DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING

SYLLABUS
EC3353 ELECTRONIC DEVICES AND CIRCUITS LTPC
3 00 3
UNIT I SEMICONDUCTOR DEVICES

PN junction diode, Zener diode, BJT, MOSFET, UJT –structure, operation and V-I
characteristics, diffusion and transition capacitance - Rectifiers – Half Wave and Full Wave
Rectifier, Zener as regulator.

UNIT II AMPLIFIERS 9

Load line, operating point, biasing methods for BJT and MOSFET, BJT small signal model –
Analysis of CE, CB, CC amplifiers- Gain and frequency response –MOSFET small signal
model– Analysis of CS, CG and Source follower – Gain and frequency response- High frequency
analysis.

UNIT III MULTISTAGE AMPLIFIERS AND DIFFERENTIAL AMPLIFIER 9

Cascode amplifier, Differential amplifier – Common mode and Difference mode analysis –
MOSFET input stages – tuned amplifiers – Gain and frequency response – Neutralization
methods.

UNIT IV FEEDBACK AMPLIFIERS AND OSCILLATORS 9

Advantages of negative feedback – Voltage / Current, Series , Shunt feedback Amplifiers –

Positive feedback–Condition for oscillations, phase shift – Wien bridge, Hartley, Colpitts and
Crystal oscillators.

UNIT V POWER AMPLIFIERS AND DC/DC CONVERTERS 9

Power amplifiers- class A-Class B-Class AB-Class C-Power MOSFET-Temperature Effect-

Class AB Power amplifier using MOSFET –DC/DC convertors – Buck, Boost, Buck-Boost
analysis and design.

45 PERIODS
PRACTICAL EXERCISES: 30 PERIODS
TEXT BOOKS:

1.
David A. Bell, "Electronic Devices and Circuits", Oxford Higher Education press, 5th
Edition, 2010.
2. Robert L. Boylestad and Louis Nasheresky, “Electronic Devices and Circuit
Theory”, 10th Edition,pearson Education/PHI,2008
3. Adel .S. Sedra, Kenneth C. Smith, "Micro Electronic Circuits", Oxford University
Press,7th Edition, 2014

REFERENCES

1. Donald.A. Neamen, "Electronic Circuit Analysis and Design", Tata McGraw Hill,
3rd Edition, 2010.
2. D.Schilling and C.Belove, "Electronic Circuits", McGraw Hill, 3 rd Edition, 1989
3. Muhammad H.Rashid, "Power Electronics", Pearson Education / PHI , 2004.
 DEPARTMENT OF ELECTRONICS & COMMUNICATION
ENGINEERING
ACADEMIC YEAR 2023-24(ODD SEM)

INTERNAL ASSESSMENT TEST-II

EC3353-ELECTRONICS DEVICES AND CIRCUITS

Year / SEM : II / III –A&B Session : F.N

Time : 1 ½ Hours Max Marks : 50

PART A (5×02=10MARKS)
Sl.NO Questions Blooms CO
1. What is BIMOS amplifier? R 3

2. An amplifier has an open loop gain of 1000 and a feedback ratio of 0.04. If the Ap 3
open loop gain changes by 10% due to temperature, find the percentage of
change in gain of the amplifier with feedback.
3. What is the effect of voltage shunt feedback on input resistance and output U 3
resistance?
4. Give the two Barkhausen Conditions required for sinusoidal oscillation to be R 4
sustained.
5. In a RC phase shift oscillator, RI = R * 2 = R * 3 = 1M*Omega and C1-C2- E 4
C3-68 PF. At what circuit oscillate?

PART B (4×10=40MARKS)
a.Explain with neat diagram, the working of Hartley oscillator using transistor.
R 4
Derive an expression for frequency of oscillation. (10)
6.
OR
b. Draw the circuit of Colpitts oscillator and explain its working. Derive the
R 4
frequency of oscillation and condition for starting of oscillatio
a. With a neat block diagram, explain the operation of following feedback
amplifiers.
R 3
(i) Voltage series feedback amplifier (5)
7. (ii) Current shunt feedback amplifier (5)
OR
b. Obtain the expression for frequency of oscillation of Wien bridge Oscillator
R, U 3
circuit. (10)
 8. a. Explain the general characteristics of a negative feedback amplifier. Which
represents the Trans-resistance and Trans-conductance feedback connection R 4
diagrammatically. (10)

OR
b. Write short notes on Crystal Oscillator. (10) Ap 4
a. (i) A voltage-series negative feedback amplifier has a voltage gain without
feedback of Av = 500 input resistance Ri = 3k*Omega output resistance and
feedback ratio f = 0.01 calculate voltage gain Avf, Rif and output Rof of the
amplifier with feedback. (6) 3
(ii) In a Hartley Oscillator, the value of the capacitor in the tuned circuit is
9.
500PF and the two sections of the coil have inductances 38 µH and 12 µH. find
the frequency of oscillations and the feedback factor B. (4)
OR
a.Explain the principle of operation of the RC phase shift oscillator
U 3
with necessary diagram. (10)

R- Remembering, U- Understanding, Ap- Applying, A- Analyzing, E- Evaluating, C- Creating

Course Incharge HOD Principal

 DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING
ACADEMIC YEAR 2023-24 (ODD SEM)

INTERNAL ASSESSMENT TEST-I

EC3353 ELECTRONICS DEVICES AND CIRCUITS

Year / SEM : II/ III –A&B Session : F.N

Time : 1 ½ Hours Max Marks : 50

PART A (5×02=10MARKS)
Sl.NO Questions Blooms CO
1. What are the conditions to be satisfied to get good amplification in a R 1
Transistor amplifier?
2. Why common drain amplifier is called as source follower? Write the A 1
properties of common source follower?
3. Find the Q-factor value of tuned circuit with a resonant frequency of 1600KHz E 2
and bandwidth of 10KHz?
4. Define: CMRR and list out the features of differential amplifier? R 2
5. Define: resonant frequency and selectivity? R 2

PART B (4×10=40MARKS)
a. Give the MOSFET small signal model for common source amplifier and find
U 1
voltage gain, input and output impedance.
6.
OR
b. Analyze the small signal model for source follower amplifier. U 1
a.Derive the necessary expressions for gain and high frequency response of a
U 2
BJT amplifier.
7.
OR
b. What is differential amplifier and explain its two modes of operations. R 2
a. Explain the DC and AC analysis of differential amplifier. R 1
8. OR
b. What are tuned amplifiers? Describe in detail about single tuned and double
R 1
tuned amplifiers.
a. What is the need for neutralization? Explain any three methods of it R 2
OR
9.
b. What are tuned amplifiers? Describe in detail about single tuned and
E 2
double tuned amplifiers.

R- Remembering, U- Understanding, Ap- Applying, A- Analyzing, E- Evaluating, C- Creating

Course Incharge HOD Principal

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DEPARTMENT OF ELECTRONICS AND COMMUNICATION

ENGINEERING
VISION:

To emerge as a Centre of Academic Excellence in Electronics and Communication

Engineering that imparts quality technical Education, Research impetus, Professional and
Ethical values to meet global needs of Industry and Society.

MISSION:

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