controls high power and converts
high AC current into DC current (rectification). Hence, it is named as silicon controlled rectifier.
It has three P-N junctions namely J1, J2, J3 with three terminals attached to the semiconductors
materials namely anode (A), cathode (K), and gate (G).
The schematic symbol of a silicon controlled rectifier is shown in the below figure. A SCR diode
consists of three terminals namely anode (A), cathode (K), Gate (G). The diode arrow represents
the direction of conventional current

Modes of Operation in SCR

There are three modes of operation for a Silicon Controlled Rectifier (SCR), depending upon the
biasing given to it.

1) Forward Blocking Mode (Off State)

2) Forward Conducting Mode (On State)

3) Reverse Blocking Mode (Off State)

1) Forward Blocking Mode (Off State)

In this mode of operation, the positive voltage (+) is given to anode A (+), negative voltage (-) is
given to cathode K (-), and gate G is open circuited as shown in the below figure. In this case,
the junction J1 and junction J3 are forward biased whereas the junction J2 becomes reverse
biased. Due to the reverse bias voltage, the width of depletion region increases at junction J 2.
This depletion region at junction J2 acts as a wall or obstacle between the junction J 1 and junction
J3. It blocks the current flowing between junction J1 and junction J3. Therefore, the majority of
the current does not flow between junction J1 and junction J3. However, a small amount of
leakage current flows between junction J1 and junction J3.
When the voltage applied to the SCR reaches a breakdown value, the high energy minority
carriers causes avalanche breakdown. At this breakdown voltage, current starts flowing through
the SCR. But below this breakdown voltage, the SCR offers very high resistance to the current
and so it will be in off state.

In this mode of operation, SCR is forward biased but still current does flows through it. Hence, it
is named as Forward Blocking Mode.

2) Forward Conducting Mode (On State)

The Silicon Controlled Rectifier can be made to conduct in two ways:

i. By increasing the forward bias voltage applied between anode and cathode beyond the
breakdown voltage
ii. By applying positive voltage at gate terminal.

In the first case, the forward bias voltage applied between anode and cathode is increased beyond
the breakdown voltage, the minority carriers (free electrons in anode and holes in cathode) gains
large amount of energy and accelerated to greater velocities. This high speed minority carriers
collides with other atoms and generates more charge carriers. Likewise, many collisions happens
with other atoms. Due to this, millions of charge carriers are generated. As a result depletion
region breakdown occurs at junction J2 and current starts flowing through the SCR. So the SCR
will be in On state. The current flow in the SCR increases rapidly after junction breakdown
occurs.

In the second case, a small positive voltage V G is applied to the gate terminal. As we know that,
in forward blocking mode, current does not flows through the circuit because of the wide
depletion region present at the junction J2. This depletion region was formed because of the
reverse biased gate terminal. So this problem can be easily solved by applying a small positive
voltage at the Gate terminal. When a small positive voltage is applied to the gate terminal, it will
become forward biased. So the depletion region width at junction J 2 becomes very narrow. Under
this condition, applying a small forward bias voltage between anode and cathode is enough for
electric current to penetrate through this narrow depletion region. Therefore, electric current
starts flowing through the SCR circuit.

In second case, we no need to apply large voltage between anode and cathode. A small voltage
between anode and cathode, and positive voltage to gate terminal is enough to brought SCR from
blocking mode to conducting mode.In this mode of operation, SCR is forward biased and current
flows through it. Hence, it is named as Forward Conducting Mode.
3) Reverse Blocking Mode (On State)
In this mode of operation, the negative voltage (-) is given to anode (+), positive voltage (+) is
given to cathode (-), and gate is open circuited as shown in the below figure. In this case, the
junction J1 and junction J3 are reverse biased whereas the junction J2 becomes forward biased.

As the junctions J1 and junction J3 are reverse biased, no current flows through the SCR circuit.
But a small leakage current flows due to drift of charge carriers in the forward biased junction
J2. This small leakage current is not enough to turn on the SCR. So the SCR will be in Off state.

V-I Characteristics of SCR

The V-I characteristics of SCR is shown in the below figure. The horizontal line in the below
figure represents the amount of voltage applied across the SCR whereas the vertical line
represents the amount of current flows in the SCR.
VA = Anode voltage, IA = Anode current, +VA = Forward anode voltage, +IA = Forward anode
current, -VA = Reverse anode voltage, +IA = Reverse anode current.

The V-I characteristics of SCR is divided into three regions:

❖ Forward blocking region

❖ Forward conduction region
 ❖ Reverse blocking region
❖ Forward blocking region

In this region, the positive voltage (+) is given to anode (+), negative voltage (-) is given to
cathode (-), and gate is open circuited. Due to this the junction J 1 and J3 become forward biased
while J2 become reverse biased. Therefore, a small leakage current flows from anode to cathode
terminals of the SCR. This small leakage current is known as forward leakage current.

The region OA of V-I characteristics is known as forward blocking region in which the SCR
does not conduct electric current.
 ❖ Forward Conduction region

If the forward bias voltage applied between anode and cathode is increased beyond the
breakdown voltage, the minority carriers (free electrons in anode and holes in cathode) gains
large amount of energy and accelerated to greater velocities. This high speed minority carriers
collides with other atoms and generates more charge carriers. Likewise, many collisions happens
with atoms. Due to this, millions of charge carriers are generated. As a result depletion region
breakdown occurs at junction J2 and current starts flowing through the SCR. So the SCR will be
in On state. The current flow in the SCR increases rapidly after junction breakdown occurs.
The voltage at which the junction J2 gets broken when the gate is open is called forward
breakdown voltage (VBF).

The region BC of the V-I characteristics is called conduction region. In this region, the current
flowing from anode to cathode increases rapidly. The region AB indicates that as soon as the
device becomes on, the voltage across the SCR drops to some volts.

● Reverse Blocking Region

In this region, the negative voltage (-) is given to anode (+), positive voltage (+) is given to
cathode (-), and gate is open circuited. In this case, the junction J1 and junction J3 are reverse
biased whereas the junction J2 becomes forward biased.

As the junctions J1 and junction J3 are reverse biased, no current flows through the SCR circuit.
But a small leakage current flows due to drift of charge carriers in the forward biased junction
J2. This small leakage current is called reverse leakage current. This small leakage current is not
sufficient to turn on the SCR.

If the reverse bias voltage applied between anode and cathode is increased beyond the reverse
breakdown voltage (VBR), an avalanche breakdown occurs. As a result, the current increases
rapidly. The region EF is called reverse avalanche region. This rapid increase in current may
damage the SCR device.

What is TRIAC?
Thyristors are widely used semiconductor-based devices for the regulation of power. However,
they can conduct in only one direction just like a diode which makes them suitable for DC power
regulation. Whereas, TRIAC which belongs to the family of the thyristor can conduct in both
directions as well as offer full control over the power supplied. Therefore, they are used for AC
power regulation.
TRIAC is an acronym that stands for “Triode for Alternating Current”. Triode means a
three-terminal device while AC means that it is used for switching Alternating current. It is a
three-terminal bi-directional switch that conducts in both directions. It is made from the
combination of two SCRs in anti-parallel with their gates joined together.
The three terminals are Gate, A1 or MT1(Main Terminal 1) and A2 or MT2.

The symbol of TRIAC represents two thyristors (SCR) connected in antiparallel having a
common gate.
Both main terminals (MT1 and MT2) electrodes are connected with both P and N
regions of both SCRs. So that it can conduct current in both directions. The gate
metallic electrode is also connected with both P and N regions. It allows the TRIAC to
be triggered by both positive as well as negative gate currents.

Applications of TRIAC
TRIAC is used for low to medium AC power regulation. Due to their asymmetrical switching, a
DIAC is used in series to its gate terminal to provide symmetrical triggering. A combination of
both DIAC and TRIAC in a single package is available which is known as QUADRAC.

They are used for controlling the speed of motors, fans and light dimmers as well as heat control
applications.

What is DIAC?
DIAC is an acronym that stands for “Diode for Alternating Current”. It is a two-terminal
bidirectional switch that conducts in both directions when the applied voltage exceeds its break
over voltage. It cannot amplify or offer controlled switching.

It belongs to the family of thyristors but It is an uncontrolled switch because it does not have a
control or gate terminal. Its name implies that it is a diode that can conduct AC in both
directions. It is mainly used for triggering other devices such as TRIAC due to its symmetrical
switching characteristics

The symbol of DIAC resembles two diodes in antiparallel . It has two terminals named A1 or
MT1 and A2 or MT2. MT stands for main terminals.

It does not have gate or controlling terminal. Instead, it turns on and off by increasing or

decreasing the terminal voltage above or below its break over voltage.
UJT (Ref. Book: Principle of electronics by V.K Mehta)

● Define UJT

● Draw the schematic and constructional symbol of UJT

● Why UJT is used as relaxation oscillator? Explain.