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Exp3 Eee102 Lab Report

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145 views7 pages

Exp3 Eee102 Lab Report

Uploaded by

Nosheen Sneha
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Lab Report

Course: Electronic Circuit I


Course Code: EEE102 Lab
Section: 02

Experiment No: 03
Experiment Name: Observation of BJT common-emitter
(CE) characteristics

Group No: 08
Student Name: Niaz Morshed Razon
Student ID: 2022-2-80-008

Submitted To:
Dr. M. Ryyhan Khan

East West University


Department of Electrical and Electronics Engineering
OBJECTIVE
The objective of this experiment is to measure the common-emitter output characteristics of an npn
bipolar transistor and to view the characteristics graphically.

REQUIRED PARTS AND EQUIPMENTS


1. One of each: 2N2222 BJT, 100k, 1.8k
2. Digital trainer board
3. Multimeter and connecting wires

Circuit Diagram:

Figure-1: CE Configuration

Experimental Data:
R1 = 1.75 k R2= 98 k IC= 3.94 mA
VR1= 6.90 V VR2 = 0.67 IB = 6.32 mA

VR2 = 0.64 V After adding 1.2-volt Source


VBE= 0.62 V

Table 1:
IB = 6.25 μA

VCE(V) 0.05 0.1 0.15 0.2 0.25 0.3 0.5 0.7 1.0 1.5 2.0 3.0 4.0 6.0

V2(V) 0.7 2.1 2.7 2.9 3.0 3.1 3.3 3.5 3.8 4.3 4.8 5.8 6.9 9.0

VR1(V) 0.58 1.89 2.52 2.67 2.69 2.70 2.70 2.72 2.73 2.74 2.73 2.76 2.78 2.83

IC(mA) 0.32 1.06 1.42 1.50 1.51 1.52 1.52 1.53 1.53 1.54 1.53 1.55 1.56 1.59

Table 2:
VR2 = 1.42V IB = 14.8 μA V1 = 2.07V VBE = 0.66V

VCE(V) 0.0 0.1 0.1 0.2 0.2 0.3 0.5 0.7 1.0 1.5 2.0 3.0 4.0 6.0
5 5 5

V2(V) 1.6 5.0 7.0 7.5 7.6 7.7 8.0 8.1 8.5 9.1 9.6 10. 11. 14.
6 7 0

VR1(V) 1.4 4.8 6.7 7.2 7.3 7.37 7.34 7.26 7.42 7.45 7.3 7.5 7.7 7.9
8 3 7 7 2 6 4 8 9

IC(mA) 0.8 2.7 3.8 4.0 4.1 4.14 4.12 4.07 4.17 4.18 4.1 4.2 4.3 4.4
3 1 0 8 1 3 3 7 9

Answer to the Lab Report Question

Q1. Plot the IC-VCE curves using lab measured data. Label and caption the graphs.

Graph-1:

Graph-2:
Graph-3:

Q2. As we know, β = IC / IB

When, IB = 6.25μA (from experiment):


At VCE = 1V corresponding IC is 1.53mA By
putting IB = 6.25μA and IC = 1.53mA in

β = IC / IB = 1.53x10-3 / 6.25x10-6 = 244.8

When, IB = 14.8μA (from experiment):


At VCE = 1V corresponding IC is 4.17mA By
putting IB = 14.8μA and IC = 4.17mA in

β = IC / IB = 4.17x10-3 / 14.8x10-6 = 281.75

Q3.
The value of β varies for different IB:
IB Value of β
6.25μA 244.8
14.8μA 281.75
The DC current gain, β, in a npn bipolar junction transistor (BJT) can change depending on the base current,
IB, value. This is because the collector current, or IC, depends on the value of β as well as the base current.
The collector current rises in tandem with the base current, although their relationship is nonlinear. Rather,
the value of β determines the proportionality between the collector current and the base current raised to a
power. As a result, the value of β increases initially and then begins to decrease as the base current increases.
The transistor in question determines the precise relationship between β and IB.

Q4: Output resistance r0 is change in VCE divided by change in IC

When, IB = 6.25μA (from experiment):


At VCE1 = 1V corresponding IC1 is 1.53mA
At VCE2 = 3V corresponding IC2 is 1.55mA

So, r0 = 𝜕 𝑉𝐶𝐸 = 3-1 / 1.55 -1.53 = 100kΩ

When, IB = 14.8μA (from experiment):


At VCE1 = 1V corresponding IC1 is 4.17mA
At VCE2 = 3V corresponding IC2 is 4.23mA

So, r0 = 𝜕 𝑉𝐶𝐸 = 3-1 / 4.23 - 4.17 = 33.3kΩ

Q5: As r0 is VA divided by IC

When, IB = 6.25μA (from experiment):


At VCE = 1V corresponding IC is 1.53mA so r0 = 100kΩ from Q4

Q6.
Q7.

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