STTH 512
STTH 512
Description
$ . The high quality design of this diode has
produced a device with low leakage current,
regularly reproducible characteristics and intrinsic
. ruggedness. These characteristics make it ideal
for heavy duty applications that demand long term
reliability.
Such demanding applications include industrial
$ power supplies, motor control, and similar
$ . mission-critical systems that require rectification
72$& .
and freewheeling. These diodes also fit into
72)3$&
auxiliary functions such as snubber, bootstrap,
and demagnetization applications.
.
. The improved performance in low leakage
current, and therefore thermal runaway guard
1& band, is an immediate competitive advantage for
1& this device.
$
$
Table 1. Device summary
'3$.
Symbol Value
IF(AV) 5A
Features VRRM 1200 V
Ultrafast, soft recovery Tj(max) 175 °C
Very low conduction and switching losses VF (typ) 1.25 V
High frequency and/or high pulsed current
trr (typ) 48 ns
operation
High reverse voltage capability
High junction temperature
ECOPACK®2 compliant component for DPAK
on demand
Insulated package: TO-220FPAC
– Insulated voltage: 2000 VRMS sine
1 Characteristics
Tj = 25° C 5
IR(1) Reverse leakage current VR = VRRM µA
Tj = 125° C 3 30
Tj = 25° C 2.20
VF (2)
Forward voltage drop Tj = 125° C IF = 5 A 1.30 2.00 V
Tj = 150° C 1.25 1.90
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
Figure 1. Conduction losses versus average Figure 2. Forward voltage drop versus forward
current current
P(W) IFM(A)
13 50
δ = 0.1 δ = 0.2 δ = 0.5 δ=1
12
45
11 δ = 0.05 Tj=150°C
40 (typical values)
10
9 35
8 30
7
25 Tj=25°C
6 (maximum values)
5 20 Tj=150°C
(maximum values)
4 15
3 T
10
2
5
1 IF(AV)(A) VFM(V)
δ =tp/T tp
0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0.7 0.7
0.6 0.6
0.5 0.5
0.4 0.4
0.3 0.3
0.2 0.2
Figure 5. Peak reverse recovery current versus Figure 6. Reverse recovery time versus dIF/dt
dIF/dt (typical values) (typical values)
IRM(A) trr(ns)
28 600
VR=600V
26 VR=600V 550 Tj=125°C
Tj=125°C
24 500
22 IF=2 x IF(AV)
450
20
400
18 IF=IF(AV)
16 350 IF=2 x IF(AV)
IF=0.5 x IF(AV)
14 300 IF=IF(AV) IF=0.5 x IF(AV)
12 250
10
200
8
150
6
4 100
2 dIF/dt(A/µs) 50
dIF/dt(A/µs)
0 0
0 100 200 300 400 500 0 100 200 300 400 500
Figure 7. Reverse recovery charges versus Figure 8. Softness factor versus dIF/dt (typical
dIF/dt (typical values) values)
Qrr(nC) S factor
2000 4.0
VR=600V IF ≤ 2xIF(AV)
1800 Tj=125°C VR=600V
3.5 Tj=125°C
1600 IF=2 x IF(AV)
1400 3.0
1200
IF=IF(AV) 2.5
1000
IF=0.5 x IF(AV)
2.0
800
600 1.5
400
1.0
200
dIF/dt(A/µs) dIF/dt(A/µs)
0 0.5
0 100 200 300 400 500 0 100 200 300 400 500
Figure 9. Relative variations of dynamic Figure 10. Transient peak forward voltage
parameters versus junction temperature versus dIF/dt (typical values)
VFP(V)
2.25 50
IF=IF(AV)
VR=600V IF=IF(AV)
2.00 Reference: Tj=125°C 45 Tj=125°C
1.75 40
S factor
1.50 35
1.25 30
1.00 25
trr 20
0.75
IRM
15
0.50
QRR 10
0.25
Tj(°C)
5
0.00 dIF/dt(A/µs)
25 50 75 100 125 0
0 50 100 150 200 250 300
Figure 11. Forward recovery time versus Figure 12. Junction capacitance versus reverse
dIF/dt (typical values) voltage applied (typical values)
tfr(ns) C(pF)
700 100
IF=IF(AV) F=1MHz
VFR=1.5 x VF max. VOSC=30mVRMS
Tj=125°C Tj=25°C
600
500
10
400
300
dIF/dt(A/µs) VR(V)
200 1
0 50 100 150 200 250 300 350 400 450 500 1 10 100 1000
Figure 13. Thermal resistance junction to ambient versus copper surface under tab
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2 Package information
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3 Ordering information
4 Revision history
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