MOSFET Interview Question Answer
MOSFET Interview Question Answer
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Describe the main advantage of the Power MOSFET over other semiconductor
devices.
The MOSFET is a voltage-controlled majority charge carrier device in the output current
is controlled by the input voltage. The conduction of current in the n channel MOSFET is
done only by electrons whereas the current conduction in the p channel is done by holes.
The majority charge carriers in the MOSFET are controlled by gate voltage. The gate is
insulated by metal oxide layer therefore it is called as MOSFET.
Types of MOSFET
Depletion mode
Enhancement mode
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Whether the MOSFET is operated at low voltage?
What do you mean by the Depletion mode and Enhancement mode in the MOSFET?
Depletion mode
When the negative gate to source voltage is applied to N channel MOSFET, it is called as
depletion mode of the MOSFET.
Enhancement mode
When the positive gate to source voltage is applied to N channel MOSFET, it is called as
enhancement mode of the MOSFET.
Whether the doping level in the P type material and N type material is same in the N
channel MOSFET?
Doping level
The two ends n+ type material is heavily doped whereas the middle P type material is
moderately doped in the N channel MOSFET. The n- drift layer has lowest doping level.
Which parameter greatly affects the breakdown voltage of the n channel MOSFET?
Enhancement MOSFET
When the gate to source voltage is less than the threshold voltage, the MOSFET is
operated in the cut off region. The applied voltage must be less than the break down
voltage of the MOSFET. No drain current flows.
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Ohmic region
The MOSFET is operated in the ohmic region when the gate to source voltage is greater
than the gate to source threshold voltage ( VGS > VGS (TH) ).
The drain current is almost directly proportional to drain to source voltage for small value
drain to source voltage.
Active region
Give reason : There is no current flow between drain to source in the MOSFET
without gate bias.
The current does not flow between drain to source in the MOSFET without gate bias due
to two back-to-back PN junction diode
The planner type construction has long source to drain channel therefore large on state
resistance.
Which are the resistances present in the internal circuit of the MOSFET?
Channel resistance
Describe the effect of gate to source voltage on the on-state drain to source
resistance.
As the gate to source voltage increases, the on-state drain to source resistance
decreases and vice versa.
The main reason for switching delay is due to charging and discharging of input and
output capacitors in the MOSFET.
The on-state resistance of the MOSFET has positive temperature co – efficient therefore
the parallel connection is easily done.
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Why the switching speed of the Power MOSFET is higher than the bipolar
transistors?
Switching speed
The current conduction is done through only majority charge carriers. The turn off delay
does not occur due to recombination of minority charge carriers. Therefore, the speed of
the Power MOSFET is higher than the bipolar transistors.
Lighting control
Medical equipment
Relays
Induction heating
Robotics
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