MEL ZG632 EC-3R First SEM 2023-2024
MEL ZG632 EC-3R First SEM 2023-2024
Q.1. For amplifier shown below I_Bias = 200 µA. VDD = 3 V. All transistors are in saturation. All
transistors have W/L = 80 µm / 2 µm. Neglect body effect. Channel length modulation is to be
neglected for DC analysis. Find: -
(i) The DC voltage at the gates of the pMOSFETs. (2)
(ii) Transconductance gm of Q1 (2)
(iii) Small signal output resistance rout (2)
(iv) Small signal gain (2)
Total 8 Marks
Q.2.
For amplifier shown below DC voltage at VO1 = VO2 = 3V. RD1 = RD2 = 5 K. All transistors are in
saturation and have W/L = 80 µm / 2 µm. Neglect body effect and channel length modulation. Find: -
(i) The I_Bais (2)
(ii) Transconductance gm of Q1 and Q2 (2)
(iii) Small signal differential gain (V02-V01) / (Vin+ - Vin-) (2)
(iv) Common mode gain (1)
(v) CMMR (1)
(vi) Max VCM for transistors to be in saturation (neglecting small signal Vin+ and Vin-) (1)
(vii) If Vin+ = - Vin- = 100 mV sin 2π (1KHz)t, find V01 and VO2 (2)
(viii) If Vin+ = Vin- = 0 and VCM = 100 mV sin 2π (1KHz)t find V01 and VO2 (1)
Total 12 Marks
Q.3.
For the amplifier shown below the transconductance gm of both transistors is 1 mA/V. Neglect body
effect and channel length modulation. Find: -