SD2942

HF/VHF/UHF RF power N-channel MOSFET

Datasheet - production data

Features
 Gold metallization
 Excellent thermal stability
 Common source push-pull configuration
 POUT = 350 W min. with 15 dB gain @ 175
MHz
 Low RDS(on)

Description
Figure 1: Pin connection The SD2942 is a gold metallized N-channel MOS
field-effect RF power transistor. The SD2942
offers 25% lower RDS(ON) than industry standard
and 20% higher power saturation than ST
SD2932. These characteristics make the SD2942
ideal for 50 V DC very high power applications up
to 250 MHz.

Table 1: Device summary

Order code Marking Package Packing
SD2942W SD2942(1) M244 Tube

Notes:
(1)For more details please refer to Section 6: "Marking, packing and shipping specifications" .

November 2016 DocID11736 Rev 5 1/17

This is information on a product in full production. www.st.com
Contents SD2942

Contents
1 Electrical data .................................................................................. 3
1.1 Maximum ratings ............................................................................... 3
1.2 Thermal data ..................................................................................... 3
2 Electrical characteristics ................................................................ 4
3 Impedance data ............................................................................... 5
4 Typical performance ....................................................................... 6
5 Test circuit (175 MHz) .................................................................... 10
6 Marking, packing and shipping specifications............................ 13
7 Package information ..................................................................... 14
7.1 M244 package information .............................................................. 14
8 Revision history ............................................................................ 16

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SD2942 Electrical data

1 Electrical data
1.1 Maximum ratings
TCASE = 25 °C
Table 2: Absolute maximum ratings
Symbol Parameter Value Unit
V(BR)DSS(1) Drain source voltage 130 V
VDGR Drain-gate voltage (RGS = 1 MΩ) 130 V
VGS Gate-source voltage ±40 V
ID Drain current 40 A
PDISS Power dissipation 500 W
TJ Max. operating junction temperature +200 °C
TSTG Storage temperature -65 to +150 °C

Notes:
(1)T
J = 150 °C

1.2 Thermal data

Table 3: Thermal data
Symbol Parameter Value Unit
RthJC Junction-to-case thermal resistance 0.35 °C/W

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Electrical characteristics SD2942

2 Electrical characteristics
TCASE = 25 °C
Table 4: Static
Symbol Test conditions Min. Typ. Max. Unit
V(BR)DSS(1) VGS = 0 V IDS = 100 mA 130 V
IDSS VGS = 0 V VDS = 50 V 100 µA
IGSS VGS = 20 V VDS = 0 V 250 nA
VGS(Q) VDS = 10 V ID = 250 mA 1.5 4 V
VDS(ON) VGS = 10 V I D = 10 A 3.0 V
GFS VDS = 10 V ID=5A 5 mho
CISS VGS = 0 V VDS = 50 V f = 1 MHz 415 pF
COSS VGS = 0 V VDS = 50 V f = 1 MHz 236 pF
CRSS VGS = 0 V VDS = 50 V f = 1 MHz 17 pF

Notes:
(1)T
J = 150 °C

Table 5: Dynamic
Symbol Test conditions Min. Typ. Max. Unit
POUT VDD = 50 V IDQ = 500 mA f = 175 MHz 350 W
VDD = 50 V IDQ = 500 mA POUT = 350 W
GPS 15 17 dB
f = 175 MHz
VDD = 50 V IDQ = 500 mA POUT = 350 W
ηD 55 61 %
f = 175 MHz
VDD = 50 V IDQ = 500 mA POUT = 350 W
Load
f = 175 MHz 5:1 VSWR
mismatch
All phase angles

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SD2942 Impedance data

3 Impedance data
Figure 2: Impedance data

Table 6: Impedance data

f ZIN(Ω) ZDL(Ω)
250 MHz 1.3 - j 1.9 1.9 + j 3.2
230 MHz 1.2 - j 1.8 2.1 + j 3.7
200 MHz 1.1 - j 1.6 2.7 +j 4.2
175 MHz 1.0 - j 1.4 3.3 + j 4.8
100 MHz 1.8 - j 2.5 7.5 + j 9
50 MHz 3.2 - j 4.4 10 + j 12

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Typical performance SD2942

4 Typical performance
Figure 3: Capacitance vs. drain voltage Figure 4: Drain current vs. gate voltage

Figure 5: Gate-source voltage vs. case temperature

Figure 6: Power gain vs. POUT and case temperature

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SD2942 Typical performance
Figure 7: Efficiency vs. case temperature Figure 8: POUT vs. input power and case temperature

Figure 10: POUT vs. gate voltage and case

Figure 9: POUT vs. input power and drain voltage
temperature

Figure 11: POUT vs. drain voltage and input power

Figure 12: Maximum thermal resist vs. case
temperature

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Typical performance SD2942
Figure 13: Maximum safe operating area

Figure 14: Transient thermal impedance

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SD2942 Typical performance
Figure 15: Transient thermal model

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Test circuit (175 MHz) SD2942

5 Test circuit (175 MHz)

Figure 16: 175 MHz production test circuit schematic

Dimensions at component symbols are references for component placement. Gap

between ground and transmission lines is + 0.002{0.05} - 0.000{0.00} typ.

Table 7: 175 MHz test circuit part list

Component Description
R1, R2, R5, R6 470 Ohm 1 W, surface mount chip resistor
R3, R4 360 Ohm 0.5 W, carbon comp. axial lead resistor or equivalent
R7, R8 560 Ohm 2 W, resistor 2 turn wire air-wound axial lead resistor
R9, R10 20 kOhm 3.09 W, 10 turn wirewound precision potentiometer
C1, C4 680 pF ATC 130B surface mount ceramic chip capacitor
C2, C3, C7, C8,
C17, C19, C20, 10000 pF ATC 200B surface mount ceramic chip capacitor
C21
C5 75 pF ATC 100B surface mount ceramic chip capacitor
C6 ST40 25 pF - 115 pF miniature variable trimmer
C9, C10 47 pF ATC 100B surface mount ceramic chip capacitor
C11, C12, C13 43 pF ATC 100B surface mount ceramic chip capacitor
C14, C15, C24,
1200 pF ATC 700B surface mount ceramic chip capacitor
C25
C16, C18 470 pF ATC 700B surface mount ceramic chip capacitor
C22, C23 0.1 μF / 500 V surface mount ceramic chip capacitor
C26, C27 0.01 μF / 500 V surface mount ceramic chip capacitor
C28 10 μF / 63 aluminum electrolytic axial lead capacitor

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SD2942 Test circuit (175 MHz)
Component Description
50 Ohm RG316 O.D 0.076[1.93] L = 11.80[299.72] flexible coaxial cable 4
B1
turns through ferrite bead
B2 50 Ohm RG-142B O.D 0.165[4.19] L = 11.80[299.72] flexible coaxial cable
R.F. transformer 4:1, 25 Ohm O.D RG316-25 O.D 0.080[2.03]
T1 L = 5.90[149.86] flexible coaxial cable 2 turns through ferrite multi-aperture
core
R.F. transformer 1:4, 25 Ohm semi-rigid coaxial cable O.D. 0.141[3.58]
T2
L = 5.90[149.86]
Inductor λ 1/4 wave 50 Ohm O.D 0.165[4.19] L = 11.80 [299.72] flexible
L1
coaxial cable 2 turns through ferrite bead
FB1, FB5 Shield bead
FB2, FB6 Multi-aperture core
FB3 Multilayer ferrite chip bead (surface mount)
FB4 Surface mount EMI shield bead
Woven glass reinforced PTFE microwave laminate 0.06”, 1 oz EDCu, both
PCB
sides, εr = 2.55

Figure 17: 175 MHz test circuit photomaster

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Test circuit (175 MHz) SD2942
Figure 18: 175 MHz test circuit

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SD2942 Marking, packing and shipping specifications

6 Marking, packing and shipping specifications

Table 8: Packing and shipping specifications
Order code Packing Pieces per tray Dry pack humidity Lot code
SD2942W Tube 15 < 10% Not mixed

Figure 19: SD2942 marking layout

Table 9: Marking specifications

Symbol Description
W Wafer process code
CZ Assembly plant
xxx Last 3 digits of diffusion lot
VY Diffusion plant
MAR Country of origin
CZ Test and finishing plant
y Assembly year
yy Assembly week

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Package information SD2942

7 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.

7.1 M244 package information

Figure 20: M244 (0.400 x .860 4L BAL N/HERM W/FLG) package outline

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SD2942 Package information
Table 10: M244 (0.400 x .860 4L BAL N/HERM W/FLG) package mechanical data
mm
Dim.
Min. Typ. Max.
A 5.59 5.84
B 5.08
C 3.02 3.28
D 9.65 9.91
E 19.81 20.82

F 10.92 11.18
G 27.94

H 33.91 34.16
I 0.10 0.15
J 1.52 1.78
K 2.59 2.84
L 4.83 5.84
M 10.03 10.34
N 21.59 22.10

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Revision history SD2942

8 Revision history
Table 11: Document revision history
Date Revision Changes
18-Oct-2005 1 First issue.
04-Jan-2006 2 Complete version.
14-Apr-2010 3 Added Figure 13, Figure 14 and Figure 15.
Inserted Chapter 7: Marking, packing and shipping
25-Oct-2011 4
specifications.
24-Nov-2016 5 Updated Table 2: "Absolute maximum ratings".

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SD2942

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DocID11736 Rev 5 17/17