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N-Channel 60-V (D-S) MOSFET

FEATURES
PRODUCT SUMMARY
• Halogen-free
VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.)
• TrenchFET® Power MOSFET
0.076 at VGS = 10 V 4.5 RoHS
60 10 nC COMPLIANT
0.085 at VGS = 4.5 V 3.5 APPLICATIONS
• Load Switches for Portable Devices

SOT-223-3
D G

S
D
G
S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 60
V
Gate-Source Voltage VGS ± 20
TC = 25 °C 4.5
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
ID 3.2 a
TA = 25 °C 2.7
TA = 70 °C 2.3 A
Pulsed Drain Current IDM 20
TC = 25 °C 3.2
Continuous Source-Drain Diode Current IS
TA = 25 °C 2.1b, c
TC = 25 °C 4.0
TC = 70 °C 3.0
Maximum Power Dissipation PD W
TA = 25 °C 2.5b, c
TA = 70 °C 1.6b, c
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150
°C
Soldering Recommendations (Peak Temperature)e, f 260

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambienta, c, d t≤5s RthJA 40 50
°C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 15 20
Notes:
a. Package limited, TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 95 °C/W.
e. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
f. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

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SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 60 V
VDS Temperature Coefficient ΔVDS /TJ 25
ID = 250 µA
VGS(th) Temperature Coefficient ΔVGS(th)/TJ - 4.0 mV/°C

Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA 1.0 2.5 V

Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 100 nA
VDS = 60 V, VGS = 0 V 1
Zero Gate Voltage Drain Current IDSS
VDS = 60 V, VGS = 0 V, TJ = 55 °C 10 µA

On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 4.5 V 30 A

VGS = 10 V , ID = 4.0 A 0.076
Drain-Source On-State Resistancea RDS(on) Ω
VGS = 4.5 V, ID = 3.0 A 0.085
Forward Transconductancea gfs VDS = 10 V, ID = 4.0 A 45 S
b
Dynamic
Input Capacitance Ciss 810
Output Capacitance Coss VDS = 30V , VGS = 0 V, f = 1 MHz 120 pF
Reverse Transfer Capacitance Crss 100
VDS = 30 V, VGS = 10 V, ID = 4.0 A 22 33
Total Gate Charge Qg
10 15
nC
Gate-Source Charge Qgs VDS = 30 V, VGS = 4.5 V, ID = 3.0 A 2.5
Gate-Drain Charge Qgd 1.7
Gate Resistance Rg f = 1 MHz 2.4 Ω
Turn-on Delay Time td(on) 15 25
Rise Time tr VDD =30V, , RL = 1.5 Ω 10 15
Turn-Off Delay Time td(off) ID ≅ 4.0 A, VGEN = 4.5 V, Rg = 1 Ω 35 55
Fall Time tf 12 20
ns
Turn-on Delay Time td(on) 10 15
Rise Time tr VDD = 30V , RL = 1.5 Ω 12 20
Turn-Off Delay Time td(off) ID ≅ 4.0 A, VGEN = 10 V, Rg = 1 Ω 25 40
Fall Time tf 10 15
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current IS TC = 25 °C 7.2
A
Pulse Diode Forward Current ISM 30
Body Diode Voltage VSD IS = 4.0 A, VGS = 0 V 0.8 1.2 V
Body Diode Reverse Recovery Time trr 20 40 ns
Body Diode Reverse Recovery Charge Qrr 10 20 nC
IF = 4.0 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Fall Time ta 10
ns
Reverse Recovery Rise Time tb 10
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20 10
VGS =10thru 5 V
TC = - 55 °C

10 8

I D - Drain Current (A)

I D - Drain Current (A)

8 6

VGS = 4V TC = 125 °C

6 4

4 2
TC = 25 °C
VGS =2.5 V
VGS = 3.5 V
0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0

VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Output Characteristics Transfer Characteristics

0.014 1000

0.013 Ciss
800
RDS(on) - On-Resistance (Ω)

0.012
C - Capacitance (pF)

0.011 600

0.010
VGS = 4 . 5 V
400
0.009
Coss
0.008
VGS = 1 0 V 200
0.007
Crss
0 0
0 6 12 18 24 30 0 15 30 45 60

ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current Capacitance

10 1.6
ID = 6.3 A
ID = 6.3 A
VGS = 4.5 V, 10 V
VGS - Gate-to-Source Voltage (V)

8 1.4
VDS = 10 V
R DS(on) - On-Resistance

6
(Normalized)

1.2
VDS = 16 V

4 1.0

2 0.8

0 0.6
0 5 10 15 20 25 - 50 - 25 0 25 50 75 100 125 150

Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)

Gate Charge On-Resistance vs. Junction Temperature

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

100 0.050
ID = 4.0 A

0.040

R DS(on) - On-Resistance (Ω)

I S - Source Current (A)

TJ = 150 °C 0.030
TJ = 25 °C
10

0.020 TJ = 125 °C

TJ = 25 °C
0.010

1 0.000
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

1.4 50

1.2 ID = 250 µA 40

30
Power (W)
V GS(th) (V)

1.0

0.8 20

0.6 10

0.4 0
- 50 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 100 600
TJ - Temperature (°C) Time (s)
Threshold Voltage Single Pulse Power

100

10 Limited by RDS(on)* 10 µs

100 µs
I D - Drain Current (A)

1 ms
1
10 ms
100 ms, DC

0.1
TC = 25 °C
Single Pulse
BVDSS Limited

0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Single Pulse Power, Junction-to-Case

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
18 8

15
6
ID - Drain Current (A)

12

Power (W)
9 4

Package Limited
6
2
3

0 0
0 25 50 75 100 125 150 25 50 75 100 125 150

TC - Case Temperature (°C) TC - Case Temperature (°C)

Current Derating* Power Derating

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

1
Duty Cycle = 0.5

0.2
ffecti

Notes:
0.1
0.1 PDM
0.05
t1
t2
t1
0.02 1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 80 °C/W

Single Pulse 3. TJM - TA = PDMZthJA(t)

4. Surface Mounted
0.01
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2

0.1
0.1
0.05

0.02

Single Pulse
0.01
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot

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SOT-223 (HIGH VOLTAGE)

D B A
3
0.08 (0.003)
B1
C
0.10 (0.004) M C B M
A
4

3 H
E
0.20 (0.008) M C A M
L1
1 2 3
4xL
3xB
e θ
0.10 (0.004) M C B M
e1
4xC

MILLIMETERS INCHES
DIM. MIN. MAX. MIN. MAX.
A 1.55 1.80 0.061 0.071
B 0.65 0.85 0.026 0.033
B1 2.95 3.15 0.116 0.124
C 0.25 0.35 0.010 0.014
D 6.30 6.70 0.248 0.264
E 3.30 3.70 0.130 0.146
e 2.30 BSC 0.0905 BSC
e1 4.60 BSC 0.181 BSC
H 6.71 7.29 0.264 0.287
L 0.91 - 0.036 -
L1 0.061 BSC 0.0024 BSC
θ - 10' - 10'
ECN: S-82109-Rev. A, 15-Sep-08
DWG: 5969
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions are shown in millimeters (inches).
3. Dimension do not include mold flash.
4. Outline conforms to JEDEC outline TO-261AA.

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