SKiiP 82 AHB 15 MiniSKiiP 8

Absolute Maximum Ratings SEMIKRON integrated

Symbol Conditions 1)
intelligent Power
Values Units
Bridge Rectifier SKiiP 82 AHB 15
VRRM 1500 V half controlled
ID Theatsink = 80 °C 75 A 3-phase bridge rectifier +
IFSM/ITSM tp = 10 ms; sin. 180 °C, Tj = 25 °C 1000 A
I²t tp = 10 ms; sin. 180 °C, Tj = 25 °C 5000 A²s
IGBT braking chopper
IGBT Chopper
VCES 1200 V
Case M8a
VGES ± 20 V
IC Theatsink = 25 / 80 °C 65 / 45 A
ICM tp < 1 ms; Theatsink = 25 / 80 °C 130 / 90 A
Freewheeling Diode 2)
VRRM 1200 V
IF Theatsink = 25 / 80 °C 38 / 26 A
IFM tp < 1 ms; Theatsink = 25 / 80 °C 76 / 52 A
Tj Diode & IGBT – 40 ... + 150 °C
Tj Thyristor – 40 ... + 125 °C
Tstg – 40 ... + 125 °C
Visol AC, 1 min. 2500 V

Characteristics
Symbol Conditions 1) min. typ. max. Units
Diode - Rectifier
VF IF = 75 A Tj = 125 °C – 1,15 – V
VTO Tj = 125 °C – 0,8 – V
rT Tj = 125 °C – 4,5 – mΩ
Rthjh per diode – – 1,0 K/W UL recognized file no. E63532
Thyristor - Rectifier
• specification of temperature
VT IF = 120 A Tj = 25 °C – – 1,8 V
VT (TO) Tj = 125 °C – – 1,1 V
sensor see part A
rT Tj = 125 °C – – 5 mΩ • common characteristics see
Rthjh per thyristor – – 0,9 K/W page B 16 – 4
IGD Tj = 125 °C 5 – – mA
VGT – – 3 V
Tj = 25 °C Options
IGT – – 150 mA
IH – 250 – mA • also available with uncontrolled
Tj = 25 °C
IL – 600 – mA rectifier (called 82 ANB 15)
dv/dtCR 500 – – V/µs • also available with powerful
Tj = 125 °C
di/dtCR – – 125 A/µs chopper, for characteristics
IGBT - Chopper please refer to SKiiP 82 AC 12
VCEsat IC = 50 A Tj = 25 (125) °C – 2,5(3,1) 3,0(3,7) V • also available with full controlled
td(on) VCC = 600 V; VGE = ± 15 V – 44 100 ns rectifier (called 82 ATB 15)
tr IC = 50 A; Tj = 125 °C – 56 100 ns
td(off) Rgon = Rgoff = 22 Ω – 380 500 ns
1) Theatsink = 25 °C, unless otherwise
tf inductive load – 70 100 ns
Eon + Eoff – 13 – mJ specified
2) CAL = Controlled Axial Lifetime
Cies VCE = 25 V; VGE = 0 V, 1 MHz – 3,3 – nF
Rthjh per IGBT – – 0,5 K/W Technology (soft and fast recovery)

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© by SEMIKRON 0698 B 16 – 73
MiniSKiiP 8 SKiiP 82 AHB 15
SEMIKRON integrated Characteristics
intelligent Power Symbol Conditions 1) min. typ. max. Units
SKiiP 82 AHB 15 Diode 2) - Freewheeling
half controlled VF = VEC IF = 25 A Tj = 25 (125) °C – 2,0(1,8) 2,5(2,3) V
3-phase bridge rectifier + VTO Tj = 125 °C – 1,0 1,2 V
rT Tj = 125 °C – 32 44 mΩ
IGBT braking chopper IRRM IF = 25 A; VR = – 600 V – 25 – A
Qrr diF/dt = – 500 A/µs – 4,5 – µC
Eoff VGE = 0 V, Tj = 125 °C – 1,0 – mJ
Case M8a Rthjh per diode – – 1,2 K/W
Temperature Sensor
RTS T = 25 / 100 °C 1000 / 1670 Ω
Mechanical Data
M1 case to heatsink, SI Units 2,5 – 3,5 Nm
Case mechanical outline see pages M8a
B 16 –13 and B 16 – 14

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B 16 – 74 0698 © by SEMIKRON
 IC [A] 32NA1201.vpo
100

17V
80
15V

13V

60 11V

9V

40 7V

20

0
0 1 2 3 4 5
VCE [V]

Fig. 1 Typ. output characteristic, tp = 80 µs; 25 °C Fig. 2 Typ. output characteristic, tp = 80 µs; 125 °C

Tj = 125 °C Tj = 125 °C
VCE = 600 V VCE = 600 V
VGE = ± 15 V VGE = ± 15 V
RG = 22 Ω IC = 50 A

Fig. 3 Turn-on /-off energy = f (IC) Fig. 4 Turn-on /-off energy = f (RG)
VGE [V] 32NA1205 C [nF] 32NA1206
20 100
ICpuls = 50 A VGE = 0 V
18 600V 800V
f = 1 MHz
16

14
10
12

10 Ciss

8
1
6
Coss
4

2 Crss

0 0,1
0 100
www.DataSheet4U.com 200 300 400 0 10 20 30 40
QG [nC] VCE [V]

Fig. 5 Typ. gate charge characteristic Fig. 6 Typ. capacitances vs. VCE

© by SEMIKRON 0698 B 16 – 75
Fig. 7 Gate trigger characteristics

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B 16 – 76 0698 © by SEMIKRON
MiniSKiiP 1200 V
ICop / IC
Mini1207
1.2
Tj = 150 °C
VGE = ≥ 15 V
1.0

0.8

0.6

0.4

0.2

0
0 25 50 75 100 125 150
Th [°C]
Fig. 7 Rated current of the IGBT ICop / IC = f (Th)
ICpuls/IC Mini1209 ICsc/ICN Mini1210
2,5
Tj = ≤ 150 °C 12
Tj = ≤ 150 °C
VGE = ± 15 V VGE = ± 15 V
10
tsc = ≤ 10 µs
2 Lext < 25 nH

8
1,5 Note:
*Allowed numbers of
short circuit:<1000
6
*Time between short
circuit:>1s
1
4

0,5
2

0 0
0 500 1000 1500 0 500 1000 1500
VCE [V] VCE [V]

Fig. 9 Turn-off safe operating area (RBSOA) of the IGBT Fig. 10 Safe operating area at short circuit of the IGBT

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Fig. 11 Typ. freewheeling diode forward characteristic Fig. 12 Forward characteristic of the input bridge diode

B 16 – 4 0698 © by SEMIKRON
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MiniSKiiP 8
Input bridge part

SKiiP 82 ANB 08 Circuit ANB

SKiiP 83 ANB 08 Case M8a
SKiiP 81 ANB 15
SKiiP 82 ANB 15
SKiiP 83 ANB 15
SKiiP 83 AHB 15
SKiiP 83 ATB 15
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MiniSKiiP 8 Circuit AHB

Input bridge part

SKiiP 82 ANB 08 Case M8a

SKiiP 83 ANB 08 Layout and connections for the
SKiiP 81 ANB 15 customer’s printed circuit board
SKiiP 82 ANB 15
SKiiP 83 ANB 15
SKiiP 83 AHB 15
SKiiP 83 ATB 15 Circuit ATB

Connection
Pin
Diode bridge ANB Halfcontrolled AHB Thyristor bridge ATB
1 reserved reserved G2 Bot
2 ~1 ~1 ~1
3 ~2 ~2 ~2
4 reserved reserved G1 Bot
5 reserved G2 Top G2 Top
6 ~3 ~3 ~3
7 reserved G1 Top G1 Top
8 reserved G3 Top G3 Top
9 reserved reserved G3 Bot
10 + + +
11 – – –
12 + + +
13 – – –
14 Gate Br Gate Br Gate Br
15 Br Br Br
16 T+ T+ T+
17 T– T– T–