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Electronic Device and Circuits Experiment 2

This manual is prepared by Engr. Zulqurnan Anjum

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Zulqurnan Anjum
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31 views6 pages

Electronic Device and Circuits Experiment 2

This manual is prepared by Engr. Zulqurnan Anjum

Uploaded by

Zulqurnan Anjum
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
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Experiment No: 2

ZENER DIODE CHARACTERISTICS

AIM:

1. To plot Volt-Ampere characteristics of Zener diode.


2. To find Zener break down voltage in reverse biased condition.
3. To calculate static and dynamic resistances of the Zener diode in both forward
and reverse biased conditions (before, after break down voltages).

Components:

Name Qty
Zener Diode 1
Resistor 1K 1

Equipment:

Name Range
Breadboard -
Regulated DC power supply 0-30V
Ammeter 0-20mA
Voltmeter 0-20V
Connecting Wires

Specifications:
Breakdown Voltage = 5.1V
Power dissipation = 0.75W
Max. Forward Current = 1A

Theory:

An ideal P-N Junction diode does not conduct in reverse biased condition. A zener
diode Conducts excellently even in reverse biased condition. These diodes operate at a
precise Value of voltage called break down voltage.
A zener diode when forward biased behaves like an ordinary P-N junction diode.
A zener diode when reverse biased can either undergo avalanche break down or
zener break down.
Avalanche break down:-If both p-side and n-side of the diode are lightly doped,
depletion region at the junction widens. Application of a very large electric field at the
junction may
rupture covalent bonding between electrons. Such rupture leads to the generation of a large
number of charge carriers resulting in avalanche multiplication.

Zener breaks down:-If both p-side and n-side of the diode are heavily doped, depletion
region at the junction reduces. Application of even a small voltage at the junction ruptures
covalent bonding and generates large number of charge carriers. Such sudden increase in
the number of charge carriers results in zener mechanism.

Circuit Diagram:
Fig (1) – Forward Bias Condition:

R Izf (0 – 20) mA

1K

Vin V zf (0-3)V
V

0-30V

Fig (2) – Reverse Bias Condition:


R Izr (0 – 20) mA

1K

Vin Vzr (0-20) V


V

0-30V

Procedure:
Forward biased condition:
1. Connect the circuit as shown in fig (1).
2. Vary Vzf gradually steps of 0.1 volts up to 5volts and note down the
corresponding readings of Izf.
3. Tabulate different forward currents obtained for different forward voltages.

Reverse biased condition:


1. Connect the circuit as shown in fig (2).
2. Vary Vzr gradually in steps of 0.5 volts up to 8 volts and note down the
corresponding readings of Izr.

3. Tabulate different reverse currents obtained for different reverse voltages.

Observations:
Si diode in forward biased conditions:

Forward Voltage Forward current


Sl.No RPS Voltage across the diode through the
Vzf (volts) diode Izf (mA)

diode in reverse biased conditions:

Reverse
Reverse current
Sl.No RPS Voltage across
Voltage through the
the diode Vzr
diode Izr (mA)
(volts)

VOLTAGE REGULATION:
LOAD REGULATION CHARACTERISTICS:
1. Connect the Circuit as per the Circuit Diagram on the bread board.
2. By changing the load Resistance, kept constant I/P Voltage at 5V, 10 V, 15 V
as per table given below. Take the readings of O/P Voltmeter (Vo=Vz).
3. Now by changing the I/P Voltage, kept constant load Resistance at 1K, 2K, 3K
as per table given below. Take the readings of O/P Voltmeter (Vo=Vz).

RL1=1K RL2=2K
Vi (V)
VO (V) VO (V)
0
1
3
5
7
9
11
13
15
20

Vi1= 5V Vi2= 10V


S.No RL ()
VO (V) VO (V)
1 100
2 300
3 500
4 700
5 900
6 1K
7 3K
8 5K
9 7K
10 10K
Instructions:
1. Take a graph sheet and divide it into 4 equal parts. Mark origin at the center of
the graph sheet.

2. Now mark +ve x-axis as VZf


-ve x-axis as VZr
+ve y-axis as IZf
-ve y-axis as IZr

3. Mark the readings tabulated for zener diode forward biased condition in first
and Quadrant

Zener diodes reverse biased condition in third Quadrant.

Calculations from Graph:


IZf (mA)

VZr (volts) VZf (volts)

IZr (mA)
Static forward Resistance Rdc = Vzf/Izf
Dynamic forward Resistance rac = Vzf /Izf
Static Reverse Resistance Rdc = Vzr / Izr
Dynamic Reverse Resistance rac = Vzr/Izr

Precautions:

1. While doing the experiment do not exceed the ratings of the diode. This may lead
to damage the diode.
2. Connect voltmeter and Ammeter in correct polarities as shown in the circuit diagram.
3. Do not switch ON the power supply unless you have checked the circuit connections as
per the circuit diagram.

Inference:

1. In the forward biased mode the zener diode operates as a p-n diode.
2. In the reverse biased mode zener diode has large breakdown voltage and though
the current increases the voltage remains constant. Thus it acts as a voltage
regulator.

Result:

a. The zener diode characteristics have been studied.


b. The zener resistance at the breakdown voltage was found to be = ………

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