Hall Effect

Name : Abhishek Joshi

Course: I.PhD. Physics
Roll No : 230501

August 27, 2024

Contents

1 Aim : To find Hall coefficient, Charge density and Mobility of a semicon-

ductor sample 2

2 Apparatus 2

3 Theory 2

4 Formula 3

5 Observation & Calculations 3

5.1 Calibration of Magnetic field . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
5.2 Voltage as a function of sample current . . . . . . . . . . . . . . . . . . . . . 3

6 Error Analysis 6

7 Result 6

8 Precautions 7

page 1
1 Aim : To find Hall coefficient, Charge density and
Mobility of a semiconductor sample
2 Apparatus
• Hall effect control unit, Hall effect cartridge, Digital Gauss meter, Gauss probe mount,
Electromagnet, Electromagnet Power Supply, Connecting Cable, AC Power Code

3 Theory
Semiconductor: Semiconductors are amorphous or crystalline solids that have a conduc-
tivity between that of a conductor and an insulator, either due to the presence of an impurity.
They are mainly classified into two types as follows:
• Intrinsic Semiconductor
• Extrinsic semiconductor

Hall Effect: When a current-carrying rectangular slab of a semiconductor is placed in a

magnetic field B perpendicular to the direction of the current IH and a transverse electric
field EH . The charge carriers experience a force due to the external magnetic field, known
as the Lorentz force, and they will be accelerated towards one side of the current-carrying
conductor but will be trapped inside the conductor. This produces a potential difference VH ,
known as Hall voltage, in a direction perpendicular to both applied electric and magnetic
fields.

Figure 1: Hall Effect

The sign of the Hall coefficient is determined by the polarity of the charge carriers. A
negative sign implies carriers with a negative charge, known as the normal Hall effect, while
a positive sign indicates carriers with a positive charge, known as the anomalous Hall effect.
The Hall Effect experiment is primarily used to determine the type of charge carrier in a
semiconducting material. The Hall coefficient depends on the material and the temperature
of the material.

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4 Formula
Hall Coefficient
VH d
RH = × 108 cm3 /coulomb
IH B
108 is multiplied to satisfy the power variation that occurs due to unit conversion.

Carrier Density
1
n= /cm3
RH e

Mobility
µ = RH σ cm2 V olt−1 sec−1

5 Observation & Calculations

• Thickness of the sample (d) = 0.5mm

• Resistivity of sample (ρ)= 10 Ωcm

• Conductivity of the sample (σ) = 0.1 Ω−1 cm−1

• Charge of electron (e) = 1.60 ×10−19 Coulomb

• Temperature of sample = 11o C

5.1 Calibration of Magnetic field

S.
Current (A) Magnetic Flux Density X 10 Gauss
No.
1 0 0
2 0.4 450
3 0.8 960
4 1.2 1490
5 1.6 1970
6 2 2430
7 2.4 2880
8 2.8 3320
9 3.2 3720

5.2 Voltage as a function of sample current

P-Type Semiconductor
• Applied Magnetic flux: 1490 Gauss

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 Voltage without Voltage with
Current
S.No. Magnetic field V Magnetic Field VH ∆V = VH -V
(mA)
(mV) (mV)
1 0 0.4 0.4 0
2 0.4 0.9 1.3 0.4
3 0.8 1.1 1.6 0.5
4 1.2 1.3 1.9 0.6
5 1.6 1.6 2.4 0.8
6 2 2 3.1 1.1
7 2.4 2.3 3.8 1.5
8 2.8 2.5 4.4 1.9
9 3.2 2.8 4.9 2.1
10 3.6 3 5.3 2.3
11 4 3.1 5.6 2.5
12 4.4 3.2 5.6 2.4
13 4.8 3.2 5.6 2.4

Figure 2: Voltage vs Current for P-Type semiconductor

• Slope of the graph between hall current and hall voltage: 0.6454 mV /mA
• Hall coefficient
d 0.6454 × 0.5 × 10−1
RH = slope × 108 = × 108 = 2165.95cm3 /coulomb
D 1490
• Carrier Density
1 1
n= = −19
= 2.88 × 1015 /cm3
RH e 2165.95 × 1.60 × 10

• Mobility
µ = RH σ = 216.59cm2 V −1 sec−1

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N-Type semiconductor
• Applied Magnetic flux: 1490 Gauss

Voltage without Voltage with

Current
S.No. Magnetic field V Magnetic Field VH ∆V =V- VH
(mA)
(mV) (mV)
1 0 0.8 0.5 0.3
2 0.4 9.7 6 3.7
3 0.8 13.2 7.9 5.3
4 1.2 17.3 10.3 7
5 1.6 22.4 13.6 8.8
6 2 30 18.1 11.9
7 2.4 36.1 22 14.1
8 2.8 41.8 25.9 15.9
9 3.2 42.4 26.2 16.2
10 3.6 42.4 26.2 16.2
11 4 42.3 26.2 16.1

Figure 3: Voltage vs Current for N-Type semiconductor

• Slope of the graph between hall current and hall voltage: 5.4404 mV /mA
• Hall coefficient
d 5.4404 × 0.5 × 10−1
RH = slope × 108 = × 108 = 18256.63cm3 /coulomb
D 1490
• Carrier Density
1 1
n= = = 3.4234 × 1014 /cm3
RH e 18256.63 × 1.60 × 10−19

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 • Mobility
µ = RH σ = 1825.66cm2 V −1 sec−1

6 Error Analysis
As RH = (VH /IH )(d/B) so,

∆RH ∆VH ∆IH ∆d ∆B

= + + +
RH VH IH d B
Now, ∆d = 0 and the B has only one value, but VH and IH has a whole range of values so
we need to average out all of the ∆V
VH
H
and ∆I
IH
H
values. so,

PN ∆VH PN ∆IH
!
i=1 ( VH ) i=1 ( IH ) ∆B
∆RH = RH + +
N N B

Where

N= Number of data points we have

∆VH = 0.1mV

∆IH = 0.1mA

∆B = 10 Gauss

P-type semiconductor
 
10
∆RH = 0.000923 + 0.00136 + × 2165.95 = 1.935 × 101 cm3 /C
1490

N-type semiconductor
 
10
∆RH = 0.00280 + 0.001288 + × 18256.63 = 2.03201 × 102 cm3 /C
1490

7 Result
For P-type semiconductor

• Values of

Hall Coefficient is : 2165.95 ± 19.35 cm3 /C

Carrier Density is : 2.88 ×1015 /cm3
Mobility is : 216.59 cm2 V −1 s−1

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For N-type semiconductor

• Values of

Hall Coefficient is : 18256.63 ± 203.201 cm3 /C

Carrier Density is : 3.4234 ×1014 /cm3
Mobility is : 1825.66 cm2 V −1 s−1

8 Precautions
• Handle the Gauss meter probe with care as it is highly fragile.

• Handle the n type and p type germanium crystal cartridges carefully to avoid breakage.

• Switch off the Hall Effect setup after each set of measurements; otherwise, errors will
occur.

• The transducer (Indium Arsenide) is at the tip of the probe, therefore the tip of the
probe should be at the centre of the air gap.

• The crystal in the probe should be at the centre of the air gap without touching poles
pieces.

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