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 FCPF190N65FL1 — N-Channel SuperFET® II FRFET® MOSFET
December 2014

FCPF190N65FL1
N-Channel SuperFET® II FRFET® MOSFET
650 V, 20.6 A, 190 mΩ
Features Description
• 700 V @TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
• RDS(on) = 168 mΩ (Typ.)
charge balance technology for outstanding low on-resistance
• Ultra Low Gate Charge (Typ. Qg = 60 nC) and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching
• Low Effective Output Capacitance (Typ. Coss(eff.) = 304 pF)
performance, dv/dt rate and higher avalanche energy.
• 100% Avalanche Tested Consequently, SuperFET II MOSFET is very suitable for the
switching power applications such as PFC, server/telecom
• RoHS Compliant
power, FPD TV power, ATX power and industrial power
Applications applications. SuperFET II FRFET® MOSFET’s optimized body
diode reverse recovery performance can remove additional
• LCD / LED / PDP TV • Telecom / Server Power Supplies component and improve system reliability.

• Solar Inverter • AC - DC Power Supply

G
G
D
S TO-220F

Absolute Maximum Ratings TC = 25oC unless otherwise noted.

Symbol Parameter FCPF190N65FL1 Unit
VDSS Drain to Source Voltage 650 V
- DC ±20
VGSS Gate to Source Voltage V
- AC (f > 1 Hz) ±30
- Continuous (TC = 25oC) 20.6
ID Drain Current A
- Continuous (TC = 100oC) 13.1
IDM Drain Current - Pulsed (Note 1) 61.8 A
EAS Single Pulsed Avalanche Energy (Note 2) 400 mJ
IAR Avalanche Current (Note 1) 4 A
EAR Repetitive Avalanche Energy (Note 1) 0.39 mJ
MOSFET dv/dt 100
dv/dt V/ns
Peak Diode Recovery dv/dt (Note 3) 50
(TC = 25oC) 39 W
PD Power Dissipation
- Derate Above 25oC 0.31 W/oC
o
TJ, TSTG Operating and Storage Temperature Range -55 to +150 C
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds o
TL 300 C

Thermal Characteristics
Symbol Parameter FCPF190N65FL1 Unit
RθJC Thermal Resistance, Junction to Case, Max. 3.2 o
C/W
RθJA Thermal Resistance, Junction to Ambient, Max. 62.5

©2014 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FCPF190N65FL1 Rev. C1
 FCPF190N65FL1 — N-Channel SuperFET® II FRFET® MOSFET
Package Marking and Ordering Information
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FCPF190N65FL1 FCPF190N65F TO-220F Tube N/A N/A 50 units

Electrical Characteristics TC = 25oC unless otherwise noted.

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Off Characteristics
VGS = 0 V, ID = 10 mA, TJ = 25°C 650 - - V
BVDSS Drain to Source Breakdown Voltage
VGS = 0 V, ID = 10 mA, TJ = 150°C 700 - - V
ΔBVDSS Breakdown Voltage Temperature
ID = 10 mA, Referenced to 25oC - 0.72 - V/oC
/ ΔTJ Coefficient
VDS = 650 V, VGS = 0 V - - 10
IDSS Zero Gate Voltage Drain Current μA
VDS = 520 V, VGS = 0 V,TC = 125oC - 60 -
IGSS Gate to Body Leakage Current VGS = ±20 V, VDS = 0 V - - ±100 μA

On Characteristics
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 2 mA 3 - 5 V
RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 10 A - 168 190 mΩ
gFS Forward Transconductance VDS = 20 V, ID = 10 A - 18 - S

Dynamic Characteristics
Ciss Input Capacitance - 2350 3055 pF
VDS = 100 V, VGS = 0 V,
Coss Output Capacitance - 77 100 pF
f = 1 MHz
Crss Reverse Transfer Capacitance - 0.68 - pF
Coss Output Capacitance VDS = 380 V, VGS = 0 V, f = 1 MHz - 44 - pF
Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V - 304 - pF
Qg(tot) Total Gate Charge at 10V VDS = 380 V, ID = 10 A, - 60 78 nC
Qgs Gate to Source Gate Charge VGS = 10 V - 12 - nC
Qgd Gate to Drain “Miller” Charge (Note 4) - 25 - nC
ESR Equivalent Series Resistance f = 1 MHz - 0.6 - Ω

Switching Characteristics
td(on) Turn-On Delay Time - 25 60 ns
tr Turn-On Rise Time VDD = 380 V, ID = 10 A, - 11 32 ns
td(off) Turn-Off Delay Time VGS = 10 V, Rg = 4.7 Ω - 62 134 ns
tf Turn-Off Fall Time (Note 4) - 4.2 18 ns

Drain-Source Diode Characteristics

IS Maximum Continuous Drain to Source Diode Forward Current - - 20.6 A
ISM Maximum Pulsed Drain to Source Diode Forward Current - - 61.8 A
VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 10 A - - 1.2 V
trr Reverse Recovery Time VGS = 0 V, ISD = 10 A, - 105 - ns
Qrr Reverse Recovery Charge dIF/dt = 100 A/μs - 515 - nC
Notes:
1. Repetitive rating: pulse width limited by maximum junction temperature.
2. IAS = 4 A, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 10 A, di/dt ≤ 200 A/μs, VDD ≤ 380 V, Starting TJ = 25°C
4. Essentially independent of operating temperature.

©2014 Fairchild Semiconductor Corporation www.fairchildsemi.com

2
FCPF190N65FL1 Rev. C1
 FCPF190N65FL1 — N-Channel SuperFET® II FRFET® MOSFET
Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

100 100
VGS = 15.0V *Notes:
10.0V 1. VDS = 20V
8.0V 2. 250μs Pulse Test
7.0V
6.5V
ID, Drain Current[A]

ID, Drain Current[A]

6.0V o
5.5V 150 C

10 10
o
25 C

o
-55 C
*Notes:
1. 250μs Pulse Test
o
2. TC = 25 C
1 1
0.3 1 10 15 3 4 5 6 7 8
VDS, Drain-Source Voltage[V] VGS, Gate-Source Voltage[V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
0.3 100
Drain-Source On-Resistance

IS, Reverse Drain Current [A]

o
150 C
0.2 10
VGS = 10V
RDS(ON) [Ω],

o
25 C

VGS = 20V

0.1 1

*Notes:
1. VGS = 0V
o
*Note: TC = 25 C 2. 250μs Pulse Test
0.0 0.1
0 14 28 42 56 70 0.0 0.5 1.0 1.5 2.0
ID, Drain Current [A] VSD, Body Diode Forward Voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

50000 10

10000 VDS = 130V

VGS, Gate-Source Voltage [V]

Ciss VDS = 325V

8
VDS = 520V
1000
Capacitances [pF]

Coss 6
100

*Note: 4
10 1. VGS = 0V
Crss
2. f = 1MHz
1 Ciss = Cgs + Cgd (Cds = shorted) 2
Coss = Cds + Cgd
Crss = Cgd
*Note: ID = 10A
0.1 0
0.1 1 10 100 1000 0 13 26 39 52 65
VDS, Drain-Source Voltage [V] Qg, Total Gate Charge [nC]

©2014 Fairchild Semiconductor Corporation www.fairchildsemi.com

3
FCPF190N65FL1 Rev. C1
 FCPF190N65FL1 — N-Channel SuperFET® II FRFET® MOSFET
Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature
1.2 2.5
Drain-Source Breakdown Voltage

Drain-Source On-Resistance
1.1 2.0

RDS(on), [Normalized]
BVDSS, [Normalized]

1.0 1.5

0.9 1.0
*Notes: *Notes:
1. VGS = 0V 1. VGS = 10V
2. ID = 10mA 2. ID = 10A
0.8 0.5
-75 -50 -25 0 25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
200 25
100 10μs o
Rθ JC = 3.2 C/W

20
ID, Drain Current [A]

100μs
I D, Drain Current [A]

10
1ms
15
10ms
1
Operation in This Area 10
is Limited by R DS(on)
DC
*Notes:
0.1 o
1. TC = 25 C 5
o
2. TJ = 150 C
3. Single Pulse
0.01 0
0.1 1 10 100 1000 25 50 75 100 125 150
o
VDS, Drain-Source Voltage [V] TC, Case Temperature [ C]

Figure 11. Eoss vs. Drain to Source Voltage

13.0

10.4
EOSS, [μJ]

7.8

5.2

2.6

0
0 132 264 396 528 660
VDS, Drain to Source Voltage [V]

©2014 Fairchild Semiconductor Corporation www.fairchildsemi.com

4
FCPF190N65FL1 Rev. C1
 FCPF190N65FL1 — N-Channel SuperFET® II FRFET® MOSFET
Typical Performance Characteristics (Continued)

Figure 12. Transient Thermal Response Curve

0.5
Thermal Response [ZθJC] 1
0.2
0.1
0.05
0.1 PDM
0.02
0.01 t1
t2
*Notes:
0.01 o
Single pulse 1. ZθJC(t) = 3.2 C/W Max.
2. Duty Factor, D = t1/t2
3. TJM - TC = PDM * ZθJC(t)
1E-3
-5 -4 -3 -2 -1
10 10 10 10 10 1 10
Rectangular Pulse Duration [sec]

©2014 Fairchild Semiconductor Corporation

5 www.fairchildsemi.com
FCPF190N65FL1 Rev. C1
 FCPF190N65FL1 — N-Channel SuperFET® II FRFET® MOSFET
IG = const.

Figure 13. Gate Charge Test Circuit & Waveform

RL VDS
VDS 90%

VGS VDD
RG

10%
VGS
V
10V DUT
GS
td(on) tr td(off)
tf
t on t off

Figure 14. Resistive Switching Test Circuit & Waveforms

VGS

Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms

©2014 Fairchild Semiconductor Corporation www.fairchildsemi.com

6
FCPF190N65FL1 Rev. C1
 FCPF190N65FL1 — N-Channel SuperFET® II FRFET® MOSFET
DUT +

VDS

I SD
L

Driver
RG
Same Type
as DUT VDD

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

Gate Pulse Width

VGS D = --------------------------
Gate Pulse Period 10V
( Driver )

IFM , Body Diode Forward Current

I SD
( DUT ) di/dt

IRM

Body Diode Reverse Current

VDS
( DUT ) Body Diode Recovery dv/dt

VSD VDD

Body Diode
Forward Voltage Drop

Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms

©2014 Fairchild Semiconductor Corporation www.fairchildsemi.com

7
FCPF190N65FL1 Rev. C1
 FCPF190N65FL1 — N-Channel SuperFET® II FRFET® MOSFET
Mechanical Dimensions

Figure 17. TO220, Molded, 3LD, Full Pack, EIAJ SC91, Takcheong
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-0A3

©2014 Fairchild Semiconductor Corporation www.fairchildsemi.com

8
FCPF190N65FL1 Rev. C1
 FCPF190N65FL1 — N-Channel SuperFET® II FRFET® MOSFET
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.

AccuPower™ F-PFS™ OPTOPLANAR® ®*

AttitudeEngine™ FRFET®
®
Awinda® Global Power ResourceSM
TinyBoost®
tm

AX-CAP®* GreenBridge™ PowerTrench® ®

TinyBuck
BitSiC™ Green FPS™ PowerXS™
TinyCalc™
Build it Now™ Green FPS™ e-Series™ Programmable Active Droop™
TinyLogic®
CorePLUS™ Gmax™ QFET®
TINYOPTO™
CorePOWER™ GTO™ QS™
TinyPower™
CROSSVOLT™ IntelliMAX™ Quiet Series™
TinyPWM™
CTL™ ISOPLANAR™ RapidConfigure™
TinyWire™
Current Transfer Logic™ Marking Small Speakers Sound Louder ™ TranSiC™
DEUXPEED® and Better™
TriFault Detect™
Dual Cool™ MegaBuck™ Saving our world, 1mW/W/kW at a time™
TRUECURRENT®*
EcoSPARK® MICROCOUPLER™ SignalWise™
μSerDes™
EfficentMax™ MicroFET™ SmartMax™
ESBC™ MicroPak™ SMART START™
® MicroPak2™ Solutions for Your Success™
MillerDrive™ SPM® UHC®
Fairchild® MotionMax™ STEALTH™ Ultra FRFET™
Fairchild Semiconductor® MotionGrid® SuperFET® UniFET™
FACT Quiet Series™ MTi® SuperSOT™-3 VCX™
FACT® MTx® SuperSOT™-6 VisualMax™
FAST® MVN® SuperSOT™-8 VoltagePlus™
FastvCore™ mWSaver® SupreMOS® XS™
FETBench™ OptoHiT™ SyncFET™ Xsens™
FPS™ OPTOLOGIC® Sync-Lock™ 仙童 ™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. TO OBTAIN THE LATEST, MOST UP-TO-DATE DATASHEET AND PRODUCT INFORMATION, VISIT OUR
WEBSITE AT HTTP://WWW.FAIRCHILDSEMI.COM. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF
ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF
OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE
WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are 2. A critical component in any component of a life support, device, or
intended for surgical implant into the body or (b) support or sustain life, system whose failure to perform can be reasonably expected to cause
and (c) whose failure to perform when properly used in accordance with the failure of the life support device or system, or to affect its safety or
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ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
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proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
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PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification Product Status Definition
Datasheet contains the design specifications for product development. Specifications
Advance Information Formative / In Design may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later

Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

No Identification Needed Full Production make changes at any time without notice to improve the design.

Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I73
©2014 Fairchild Semiconductor Corporation 9 www.fairchildsemi.com
FCPF190N65FL1 Rev. C1
 A 10.30
9.80 2.90
3.40 2.50
3.00

6.60
6.20
3.00
2.60
19.00 1 X 45°
B 15.70
17.70 B
15.00

3.30
2.70 B

1 3

2.70
2.14
1.20 2.30
0.90 (2X)
10.70
10.30

0.60
0.90 B
(3X) 0.40
1.20 0.50
1.00 0.50 M A
2.74 NOTES:
(2X)
2.34 A. EXCEPT WHERE NOTED CONFORMS TO
EIAJ SC91A.
B DOES NOT COMPLY EIAJ STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
4.60 MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ASME
4.30 Y14.5-2009.
F. DRAWING FILE NAME: TO220V03REV1
G. FAIRCHILD SEMICONDUCTOR
 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.

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