Green

Product
STM8309
SamHop Microelectronics Corp.
Oct.13, 2006

Dual Enhancement Mode Field Effect Transistor ( N and P Channel)

PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel)

VDSS ID RDS(ON) ( m Ω ) Max VDSS ID RDS(ON) ( m Ω ) Max

23 @ VGS = 10V 35 @ VGS = -10V

30V 7A -30V -6A
30 @ VGS = 4.5V 52 @ VGS = -4.5V

D1 D1 D2 D2
8 7 6 5

SO-8
1
1 2 3 4
S1 G1 S2 G2

ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)

Parameter Symbol N-Channel P-Channel Unit
Drain-Source Voltage VDS 30 -30 V
Gate-Source Voltage VGS 20 20 V

a
Drain Current-Continuous @TJ=25 C
ID 7 -6 A
b
-Pulsed IDM 28 -24 A
a
Drain-Source Diode Forward Current IS 1.7 -1.7 A
a
Maximum Power Dissipation PD 2.0 W
Operating Junction and Storage TJ, TSTG -55 to 150 C
Temperature Range

THERMAL CHARACTERISTICS
a
Thermal Resistance, Junction-to-Ambient R JA 62.5 C /W

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N-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted)

Parameter S ymbol Condition Min Typ C Max Unit

5 OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = 250uA 30 V
Zero Gate Voltage Drain Current IDS S V DS = 24V, V GS = 0V 1 uA
Gate-Body Leakage IGS S V GS = 20V, V DS = 0V 10 uA
ON CHAR ACTE R IS TICS b
Gate Threshold Voltage V GS (th) V DS = V GS , ID = 250uA 1.0 1.9 3 V
V GS =10V, ID =7A 17 23 m ohm
Drain-S ource On-S tate R esistance R DS (ON)
V GS =4.5V, ID =5A 23 30 m ohm
On-S tate Drain Current ID(ON) V DS = 15V, V GS = 10V 20 A
Forward Transconductance gFS V DS = 10V, ID =7A 14 S
DYNAMIC CHAR ACTE R IS TICS c
Input Capacitance C IS S 680 PF
V DS =15V, V GS = 0V
Output Capacitance C OS S 190 PF
f =1.0MH Z
R everse Transfer Capacitance CRSS 115 PF
c
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time tD(ON) V DD = 15V, 12 ns
ID = 7A,
R ise Time tr 17.5 ns
R L=2.1 ohm,
Turn-Off Delay Time tD(OFF) V GS = 10V, 41 ns
R GEN = 6 ohm
Fall Time tf 15 ns
V DS =15V, ID =7A,V GS =10V 11 nC
Total Gate Charge Qg
V DS =15V, ID =7A,V GS =4.5V 5.5 nC
Gate-S ource Charge Q gs V DS =15V, ID = 7A, 1.7 nC
Gate-Drain Charge Q gd V GS =10V 3.3 nC
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P-Channel ELECTRICAL CHARACTERISTICS (T A =25 C unless otherwise noted)
Parameter S ymbol Condition Min Typ C Max Unit
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = -250uA -30 V
Zero Gate Voltage Drain Current IDS S V DS = -24V, V GS = 0V -1 uA
Gate-Body Leakage IGS S V GS = 20V, V DS = 0V 10 uA
ON CHAR ACTE R IS TICS b
Gate Threshold Voltage V GS (th) V DS = V GS , ID = -250uA -1 -1.9 -3 V
V GS =-10V, ID= -5A 29 35 m ohm
Drain-S ource On-S tate R esistance R DS (ON)
V GS = -4.5V, ID= -4A 44 52 m ohm
On-S tate Drain Current ID(ON) V DS = -15V, V GS = -10V -20 A
Forward Transconductance gFS V DS = -15V, ID = - 5A 8.5 S
DYNAMIC CHAR ACTE R IS TICS c
Input Capacitance C IS S 870 PF
V DS =-15V, V GS = 0V
Output Capacitance C OS S 225 PF
f =1.0MH Z
R everse Transfer Capacitance CRSS 125 PF
c
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time tD(ON) V D = -15V, 12 ns
R ise Time tr R L=15 ohm, 18 ns
ID = -1A,
Turn-Off Delay Time tD(OFF) V GE N = -10V, 70 ns
Fall Time tf R GEN =6 ohm 40 ns
V DS =-15V,ID=-5A,V GS =-10V 15 nC
Total Gate Charge Qg
V DS =-15V,ID=-5A,V GS =-4.5V 7.5 nC
Gate-S ource Charge Q gs V DS =-15V, ID = - 5A, 1.7 nC
Gate-Drain Charge Q gd V GS =-10V 4.5 nC
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ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)
C
Parameter Symbol Condition Min Typ Max Unit
b
DRAIN-SOURCE DIODE CHARACTERISTICS
VGS = 0V, Is =1.7A N-Ch 0.8 1.2
Diode Forward Voltage VSD VGS = 0V, Is =-1.7A P-Ch -0.8 -1.2 V
5
Notes
a.Surface Mounted on FR4 Board,tІ10sec.
b.Pulse Test:Pulse WidthІ300Ӵs,Duty Cycle І 2%.
c.Guaranteed by design,not subject to production testing.
N-Channel

40 20
VGS=5V
VGS=10V VGS=4V
VGS=4.5V
32 16
ID, Drain Current(A)

ID, Drain Current (A)

24 12
VGS=3.5V 25 C
Tj=125 C
16 8

-55 C
VGS=3V
8 4

0 0
0 0.5 1 1.5 2 2.5 3 0 0.7 1.4 2.1 2.8 3.5 4.2
VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V)

Figure 1. Output Characteristics Figure 2. Transfer Characteristics

60 1.5
R DS (ON) , On-R es is tance

50 1.4 V G S =10V
I D =7A
R DS (on) (m Ω)

Normalized

40 1.3

30 V G S =4.5V 1.2

20 1.1 V G S =4.5V
I D =5A
V G S =10V
10 1.0

1 0.9
1 8 16 24 32 40 -25 0 25 50 75 100 125 150
T j( C )
I D , Drain C urrent (A) T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent F igure 4. On-R es is tance Variation with
and G ate V oltage Drain C urrent and Temperature

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Drain-S ource B reakdown V oltage

G ate-S ource T hres hold V oltage

1.3 1.15

1.2 V DS =V G S I D =250uA
1.10
I D =250uA

B V DS S , Normalized
V th, Normalized

1.1 1.05
1.0
1.00
0.9
0.95
0.8
0.90
6 0.7

0.6 0.85
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
T j, J unction T emperature ( C ) T j, J unction T emperature ( C )

F igure 5. G ate T hres hold V ariation F igure 6. B reakdown V oltage V ariation

with T emperature with T emperature

49 20.0
I D =7A
42
Is , S ource-drain current (A)

10.0
R DS (on) (m Ω)

35
75 C
28 125 C
75 C
21
25 C
125 C
25 C
14

7 1.0
0 2 4 6 8 10 0.4 0.6 0.8 1.0 1.2 1.4

V G S , G ate-S ource Voltage (V ) V S D , B ody Diode F orward V oltage (V )

F igure 7. On-R es is tance vs . F igure 8. B ody Diode F orward V oltage

G ate-S ource V oltage V ariation with S ource C urrent

5
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900 10

V G S , G ate to S ource V oltage (V )

V DS =15V
750 8 I D =7A
Ciss
C, Capacitance (pF)

600
6
450
4
300

6 150
Crss
Coss 2

0
0
0 5 10 15 20 25 30 0 2 4 6 8 10 12 14 16
VDS, Drain-to Source Voltage (V) Qg, T otal G ate C harge (nC )

F igure 8. C apacitance F igure 9. G ate C harge

250 40
it
im
)L
10 S(
ON
S witching T ime (ns )

Tr
RD
I D , Drain C urrent (A)

100 10m
s
60 T D(off) 100
Tf ms
T D(on)

10 11 1s
DC

0.1 V G S =10V
V DS =15V ,ID=7A
1 S ingle P ulse
V G S =10V T A =25 C
0.03
1 6 10 60 100 300 600 0.1 1 10 30 50

R g, G ate R es is tance ( Ω)
V DS , Drain-S ource V oltage (V )
F igure 11.s witching characteris tics
F igure 10. Maximum S afe
O perating Area

6
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P-Channel

20 20
VGS=10V
VGS=5V 125 C
VGS=4V
16 16
-I D , Drain C urrent (A)

-I D , Drain C urrent (A)

VGS=4.5V
12 12
VGS=3.5V
25 C
8 8
-55 C

4 VGS=3V 4

0 0
0 0.5 1 1.5 2 2.5 3 0 0.9 1.8 2.7 3.6 4.5 5.4

-V DS , Drain-to-S ource Voltage (V ) -V G S , G ate-to-S ource Voltage (V )

F igure 1. Output C haracteris tics F igure 2. Trans fer C haracteris tics

90 1.5
R DS (ON) , On-R es is tance

75 1.4
V G S =-10V
R DS (on) (m Ω)

Normalized

60 1.3 I D =-5A
V G S =-4.5V
45 1.2
V G S =-4.5V
30 1.1 I D =-4A
V G S =-10V
15 1.0

1
1 4 8 12 16 20 0 25 50 75 100 125 150
T j( C )
-I D , Drain C urrent (A) T j, J unction T emperature ( C )

F igure 3. On-R es is tance vs . Drain C urrent F igure 4. On-R es is tance Variation with
and G ate V oltage Drain C urrent and Temperature

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1.2 1.3

Drain-S ource B reakdown V oltage

G ate-S ource T hres hold V oltage

V DS =V G S I D =-250uA
1.1 1.2
I D =-250uA
1.0

B V DS S , Normalized
1.1
V th, Normalized

0.9
1.0
0.8
5 0.9
0.7

0.6 0.8

0.5 0.7
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

T j, J unction T emperature ( C ) T j, J unction T emperature ( C )

F igure 5. G ate T hres hold V ariation F igure 6. B reakdown V oltage V ariation
with T emperature with T emperature

100 20.0
I D =-5A
90
-Is , S ource-drain current (A)

10.0
R DS (on) (m Ω)

80

60
125 C 125 C 25 C
40

75 C 25 C
20
75 C

0 1.0
0 2 4 6 8 10 0 0.25 0.5 0.75 1.0 1.25

-V G S , G ate- S ource Voltage (V ) -V S D , B ody Diode F orward V oltage (V )

F igure 7. On-R es is tance vs . F igure 8. B ody Diode F orward V oltage

G ate-S ource V oltage V ariation with S ource C urrent

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1200 10

-V G S , G ate to S ource V oltage (V )

V DS =-15 V
1000 8
Ciss
I D =-5A
C, Capacitance (pF)

800
6
600

4
400

Coss 2
6 200
Crss
0 0
0 5 10 15 20 25 30 0 2 4 6 8 10 12 14 16
VDS, Drain-to Source Voltage (V) Qg, T otal G ate C harge (nC )
F igure 8. C apacitance F igure 9. G ate C harge

250 50

Tr it
10 im
)L
-I D , Drain C urrent (A)
S witching T ime (ns )

100 T D(off) S(
ON
RD 10m
60 s
Tf 100
T D(on)
ms

10 11 1s
DC

0.1 V G S =-10V
V D S = -15V,I D=-1A
1 S ingle P ulse
V G S = -10 V
T A =25 C
0.03
1 6 10 60 100 300 600 0.1 1 10 50

R g, G ate R es is tance ( Ω) -V DS , B ody Diode F orward V oltage (V )

F igure 11.s witching characteris tics F igure 10. Maximum S afe

O perating Area

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V DD
ton toff
RL td(on) tr td(off) tf
V IN 90%
90%
D V OUT
5 VG S V OUT 10% INVE R TE D 10%
RGE N G
90%
50% 50%
S V IN
10%

P ULS E WIDTH

F igure 13. S witching T es t C ircuit F igure 14. S witching Waveforms

N-C hannel
9
Normalized Transient

1
Thermal Resistance

0.5

0.2
0.1
0.1 P DM
0.05
t1
t2
0.02
0.01 1. R thJ A (t)=r (t) * R thJ A
2. R thJ A =S ee Datas heet
0.01 Single Pulse 3. T J M-T A = P DM* R thJ A (t)
4. Duty C ycle, D=t1/t2

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
P-C hannel
9
Normalized Transient
Thermal Resistance

1 0.5

0.2

0.1
0.1 P DM
0.05
t1
0.02 t2

0.01 1. R thJ A (t)=r (t) * R thJ A

2. R thJ A =S ee Datas heet
Single Pulse
0.01 3. T J M-T A = P DM* R thJ A (t)
4. Duty C ycle, D=t1/t2

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve

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PAC K AG E OUT LINE DIME NS IONS

S O-8

E
D

0.015X45±
C
A

0.008
TYP.
A1

e B
0.05 TYP. 0.016 TYP.
H

MILLIME T E R S INC HE S
S Y MB OLS
MIN MAX MIN MAX
A 1.35 1.75 0.053 0.069
A1 0.10 0.25 0.004 0.010
D 4.80 4.98 0.189 0.196
E 3.81 3.99 0.150 0.157
H 5.79 6.20 0.228 0.244
L 0.41 1.27 0.016 0.050
0± 8± 0± 8±

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SO-8 Tape and Reel Data

SO-8 Carrier Tape

unit:р
PACKAGE A0 B0 K0 D0 D1 E E1 E2 P0 P1 P2 T
ӿ1.5
SOP 8N ӿ1.5 12.0 5.5²0.05 8.0 4.0 2.0²0.05 0.3²0.05
6.40 5.20 2.10 +0.1 1.75
150п (MIN) ²0.3
- 0.0

SO-8 Reel

UNIT:р

TAPE SIZE REEL SIZE M N W W1 H K S G R V

12 р ӿ330 330 62 ӿ12.75 2.0²0.15

12.4+ 0.2 16.8- 0.4
² 1 ²1.5 + 0.15

12