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Chapter: Electronic Circuits : Biasing of Discrete BJT and MOSFET

Diode and Thermistor Compensation technique

It refers to the use of temperature sensitive devices such as diodes, transistors, thermistors which provide compensating
voltage and current to maintain Q point stable.

Compensation technique:

It refers to the use of temperature sensitive devices such as diodes, transistors, thermistors which
provide compensating voltage and current to maintain Q point stable.

1. Diode Compensation Techniques

Compensation for VBE:

a) Diode in Emitter Circuit

Diagram shows the voltage divider bias with bias compensation technique.Here, separate supply
VDD is used to keep diode in forward If biased condition. If the diode used in the circuit is of
same material and type as the transistor, the voltage across the diode will have the same
temperature coefficient as the base to emitter voltage VBE . So when VBE changes by ∂ VBE with
change in temperature, VD changes by VD and ∂ VD~=~∂ VBE, the changes tend to cancel each
other. Apply*g KVL to the base circuit of Fig. ,we have
Figure: Stabilization by means of voltage divider bias and diode Compensation Technique

As VD tracks VBE with respect to temperature it is clear that IC will be insensitive to variations
in VBE .

Diode in voltage divider circuit

Diode is connected in series with resistance R2 in the voltage divider circuit and it is forward
biased condition.

For voltage divider bias,

When VBE changes with temperature, IC also changes

To cancel the changes in IC , one diode is used in the circuit for compensation

The voltage at the base VB is give as

Substituting this value in equation IC, we get,

The changes cancel each other , so the collector current is given as

The changes in VBE. Due to temperature are compensated by changes in the diode voltage which
keeps IC stable at Q point.
Compensation for ICO

* In germanium transistor changes in ICO with temperature plays an important role collector
current stability

* The diode is kept at reverse bias condition ,so only leakage current flows

* Io increases then ICO also increases

As I is constant , IC also remains constant. We can say that changes by ICO with temperature are
compensated by diode and collector current remains constant

2. Thermistor Compensation

With increase of temperature ,RT decreases. Hence the voltage drop across it also decreases. That
is VBE decreases which reduces IB .this will offset the increased collector current with
temperature.

The equation shows if there is increase in ICO and decrease in IB keeps IC almost constant.

Fig (b) shows another thermistor compensation technique . Here, thermistor is connected between
emitter and Vcc to minimize the increase in collector current due to changes in ICO, VBE, or beta
with temperature .IC increases with temperature and RT decreases with increase in temperature.
Therefore, current flowing through RE increases, which increases the voltage drop across it. E - B
junction is forward biased. But due to increase in voltage drop across RE, emitter is made more
positive, which reduces the forward bias voltage VBE. Hence, bias current reduces.

As Ico increases with temperature, IB decreases and hence. IC remains constant

Sensistor Compensation technique

This method of transistor compensation uses temperature sensitive resistive element, sensistors
rather than diodes or transistors. It has a positive temperature coefficient, its resistance increases
exponentially with increasing temperature as shown in the Fig

Slope of this curve =

is the temperature coefficient for thermistor and the slope is positive So we can say that

sensistor has positive temperature coefficient of resistance (PTC).

Fig. shows sensistor compensation R1 is replaced by sensistor RT in self bias circuit. Now, RT and
R2 resistors of the potential divider. As temperature increases, RT increases which decreases the
current flowing through it. Hence current through R2 decreases which reduces the voltages drop
across it. Voltage drop across R2 is the voltage between base and ground. So VBE reduces which
decreases 16. It means, when ICBO increases with increase in temperature, IB reduces due to
reduction in VBE, maintaining IC fairly constant.

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Electronic Circuits : Biasing of Discrete BJT and MOSFET

Biasing of Discrete BJT and MOSFET (https://www.brainkart.com/article/Biasing-of-Discrete-BJT-and-

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Voltage divider bias circuit (https://www.brainkart.com/article/Voltage-divider-bias-circuit_13234/)

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