SRM VALLIAMMAI ENGINEERING COLLEGE

(An Autonomous Institution)

SRM Nagar, Kattankulathur – 603 203.

DEPARTMENT OF ELECTRICAL AND ELECTRONICS ENGINEERING

LAB MANUAL

1906304 – ELECTRONIC DEVICES AND CIRCUITS LAB

(Regulation 2019)

II –YEAR / III-SEMESTER ECE

ACADEMIC YEAR: 2022-23 (ODD)

Prepared by,

Ms.R.V.PREETHA, A.P (O.G)

Mr.P.TAMIL ARASAN, A.P (O.G)
Mr.S.VENKATESH, A.P (O.G)
 SYLLABUS

1906304 ELECTRONIC DEVICES AND CIRCUITS LABORATORY L T P C

0 0 4 2
OBJECTIVES:
The student should be made to:
 To gain hand on experience in basic circuit theorems.
 To learn the characteristics of basic electronic devices such as Diode, BJT, FET,
SCR.
 To understand the operation of clipper and clamper & rectifier.
 To analyze the characteristics of an amplifiers.
 Simulate diode characteristics and rectifiers.

LIST OF EXPERIMENTS

1. Verification of Thevenin’s & Norton’s theorem.

2. Verification of KVL & KCL.
3. Verification of Superposition Theorem.
4. Verification of maximum power transfer & reciprocity theorem.
5. Analyse the Characteristics and application of PN Junction Diode.
6. Analyse the Characteristics of Zener diode & design a Regulator using Zener diode.
7. Common Emitter input-output Characteristics.
8. Common Base input-output Characteristics.
9. Analysis of FET Characteristics.
10. Analysis of SCR Characteristics.
11. Design and test Clipper and Clamper & FWR.
12. Simulation of diode characteristics and Rectifiers using PSPICE.
TOTAL PERIODS:60
OUTCOMES:
On completion of this lab course, the student would be able to,
 Develop the capacity to apply circuit theorems in real time.
 Analyse the characteristics of basic electronic devices such as Diode, BJT, FET,
SCR.
 Perform experiment to analyse input-output characteristics of CE and CB amplifiers.
 Test the performance of clipper and clamper & FWR.
 Simulate and analyse diode characteristics and rectifiers using SPICE.
 LIST OF EXPERIMENTS
CYCLE I

1. Verification of Thevenin’s & Norton’s theorem.

2. Verification of KVL & KCL.
3. Verification of Superposition Theorem.
4. Verification of maximum power transfer & reciprocity theorem.
5. Analyse the Characteristics and application of PN Junction Diode.
6. Analyse the Characteristics of Zener diode & design a Regulator using Zener
diode.
CYCLE II
7. Common Emitter input-output Characteristics.
8. Common Base input-output Characteristics.
9. Analysis of FET Characteristics.
10. Analysis of SCR Characteristics.
11. Design and test Clipper and Clamper & FWR.
12. Simulation of diode characteristics and Rectifiers using PSPICE.

ADDITIONAL EXPERIMENTS
13. Characteristics of Uni-Junction Transistor
14. Frequency Response Of Series And Parallel Resonance Circuits

1
2
Ex.No:1

VERIFICATION OF THEVENIN’S & NORTON’STHEOREM

Preparatory Questions

1. How Rth is obtained in any circuit for applying Thevenin’s and Norton’s theorem?
2. What is Vth or Thevenin’s voltage?
3. How Vth is obtained in any circuit for applying Thevenin’s theorem?
4. What is IN or Norton’s current?
5. How IN is obtained?

AIM:
a. To verify the Thevenin’s theorem for the given electric circuit.
b. To verify the Norton’s theorem for the given circuit.

THEVENIN’S THEOREM
STATEMENT:

A one port linear, active, resistive network which contains one or more voltage or
current sources can be replaced by a single voltage source Vth in series with a single
resistance Rth.Vth is equal to the open circuit voltage across the port terminals of the network
& the resistance Rth is measured between the port terminals with all the energy sources
replaced by their internal resistance.
Rth
A A
COMPLEX
ACTIVE  Vth
NETWORK
B

Where, B

Rth-Thevenin’s resistance, Vth -Thevenin’s voltage.

APPARATUS REQUIRED:

S.No Name Range Qty

1 RPS (regulated power (0-30) V 2
supply)
2 Ammeter 0-10 mA 1
3 Voltmeter 0 – 25V 2
4 Resistors 1K Ω, 330Ω Each 2
5 Breadboard 1
6 Connecting wires Required

3
PROCEDURE:

1. Connections are given as per the circuit diagram.

2. Set a particular value of voltage using RPS and note down the corresponding
ammeter readings.
To Find Vth:
3. Remove the load resistance and measure the open circuit voltage using multimeter
(VTh).
To Find Rth:
4. To find the Thevenin’s resistance, remove the RPS and short circuit it and find the
RTh using multimeter.
5. Give the connections for equivalent circuit and set VTH and RTH and note the
corresponding ammeter reading.
6. Verify Thevenins theorem.
To Find IL:
7. Vary the RPS to the particular voltage and note down the ammeter reading (IL).

CIRCUIT DIAGRAM: I

To find load current (IL)

To find Vth:

4
To find Rth:

Thevenin’s Equivalent circuit:

Vth
IL = -----------
RTH + RL

TABULATION:

Specified voltage Theoritical Practical

S.No Vth Rth IL Vth Rth IL
E (Volts)

5
B. NORTON’S THEOREM

STATEMENT:
A one port linear, active, resistive network which contains one or more voltage or
current sources can be replaced by a single current source ISC in parallel with a single
resistance Rth. Isc is equal to the short circuit current across the port terminals of the network
& the resistance Rth is measured between the port terminals with all the energy sources
replaced by their internal resistance.

Linear A
Active Rth RL
Network B Isc

Where,
ISC – Short circuit current at terminals A & B
Rth– Thevenin’s equivalent Resistance.

APPARATUS REQUIRED:

S.No Name Range Qty

1 RPS (regulated power supply) (0-30) V 1
2 Ammeter 0 – 50mA 2
3 Voltmeter 0-25 V 2
4 Resistors 1K Ω, 2.2K Ω,4.7K Ω,6.8K Ω Each 2
5 Breadboard 1
6 Connecting wires Required
PROCEDURE:
1. To find ISC(short circuit the load resistance)
a) Connections are made as per the circuit diagram.
b) Note down the ammeter reading (ISC)
2. To find Rth (short circuit the voltage source)
a) Connections are made as per the circuit diagrams
b) Supply is switched ‘ON’
c) Vary the RPS to the specified voltage, note down the ammeter and
voltmeter readings.
d) Repeat the step 3 for various R.P.S voltage and the readings are
tabulated.
e) Calculate the RTh using the tabulation.
3. To Find IL
a) Connections are given as per the circuit diagram.
b) Switch ON the power supply.
c) Vary the R.P.S. to the specified voltage and note down the ammeter
reading (IL).

6
 CIRCUIT DIAGRAM:

2.2 KΩ R1 R3 1KΩ

+
V (0-30v) R2 RL
- 2.2KΩ
1KΩ

Theoretical Verification:

To Find ISC:
R1 R3

RPS
(0-30V) +
_ R2

I1 I2

ISC = I2 = 2 / 

To Find RTH:

R1 R3

R2
RTH:

RTH= (R1.R2) + R3
R1+R2

7
 To Find Isc:
R1 R3

RPS
(0-30V) + +
_ R2
Isc (0 – 5 mA)
I1 I2
-

To Find IL:

RTH
ISC RTH RL IL = ISC ---------
RL + RTH

To Find IL:

2.2 KΩ R1 R3 1KΩ

+ IL
A (0-5 mA)
+ -
V (0-30V) R2 RL
- 2.2KΩ
1KΩ

TABULATION:

Specified voltage Theoritical Practical

S.No Isc Rth IL Isc Rth IL
(Volts)

8
Review Questions:

1. State Thevenin’s&Norton’s theorem.

2. Draw the Thevenin’s& Norton’s equivalent circuit for

3. What is duality theorem?

4. Explain dependent sources and sources transformation.
5. Explain Star-Delta conversion

RESULT:

Thus the Thevenin’s & Norton’s theorems are verified

9
10
Ex.No.2

VERIFICATION OF KIRCHOFFS CURRENT LAW AND

KIRCHOFF’S VOLTAGE LAW.

Preparatory Questions:

1. State KCL and KVL.

2. What is meant by short circuit and open circuit?
3. Two resistances with the value of R1, R2 are connected in i) series and ii) parallel. What
is the equivalent resistance?
4. Two inductors with the value of L1, L2 are connected in i) series and ii) parallel. What
is the equivalent inductance?
5. Two capacitors with the value of C1, C2 are connected in i) series and ii) parallel. What
is the equivalent capacitance?

AIM:

(a) To verify the Kirchoff’s current law.

(b) To verify the Kirchoff’svoltage law.

STATEMENT:
Kirchhoff’s Current Law:

The algebraic sum of all the currents at any junction in an electric circuit is zero. In
other words, the sum of the current flowing towards a junction is equal to the sum of the
currents flowing away from it.

Kirchhoff’s Voltage Law:

In any closed circuit, the algebraic sum of all the electromotive forces and the potential
drops is equal to zero. In other words, for any closed path in a network, the algebraic sum of
voltages is zero.
(i.e) sum of voltage drops = sum of voltage rises.

APPARATUS REQUIRED:

S.No Name Specification Qty

1 RPS (Regulated Power Supply) (0-30)V 1
2 Ammeter (0–30)mA 3
3 Voltmeter (0–30)V 3
4 Resistors 330Ω, 220Ω, 1KΩ, Each 1
5 Bread Board 1
6 Connecting wires Required

11
PROCEDURE (Both KCL & KVL)

1. Connections are made as per the circuit diagram.

2. Switch on the power supply.
3. Vary the R.P.S to a specified voltage and note down the corresponding ammeter
and voltmeter readings.
4. Repeat the step 3 for various R.P.S voltage and tabulate the readings.
5. Switch off the power supply and remove the connections.

Model circuit of KVL:

TABULATION:

RPS (V) Voltage (V) E2=V2+V3(Volts)

S.No E1=V1+V2(Volts)
E1 E2 V1 V2 V3

Model Circuit of KCL:

12
TABULATION:

S.No Vs(volts) I1(A) I2(A) I3(A) I1=I2+ I3 (A)

Review Questions:

1. Define Resistance, Inductance and capacitance.

2. Explain Colour coding of resistor.
3. Define active and passive elements
4. Define Unilateral and Bilateral elements.
5. Define linear and Non-Linear elements.

RESULT:

Thus the Kirchoff’s current law and Kirchoff’s voltage law are verified.

13
14
Ex.No:3

VERIFICATION OF SUPERPOSITION THEOREM

Preparatory Questions

1. Define Lumped and distributed elements.

2. Define ohm’s law.
3. What is the equivalent resistance for the resistor if it is connected in series and parallel?
4. What is the equivalent Capacitance for the capacitor if it is connected in series and
Parallel?
5. What is the equivalent Inductance for the Inductor if it is connected in series and
Parallel?

AIM:
To verify the superposition theorem for the given electric circuit.

STATEMENT:
In a linear lumped element, bilateral electric circuit energized by two or more sources,
the current in any resistor is equal to the algebraic sum of the separate currents in each resistor
when each source act, separately.

The Voltage sources are short-circuited and the current sources are open circuited in
order to replace the other sources by their respective internal resistances.

APPARATUS REQUIRED:

S.No Name Range Qty

1 RPS (Regulated Power Supply) (0-30) V 1
2 Ammeter (0-1) mA 1
3 Resistors 10KΩ, 22KΩ,5.8KΩ Each 2
4 Connecting wires Required
5 Breadboard 1

PROCEDURE:
To find I, I1 & I2:
1. Connections are given as per the circuit diagram.
2. Switch on the power supply.
3. Set a particular voltage value using VS1 and VS2 & note down the ammeter
reading.
4. Set the same voltage in using VS1 alone and short circuit the terminals and
note the ammeter reading.
5. Set the same voltage in VS2 alone as in circuit I and note down the ammeter
reading.
6. Verify superposition theorem.

15
 (a) When both Vs1& VS2 are active

(b) When VS1 acts alone

(c) When VS2 acts alone

16
TABULAR COLUMN:

Theoretical Practical
VS1 VS2
I I1 I2 I = I1 + I2 I I1 I2 I = I1 + I2
(volts) (volts)
(mA) (mA) (mA) (mA) (mA) (mA) (mA) (mA)

Review Questions:

1. State superposition theorem.

2. What is duality theorem?
3. Explain dependent sources and sources transformation.
4. Explain Star-Delta conversion
5. State voltage division rule & State current division rule.

RESULT:
Thus the superposition theorem is verified.

17
18
Ex.No:4

VERIFICATION OF MAXIMUM POWER TRASNFER AND

RECIPROCITY THEOREM

Preparatory Questions

1. Define duality
2. What is transient state?
3. What is transient time?
4. What is natural response?
5. What is transient response?

AIM:
a. To practically verify the maximum power transfer theorem for the network with the
theoretical value.
b. To practically verify the reciprocity theorem for the network with the theoretical
calculation.

STATEMENT:

Maximum power transfer theorem:

This theorem states that maximum power will be delivered from a voltage source to
a load when the load resistance is equal to the internal resistance of the source.

V2th
Max. Power transferred = -----------
4 Rth

APPARATUS REQUIRED:

S.No Name Range Qty

1 RPS (Regulated Power Supply) (0-30) V 1
2 DRB (0-10)KΩ 1
3 Voltmeter 0 –5V 1
4 Connecting wires Required
5 Resistors 1KΩ, 2.2KΩ Each 1
6 Breadboard 1

a. MAXIMUM POWER TRANSFER THEOREM:

PROCEDURE:

1. Remove the portion of network through which power has to be transferred.

2. Name those terminals as A and B.
3. Calculate Rth by substituting all sources with internal resistance working back at network

19
4. Give the connections as per the circuit diagram.
5. By varying the DRB (RL) for values of RL, measure the current through RL.
6. Calculate the power delivered to RL.
7. Verify resistance (RL) at PL(max) is equal to Rth.

CIRCUIT DIAGRAM:
R1=1K
30V

RL +
+
30V V (0-5V)
- R2=2.2K
K30V
-
(0-10K)

TABULATION

Experimental values:
RLΩ Vth(v) P=Vth2/4RL
(w)

MODEL GRAPH:
P Pmax

20
RECIPROCITY THEOREM:

In any linear bilateral network the ratio of voltage to current response, in any element
to the input is constant even when the position of the input and output are interchanged.

APPARATUS REQUIRED:

S.No Name Range Qty

1 RPS (Regulated Power Supply) (0-30) V 1
2 Ammeter 0 – 50 mA 1
3 Voltmeter 0 – 25V 1
4 Connecting wires Required
5 Resistors 470Ω,100Ω,940Ω Each 2
6 Breadboard 1

PROCEDURE:
1. Connections are given as per the circuit diagram.
2. Note down the ammeter reading and find the ratio of the output current and input
voltage.
3. Interchange the position of ammeter and the voltage source.
4. Note down the ammeter reading and find the ratio of the output and input voltage.
5. Compare this value with the value obtained in step 2.

CIRCUIT DIAGRAM:

940 Ω R1 100 Ω R3

I
+ (0-30) V 470 Ω 100 Ω
R2 R4

- _

Circuit 1: To Measure the Load Current

940 Ω R1 100 Ω R3

IT I
+ (0-30) V 470 Ω 100 Ω
R2 R4

- _ + (0 -30)mA
A
-

21
Req = (R3+R4)* R2
------------------------- + R1
(R3+R4) + R2

IT = V/ Req

I = IT * R2
------------------
((R3+R4) + R2)

TABULATION

Experimental values: Theoretical values:

V (Volts) I (mA) Z = V/I V (Volts) I (mA) Z = V/I

0 0

2 2

4 4

6 6

Circuit 2: After Interchanging Positions of V and I

940ΩR1 100 Ω R3

I IT
100 Ω
+ 470 Ω R4
A R2 +
(0-30mA) (0-30)V
- -

Req = R1* R2
------------------+ R3+R4
R1+R2

IT = V/ Req

I= IT * R2
----------------
R1+R2

22
TABULATION

Experimental values: Theoretical Values

V (Volts) I (mA) Z = V/I V (Volts) I (mA) Z = V/I

0 0

2 2

4 4

6 6

Review Questions:
1. State Maximum Power transfer theorem.
2. State reciprocity theorem?
3. What is duality theorem?
4. Explain dependent sources and sources transformation.
5. Explain Star-Delta conversion

RESULT:

Hence the maximum power transfer and reciprocity theorem for the given networks
are practically verified.

23
24
Ex.No.5

CHARACTERISTICS OF PN JUNCTION DIODE

Preparatory Questions

1. What is a semiconductor?
2. Write the Diode current Equation.
3. What is the value of Vt at room temperature
4. What is meant by forward bias
5. What is meant by reverse bias?

AIM:
To determine the VI characteristics of PN Diode.

APPARATUS REQUIRED:

S.No Name Range Qty

1 RPS (Regulated Power Supply) (0-30)V 1
2 Ammeter (0-5)mA, 1
(0-25)mA 1
3 Voltmeter (0-10)V 1
(0-1 )V 1
4 Connecting wires - Required

5 Bread Board 1
6 Resistors 1KΩ 1
7 Diode- PN BY127 1

THEORY:

A diode is a PN junction formed by a layer of P type and layer of N type

Semiconductors. Once formed the free electrons in the N region diffuse across the junction
and combine with holes in P region and so a depletion Layer is developed. The depletion
layer consists of ions, which acts like a barrier for diffusion of charged beyond a certain limit.
The difference of potential across the depletion layer is called the barrier potential. At
2.5degree the barrier potential approximately equal 0.7v for silicon diode and 0.3v for
germanium diode.

When the junction is forward bias, the majority carrier acquired sufficient energy to
overcome the barrier and the diode conducts. When the junction is reverse biased the
depletion layer widens and the barrier potential increases. Hence the Majority carrier cannot
cross the junction and the diode does not conduct. But there will be a leakage current due to
minority carrier. When diode is forward biased, resistance offered is zero, and when reverse
biased resistance offered is infinity. It acts as a perfect switch.

25
PIN DIAGRAM:

CIRCUIT DIAGRAM:

FORWARD BIAS:

REVERSE BIAS:

26
PROCEDURE:

FORWARD BIAS:

1. The connections are made as per the circuit diagram.

2. The positive terminal of power supply is connected to anode of the diode and
negative terminal to cathode of the diode.
3. Forward voltage Vf across the diode is increased in small steps and the forward
current is noted.
4. The readings are tabulated. A graph is drawn between Vfand I f.

REVERSE BIAS:

1. The connections are made as per the circuit diagram.

2. The positive terminal of power supply is connected to cathode of the diode and
negative terminal to anode of the diode.
3. Reverse voltage Vr across the diode is increased in small steps and the Reverse
current is noted.
4. The readings are tabulated. A graph is drawn between V r and I r.

TABULATION:

FORWARD BIAS:

Vf(volts) If(mA)

REVERSE BIAS:

Vr(volts) Ir(mA)

27
MODEL GRAPH

Review Questions:

1. How a PN junction is formed?

2. In what way the width of depletion region can be varied?
3. What is potential barrier?
4. In forward bias condition the current condition is due to______
5. What is reverse saturation current Ico?

RESULT:

Thus the characteristics of PN-Junction diode were drawn.

28
Ex.No.6a

CHARACTERISTICS OF ZENER DIODE

Preparatory Questions

1. How the name of the Zener came?

2. What is cause of reverse breakdown?
3. What is zener voltage?
4. Write the Symbol for the Zener diode.
5. What are the different types of breakdowns in semiconductor junctions?

AIM:
To determine the VI characteristics of Zener Diode

APPARATUS REQUIRED:

S.No Name Range Type Qty

1 RPS (0-30)V 1
2 Ammeter (0-30) mA 1
3 Voltmeter (0-10)V 1
(0-1 )V 1
4 Connecting wires - As
Required
5 Bread Board 1
6 Resistors 1KΩ 1
7 Diode- Zener FZ 5V6/ FZ 6V2 1

THEORY:

Zener diodes have many of the same basic properties of ordinary semiconductor
diodes. When forward biased, they conduct in the forward direction and have the same turn
on voltage as ordinary diodes. For silicon this is about 0.6 volts.

In the reverse direction, the operation of a Zener diode is quite different to an ordinary
diode. For low voltages the diodes do not conduct as would be expected. However, once a
certain voltage is reached the diode "breaks down" and current flows. Looking at the curves
for a Zener diode, it can be seen that the voltage is almost constant regardless of the current
carried. This means that a Zener diode provides a stable and known reference voltage. Hence
they are used as Voltage regulators.

PIN DIAGRAM:

29
CIRCUIT DIAGRAM:

FORWARD BIAS:

REVERSE BIAS:

PROCEDURE:

FORWARD BIAS:

1. The connections are made as per the circuit diagram.

2. The positive terminal of power supply is connected to anode of the diode and
negative terminal to cathode of the diode.
3. Forward voltage Vf across the diode is increased in small steps and the forward
current is noted.
4. The readings are tabulated. A graph is drawn between V f and I f.

30
REVERSE BIAS:

1. The connections are made as per the circuit diagram.

2. The positive terminal of power supply is connected to cathode of the diode and
negative terminal to anode of the diode.
3. Reverse voltage Vr across the diode is increased in small steps and the Reverse
current is noted.
4. The readings are tabulated. A graph is drawn between V r and I r.

TABULAR COLUMN:

FORWARD BIAS:

Vf(volts) If(mA)

REVERSE BIAS:

Vr(volts) Ir(mA)

MODEL GRAPH

31
Review Questions:

1. What is the difference between p-n Junction diode and zener diode?
2. Can we use Zener diode as a switch?
3. Explain working of a Zener Diode.
4. What is the max value of voltage of Zener breakdown devices?
5. What is cause of reverse breakdown?

RESULT:

Thus the characteristics of Zener diode were drawn.

32
Ex.No.6 b

DESIGN OF VOLTAGE REGULATOR USING ZENER DIODE

Preparatory Questions

1. How Zener diode acts as a voltage regulator?

2. Explain working of a Zener Diode.
3. Explain Zener Breakdown.
4. Explain avalanche breakdown.
5. Compare Zener and avalanche Breakdown.

AIM:
To study the Zener Diode as Voltage Regulator.

APPARATUS REQUIRED:

S.No Name Range Qty

1 RPS (Regulated power supply) (0-30)V 1
2 Ammeter (0-30) mA 1
3 Voltmeter (0-10)V 1
(0-1 )V 1
4 Connecting wires As Required
5 Bread Board 1
6 Resistors 1KΩ 1
7 Diode- Zener FZ 5V6/ FZ 6V2 1

THEORY:

Zener diodes have many of the same basic properties of ordinary semiconductor
diodes. When forward biased,they conduct in the forward direction and have the same turn
on voltage as ordinary diodes. For silicon this is about 0.6 volts.

In the reverse direction, the operation of a Zener diode is quite different to an ordinary
diode. For low voltages the diodes do not conduct as would be expected. However, once a
certain voltage is reached the diode "breaks down" and current flows. Looking at the curves
for a Zener diode, it can be seen that the voltage is almost constant regardless of the current
carried. This means that a Zener diode provides a stable and known reference voltage. Hence
they are used as Voltage regulators.

PIN DIAGRAM:

33
CIRCUIT DIAGRAM:

PROCEDURE:

1. The connections are made as per the circuit diagram.

2. Keep Load resistance RL constant.
3. Vary the Input voltage and note down the corresponding output voltage.
4. Now keep voltage constant vary the RLand note down the voltmeter
corresponding reading.
5. Plot the respective regulations graph.

TABULAR COLUMN:

LOAD REGULATION:

RL (kΩ) Vout (V)

LINE REGULATION:

Vin (V) Vout (V)

34
MODEL GRAPH

Vout (V) Vout (V)

RL (kΩ) Vin (V)

LOAD REGULATION LINE REGULATION

Review Questions:

1. What are the applications of Zener diode?

2. What is voltage regulator?
3. What is cut-in-voltage?
4. What is break down voltage?
5. Draw characteristics of Zener Diode under Forward & Reverse Bias Conditions

RESULT:

Thus the Zener diode as a Voltage Regulator were studied.

35
36
Ex.No:7
CHARACTERISTICS OF CE CONFIGURATION

Preparatory Questions

1. Explain the operation of CE configuration

2. Determine the output resistance and input resistance
3. What is the relation between α, β and γ?
4. Define current gain in CE configuration?
5. Why CE configuration is preferred for amplification

AIM:

To plot the transistor characteristics (INPUT & OUTPUT) of CE configuration.

APPARATUS REQUIRED:

S.No. COMPONENTS SPECIFICATION QTY

1 Transistor BC 107 Max Rating : 50V 1A, 3W 1
2 Resistors 10KΩ,100Ω 2

3 RPS (Regulated power supply) (0-30) V 1

4 Voltmeters (0-10) V 1
(0-1) V 1
5 Ammeters (0-30) mA 1
(0-100)µA 1
6 Bread board 1
7 Connecting wires Required

THEORY:

A NPN function transistor consist of a silicon (or germanium) crystal in which a layer
of p – type silicon is sandwiched between two layers of N – type silicon. The arrow on
emitter lead specifies the direction of the current flow when the emitter – base function is
biased in the forward direction since the conductivity of the BJT depends on both the majority
and minority carriers it is called bipolar device. In CE configuration, Emitter is common to
both the Emitter and Base.

PIN DIAGRAM OF BC107

E B

37
CIRCUIT DIAGRAM:

DESCRIPTION:

Input Characteristics:

Voltage across Base Emitter junction VBE vs IB, where VCE is constant

Output Characteristics:

Voltage across Collector Emitter junction VCE vs IC where IB is constant.

PROCEDURE:

Input Characteristics:

1. Connections are made as per the circuit diagram.

2. VCE is kept constant (say 2v), VBE is varied insteps of 0.1v and the corresponding IB
values are tabulated. The above procedure is repeated for 1V etc.
3. Graph is plotted between VBE vs IB, where VCE constant.

Output Characteristics:

1. Connection are made as per the circuit diagram

2. IB is kept constant, VCE is varied in step IV the corresponding IC values are
tabulated. The above procedure is repeated for different constant values.
3. Graph is plotted between VCE and Ic for a constant IB.

38
TABULATION:

Input Characteristics:

VCE = V VCE = V
VBE(V) IB (µA) VBE(V) IB(µA)

Output characteristics:

IB = µA IB = µA
VCE(V) IC (mA) VCE(V) IC(mA)

MODEL GRAPH:

INPUT CHARACTERISTICS
VCE=1V 2V 3V OUTPUT CHARACTERITICS
I =
B
IB 30μA
IC 20 μA
10 μA

VBE (v)
VCE

Review Questions:

1. List the current components of BJT in CE configuration

2. What is Early Effect?
3. Why the doping of collector is less compared to emitter?
4. What do you mean by “reverse active”?
5. What is the difference between CE and Emitter follower circuit?

RESULT:

Thus the input and output characteristic of BJT in Common Emitter mode is drawn.

39
40
Ex.No:8

CHARACTERISTICS OF CB CONFIGURATION

Preparatory Questions

1. Explain the operation of CB configuration

2. Determine the output resistance
3. Determine input resistance
4. Explain input characteristics
5. Explain output characteristics

AIM:

To plot the transistor characteristics (INPUT & OUTPUT) of CB configuration.

APPARATUS REQUIRED:

S.No. COMPONENTS SPECIFICATION QTY

1 Transistor BC 107 Max Rating : 50V 1A, 1
3W
2 Resistors 470Ω 2
3 RPS (Regulated power supply) (0-30) V 1
4 Voltmeters (0-10) V 1
(0-1) V 1
5 Ammeters (0-30) m A 2
6 Bread board - 1
7 Connecting wires Required

THEORY:

A NPN function transistor consist of a silicon (or germanium) crystal in which a layer
of p – type silicon is sandwiched between two layers of N – type silicon. The arrow on
emitter lead specifies the direction of the current flow when the emitter – base function is
biased in the forward direction since the conductivity of the BJT depends on both the majority
and minority carriers it is called bipolar device. In CB configuration, base is common to
both the emitter and collector.

PIN DIAGRAM OF BC107

E B

41
CIRCUIT DIAGRAM:

DESCRIPTION:

Input Characteristics:

Voltage across Base Emitter junction VBE vs IE, where VCB is constant

Output characteristics:

Voltage across Collector Emitter junction VBC vs IC where IE is constant

PROCEDURE:

Input Characteristics:

1. Connections are made as per the circuit diagram.

2. VCB is kept constant (say 2v), VBE is varied insteps of 0.1v and the
corresponding IE values are tabulated. The above procedure is repeated for 1V
etc.
3. Graph is plotted between VBE vs IE, where VCB constant.

Output Characteristics:

1. Connection are made as per the circuit diagram

2. IE is kept constant, VBC is varied in step IV the corresponding IC values are
tabulated. The above procedure is repeated for different constant values.
3. Graph is plotted between VBC and Ic for a constant IE.

42
TABULATION:
Input Characteristics:

VCB = V VCB = V
VBE (V) IE (mA) VBE (V) IE (mA)

Output Characteristics:

IE= mA IE= mA
VBE (V) IC (mA) VBE (V) Ic (mA)

MODEL GRAPH:
INPUT CHARACTERISTICS OUTPUT CHARACTERITICS
VCB= 3V 2V 1V IE=
3mA
IE IC 2mA
(mA)
(mA) 1mA

VBE (v) VCB (v)

Review Questions:

1. Bring out the comparison of CC and CB transistor parameters

2. Give the relation of Ebers moll equation.
3. Bring out the comparison of CE and CB transistor parameters
4. Draw input and output characteristics of CB?
5. Explain Gummen poll model

RESULT:

Thus the input and output characteristic of BJT in Common Base mode is drawn.

43
44
EX .NO-9

CHARACTERISTICS OF FET.
Preparatory Questions

1. Why it is called by name “field effect transistor”?

2. What are the advantage of FET OVER BJT?
3. What are the disadvantages of FET?
4. What is the significance of arrowhead in FET symbol?
5. Why FET is called unipolar device

AIM:

To plot the drain and transfer characteristics of JFET & to find drain resistance,
transconductance, amplification factor, drain saturation current IDSS and Pinch off voltage.

APPARATUS REQUIRED:

S.No. Components Specification Qty

1 FET BFW10 1
Idss> 8 mA, Vp<8V
2 Resistors 1KΩ 1
3 RPS (Regulated dual power supply) (0-30)V 1
4 Voltmeters (0-10)V, (0-25)V 1
5 Ammeters (0-25) mA 1
6 Bread board 1
7 Connecting wires Required

THEORY:

Field effect transistor is a semiconductor device that depends for its operation on the
control of current by an electric field. Its operation depends on the flow of majority carriers
only. It is therefore a unipolar device. It exhibits a high input resistance. An N- channel JFET
consists of a N-type bar is sandwiched between two heavily doped Persians. Due to the
concentration gradient, the depletion region formed. On both sides of the semiconductor bar
the ohmic contacts are made. One terminal is called source & other is called drain. Both the
p-type regions are connected together.

PIN DIAGRAM OF BFW10

S
G

Shield

45
DESCRIPTION:

DRAIN CHARACTERISTICS +

INPUT: Drain voltage VDS is varied insteps of 1V, VGS is kept constant

OUTPUT: Drain current ID

TRANSFER CHARACTERISTICS

INPUT: Gate – source voltage VGS is varied, Drain –source voltage VDS is kept constant

OUTPUT: Drain current ID

PROCEDURE:

Drain Characteristics:

1. Connections are made as per the circuit diagram.

2. Gate –source voltage VGS is kept constant (say –1v), drain voltage VDS is varied
insteps of 1v and the corresponding drain current ID values are tabulated.
3. The above procedure is repeated for VGS= -2v, 0v.
4. The graph is plotted VDS and ID for a constant VGS.
5. The drain resistance is found from the graph

rd = ΔVDS/ Δ ID

Transfer Characteristics:

1. Connections are made as per the circuit diagram.

46
 2. Drain –source voltage VDS is kept constant (say 5v), the gate – source voltage VGS
is varied insteps of 1v (-VE voltage) and the corresponding drain current ID values
are tabulated.
3. The above procedure is repeated for VDS = 10v, 15v,
4. Graph is plotted between VGS and ID for a constant VDS.
5. The trans conductance is found from the graph

gm = Δ ID/ΔVG

TABULAR COLUMN:

Drain characteristics

VGS = V VGS = V
VDS (V) ID (mA) VDS (V) ID (mA)

Transfer characteristics

VDS = V VDS =V
VGS (V) ID (mA) VGS (V) ID (mA)

MODEL GRAPH:

DRAIN CHARACTERISTICS TRANSFER CHARACTERISTICS

ID
VGS=-0V (mA)
ID ID VDS=CONST
(mA) VDSID
VGS=-2V
VGS

VGS (v)
VDS (v)

47
CALCULATION

Transconductance gm = Δ ID/ΔVG
Drain resistance rd = Δ VDS /Δ ID
Amplification factor μ = gmrd

Review Questions:

1. Define VVR.
2. Why MOSFET is preferred than FET?
3. What are the differences between FET & MOSFET?
4. What are the applications of FET?
5. Why FET is called us voltage controlled device?

RESULT:

Thus the drain and transfer for characteristics of JFET is drawn.

Drain resistance rd =
Trans conductance gm =
Amplification factor =

48
EX NO: 10
CHARACTERISTICS OF SCR
Preparatory Questions
1. What is an SCR?
2. What are the methods to trigger ON SCR?
3. What is meant by break over voltage of SCR?
4. What is meant by holding current and latching current in SCR?
5. SCR a unidirectional or bidirectional device.

AIM:
To construct a circuit using SCR to draw its Firing Characteristics.

APPARATUS REQUIRED:

S.No Components Specification Quantity

1 SCR (TYN616) 1
2 Dual RPS (0-30)V 2
3 Resistor 10KΩ, 1KΩ 1 each
4 Ammeter (0-200)mA 2
5 Voltmeter (0-20)V 1
6 Bread board 1

THEORY:

The SCR consists of four layers of semiconductor material alternatively P type and
N type. It can be brought of as an ordinary rectifier with a control element .The control
element is called GATE. The gate current determines the anode to cathode voltage at which
the device starts to conduct.

It means that gate terminal of the SCR is controlled by the applied voltage. Once
switched ON the gate has no further control. To switch the SCR the anode current has to
be reduced below a certain level called HOLDING CURRENT.

The SCR can be triggered ON with the gate or amplitude triggering, pulse
triggering methods. The terms ON & OFF are used to represent the conduction and blocking
mode of SCR respectively open circuited with the anode to cathode voltage made large
enough .In conduction state the SCR behaves as an ordinary diode.

The anode to cathode voltage at which the SCR conducts is called BREAK OVER
VOLTAGE or FORWARD BLOCKING VOLTAGE. It has great switching speed than other
devices.

49
PIN DIAGRAM:

CIRCUIT DIAGRAM:

PROCEDURE:

1. All the connections are made as per the circuit diagram.

2. Keep the gate current (IG) open i.e. IG = 0 mA.
3. Vary the anode to cathode supply voltage and note down the readings of Voltage VAK
(V), and Current IAK (µA).
4. Now Keep the gate current (IG) at a standard value of 10 mA i.e. IG = 10 mA.
5. Again vary the anode to cathode supply voltage and note down the corresponding
readings of Voltage VAK (V), and Current IAK (mA).
6. Plot the graph by taking VAK (V) on x-axis and Current IAK (mA) on y-axis.
7. Measure the Break-over voltage (VBO) and Holding current (IH) of SCR from the graph.

50
TABULAR COLUMN:

S.No. IG=0mA IG = 10 mA
VAK (V) IAK (µA) VAK (V) IAK (µA)

MODEL GRAPH:

IA

IH

IL

VAK
VBO

Review Questions:

1. What is meant by Valley Point and Peak Point?

2. After triggering an SCR, the gate pulse is removed. What is the state (ON or OFF) of
the device at this condition? Justify our answer
3. Why is Peak Reverse Voltage Important?
4. What is asymmetrical SCR?
5. What is the difference between SCR and TRIAC?

RESULT:

The V-I characteristics of SCR are drawn and the Break-over voltage (VBO), Holding
current (IH) of SCR are found.
1. The Break-over voltage (VBO) of SCR is _____________.
2. The Holding current (IH) of SCR is _________________.

51
52
Ex.No:11.a
DESIGN OF CLIPPER AND CLAMPER
Preparatory Questions

1. What is clipper?
2. What is clamper?
3. Difference between clipper and clamper?
4. What are different types of clampers?
5. Positive base and negative base clippers means

AIM:
To construct and study the operation of clipper and clamper circuits.

APPARATUS REQUIRED:

S.No COMPONENTS RANGE/SPECIFICATION QUANTITY

1. Resistor 4.7KΩ,100KΩ 1each
2. Capacitor 0.1µf 1
3. Diode IN4001 1
4. AFG 1MHz 1
5. CRO 30MHz 1
6. Bread Board 1
7. Regulated power (0 – 30 )V 1
supply
THEORY:

The basic action of a clipper circuit is to remove certain portions of the

waveform, above or below certain levels as per the requirements. Thus the circuits which are
used to clip off unwanted portion of the waveform, without distorting the remaining part of
the waveform are called clipper circuits or Clippers. The half wave rectifier is the best and
simplest type of clipper circuit which clips off the positive/negative portion of the input
signal. The clipper circuits are also called limiters or slicers.

53
PROCEDURE

Clipper Circuit

1. Connect the components and apparatus as shown in the circuit diagram.

2. Set input, sinusoidal signal of 8Vp-p and 1 kHz frequency and the reference voltage as
2V using RPS.
3. Observe the output across the diode using CRO.
4. Plot the input and output signal in a linear graph.

NEGATIVE PEAK CLIPPER

MODEL GRAPH

54
Theoretical calculations:

Vr=2v, Vγ=0.6v
When the diode is forward biased Vo =-(Vr+ Vγ) = -(2v+0.6v )= -2.6v
When the diode is reverse biased the Vo=Vi

PROCEDURE

Clamper Circuit

1. Connect the components and apparatus as shown in the circuit diagram.

2. Set input, sinusoidal signal of 8Vp-p and 1kHz frequency
3. Observe the output across the load resistance using CRO.
4. Plot the input and output signal in a linear graph.

CIRCUIT DIAGRAM

POSITIVE CLAMPER

55
CIRCUIT DIAGRAM

NEGATIVECLAMPER

56
Review Questions:

1. How does a clamper circuit add a dc level to the output voltage?

2. What I do you mean by biased and combinational clipper?
3. What are the classifications of a clipper circuit?
4. Why capacitors are used in clampers?
5. What happens in the output waveform if the polarity of capacitor is changed in the
clampers

RESULT:
Thus the clipper and clamper circuits are designed and the output waveforms are
observed.

57
58
Ex.No:11.b

FULL WAVE RECTIFIER

Preparatory Questions

1. What is a Rectifier?
2. What are types and its difference?
3. What is ripple factor?
4. What is meant by regulation?
5. What is a filter?

AIM:
To construct full wave rectifier and to calculate ripple factor and regulation.

APPARATUS REQUIRED:

S,No Name of the Component Specification/Rating Quantity(in number)

1. Transformer 230 V / (9-0-9) 1
2. Diode IN4007 2
3. Decade Resistance Box (1KΩ-10 KΩ) 1
4. Capacitor 100µF 1
5. Voltmeter (0-20V)MC 2
6 Multimeter - 1
7. Bread board , connecting wires - 1,few

THEORY:
The full wave rectifier conducts for both the positive and negative half cycles of the
input AC supply. In order to rectify both the half cycles of the AC input, two diodes are used
in this circuit. The diodes feed a common load resistance with the help of a centre tapped
transformer. The rectifier’s DC output is obtained across the load. The DC load current for
the full wave rectifier is twice that of the half wave rectifier. The efficiency of full wave
rectification is twice that of half wave rectification. The ripple factor for the full wave rectifier
is less compared to the half wave rectifier.

PROCEDURE:
1. Connect the circuit as per the circuit diagram. For full wave rectifier without filter.
2. Connect the primary side of the transformer to ac mains and the secondary side to the
rectifier input
3. Switch on the supply.
4. Vary the DRB and note down the corresponding voltmeter and ammeter reading.
5. Calculate the ripple factor and regulation.
6. Repeat the above steps for full wave rectifier with filter.

59
CIRCUIT DIAGRAM:

FULLWAVE RECTIFIER WITHOUT FILTER:

MC

MC

FULLWAVE RECTIFIER WITH CAPACITIVE FILTER:

MC

MC

TABULATION:

FULL WAVE RECTIFIER WITHOUT FILTER

Time
S.No. Vpp Vm Vripple Vdc
period

60
FULL WAVE RECTIFIER WITH CAPACITIVE FILTER

Time
S.No. Vpp Vm Vripple Vdc
period

FORMULA USED:
Vac V  V FL
Ripple Factor = and % Regulation = NL * 100%
Vdc V NL

Review Questions:

1. What is a full wave rectifier?

2. What is the value of the ripple factor of a full wave rectifier?
3. What is the maximum efficiency that can be obtained in a full wave rectifier?
4. What is the advantage of full wave rectifier over half wave rectifier?
5. Define Transformer utilization factor.

RESULT:
Thus the full wave rectifier was constructed and the ripple factor and percentage
regulation were calculated as,
Ripple factor: i) With filter = ii) Without filter =
% Regulation: i) With filter = ii) Without filter =

61
62
Ex.No:12

SIMULATION OF DIODE CHARACTERISTICS AND RECTIFIERS USING

PSPICE
Preparatory Questions

1. What is meant by SPICE?

2. What is meant by simulation?
3. What is ORCAD
4. What is EDA tool?
5. List some EDA tools.

AIM:

To Study and Simulate V-I characteristics of a Diode and Rectifiers using PSPICE windows.

APPARATUS REQUIRED:

PSPICE Tool

CIRCUIT DIAGRAM:

(i). DIODE:

PROGRAM:

vd 1 0 dc 1v
d1 1 2 d1n914;
vx 2 0 dc 0v;
.model D1N914 D(Is=168.1E-21 N=1 Rs=.1 Ikf=0 Xti=3 Eg=1.11 Cjo=4p
M=.3333 Vj=.75 Fc=.5 Isr=100p Nr=2 Bv=100 Ibv=100u Tt=11.54n)
.dc vd 0 1v 0.01v;
.plot dc I(vx);

63
.probe;
.tran 0us 100us;
.end;

OUTPUT:

The forward biased silicon diode in an electronic system under dc condition has a drop of
0.7v across it in conduction state at any value of diode current.

(ii). HALF WAVE RECTIFIER :

PROGRAM:
64
VIN 2 0 sin(0 220V 50HZ)
RL 5 0 500
RS 2 1 10
L1 1 0 2000uH
L2 3 0 20uH
K1 L1 L2 0.99999
D1 3 5 D1N4009
.model D1N4009 D(Is=544.7E-21 N=1 Rs=.1 Ikf=0 Xti=3 Eg=1.11 Cjo=4p
M=.3333
+ Vj=.75 Fc=.5 Isr=30.77n Nr=2 Bv=25 Ibv=100u Tt=2.885n)
.tran 0.2m 200m
.plot tran v(3), v(5)
.probe
.end

OUTPUT:

65
(iii). FULL WAVE RECTIFIER :

PROGRAM:

Vin 2 0 sin(0 230V 50HZ)

RL 5 4 1000
RS 2 1 10
L1 1 0 2000
L2 3 4 10
L3 4 0 10
K1 L1 L2 L3 0.99
D1 0 5 D1N4009
D2 3 5 D1N4009
.model D1N4009
D(Is=544.7E-21 N=1 Rs=.1 Ikf=0 Xti=3 Eg=1.11 Cjo=4p M=.3333
+ Vj=.75 Fc=.5 Isr=30.77n Nr=2 Bv=25 Ibv=100u Tt=2.885n)
.tran 0.2ms 200ms
.probe
.end

66
OUTPUT:

Review Questions:

1. What is meant by AC and DC analysis?

2. What is meant by Transient Analysis?
3. What is use of Plot and Probe?
4. What are the uses of PSPICE?
5. List Advantages of PSPICE.

RESULT:

Thus the characteristics of Diode and Rectifier circuits are simulated using PSPICE

67
68
 ADDITIONAL
EXPERIMENTS

69
70
Ex.No:13

CHARACTERISTICS OF UNIJUNCTION TRANSISTOR

Preparatory Questions

1. What is UJT?
2. What is current controlled device?
3. What is voltage controlled device?
4. What are the charge carriers in UJT?
5. List the applications of UJT?

AIM:

To plot the characteristics of Uni-Junction transistor (UJT) & and to generate saw
tooth waveform using UJT.

APPARATUS REQUIRED:

S,No Name of the Component Specification /Rating Quantity(in number)

1. Dual regulated power supply (0 - 30V) 1
2. Voltmeter (0-30V)MC 2
3. Ammeter (0-30mA)MC 1
4. Unijunction transistor 2N2646 1
5. Resistors 560Ω,1KΩ Each one
6. Bread board, connecting wires. - 1,few
7. CRO - -

THEORY:

The UJT consists of a bar of lightly doped N type Si with a small piece of heavily
doped p-type joined to one side of the base. The two terminals of the N-type bar are designated
as Base 1 (B1) and Base 2 (B2) the P type region is termed as the emitter (E) .Since the Si bar
is lightly doped, it exhibits high resistance which can be represented as two resistors (RB1 and
RB2). Let V1 be the voltage across RB1 and V2 be the voltage across RB1 where RB1 and RB2
are the base resistances. If the emitter is forward biased and the forward bias voltage is greater
than V2, the emitter current starts flowing. The voltage at which the device starts conducting
is called the peak Voltage (V p) .When the emitter voltage is increased beyond V p, the charge
carriers are injected into N region and the resistance starts decreasing .Now the device enters
the negative resistance region .As the voltage decreases, the emitter current increases. When
the current reaches a certain limit, the resistance is saturated and the voltage falls to a low
value called valley voltage (VV). The intrinsic standoff ratio is found with the values of Vp,
Vv and VB1B2If the voltage is increased further the emitter current increases rapidly, with
slight increase in emitter voltage similar to a forward diode.

PROCEDURE:

71
CHARACTERISTICS OF UJT

1. The connections are given as per the circuit diagram.

2. The power supply is switched ON.
3. The voltage across B1 and B2 (V B1 B2) is set to some desired value.
4. The emitter voltage (VE) is slowly increased. At a certain voltage, the device starts
conducting .The voltage at this point is called the peak voltage (VP). With the supply
voltage is increased further, the emitter voltage falls and the current increases and in
each step, the readings are tabulated.
5. The experiment is repeated for different values of V B1 B2.
6. The characteristics are plotted between emitter current along X axis and emitter
voltage along Y axis for different values of V B1 B2 .The peak and valley voltage are
marked on the graph.

SAW TOOTH WAVEFORM GENERATION

1. The connections are given as per the circuit diagram.

2. The power supply is switched ON.
3. The output saw tooth waveform is generated across the capacitor is seen in a CRO.
4. The frequency and amplitude of the waveform is noted and sketched.

CIRCUIT DIAGRAM:

CHARACTERISTICS OF UJT SAWTOOTH WAVEFORM GENERATION

10V

100k 470Ω

10nF

47Ω

72
MODEL GRAPH:

CHARACTERISTICS OF UJT SAWTOOTH WAVEFORM

TABULAR COLUMN:

VB1B2=10V VB1B2=15V
S.No
VE(V) IE(mA) VE(V) IE(mA)

CALCULATIONS:
VP  VV
Intrinsic standoff ratio 
VB1B 2

Review Questions:

1. What is the difference between UJT and BJT?

2. Define peak and valley voltage.
3. What is intrinsic standoff ratio of a UJT?
4. What are advantages of UJT?
5. How does UJT differ from a FET?

RESULT:
The characteristic of UJT is drawn and the saw tooth waveform is plotted.
Peak Voltage Vp =
Intrinsic standoff ratio () =

73
74
Ex.No:14
FREQUENCY RESPONSE OF SERIES AND PARALLEL
RESONANCE CIRCUITS

Preparatory Questions

1. What is a parallel resonant circuit?

2. What is a series resonant circuit?
3. What are tuned circuits?
4. When the circuit is said to be in resonance?
5. What is resonant frequency?

AIM:
To plot the current vs frequency graph of series and parallel resonance circuits and
hence measure the bandwidth, resonant frequency.

APPARATUS REQUIRED:

Sl.No Name Range Qty

1. Signal Generator 2MHz 1
2. CRO 30MHz 1
3. Connecting Wires
4. Resistors 1K, 470Ω,100Ω 1 each
5. Capacitors 0.01uF, 0.1µf 2

6. Inductors 99mH, 300mH 1

7. Bread Board 1

Circuit Description ForRLC Series Circuit:

A circuit is said to be in resonance when applied voltage V and current I are
in phase with each other. Thus at resonance condition, the equivalent complex
impedance of the circuit consists of only resistance (R). So current is maximum.
Since V and I are in phase, the power factor is unity.

When the frequency is equal to complex impedance

V = R + j (XL – XC)
Where
XL = L
XC = 1/C

75
Resonance Curve:
The curve between current and frequency is known as resonance curve. The shapes
of such curve for of R as shown in fig (1). For smaller values of R, current Vs frequency
wave is sharply peak, but for larger values of R, it is flat.

Bandwidth of a Resonance Circuit:

Bandwidth of a circuit is given by the band of frequencies which lies between two
points on either side of resonance frequency, where current falls through 1/1.414 of the
maximum value of resonance. Narrow is the bandwidth, higher the selectivity of the circuit.
As shown in fig, the bandwidth AB is given by F2 – F1. F1 is the lower cut off frequency and
F2 is the upper cut off frequency.

Q - Factor:
In the case of a RLC series circuit, it is defined as equal to the voltage magnification
in the circuit at resonance. At resonance, current is maximum. Io= V/R.

The applied voltage V = IoR

Voltage magnification = VL/V = IoXL

In the case of resonance, high Q factor means not only high voltage, but also higher
sensitivity of tuning circuit. Q factor can be increased by having a coil of large inductance,
not of smaller ohmic resistance.

Q = L / R

PROCEDURE:
1. Connections are made as per the circuit diagram.
2. By varying the frequency and note down the corresponding meter reading.
3. Draw the current VS frequency curve and measure the bandwidth, resonance frequency
and Q factor.

76
RLC Parallel Resonance Circuit:

99mH

1KΩ
0.01μF
1K
F=1 KHz 470Ω CRO
Vi=2V

RLC Series Resonance Circuit:

300mH 0.1μF

F=1 KHz 100Ω CRO

Vi=2V

77
Series Resonance Curve:

I(mA)

Imax E / R

A B
0.707 E/R

B.W

F1 F0 F
f 2(Hz)

Bandwidth B. W = F2 – F1
Resonant Frequency = F0

Parallel Resonance Curve:

I(mA)

A B
0.707 E/R

Imin E / R
B.W
f (Hz)
F1 F0 F2

78
TABULATION:
Series circuit: Parallel circuit:

Input Voltage: V Input Voltage: V

S.No Frequency Output Current S.No Frequency Output Current

(Hertz) Voltage (mA) (Hertz) Voltage (mA)
(V) (V)

Review Questions:
1. Explain series resonance.
2. Define Q factor.
3. What is coefficient of coupling?
4. What is transient response?
5. Briefly explain the series & parallel connection of independent source.

RESULT:
Thus the frequency curve of series and parallel circuits are drawn.

79