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Wzs bcr142

This document provides specifications for the NPN Silicon Digital Transistor BCR142 and BCR142W. It includes maximum ratings, thermal resistance, electrical characteristics, and graphs of various parameters like current gain and saturation voltage as functions of collector current and junction temperature. The transistors can handle a total power dissipation of up to 200mW for the BCR142 and 250mW for the BCR142W, both with junction temperatures below specified limits.

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0% found this document useful (0 votes)
55 views8 pages

Wzs bcr142

This document provides specifications for the NPN Silicon Digital Transistor BCR142 and BCR142W. It includes maximum ratings, thermal resistance, electrical characteristics, and graphs of various parameters like current gain and saturation voltage as functions of collector current and junction temperature. The transistors can handle a total power dissipation of up to 200mW for the BCR142 and 250mW for the BCR142W, both with junction temperatures below specified limits.

Uploaded by

Haji Rashid
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 8

BCR142...

NPN Silicon Digital Transistor


• Switching circuit, inverter, interface circuit,
driver circuit
• Built in bias resistor (R1=22kΩ, R2=47kΩ)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101

BCR142
BCR142W
C

R1

R2

1 2

B E
EHA07184

Type Marking Pin Configuration Package


BCR142 WZs 1=B 2=E 3=C - - - SOT23
BCR142W WZs 1=B 2=E 3=C - - - SOT323

Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 50 V
Collector-base voltage VCBO 50
Input forward voltage Vi(fwd) 60
Input reverse voltage Vi(rev) 10
Collector current IC 100 mA
Total power dissipation- Ptot mW
BCR142, TS ≤ 102°C 200
BCR142W, TS ≤ 124°C 250
Junction temperature Tj 150 °C
Storage temperature Tstg -65 ... 150

1 2011-08-29
BCR142...

Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS K/W
BCR142 ≤ 240
BCR142W ≤ 105
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage V(BR)CEO 50 - - V
IC = 100 µA, IB = 0
Collector-base breakdown voltage V(BR)CBO 50 - -
IC = 10 µA, IE = 0
Collector-base cutoff current ICBO - - 100 nA
VCB = 40 V, IE = 0
Emitter-base cutoff current IEBO - - 227 µA
VEB = 10 V, IC = 0
DC current gain-2) hFE 70 - - -
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage2) VCEsat - - 0.3 V
IC = 10 mA, IB = 0.5 mA
Input off voltage Vi(off) 0.5 - 1.2
IC = 100 µA, VCE = 5 V
Input on voltage Vi(on) 0.8 - 2.5
IC = 2 mA, VCE = 0.3 V
Input resistor R1 15 22 29 kΩ
Resistor ratio R1/R2 0.42 0.47 0.52 -
AC Characteristics
Transition frequency fT - 150 - MHz
IC = 10 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance Ccb - 3 - pF
VCB = 10 V, f = 1 MHz
1For calculation of R
thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2Pulse test: t < 300µs; D < 2%

2 2011-08-29
BCR142...

DC current gain hFE = ƒ(IC) Collector-emitter saturation voltage


VCE = 5V (common emitter configuration) VCEsat = ƒ(IC ), IC/IB = 20

10 3 0.5

0.4

VCEsat
0.35
10 2
hFE

0.3

-40 °C
0.25 -25 °C
25 °C
0.2 85 °C
10 1
-40 °C 125 °C
-25 °C 0.15
25 °C
85 °C 0.1
125 °C
0.05

10 0 -4 -3 -2 -1 0 -3 -2 -1
10 10 10 A 10 10 10 A 10
IC IC

Input on Voltage Vi (on) = ƒ(IC) Input off voltage Vi(off) = ƒ(IC)


VCE = 0.3V (common emitter configuration) VCE = 5V (common emitter configuration)

10 2 10 1

V
-40 °C
V -25 °C
25 °C
-40 °C 85 °C
10 1
Vi(on)

Vi(off)

-25 °C 125 °C
25 °C
85 °C
125 °C 10 0

10 0

10 -1 -5 -4 -3 -2 -1
10 -1 -5 -4 -3 -2 -1
10 10 10 10 A 10 10 10 10 10 A 10
IC IC

3 2011-08-29
BCR142...

Total power dissipation P tot = ƒ(TS) Total power dissipation P tot = ƒ(TS)
BCR142 BCR142W

300 300
mW mW

250 250

225 225

200 200
Ptot

Ptot
175 175

150 150

125 125

100 100

75 75

50 50

25 25

0 0
0 15 30 45 60 75 90 105 120 °C 150 0 15 30 45 60 75 90 105 120 °C 150
TS TS

Permissible Pulse Load RthJS = ƒ(tp) Permissible Pulse Load


BCR142 Ptotmax/PtotDC = ƒ(tp )
BCR142
10 3 10 3

K/W
-
Ptotmax / PtotDC

10 2
D=0
RthJS

10 2 0.005
0.01
0.02
10 1
0.05
0.5 0.1
0.2 0.2
0.1 0.5
0.05 10 1
0.02
10 0
0.01
0.005
D=0

10 -1 -6 -5 -4 -3 -2 0
10 0 -6 -5 -4 -3 -2 0
10 10 10 10 10 s 10 10 10 10 10 10 s 10
tp tp

4 2011-08-29
BCR142...

Permissible Puls Load RthJS = ƒ (t p) Permissible Pulse Load


BCR142W Ptotmax/PtotDC = ƒ(tp )
BCR142W
10 3 10 3

K/W
-

Ptotmax / PtotDC
10 2
D=0
RthJS

10 2 0.005
0.01
0.02
10 1
0.05
0.5 0.1
0.2 0.2
0.1 0.5
0.05 10 1
0.02
10 0
0.01
0.005
D=0

10 -1 -6 -5 -4 -3 -2 0
10 0 -6 -5 -4 -3 -2 0
10 10 10 10 10 s 10 10 10 10 10 10 s 10
tp tp

5 2011-08-29
Package SOT23 BCR142...

Package Outline

0.15 MIN.
1 ±0.1
2.9 ±0.1 0.1 MAX.
B
3

2.4 ±0.15

1.3 ±0.1
10˚ MAX.

10˚ MAX.
1 2
1)
0.4 +0.1
-0.05 0.08...0.1 A
C 5
0.95
0...8˚
1.9

0.25 M B C 0.2 M A

1) Lead width can be 0.6 max. in dambar area


Foot Print

0.8
0.9
1.3
0.9

0.8 1.2

Marking Layout (Example)

Manufacturer

EH s 2005, June
Date code (YM)

Pin 1 BCW66
Type code

Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel

4
0.9 0.2
2.13
2.65
8

Pin 1 3.15 1.15

6 2011-08-29
Package SOT323 BCR142...

Package Outline
2 ±0.2 0.9 ±0.1
0.1 MAX.
0.3 +0.1
-0.05
3x
0.1 M 0.1
A
3

1.25 ±0.1
2.1 ±0.1

0.1 MIN.
1 2
0.65 0.65 0.15 +0.1
-0.05

0.2 M A

Foot Print

0.6
1.6
0.8

0.65
0.65

Marking Layout (Example)

Manufacturer

2005, June
Date code (YM)

Pin 1 BCR108W
Type code

Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel

4 0.2
8
2.3

Pin 1 2.15 1.1

7 2011-08-29
BCR142...

Edition 2009-11-16

Published by
Infineon Technologies AG
81726 Munich, Germany

 2009 Infineon Technologies AG


All Rights Reserved.

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee


of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).

Warnings

Due to technical requirements, components may contain dangerous substances.


For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.

8 2011-08-29

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