ED Lab Experiment Manual 6

American International University- Bangladesh

Faculty of Engineering (FE)
Department of Electrical and Electronic Engineering (EEE)
EEE 2104: Electronic Devices Lab
Title of the Experiment: Study of BJT Biasing Circuit – Fixed Bias and Self-Bias Circuits.

Objectives:
The objectives of this experiment are to
1. Establish the proper DC operating point of a bipolar transistor.
2. Study the stability of the operating point with respect to changing β in different biasing circuits.

Theory:
The operating point (Q) of a BJT is very important for amplifiers since a wrong ‘Q’ point selection increases
amplifier distortion. It is imperative to have a stable ‘Q’ point, meaning that the operating point should not be
sensitive to variation in temperature or gain of BJT (β), which can vary widely. In this experiment, four different
circuits will be analyzed for two different β to check the stability of biasing points.
The analysis of the BJT circuits is a systematic process. Initially, the operating point of a transistor circuit is
determined then the small signal BJT model parameters are calculated. Finally, the DC sources are eliminated,
the BJT is replaced with an equivalent circuit model, and the resulting circuit is analyzed to determine the voltage
amplification (AV), current amplification (AI), Input impedance (Zi), Output Impedance (Zo), and the phase relation
() between the input voltage (Vi) and the output voltage (Vo).
The experiment is a very good practical realization of the Bipolar Junction Transistor (BJT) biasing circuit. A
BJT biasing circuit will be designed and simulated to find a DC operating point using a circuit simulation tool.
Then a fixed-biasing and a self-biasing BJT circuits will be implemented on the trainer board to find a DC
operating point for two different β of the transistor.
The DC analysis is done to determine the mode of operation of the BJT and to determine the voltages at all nodes
and currents in all branches. The operating point of a transistor circuit can be determined by mathematical or
graphical (using transistor characteristic curves) means. Here, we will describe only the mathematical solution.

RC RC
RB1

RTH
VCC Q1 VCC
Q VTH

RB2

RE RE

(a) Original circuit (b) Thevenin equivalent circuit

Figure 1: Circuit diagram for biasing of an npn transistors.

We will use the most applied biasing circuit to operate the BJT as an amplifier. A single power supply is used
and the voltage divider network consisting of two resistors at the base, RB1 and RB2 is used to adjust the base
voltage. Using the Thevenin theorem, the voltage divider network may be modeled by a Thevenin equivalent
circuit and is replaced by Thevenin equivalent voltage, VTH and Thevenin equivalent resistance, RTH where,
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𝑅𝐵2
𝑉𝑇𝐻 = 𝑅 𝑉𝐶𝐶 , applying the VDR across two-resistor network.
𝐵1 +𝑅𝐵2
𝑅𝐵1 𝑅𝐵2
𝑅𝑇𝐻 = , shorting the voltage source, VCC at the base terminal.
𝑅𝐵1 +𝑅𝐵2

The DC analysis of the circuit is simple by applying KVL at the input and the output loops of Fig. 1 (b). Applying
KVL in the input loop of Fig. 1 (b).
𝑉𝑇𝐻 = 𝐼𝐵 𝑅𝑇𝐻 + 𝑉𝐵𝐸 + 𝐼𝐸 𝑅𝐸 = 𝐼𝐵 𝑅𝑇𝐻 + 𝑉𝐵𝐸 + (𝐼𝐵 + 𝐼𝐶 )𝑅𝐸
⟹ 𝑉𝑇𝐻 = 𝐼𝐵 𝑅𝑇𝐻 + 𝑉𝐵𝐸 + (𝐼𝐵 + 𝛽𝐼𝐵 )𝑅𝐸 = 𝐼𝐵 {𝑅𝑇𝐻 + (1 + 𝛽)𝑅𝐸 } + 𝑉𝐵𝐸
𝑉𝑇𝐻 − 𝑉𝐵𝐸
⟹ 𝐼𝐵 =
𝑅𝑇𝐻 + (1 + 𝛽)𝑅𝐸
Applying KVL in the output loop of Fig. 1 (b).
𝑉𝐶𝐶 = 𝐼𝐶 𝑅𝐶 + 𝑉𝐶𝐸 + 𝐼𝐸 𝑅𝐸 = 𝐼𝐶 𝑅𝐶 + 𝑉𝐶𝐸 + (𝐼𝐵 + 𝐼𝐶 )𝑅𝐸
⟹ 𝑉𝐶𝐶 = 𝐼𝐶 𝑅𝐶 + 𝑉𝐶𝐸 + 𝐼𝐶 𝑅𝐸 ; 𝐼𝐶 ≫ 𝐼𝐵
𝑉𝐶𝐶 − 𝑉𝐶𝐸
⟹ 𝐼𝐶 =
𝑅𝐶 + 𝑅𝐸
So, the quiescent point collector and emitter currents as well as collector-to-emitter voltage can be written as-
𝐼𝐶𝑄 = 𝛽𝐼𝐵
𝐼𝐸𝑄 = (1 + 𝛽)𝐼𝐵
𝑉𝐶𝐸𝑄 = 𝑉𝐶𝐶 − 𝐼𝐶𝑄 𝑅𝐶 − 𝐼𝐸𝑄 𝑅𝐸
If the BJT is in the active mode, the following typical values can be observed-
𝑉𝐵𝐸 = 0.7 V and 𝐼𝐶 = 𝛽𝐼𝐵
The collector resistance, RC is used to adjust the collector voltage, VC. Finally, the emitter resistance, RE is used
to stabilize the DC biasing point (operating point or quiescent point or Q-point). Using the above equations, the
stability of biasing points for different transistors of β can be calculated.

Note: It is a good idea to set the bias for a single stage amplifier to half the supply voltage, as this allows maximum
output voltage swing in both directions of an output waveform. For maximum symmetrical swing, it is clear from
the figure that the collector-to-emitter voltage, VCE should be equal to the half of the collector supply voltage, VCC
that is, VCE = VCC/2.

Circuit Configuration:
Figure 2 shows the symbol for the npn transistor and pnp transistor. The emitter of the BJT is always marked by
an arrow, which indicates whether the transistor is an npn or a pnp transistor

Figure 2: Emitter, collector, and base of transistors and the connection modes.

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There are three basic ways in which a BJT can be configured as shown in Fig. 2. In each case, one terminal is
common to both the input and output circuits shown in the figure above.
1. The common emitter configuration is used for voltage and current amplification and is the most common
configuration for transistor amplifiers.
2. The common collector configuration is often called an emitter follower since its output is taken from the
emitter resistor. It is useful as an impedance-matching device since its input impedance is much higher
than its output impedance.
3. The common base configuration is used for high-frequency applications because the base separates the
input and output, minimizing oscillations at high frequencies. It has a high voltage gain, relatively low
input impedance, and high output impedance compared to the common collector.

Biasing of Bipolar Junction Transistors:

In most cases, the BJT is used as an amplifier or switch. To perform these functions, the transistor must be
correctly biased. Depending on the bias condition (forward or reverse) of each of the BJT junctions, different
modes of operation of the BJT are obtained.
The three modes are defined as follows:
1. Active Mode: The emitter junction is forward-biased, and the collector junction is reverse-biased. If the
BJT is operated in active mode, then the BJT can be used as an amplifier.
2. Saturation Mode: Both the emitter and collector junctions are forward-biased. If the BJT is used as a
switch, the saturation mode corresponds to the on-state of the BJT.
3. Cut-off Mode: Both the emitter and collector junction are reverse-biased. If the BJT is used as a switch,
the cut-off mode corresponds to the off state of the BJT.
In this experiment, we will learn how to set the transistor in the active mode, that is the operating point should
be set in the active region of operation (blue shaded portion) in the output characteristics of the transistor as shown
in Fig. 3. To do this, we need to set a constant base current by adjusting the base bias resistor values.

Output Characteristics:
The output characteristics curves for a common emitter configured BJT are plotted between the collector current,
IC, and the collector-to-emitter voltage drop by keeping the base current, IB constant as shown in Fig. 3. These
curves are almost horizontal. The output dynamic resistance again can be calculated from the ratio of the small
change of emitter-to-collector voltage drop to the small change of the collector current.

Figure 3: BJT Common Emitter Output Characteristics.

Pre-Lab Homework:
Students will be provided with the upcoming lab manuals, and they will be asked to prepare the theoretical
(operations/working principle) information on the topic from the textbook.

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Besides, they must implement the circuit (as given in Figure 4) using a MultiSIM simulator. Observe the base
and collector currents as well as collector to emitter voltage through simulations (IB, IC, and VCE) and take
snapshots using the snipping tool. Measure the values of different key parameters and fill up the table (Table 1)
based on the simulation results. For simulation, use a 2N2222, or a C828, or BD135 transistor.

Apparatus:
SL# Apparatus Quantity
1 BJT (2N2222, C828, BD135) 1 each
Resistance (RB,POT = 0-500 k RC
2 1 each
= 470  RE = 560  R = 22 kΩ)
4 Project Board 1
7 DC milliammeter (0-50 mA) 1
8 DC microammeter (0-500 A) 1
9 Multimeter 1
10 Connecting Leads 10

Precaution!
The following is a list of some of the special safety precautions that should be taken into consideration when
working with transistors:
1. Never remove or insert a transistor into a circuit with voltage applied.
2. Ensure a replacement transistor into a circuit is in the correct direction.
3. Transistors are sensitive to being damaged by electrical overloads, heat, humidity, and radiation.
Damage of this nature often occurs by applying the incorrect polarity voltage to the collector circuit
or excessive voltage to the input circuit.
4. One of the most frequent causes of damage to a transistor is the electrostatic discharge from the
human body when the device is handled.
5. The applied voltage and current should not exceed the maximum rating of the given transistor.
6. Change the components or any of their properties by turning off the power/stopping the simulation.

Experimental Procedures:
(A) Study of BJT Fixed-Bias and Self-Bias Circuits:
1. Measure the actual values of the base and collector resistors.
2. Identify the terminals of the transistor and record the value of Beta ().
3. Connect the circuit and connect the microammeter and milliammeter as shown in Fig. 4 (a).
4. Connect the multimeter (voltmeter mode) to measure the base resistance voltage (VB) and input voltage (VBE).
5. Turn on both the DC power supply with the voltage control nob at 0 V and then set the collector supply
voltage, VCC to 15 V.
6. Now, adjust the 500 kΩ potentiometer until the collector-to-emitter voltage, VCE is approximately equal to
the half of the collector supply voltage, VCC that is, VCE = VCC/2.
7. Measure collector-to-emitter voltage, VCE, base-to-emitter voltage, VBE, base current, IB, and collector current,
IC. Calculate the based current, IB from the collector current, IC. Record them in Table 1.
8. Now replace the first transistor by the second one (having a different value of β) and repeat the steps 6-7.
9. Construct the self-bias circuit shown in Fig. 4 (b).
10. Measure the actual values of the base, emitter, and collector resistors, and repeat steps 2-8. In step 7, you
need to measure emitter current, IE.
11. Record the images of the hardware circuit diagrams.
12. Turn off the DC power supply.

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RB
RB 500kΩ 50 %
500kΩ 50 % Key=A
Key=A RC
RC

R
R
Q3 VCC
Q2 VCC

RE

(a) Fixed-Bias Circuit; (b) Self-Bias Circuit

Figure 4: Circuit diagram for the study of CE transistor bias circuits

Table 1 Data for the measurement of various bias circuit and transistor parameters
Transistor β VCE VBE IB IC IE

Fig. 4 (a)

% of Change

Fig. 4 (b)

% of Change

Questions:
1. Show the difference between your simulated and measured values. Comment on the results and interpret
the experimental and simulation data.
1. From the obtained data draw the output characteristic curves for a BJT and point out the Q point. Explain
the behavior of the circuit in this region of operation.
2. Determine the BJT parameters from the data sheet.
3. Why biasing is necessary for BJT?
4. What is the Q-point? What do you mean by stability? Discuss the significance of Q point in relation to
stability of the transistor circuit.
5. Compare the circuits of Figs. 4 (a) and 4 (b) with respect to stability against variation in β. Compare the
stability of fixed bias circuits to that of self-bias circuits.
6. Give your suggestions regarding this experiment.
7. Discuss the overall aspects of the experiment. Did your results match the expected ones? If not, explain.

References:
[1] Robert L. Boylestad, Louis Nashelsky, Electronic Devices and Circuit Theory, 9th Edition, 2007-2008
[2] Adel S. Sedra, Kenneth C. Smith, Microelectronic Circuits, Saunders College Publishing, 3rd ed., ISBN: 0-03-
051648-X, 1991.
[3] American International University–Bangladesh (AIUB) Electronic Devices Lab Manual.
[4] David J. Comer, Donald T. Comer, Fundamentals of Electronic Circuit Design, John Wiley & Sons Canada, Ltd.,
ISBN: 0471410160, 2002.
[5] J. Keown, ORCAD PSpice and Circuit Analysis, Prentice Hall Press (2001)
[6] Resistor values: https://www.eleccircuit.com/how-to-basic-use-resistor/, accessed on 20 September 2023.

List the references that you have used to answer the “Discussion” section.
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Appendix A: Identifying the terminals of an npn or a pnp transistor:

Following are the steps to identify npn and pnp transistors:

Step 1: Take the transistor you want to identify.
Step 2: Turn on a digital multimeter and set it to the DC voltage/resistance measurement mode.
Step 3: Make sure that you have connected the probes in their correct respective multimeter sockets, i.e., the black probe to the COM port
and the red probe to the V/ port.
Step 4: Randomly start connecting the multimeter probes to the terminal of an unknown type of transistor and watch readings on the screen.
Step 5: Now, some random connections will give you a voltage/resistance reading on the multimeter screen.
Step 6: Once you get results i.e., any values (must be less than 1 for voltage reading) on the screen, start from the right side with the
transistor’s flat side upward direction, and write or mark the probes attached to the terminals of the transistor.
Step 7: If it is a black probe first and a red probe second then transfer the black probe to the third terminal (left-most terminal). If you get
a similar result on the screen then write n, p, and n, that is the transistor is of npn type.
Step 8: If it is a red probe first and then a black probe second then transfer the red probe to the third terminal (left-most terminal). If you
get a similar result on the screen then write p, n, and p, that is the transistor is of pnp type.
Step 9: The values you get on the multimeter screen after and before transferring the probe from the right-most side to the left-most side
will differ slightly, the higher value-giving terminal is called the emitter and the lower value-giving terminal is called the collector, and
the common terminal in the middle is called the base.

Based on the above procedural steps using a multimeter in diode mode, the left terminal of this transistor is a p-type emitter (producing
larger value), the middle one is a p-type collector (less value), and the right one is called a base (common black terminal, so n-type). As
such, this is a pnp-type transistor.

Appendix B: The 2N2222 Data Sheet

The 2N2222 is a common NPN bipolar junction transistor (BJT) used for general-purpose low-power amplifying or switching applications.
It is designed for low to medium current, low power, medium voltage, and can operate at moderately high speeds. It was originally made
in the TO-18 metal can as shown in the picture.

2N2222A in metal TO-18 package with the emitter, base and

Pinout of 2N2222 variants in plastic TO-92 package.
collector identified as E, B, and C respectively.

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2N2222A in metal TO-18 package with the emitter, base and collector identified as E, B, and C respectively.

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Appendix C: The C828 Data Sheet

ST 2SC828 / 828A is an NPN Silicon Epitaxial Planar Transistor for switching and AF
amplifier applications. These transistors are subdivided into three groups Q, R and S
according to their DC current gain. On special request, these transistors can be manufactured
in different pin configurations. TO-92 Plastic Package Weight approx. 0.19 gm.

Pin configuration of TO-92 Plastic Package.

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