PhilipsSemiconductors Productspecification

Triacs BT136series

GENERALDESCRIPTION
QUICKREFERENCEDATA
Glasspassivatedtriacsinaplasti SYMBOL PARAMETER MAX.MAX.MAX.UNIT
c
envelope, intended BT136- 500 600 800
for use in BT136- 500F 600F 800F
applications requiring BT136- 500G 600G 800G
high VDRM Repetitivepeakoff-state 500 600 800 V
bidirectionaltransientandblock voltages
ing IT(RMS) RMSon-statecurrent 4 4 4 A
voltagecapabilityandhighther ITSM Non-repetitivepeakon-state 25 25 25 A
mal current
cyclingperformance. Typical
applicationsincludemotorcontr
PINNING-TO220AB
ol, PINCONFIGURATION SYMBOL
industrial
PIN and
DESCRIPTION domestic tab
lighting,
heatingandstaticswitching.
1
mainterminal1 T T
2 1
2
mainterminal2
G
3 tab gate
1
2
mainterminal2 3

LIMITINGVALUE
LimitingvaluesinaccordancewiththeAbsoluteMaximumSystem(IEC
S
134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500 -600 -
VD Repetitivepeakoff- - 800 V
RM
state 5001 6001
800
IT(R RMSon-statecurrent
voltages fullsinewave;Tmb≤107˚C
MS) Non-repetitivepeak fullsinewave;Tj=25˚Cpriorto - 4 A
ITSM
on-statecurrent surge
t=20ms - 2 A
t=16.7ms - 5 A
I2tforfusing t=10ms - 2 A2s
I2t Repetitiverateofriseof ITM=6A;IG=0.2A;
dIT/ 7
dt on-statecurrentafter dIG/dt=0.2A/µs
3
triggering T2+G+ - . A/
T2+G- - 1 µs
T2-G- - A/
T2-G+ - µs
Peakgatecurrent - 5 A/
IGM Peakgatevoltage - 0 µs
VGM Peakgatepower - 5 A/
PGM Averagegatepower overany20msperiod - 0 µs
PG(A Storagetemperature - 5 A
V) Operatingjunction 4 0 V
Tstg temperature 0 1 W
Tj - 0 W
2 ˚C
5 ˚C
5
0
.
1Althoughnotrecommended,off- 5
statevoltagesupto800Vmaybeappliedwithoutdamage,butthetriacmay 1
switchtotheon-state.Therateofriseofcurrentshouldnotexceed3A/µs. 5
0
1
August1997 1 Rev1.200 2
5
PhilipsSemiconductors Productspecification

Triacs BT136series

THERMALRESISTANC
ES CONDITIO MIN. TYP. MAX.
Rthj-
SYMBOL PARAMETER
Thermalresistance NS
fullcycle UNIT
- - 3.0
mb
junctiontomountingbasehalfcy - - K/W
Rthj- cle - 6 3.7
a Thermalresistance infreeair 0 K/W
junctiontoambient -
K/W
STATICCHARACTERISTI
CS
Tj=25˚Cunlessotherwisestated
CONDITIO MIN. MA UN
SYMBOL PARAMETER NS BT136- TYP. . X.
.. ...G IT
I Gatetriggercurr VD=12V;IT=0.1A
G . .
T ent T2+G+ - 5 . F 50
T2+G- - 8 mA
T2-G- - 1 3 2 50
T2-G+ - 1 5 5 mA
VD=12V;IGT=0.1A 3 50
3 2
I Latchingcurren T2+G+ - 0 5 5 mA
L
t T2+G- - 3 2 100
T2-G- - 7 5 5 mA
T2-G+ - 1 7 7
VD=12V;IGT=0.1A - 6 30
0 0
V On-statevoltage IT=5A - 5 1. mA V
IT 7 45
H Gatetriggervoltage
Holdingcurrent VD=12V;IT=0.1A 1.4 2 72 V
V VD=400V;IT=0.1A; 5 mA
GT - 0 00 V
Tj=125˚C 0.7 3 3
1. 30
Off-stateleakagecurrent VD=VDRM(max); 0.25 0 50 mA m
ID Tj=125˚C 0.4 2 -2 45 A
0 0 mA
- 3 3
0. 30
DYNAMICCHARACTERISTI 0.1 0 50 mA
CS 1 1
Tj=25˚Cunlessotherwisestated 5 5
CONDITIO MI TYP. MAX.
SYMBOL BT136- PARAMETER NS .. N.
.. ...G UNIT
dVD/dt Criticalrateofriseof VDM=67%VDRM(max); . . 200 - V/
off-statevoltage Tj=125˚C;exponential
1 F 250 µs
waveform;gateopen 0 5
circuit 0 0
dVcom/dt Criticalrateofchangeof -
VDM=400V;Tj=95˚C;
commutatingvoltage IT(RMS)=4A; 10 V/
dIcom/dt=1.8A/ms;gate 50 µs
opencircuit - -
tgt Gatecontrolledturn-on ITM=6A;VD=VDRM(max); -
time IG=0.1A;dIG/dt=5A/µs
- 2 µs
- -

August1997 2 Rev1.200
PhilipsSemiconductors Productspecification

Triacs BT136series

Ptot/ BT Tmb(max)/C IT(RMS)/ BT

8 13
5 A 13
W
6 101 6
7 1
10
0 4 7C
6 1
4
=18
0
5 1
3
120 0
4 7
90
60 2
3 1
30 1
2 0
1
1 1
1
0 13 0
0 1 2 4 2 - 50 0 1 1
3 51 5 Tmb 0 5
0
Fig.1.Maximumon- IT(RMS)/ 51
Fig.4.MaximumpermissiblermscurrentI
/C 0 0
T(RM
statedissipation,P ,versusrms tot A 6 S) ,
on-
statecurrent,IT(RMS),whereα=conductionangle.
1
1
versusmountingbasetemperatureTmb.
9
1000ITSM/A BT136 12IT(RMS)/A BT136
1
2
IT ITSM 10
2

T
time 8
Tjinitial=25Cma
100 6 x
dI/
dtlimit
T 4
T2-
G+quadrant
2

10 0
10 10 1 1 10 0 0.1 1
us 0u m 0 0m .
s s m s 0
surgeduration/s
Fig.2.Maximumpermissiblenon- T s Fig.5.Maximumpermissiblerepetitivermson-
1

repetitivepeak / state
on-statecurrentITSM,versuspulsewidthtp,for s currentIT(RMS),versussurgeduration,forsinusoid
sinusoidalcurrents,tp≤20ms. al
currents,f=50Hz;Tmb≤107˚C.

ITSM/ BT VGT(Tj)
A 13 VGT(25 BT
1 13
6 C)
I IT . 6
T SM 6
T
ti 1
2 Tjinitial=25Cmax m 1.
.
0
e 2
4

1
1
5

0.
1 8
0

0.
5 10 100 1 6 0 50 1 1
Numberofcyclesat50Hz 0 Tj/ 0 5
0 C 0 0
Fig.3.Maximumpermissiblenon-
0
0
0. Fig.6.Normalisedgatetriggervoltage
repetitivepeak VGT4 (Tj)/
on-
1 VGT- (25˚C),versusjunctiontemperatureTj.
statecurrentITSM,versusnumberofcycles,for 50

sinusoidalcurrents,f=50Hz.

August1997 3 Rev1.200
PhilipsSemiconductors Productspecification

Triacs BT136series

IGT(Tj) 12IT/A BT136

IGT(25C) BT136
3

10
2.5 T2+
G+
8
2 T2+
G-
6
1.5

1 4

0.5 G- 2
T2-
T2-
0 G+
0
-50 0 50 100 150 0 0.5 1 1.5 2
Tj/C 2.5 3
Fig.10.Typicalandmaximumon-
VT/V

Fig.7.Normalisedgatetriggercurrent statecharacteristic.
IGT(Tj)/
IGT(25˚C),versusjunctiontemperatureTj.
IL(Tj) Zthj- BT
IL(25 TRI mb(K/W) 13
3 C) AC 6 unidirecti
onal
2
. bidirectio
5 nal

2
1
.
5 0 P
D
t
p
.
1
1
0.5 t

0.01
0 10us 0.1ms 1ms 1
- 0 50 1 1 10ms 0.1s 1s
5 Tj/ 0
0 5 s
Fig.8.NormalisedlatchingcurrentI
0 C 0 L(Tj)/ 0 Fig.11.TransientthermalimpedanceZ
tp/s thj-
IL(25˚C), mb,versus
versusjunctiontemperatureTj. pulsewidthtp.

IH(Tj dVcom/
1
) TRI dt(V/us)
3 0
IH(2 AC off-statedV/
0
5C) 0 dtlimit
2
BT136...GSERIES
.
5
BT136SERIES

2 1
1 BT136...FSERIES
0
.
0
5

1
0
dIcom/dt=5.1 3 2 1 1
.
3.9 . . .
5
0 A/ms 3 8 4
- 0 50 1 1 1 1
5 Tj/ 0 5 Tj/ 0 5
0
Fig.9.NormalisedholdingcurrentI (Tj)/ C 0H 0
Fig.12.TypicalcommutationdV/ C 0 0
IH(25˚C),
versusjunctiontemperatureTj. dtversusjunction
temperature,parametercommutationdIT/
dt.Thetriac
shouldcommutatewhenthedV/
dtisbelowthevalue
ontheappropriatecurveforpre-
commutationdIT/dt.
August1997 4 Rev1.200
PhilipsSemiconductors Productspecification

Triacs BT136series

MECHANICALDAT
A

Dimensionsinmm 4,
5
NetMass:2g m
ax
10,3
1,3
max

2,8
3,7

5,9
3,0max min
3,0
nottinned
13,5
min
1,3
max 15,8
(2x) 0,9max(3x) max
123

2,542,5
4

0,6
2,4
Fig.13.TO220AB;pin2connectedtomountingbase.
Notes
1.RefertomountinginstructionsforTO220envelopes.
2.EpoxymeetsUL94V0at1/8".

August1997 5 Rev1.200
PhilipsSemiconductors Productspecification

Triacs BT136series

DEFINITIONS
Datasheetstatus
Objectivespecification
Thisdatasheetcontainstargetorgoalspecificationsforproductdevelopment.
PreliminaryspecificationThisdatasheetcontainspreliminarydata;supplementarydatamaybepublishe
Productspecification
dlater.
Thisdatasheetcontainsfinalproductspecifications.
Limitingvalues
LimitingvaluesaregiveninaccordancewiththeAbsoluteMaximumRatingSystem(IEC134).Stressaboveo
ne
ormoreofthelimitingvaluesmaycausepermanentdamagetothedevice.Thesearestressratingsonlyand
operationofthedeviceattheseoratanyotherconditionsabovethosegivenintheCharacteristicssectionsof
thisspecificationisnotimplied.Exposuretolimitingvaluesforextendedperiodsmayaffectdevicereliability
.
Applicationinformation
Whereapplicationinformationisgiven,itisadvisoryanddoesnotformpartofthespecification.
PhilipsElectronicsN.V.1997
Allrightsarereserved.Reproductioninwholeorinpartisprohibitedwithoutthepriorwrittenconsentofthe
copyrightowner.
Theinformationpresentedinthisdocumentdoesnotformpartofanyquotationorcontract,itisbelievedtob
e
accurateandreliableandmaybechangedwithoutnotice.Noliabilitywillbeacceptedbythepublisherforan
y
consequenceofitsuse.Publicationthereofdoesnotconveynorimplyanylicenseunderpatentorother
industrialorintellectualpropertyrights.

LIFESUPPORTAPPLICATIONS
Theseproductsarenotdesignedforuseinlifesupportappliances,devicesorsystemswheremalfunctionoft
hese
productscanbereasonablyexpectedtoresultinpersonalinjury.Philipscustomersusingorsellingthesepro
ducts
foruseinsuchapplicationsdosoattheirownriskandagreetofullyindemnifyPhilipsforanydamagesresultin
g
fromsuchimproperuseorsale.

August1997 6 Rev1.200