1N5624, 1N5625, 1N5626, 1N5627

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Standard Avalanche Sinterglass Diode
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Controlled avalanche characteristics
• Low reverse current
• High surge current loading
949588
• Material categorization:
for definitions of compliance please see
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APPLICATIONS
Models
Available • Rectification diode, general purpose

MECHANICAL DATA 
Case: SOD-64 
Terminals: plated axial leads, solderable per  
MIL-STD-750, method 2026 

Polarity: color band denotes cathode end

Mounting position: any 
Weight: approx. 858 mg 

ORDERING INFORMATION (Example)

DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY
1N5627 1N5627-TR 2500 per 10" tape and reel 12 500
1N5627 1N5627-TAP 2500 per ammopack 12 500

PARTS TABLE
PART TYPE DIFFERENTIATION PACKAGE
1N5624 VR = 200 V; IF(AV) = 3 A SOD-64
1N5625 VR = 400 V; IF(AV) = 3 A SOD-64
1N5626 VR = 600 V; IF(AV) = 3 A SOD-64
1N5627 VR = 800 V; IF(AV) = 3 A SOD-64

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
1N5624 VR = VRRM 200 V
Reverse voltage = repetitive peak reverse 1N5625 VR = VRRM 400 V
See electrical characteristics
voltage 1N5626 VR = VRRM 600 V
1N5627 VR = VRRM 800 V
Peak forward surge current tp = 10 ms, half sine wave IFSM 100 A
Repetitive peak forward current IFRM 18 A
Average forward current IF(AV) 3 A
tp = 20 μs, half sine wave,
Pulse avalanche peak power PR 1000 W
Tj = 175 °C
Pulse energy in avalanche mode, non repetitive
I(BR)R = 1 A, Tj = 175 °C ER 20 mJ
(inductive load switch off)
i2*t-rating i2*t 40 A2*s
Junction and storage temperature range Tj = Tstg -55 to +175 °C

Rev. 1.6, 22-Feb-18 1 Document Number: 86063

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 1N5624, 1N5625, 1N5626, 1N5627
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Vishay Semiconductors

MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT
l = 10 mm, TL = constant RthJA 25 K/W
Junction ambient
On PC board with spacing 25 mm RthJA 70 K/W

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 3 A VF - - 1 V
VR = VRRM IR - 0.1 1 μA
Reverse current
VR = VRRM, Tj = 100 °C IR - 5 10 μA
IR = 100 A, tp/T = 0.01,
Breakdown voltage V(BR) - - 1600 V
tp = 0.3 ms
Diode capacitance VR = 4 V, f = 1 MHz CD - 40 60 pF
IF = 0.5 A, IR = 1 A, iR = 0.25 A trr - 3.5 5 μs
Reverse recovery time
IF = 1 A, dI/dt = 5 A/μs, VR = 50 V trr - 4.5 7.5 μs
Reverse recovery charge IF = 1 A, dI/dt = 5 A/μs Qrr - 8 12 C

TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)

40 3.5
VR = VRRM
3.0
IFAV - Average Forward Current (A)

half sinewave
RthJA = 25 K/W
30
Junction/Ambient (K/W)
RthJA - Therm. Resist.

2.5 l = 10 mm

2.0
20
l l 1.5

1.0
10
RthJA = 70 K/W
0.5
PCB: d = 25 mm
TL = constant
0 0.0
0 5 10 15 20 25 30 0 20 40 60 80 100 120 140 160 180
94 9563 I - Lead Length (mm) 16393 Tamb - Ambient Temperature (°C)

Fig. 1 - Max. Thermal Resistance vs. Lead Length Fig. 3 - Max. Average Forward Current vs. Ambient Temperature

100.000 1000
V R = V RRM
10.000
I R – R everse Current ( A )
– Forward Current ( A )

100
1.000 T j =175°C

0.100
T j =25°C 10
F

0.010
I

0.001 1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 25 50 75 100 125 150 175
16392 V F – Forward Voltage ( V ) 16394 T j – Junction Temperature ( °C )
Fig. 2 - Forward Current vs. Forward Voltage Fig. 4 - Reverse Current vs. Junction Temperature

Rev. 1.6, 22-Feb-18 2 Document Number: 86063

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 1N5624, 1N5625, 1N5626, 1N5627
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Vishay Semiconductors

300 100
PR – R everse Power Dissipation ( mW )

V R = V RRM 90 f=1MHz
250

CD – Diode Capacitance ( pF )
80

200 70
PR –L imit
60
@ 100%V R
150 50
40
100 PR –L imit
30
@ 80%V R
50 20
10
0 0
25 50 75 100 125 150 175 0.1 1.0 10.0 100.0
16395 T j – Junction Temperature ( °C ) 16396 V R – R everse Voltage ( V )

Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 6 - Diode Capacitance vs. Reverse Voltage

PACKAGE DIMENSIONS in millimeters (inches): SOD-64

Sintered Glass Case Cathode Identification 4.3 (0.168) max.

SOD-64

1.35 (0.053) max.

26(1.014) min. 4 (0.156) max. 26 (1.014) min.

Document-No.: 6.563-5006.4-4
Rev. 3 - Date: 09.February.2005
94 9587

Rev. 1.6, 22-Feb-18 3 Document Number: 86063

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2019 1 Document Number: 91000