FKD3004

FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs

 Super Low Gate Charge

Product Summary
 100% EAS Guaranteed
 Green Device Available
 Excellent CdV/dt effect decline BVDSS RDSON ID
 Advanced high cell density Trench 30V 8.5mΩ 55A
technology

Description TO252 Pin Configuration

The FKD3004 is the high cell density trenched

N-ch MOSFETs, which provide excellent RDSON
and gate charge for most of the synchronous
buck converter applications.
The FKD3004 meet the RoHS and Green
Product requirement, 100% EAS guaranteed
with full function reliability approved.

Absolute Maximum Ratings

Symbol Parameter Rating Units

VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage ±20 V
1
ID@TC=25℃ Continuous Drain Current, VGS @ 10V 55 A
1
ID@TC=100℃ Continuous Drain Current, VGS @ 10V 40 A
1
ID@TA=25℃ Continuous Drain Current, VGS @ 10V 13.6 A
1
ID@TA=70℃ Continuous Drain Current, VGS @ 10V 11.4 A
2
IDM Pulsed Drain Current 110 A
3
EAS Single Pulse Avalanche Energy 57.8 mJ
IAS Avalanche Current 34 A
4
PD@TC=25℃ Total Power Dissipation 41 W
4
PD@TA=25℃ Total Power Dissipation 2.42 W
TSTG Storage Temperature Range -55 to 175 ℃
TJ Operating Junction Temperature Range -55 to 175 ℃

Thermal Data

Symbol Parameter Typ. Max. Unit

1
RθJA Thermal Resistance Junction-ambient (Steady State) --- 62 ℃/W
1
RθJC Thermal Resistance Junction-Case --- 3.6 ℃/W

Data and specifications subject to change without notice.

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 FKD3004
FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Symbol Parameter Conditions Min. Typ. Max. Unit

BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- --- V
△BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.027 --- V/℃

2 VGS=10V , ID=30A --- 7.5 8.5

RDS(ON) Static Drain-Source On-Resistance m
VGS=4.5V , ID=15A --- 11 14
VGS(th) Gate Threshold Voltage 1.2 1.5 2.5 V
VGS=VDS , ID =250uA
△VGS(th) VGS(th) Temperature Coefficient --- -5.8 --- mV/℃
VDS=24V , VGS=0V , TJ=25℃ --- --- 1
IDSS Drain-Source Leakage Current uA
VDS=24V , VGS=0V , TJ=55℃ --- --- 5
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA
gfs Forward Transconductance VDS=5V , ID=30A --- 38 --- S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.2 3.5 
Qg Total Gate Charge (4.5V) --- 12.6 17.6
Qgs Gate-Source Charge VDS=15V , VGS=4.5V , ID=15A --- 4.2 5.9 nC
Qgd Gate-Drain Charge --- 5.1 7.1
Td(on) Turn-On Delay Time --- 4.6 9.2
Tr Rise Time VDD=15V , VGS=10V , RG=3.3 --- 12.2 22
ns
Td(off) Turn-Off Delay Time ID=15A --- 26.6 53
Tf Fall Time --- 8 16
Ciss Input Capacitance --- 1317 1843
Coss Output Capacitance VDS=15V , VGS=0V , f=1MHz --- 163 228 pF
Crss Reverse Transfer Capacitance --- 131 183

Diode Characteristics

Symbol Parameter Conditions Min. Typ. Max. Unit

1,5
IS Continuous Source Current --- --- 55 A
2,5
VG=VD=0V , Force Current
ISM Pulsed Source Current --- --- 110 A
2
VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V
trr Reverse Recovery Time --- 9.2 --- nS
Qrr Reverse Recovery Charge IF=30A , dI/dt=100A/µs , TJ=25℃ --- 2 --- nC

Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is V DD=25V,VGS=10V,L=0.1mH,IAS=34A
4.The power dissipation is limited by 175℃ junction temperature
5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

Data and specifications subject to change without notice.

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 FKD3004
FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs

Typical Characteristics

100

75
ID Drain Current (A)

VGS=10V
VGS=7V
VGS=5V
50
VGS=4.5V

VGS=3V
25

0
0 0.5 1 1.5 2 2.5 3
VDS , Drain-to-Source Voltage (V)

Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage

12 10
ID =15A

TJ=150℃ TJ=25℃
VGS , Gate to Source Voltage (V)

8
9

6 VDS=15V
IS(A)

6 VDS=24V

0
0 0.3 0.6 0.9 1.2 0
VSD , Source-to-Drain Voltage (V) 0 6 12 18 24 30
QG , Total Gate Charge (nC)

Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics

diode 1.8
1.8
Normalized On Resistance

1.4 1.4
Normalized VGS(th)

1 1.0

0.6 0.6

0.2 0.2
-50 25 100 175 -50 -5 40 85 130 175
TJ ,Junction Temperature (℃ ) TJ , Junction Temperature (℃)

Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ

Data and specifications subject to change without notice.

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 FKD3004
FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs

10000
F=1.0MHz

Ciss
Capacitance (pF)

1000

Coss

100
Crss

10
1 5 9 13 17 21 25
VDS , Drain to Source Voltage (V)

Fig.7 Capacitance Fig.8 Safe Operating Area

1
Normalized Thermal Response (RθJC)

DUTY=0.5

0.3

0.1 0.1
0.05
PDM
0.02 TON
0.01 T
D = TON/T
SINGLE PULSE TJpeak = TC + PDM x RθJC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
1 BVDSS
VDS EAS= L x IAS2 x
2 BVDSS-VDD
90% BVDSS
VDD

IAS
10%
VGS
Td(on) Tr Td(off) Tf

Ton Toff VGS

Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform

FFARMwaveform
Data and specifications subject to change without notice.

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