STUDENTNO:201737487

MODULE CODE:SPHB032

YEAR :2023

EXPERIMENT 4:transistor characteristics

Abstract :
The aim for this experiment is to study the static characteristic of a transistor
(Common Emitter Configuration).

Introduction:
Transistors are the active component in various devices like amplifiers and
oscillators. They are
called active devices since transistors are capable of amplifying (or making larger)
signals. The proper-
ties of transistors will be studied in this module so basically the focus here is
understanding how transistors work. The next module will focus on basic amplifier
design. Transistors can also be used as switches but since this is not a course in
digital electronics, we will not discuss the function of transistors.

Theory:

A transistor is a semiconductor device used to amplify or switch electronic signals

and electrical power. It is composed of semiconductor material with at least three
terminals for connection to an external circuit. A voltage or current applied to one
pair of the transistor's terminals changes the current through another pair of
terminals. Because the controlled (output) power can be higher than the controlling
(input) power, a transistor can amplify a signal.

Bipolar Junction Transistors

Bipolar Junction Transistors are transistors which are made up of 3 regions, the
base, the collector, and the emitter. A small current entering in the base region of the
transistor causes a much larger current flow from the emitter to the collector region.
Bipolar junction transistors come in two main types, npn and pnp. A npn transistor is
one in which the majority current carrier are electrons. Electron flowing from the
emitter to the collector forms the base of the majority of current flow through the
transistor. The other type of charge,holes, are a minority. pnp transistors are the
opposite. In pnp transistors, the majority current carriers are holes.

Transistor characteristics:
1) Input characteristics

Keeping the collector- emitter (VCE) voltage constant, the base- emitter (VBE) voltage
is increased from 0 and the corresponding base current (IB) values are noted. This is
repeated for increasing values of VCE. The family of curve obtained by plotting IB
against VBE for each VCE value is called input characteristics.

2) Output Characteristics

By keeping the base current (IB) constant, collector- emitter (VCE) voltage is varied
and the corresponding IC values are obtained. This is repeated for increasing values
of IB. The family of curves obtained by plotting IC against VCE for each value of IB is
called output characteristics.
Apparatus :

 Rheostat
 Voltmeter
 Ammeter
 Battery
 One way key
 Transistor
 Bread board

Method :
The following circuit was set up

 the rheostat Rh1 was used to vary base voltage(input voltage) V BE and the
base current (input current) I B was measured using a microammeter(μA).
 The collector voltage (output voltage) V CE was varied using the rheostat Rh2
and readings was noted from voltmeter V 2.
 The collector current(output current) I Cwas measured by the
milliammeter(mA)

INPUT CHARACTERISTICS:

 The collector voltage V CE was kept constant (e.g 1v) by adjusting the rheostat
Rh2.
 The base voltage V BE was varied from zero by adjusting the rheostat Rh1.
 The base current I (B )was recorded in each step.
Output characteristics
 The base current I Bwas kept constant (eg 20μA) by adjusting the rheostat
Rh1.
 The collector voltage was increased by adjusting the rheostat Rh2.
 Corresponding collector current I C was recorded .

Results:
V CE (1V ) V CE (2 V ) V CE (3 V ) V CE (4 V )
1c (m A )=2.2 1c (m A)=2.8 1c (m A)=2.9 1c(m A)=3.0
I B (μA) V BE (V ) I B (μA) V BE (V ) I B (μA) V BE (V ) I B (μA)
V BE (V )
1 0.02 2.06 0.02 2.06 0.02 0.06 0.02 2.06
5 0.10 2.31 0.10 2.31 0.10 2.31 0.10 2.31
10 0.20 2.66 0.20 2.66 0.20 2.66 0.20 2.66
15 0.30 3.07 0.30 3.07 0.30 3.07 0.30 3.07
20 0.40 3.54 0.40 3.54 0.40 3.54 0.40 3.54
25 0.50 4.09 0.50 4.09 0.50 4.09 0.50 4.09
30 0.60 4.71 0.60 4.71 0.60 4.71 0.60 4.71
35 0.70 5.44 0.70 5.44 0.70 5.44 0.70 5.44
40 0.80 6.27 0.80 6.27 0.80 6.27 0.80 6.27
45 0.90 7.23 0.90 7.23 0.90 7.23 0.90 7.23
50 1.00 8.35 1.00 8.35 1.00 8.35 1.00 8.35
55 1.10 9.63 1.10 9.63 1.10 9.63 1.10 9.63
60 1.20 11.11 1.20 11.11 1.20 11.11 1.20 11.11
65 1.30 12.81 1.30 12.81 1.30 12.81 1.30 12.81
70 1.40 14.78 1.40 14.78 1.40 14.78 1.40 14.78
75 1.50 17.05 1.50 17.05 1.50 17.05 1.50 17.05
80 1.60 19.67 1.60 19.67 1.60 19.67 1.60 19.67
85 1.70 22.69 1.70 22.69 1.70 22.69 1.70 22.69
90 1.80 26.17 1.80 26.17 1.80 26.17 1.80 26.17
95 1.90 30.19 1.90 30.19 1.90 30.19 1.90 30.19
100 2.00 34.82 2.00 34.82 2.00 34.82 2.00 34.82
 VBE VS IB FOR 1 V
40

35

30

25

20

15

10

0
0.02 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2

IB

I B (20 μA) I B (40 μA ) I B (60 μA) I B (μA)

V BE=0.49 V BE=0.97 V BE=1.25 V BE=1.46
V CE (V ) I C (m A) V CE (V ) I C (m A) V CE (V ) I C (m A) V CE (V ) I C (m A)
1 0.10 3.3 0.10 25.7 0.10 25.7 0.10 46.9
5 0.50 42.7 0.50 119.3 0.50 217.4 0.50 33.8
10 1.00 70.3 1.00 196.7 1.00 358.4 1.00 550.1
15 1.50 83.6 1.50 233.7 1.50 425.9 1.50 653.8
20 2.00 89.0 2.00 248.9 2.00 453.6 2.00 696.3
25 2.50 91.1 2.50 254.8 2.50 464.2 2.50 712.6
30 3.00 91.9 3.00 257.0 3.00 468.2 3.00 718.7
35 3.50 92.2 3.50 257.8 3.50 469.7 3.50 721.0
40 4.00 92.3 4.00 258.1 4.00 470.2 4.00 721.8
45 4.50 92.3 4.50 258.2 4.50 470.2 4.50 722.1
50 5.00 92.3 5.00 258.2 5.00 470.5 5.00 722.3
55 5.50 92.3 5.50 258.2 5.50 470.5 5.50 722.3
60 6.00 92.3 6.00 258.2 6.00 470.5 6.00 722.3
65 6.50 92.3 6.50 258.2 6.50 470.5 6.50 722.3
70 7.00 92.3 7.00 258.2 7.00 470.5 7.00 722.3
75 7.50 92.3 7.50 258.2 7.50 470.5 7.50 722.3
80 8.00 92.3 8.00 258.2 8.00 470.5 8.00 722.3
85 8.50 92.3 8.50 258.2 8.50 470.5 8.50 722.3
90 9.00 92.3 9.00 258.2 9.00 470.5 9.00 722.3
95 9.50 92.3 9.50 258.2 9.50 470.5 9.50 722.3
10 10.00 92.3 10.00 258.2 10.00 470.5 10.00 722.3
0
 VB VS Ic FOR 20μm
100
90
80
70
60
50
40
30
20
10
0
0.1 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5

VB

Vb vs Ic graph for 40μm

vb versus Ic
300

250

200

150

100

50

0
0.1 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10

vb

Vb versus Ic graph for 60μm

 vb versus Ic graph
500
450
400
350
300
250
200
150
100
50
0
0.1 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10

vb

Vb versus Ic graph for 80 μm

vb versus Ic graph
800

700

600

500

400

300

200

100

0
0.1 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10

vb

V base−V BE
1.utilizing equation I B=
R
Calculate the voltage of the input at 10,50 and 100 ohms.
 V BASE −V BE
a) I B=
R
V BASE −0.20
2.66=
10
V BASE-0.20=(2.66)(10)
V BASE=26.60+0.20
V BASE = 26.80 V
V base −1.00
b) 8.35=
50
V BASE= ( 8.35 ) ( 50 ) +1.00
V BASE=418.50 V

V BASE −2.00
c) 34.82=
100
V BASE= ( 34.82 )( 100 )+2.00
=3484V

2 calculation for the input curve slope

Average V BE = 1.0 V
Average I B= 11.84 µA

IB 11.84 ×10
−6
a) Slope= V = (1 V ) =23.68µA
V BE CE (1 V )
−6
11.84× 10 (
b) Slope= 2 V )=23.68 µA
(1 V )
−6
11.84 × 10 ( )
c) Slope = 3 v =35.52 µA
(1 v )
d) Slope = ( I B /V BE ) V CE
Slope = (11.84 × 10-6A / 1 V)(4V)
Slope = 47.36 µA

3.calcilations for the output voltage

IC
Slope= × V BE
V CE
a) Average V CE = 5.00 V
Average I C = 84.00 mA
V BE = 0.49
I B = 20 µA
Slope = (84.00 × 10-3A / 5.00V)(0.49V)

Slope = 8.23 mA
b) Average V CE =5.00 V
 Average I C =23.57 m A

V BE=0.97V

I B=40µA

Slope = (23.57 × 10-3A / 5.00V)(0.97V)

Slope = 4.57 mA

Type equation here .

c) Average V CE =5.00 V
average I C =428.53
V BE=1.25V
I B=¿60 µA
Slope = (428.53 × 10-3A / 5.00V)(1.25V)
Slope = 0.11 A

d) Average V CE =5.00V
Average I C=623.83m A
V BE=1.46V
I B=80 µA
Slope = (623.83 × 10-3A / 5.00V)(1.46V)
Slope = 0.18 A

4. A logarithm curve in graph 2 indicates that as current increases,

voltage increases, but after a certain time, the graph starts to bend
and become a straight line at a maximum current, which indicates
that the current can no longer sustain an increase, but the voltage
continues to increase, so the transistor has reached equilibrium.
The relationship of the graph does obey the Ohm's Law and is non-linear.

5. Since transistors do not obey Ohm's Law, their linear curves

form nonlinear curves. Therefore, they can be represented by a
circuit with linear components.

6. Despite the voltage increasing, the current remains constant or

fixed, so it is sensitive to input current.

DISCUSSION

It can be seen from the results obtained that the transistor does not obey Ohm's Law
in electrical circuits. As a result of the non-linear relationship between current and
voltage arising from the transistor, we concluded that transistor devices do not follow
Ohm's Law. According to Ohm's Law, current and voltage are directly related if the
resistance is kept constant, which is usually the case at room temperature. The
slopes of the graphs were found to be (11.84, 23.68, 35.52, and 47.36 µA). The base
voltages were found to be (26.80, 418.50, and 3484 V).

CONCLUSION:

The base current Ib increases with the increases in the emitter-base voltage Vbe.
The input characteristic resembles a forward biased diode curve while the change in
collector emitter voltage causes small change in the collector
current for the constant base current, which defines the dynamic resistance and is
given as ΔVCE /ΔIC at constant IB. and the transistor they do not obey ohm’s
law.hence the experiment is successful
ACKNOWLEDGEMENT:

I would like to say a special thanks to all SPHA 032 lab assistance and my group
members by helping me to construct the experiment on , and also the website and
books that I used as reference to accomplish my Lab report.

References:
1. M. Cutler, Forward characteristics of germanium point contact rectifiers, J. Appl.
Phys. 26, 949-954 (1955).
2. J. S. Schaffner and R. F. Shea, Variation of the forward characteristics of junction
diodes with temperature, Proc. IRE 43, 101 (1955).
3. K. Lehovec, A. Marcus, and K. Schoeni, Current-voltage characteristics and hole
injection factor of point contact rectifiers in the forward direction, Trans. IRE, vol. ED-
3, no. 1, pp. 1-6 (1956).
4. B.E Warren, elements of Modern physics of electronics, 2nd E.D pp 39-45, 1993.
5. W. Shockley, Electrons and Holes in Semiconductors (D. Van Nostrand Company,
Inc., New York, 1950), p. 90. 6. JONSCHER, A. K. ( 2007). Measurement of Voltage-
Current Characteristics of Junction Diodes at High Forward Bias. Journal of
Electronics and Control, 226-244