Microelectronics Journal 140 (2023) 105951

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Microelectronics Journal
journal homepage: www.elsevier.com/locate/mejo

A comprehensive review of AlGaN/GaN High electron mobility transistors:

Architectures and field plate techniques for high power/ high
frequency applications
J.S. Raj Kumar a, b, H. Victor Du John a, Binola K Jebalin I.V a, J. Ajayan c, Angelin Delighta A a,
D. Nirmal a, *
a
Department of Electronics and Communication Engineering, India
b
Department of Computer Science and Engineering, Karunya Institute of Technology and Sciences, Coimbatore, India
c
Department of Electronics and Communication Engineering, SR University, Warangal, Telangana, India

A R T I C L E I N F O A B S T R A C T

Keywords: AlGaN/GaN High Electron Mobility Transistor (HEMT) frequently employs field plate techniques to improve the
GaN device’s reliability and optimum performance. This literature review investigates the effects of field plate-
AlGaN/GaN engineered GaN-based High Electron Mobility Transistors (HEMTs) on RF applications, specifically focusing
HEMT
on elevated breakdown and cut-off frequency. The study comprehensively examines various field plate designs
Fieldplate
employed in HEMTs, highlighting their significant contributions. The research explores three primary and six
Breakdown voltage
GaN power devices secondary types of field plates, each operating on distinct principles to enhance device parameters. For instance,
gate, drain, and source-type field plates in GaN-based HEMTs can imprcove breakdown, power and output
resistance. These field plate techniques influence device stability, specific resistance and ensure uniform electron
flow across terminals. Moreover, the implementation of a drain field plate improves power application perfor­
mance by reducing the impact ionization rate. The utilization of field plate techniques in GaN-based High
Electron Mobility Transistors (HEMTs) offers several benefits, including the minimization of parasitic effects and
the reduction of the source-to-gate region without significantly impacting the device’s breakdown voltage.

1. Introduction device’s stability, effectiveness, and dependability [12–14] (see

Table 4).
In earlier, group III-V semiconductors were prominently used in Due to the special wide-bandgap characteristics of Gallium Nitrate
electrical systems for trains, electric cars, power transmission and other HEMTs which are well suited to RF and high-power applications. Due to
applications requiring high power and high switching frequencies the stronger breakdown field and drain current, GaN with a larger
together with high power off-state and off-power ON-state for effective bandgap serves as a promising material for MMICs and RF amplifiers
switching, are used to create the first-ever indigenous HEMT devices. [15–17]. In HEMT, the first investigation into the mobility of free-charge
For the past two decades, this action has been provided by a specialised carriers took place in 1969 [18]. The first Radio Frequency device model
transistor called High Electron Mobility Transistor (HEMT) [1–5]. was widely available for projects in 1980 [19]. Starting in that year, it
Various methods were applied in the semiconductor industry based on was used, with the original astronomical cost acting as a compromise.
the usage of HEMTs. As Compared to conventional transistors made with Due to its cheaper cost, it was frequently used in Radio Frequency ap­
silicon, the semiconductor construction of aluminium gallium nitride/­ plications such as radar, radio astronomy, cellular telephony and direct
gallium nitride (AlGaN/GaN) in HEMT device has an advantage since it broadcast receivers. RF applications that require a balance of low noise,
enables very high voltage operation, quick switching and small device high power and high frequency widely make use of HEMT devices in
size [6–11]. AlGaN/GaN HEMTs that are readily accessible on the their architecture. Although they are still available, discrete HEMT
market employ various methods, such as the cascode approach, etc., to transistors are increasingly being used in compact devices [20–24].
maintain the transistor’s typical OFF state, This has an impact on the MMICs are integrated circuits that are frequently used to build RF

* Corresponding author.
E-mail address: dnirmalphd@gmail.com (D. Nirmal).

https://doi.org/10.1016/j.mejo.2023.105951
Received 26 July 2023; Received in revised form 2 September 2023; Accepted 10 September 2023
Available online 12 September 2023
1879-2391/© 2023 Elsevier Ltd. All rights reserved.
J.S. Raj Kumar et al. Microelectronics Journal 140 (2023) 105951

circuit models that need to function at a high level. Future high-power

applications hold great promise for HBTs and HEMTs. The HEMTs and
HBTs architectures conveniently have power densities that are threefold
higher than MESFETs and hence require a smaller chip area. Due to RF
and DC performance improvements in recent years, HEMT devices are
currently available in a range of material compositions (InP, GaAs,
GaN). The production of two-dimensional electron plasma with excep­
tionally high carrier mobility is a special characteristic of HEMT [25,
26]. It was built utilising heterostructures, or various materials with
various bandgaps. The buffer layer is utilised to correct a lattice
mismatch that occurs among two crystal forms [27–29]. Passivating the Fig. 1. Schematic cross-section of AlGaN/GaN HEMT with field-plate.
HEMT device will reduce the noise and leakage current at the gate ter­
minal and ii) improve the ON current of the HEMT device. HEMT de­ There are two types of basic field plate (FP) available namely normal
vices have an extensive range of utilities that includes power amplifiers FP and intermittently connected FP depicted in Fig. 2. The field plate
for guided missiles, satellite communication systems, wireless commu­ impacts the electric field distribution which assists in diminishing the
nication and radars. peak value of the electron distribution across the channel that is carried
Single Heterostructure HEMT and Dual Heterostructure HEMT are on by the gate electrode at the drain terminal. Correspondingly, the
the two broad categories for HEMT. Frequency, breakdown voltage, and impact enhances the HEMT’s power performance and breakdown
power are the three main factors that are examined in HEMT devices voltage.
[30–32]. Gate scaling, Schottky and ohmic conduct, T-shaped gates, and Minimization of High-field trapping effect is another advantage of
fieldplate techniques are some of the several methods employed in the employing fieldplate mechanism in HEMTs. The field plate tends to
HEMT device [26–29,33]. Now each structure’s functional principles, lower the electron mobility at the gate on the drain side edge, which
advantages, and disadvantages are thoroughly outlined. suppresses electron trapping and electron emission. From this impact, it
Table 1 details the competitive benefits of amplifiers and GaN de­ improves in reducing the current collapse effect in transistor. Field plate
vices for trading benefits. The requisite performance benchmarks for structures influence HEMTs’ noise performance in addition to their
several electrical device implementations are listed in the first column, power performance. To suppress the E-Field distribution at the AlGaN
and the permitted attributes of GaN-based devices that fully satisfy surface layer in this study, the field plate is made as an extension to­
particular requirements are listed in the second column. GaN devices wards the drain side from the gate terminal and is deposited onto the
outperform traditional technologies in every single category [34]. The passivation layer. This causes the DC-to-RF dispersion to decrease,
final column lists the operational advantages brought forth by the sys­ raising the VBR in the process. One of the key effects that must be taken
tem and customer levels. into account for high-power devices is the self-heating effect because
Researchers recently created a new type of HEMT with a Field Plate power characteristics are greatly reduced for GaN-based HEMTs. The
(FP) mechanism that is projected above and together with the gate thermal resistance of the device rises as the power density increases.
terminal. The primary reason this fieldplate technique is used in HEMTs Field plates are introduced to the picture to minimize this impact. Field
is to raise the breakdown voltage [35]. For applications requiring high plate configurations can reduce thermal resistance, which enhances
power and high-frequency operations, fieldplate techniques are HEMT power performance [38].
increasingly common in this industry [36]. This article covers the
various fieldplate techniques and their electrical properties. Fieldplate
3. Different types of field plate
techniques come in a variety of forms, including source, gate, drain,
floating, slant, and discrete. Fieldplates are used in the Drain, Source and
Future power devices are expected to benefit greatly from an AlGaN/
Gate terminals of HEMT devices which tend to raise drain voltage and to
GaN-based HEMT as it has increased saturation drain compound, high
produce a uniform distribution of space charges in the lateral direction.
breakdown voltage, and lower ON-resistance (RON). However, it is
In HEMT devices, the breakdown field strength is increased using field
thought that enhanced dynamic RON via the current collapse method is
plate techniques. The device’s spike currents will be stopped by
one of the most significant problems that has to be overcome for genuine
spreading the electric field evenly across the scale of the apparatus.
power-switching applications. It has been stated that several methods,
Airbridge field plates are currently considerably enhancing the break­
including surface passivation, surface charge management including a
down field intensity of HEMTs [37].
GaN cap layer, and field plate (FP) structure, are efficient ways to pre­
vent current collapses [39]. Under electrical stress, dual discrete
2. Working of field plate
field-plate and single discrete field-plate improve the performance of
AlGaN/GaN HEMT. Field plates come in a various architectures
The field plate technique used the metal-organic Chemical Vapour
including Gate fieldplates, Source fieldplates, Drain fieldplates, Vertical
Deposition (CVD) method to create the AlGaN/GaN HEMT epitaxy
fieldplates, Air bridge fieldplates, Discrete fieldplates, Air-bridge
structure on sapphire. Undoped Al0.25 Ga0.75 N layers of 30 nm thick and
recessed source fieldplates (RSFP), Slant fieldplates, Dual fieldplates
an undoped GaN buffer measuring 3 m thick make up the structure. The
and more.
values of Hall mobility and sheet carrier density were 1013 cm− 2 and
1300 cm2V− 1s− 1 respectively. Fig. 1 depicts a schematic cross-section of
the AlGaN/GaN HEMT with a field-plate. 3.1. Gate Fieldplate technique

Fig. 3 illustrates how the field plate of an AlGaN/GaN HEMT on a

Table 1 semi-insulating SiC substrate is connected to the gate and extended to­
Tabulation of competing material properties in power electronics.
wards the drain side of the HEMT device [40–54]. The primary function
Material μ (cm2/Vs) ℇ Eg (eV) JEM Ratio Tmax of the field plate is to restructure the electric field distribution and
Silicon 1300 11.4 1.1 1.0 300 ◦
C reduce its greatest value on the outflow side of the gate edge. This not
Gallium Arsenide 5000 13.1 1.4 3.5 300 ◦
C only increases the breakdown voltage but also reduces the high field
Silicon Carbide 260 9.7 2.9 60 600 ◦
C trapping of electrons, thereby increasing the current-voltage amplitude
Gallium Nitride 1500 9.5 3.4 80 700 ◦
C
at higher frequencies. As a result of field plate construction tradeoffs,

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J.S. Raj Kumar et al. Microelectronics Journal 140 (2023) 105951

Fig. 2. Types of basic field plate (FP).

Fig. 4. GaN field-plated HEMT structure with Gate fieldplate [47].

Fig. 3. Schematic cross-section of the Gate field-plated AlGaN/GaN
HEMT [42]. field plate is present. There are fewer delays and operational break­
downs are in reports [86–92].
gate-drain capacitance decreases at low voltage while gate-drain
depletion duration increases at high voltage. In another study
3.2. Source FieldplateTechnique
[55–59], it was demonstrated that the high-k passivation layer reduces
the flow of an electron at the drain side of the gate terminal, resulting in
Fig. 5 shows a cross-sectional schematic view of a Gallium Nitride-
a higher breakdown voltage, particularly in devices with relatively short
based HEMT source [93]. The Source fieldplate (S-FP) technique ex­
field plates.
tends its field plate length starting at the source terminal of the device to
Medium-length field plates have a more constant electric field profile
the edge of the drain side [94]. The source’s field plate technique is
from the drain to the plate’s edge, which tends to increase the break­
frequently used in aggregation with the gate field-plate technique in
down voltage for high-k passivation layers. Increasing the length of the
GaN-based HEMTs to achieve a large increase in off-state breakdown
field plate towards the drain terminal improves the power characteris­
voltage VBD. The diagram above depicts the S-FP technique structure.
tics of GaN-based transistors with high electron mobility, as demon­
100 nm were chosen as the gate thickness for the connection between
strated in Refs. [60–65]. This article states that the maximum output
S-FP in the HEMT without the Gate FP. S-FP and G-FP both have an
power density is 5.2 W/mm with a gate length of 0.6 μm and a field plate
impact on VBD and the FP-S edge’s electric field is stronger than the G-FP
length of 0.5 μm.
edges. As a result, to get a similar effect of FP changing the electric field,
In addition, at operating frequencies of 8 GHz, a gain of 11.4 db and a
the S-FP has to be closer to the AlGaN surface. Also, the electric potential
power-added efficiency of 33% were achieved. With the implementation
difference is inversely proportional to the electric field and may be
of field plate construction, both current decay and gate leakage current
calculated from the density of the potential line distribution. Thus, the
are simultaneously minimised, resulting in a significant improvement in
narrower potential lines correlate with the bigger electric field. Even at
microwave power performance. According to the articles [66–70],
higher drain voltage, the G-FP edge’s potential line distributions are less
fieldplate architecture can increase the breakdown voltage of a device
congested than those of the S-FP edge, which is consistent with the
by reducing the peak performance electric field value and increasing the
breakdown voltage by modulating the field distribution between the
drain terminal and the gate terminal.
Fig. 4 depicts the structure of a GaN field-plated HEMT with a Gate
Fieldplate [71–79]. Changing the field plate’s length has a substantial
effect on the grid field plate device’s breakdown voltage. A device’s
breakdown voltage rises abruptly from 0 μm to a maximum of 2 μm and
then declines sharply as its length increases. The breakdown voltage of
690 V (Ids = 2 mA) and 730 V (Ids = 5 mA) for field plate lengths between
1.25 and 2.5 μm. Numerous FPs over insulators are particularly effective
at increasing the device’s breakdown voltage without dispersion. In
order to diminish the electric field at the drain margin of the gate, it
consequently decreases the current breakdown [80–85]. As expected,
deep acceptor density increases with increasing deep acceptor density in
the absence of a field plate, but, remarkably deep acceptor density de­ Fig. 5. Schematic cross-section of the AlGaN/GaN Source field plate tech­
creases with increasing discharge delay and current breakdown when a nique [15].

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J.S. Raj Kumar et al. Microelectronics Journal 140 (2023) 105951

electric field’s distributions. In another way, when the structure has a

single fieldplate, G-FP is more effective at raising VBD than S-FP [95–97].

3.3. Source and Gate Connected technique

Fieldplate mechanism enhances the capacitance of the gate-drain

(Cgd) and drain-source (Cds) by adding the gate-connected FP (GCFP)
and the source-connected FP respectively. HEMT has a low unit current
gain frequency (fT). The breakdown performance of HEMT symbolizes
enhanced voltage, linearity, stability, dependability, and efficiency.
When the FP is incorporated into the HEMT, the breakdown voltage is
raised and the leakage current at the gate is lowered. Fig. 6 shows the
structure of Dual Field-Plate Power GaN HEMT [98–101].
The field plate AlGaN/GaN HEMT capacitance model, which is an Fig. 7. Structure of Cross-Coupling HEMTs with gate and source field
improved physics-based model in terms of the cross-coupling phenom­ plate [113].
enon and analyses the capacitance caused by the substrate electrodes.
Multiple electrodes are utilised in the field cage scheme. To control the
electric field over the active region of the device, the transistors are
biased proportionally to their lateral gate-to-drain coordinates. The
active region’s electric field spikes are managed by this structure
[103–105]. It is shown that the electric field in the active zone remains
consistent over the increment of voltage at the source to the drain ter­
minal. The above increment shows that the field cage theory for scaling
breakdown voltage is a sound one. Fig. 7 shows the structure of
Cross-Coupling GaN HEMTs with gate and source field plate [106–110].
From DC bias to ramps, field cage constructions attain exceptional
electric field control [111]. The field cage works similarly to conven­
tional field plate techniques for electric field management in HEMTs in
that a gate field plate (GFP) and a source-connected field plate (SCFP)
are utilised in conjunction. A Voltage Divider Field Plate (VDFP) and an
impedance network are added to the device between the Source
Fig. 8. Structural view of Field Cage GaN HEMT.
Connected-FP and the drain in this advanced arrangement, resulting in a
more linear potential drop between the gates [112]. It is distinct from
the typical GFP with SCFP implementation as well. From this corre­ electrons are trapped, a new electric field is produced that depletes the
spondence, the electric field of the 2DEG channel becomes much more 2DEG during the conduction phase. The FP can decrease the electric
uniform. field and prevent electron acceleration in addition to a superior
Field plates are linked to gate electrodes (gate FP) or source elec­ passivation layer and GaN cap. Power collapse can be prevented by
trodes (source FP) by assigning the electrode bias voltage. Additionally, using FP setups that are tuned to increase VBD [113,116–120].
numerous FPs with the same or distinct biases are used in the design of
GaN HEMTs, which increases VBD. In general, each FP adds a new peak 3.4. Drain FieldplateTechnique
to the electric field. Applying several FPs causes the total depletion area
to grow, resulting in improved breakdown voltage of the device [102, The optimum electric field at the drain terminal is reduced due to the
114,115]. incorporation of a lateral field plate at the drain side that simultaneously
Fig. 8 shows the field cage GaN-based HEMTs. It clearly depicts that rises the breakdown voltage. Breakdown voltage at various gate-drain
each passivation layer’s thickness and dielectric constant have an distances as a function of the length (Lgd) of the lateral field plate. As
impact on the dispersion of the electric field. As a result, it is challenging the length of the field plate increases, the breakdown voltage decreases
to provide general guidelines for building field plate designs. When the significantly. If Lgd is negative, the situation is critical. This effect is
HEMT is turned on with a high voltage block it influences the FP electric diminished as the drift area lengthens. As the length of the field plate
field and helps to overcome current decay as well as improving dynamic increases, the peak of the electric field shifts from the drain contact to
resistance Ron. An intense electric field propels electrons toward the the gate. As the increase in the length of the field plate, the peak field
semiconductor surface during high-voltage blocking. When the relaxes, as illustrated in Fig. 9, resulting in an increase in the breakdown

Fig. 6. Structure of dual field-plate power GaN HEMT [102]. Fig. 9. Schematic of gate and drain FP GaN HEMT

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J.S. Raj Kumar et al. Microelectronics Journal 140 (2023) 105951

voltage and reducing the impact ionization rate, as illustrated in Fig. 9.

In contrast, as the field plate approaches the gate, a significant increase
in the peak electric field at the gate’s boundary. The impact ionization
rate of LFP = 1.5 μm is crucially elevated close to the gate than it is in the
other two cases [121–126]. The production of charge carriers at the gate
is increased by high-impact ionization, which leads to device breakdown
earlier. As the breakdown voltage does not improve past the length of a
specific field plate, this is a severe issue with the design of lateral field
plates. Lgd therefore sets a maximum breakdown voltage restriction.

3.5. Gate and drain connected FieldplateTechnique

It is widely recognized that the peak electric field effect at the gate or Fig. 11. Structural of source, gate and drain FP HEMT
edge of the discharge edge causes the avalanche breakdown of a device
due to the implementation of a dielectric gate and passivation layer of Source and Drain FP GaN HEMT. A n-type conductive Si (111) substrate
Si3N4 [127–129]. Due to the reduction of the original peak electric field of 4-inch with a 25 nm barrier layer made with AlGaN, the device under
at the gate and drain edge and the emergence of new Electric Field peaks test’s epitaxial structure develops. The peak electric field beneath the
at the edge of gate FP (G-FP) and drain FP, the potential and E-Field drain field plate (DFP), which is initiated by the complete draining of
distributions (D-FP) have become more uniform. The Drain-FP improves electrons from GaN cap layer and each channel, is connected to the
performance in power applications despite its infrequent use in com­ impact of dispersion [132]. The passivation procedure, back bias, or
mercial AlGaN/GaN HEMTs and is therefore worthy of further study. surface charge changes the electron distribution, which changes the trap
Fig. 9 depicts a Gate and Drain FP GaN HEMT. It demonstrates good effect’s initial voltage.
clarity, accuracy, and physical clarity into the breakdown characteris­
tics. In optimised surface and buffer doping concentrations, Fe-doped 3.7. Multi-fin fieldplate technique
buffer enhances breakdown with field plate more than C-doped buffer.
According to Ref. [130], Fe-doped buffer breakdown is limited by the In the Influence of Field-Plate Configuration on Power Dissipation in
surface field, whereas C-doped buffer shares a significant portion of the addition to thermal in AlGaN/GaN HEMTs [133] the field plate extends
field. from the gate-source metallization until it overlaps the gate-source gap
In the paper, Novel Drain-Connected Field Plate GaN HEMT Designs and the region above the gate-drain edge, to reduce and redistribute the
for Improved VBD, RON Trade-off and RF PA Performance [131] are regional high field and supply breakdown voltage. Figs. 12 and 13
discussed. The field plate provides constant lateral charge distribution illustrate the Multi-fin FP HEMT and devices with more field plates have
and increases the device’s breakdown voltage. As G-FP, source a more equally distributed power loss profile and less heat generation at
connection field plates and drain connection field plates are used. A the highest locations. Devices with all field plates display better thermal
recent development in tri-gate and tri-drain designs creates an electric performance in contrast to devices with a single gate field plate [134].
field profile at the contacts to demonstrate high breakdown voltage. In At the Drain edge of the Gate terminal, a field plates is provided to
order to improve RF performance, it is also essential to miniaturize the reduce the electric field and thus the electric field current breakdown is
device without sacrificing breakdown voltage. To enhance ON condi­ reduced [135]. Without the field plate, the deep acceptor density in­
tions, gate-connected field plates restrict lateral scaling. creases with the drain delay and current breakdown, but unexpectedly
the drain delay and gate rise with higher deep acceptor density which
3.6. Source and drain field plate technique results in current breakdown.

The transistor employed in this assessment is composed of three field 3.8. Air-bridge recessed source field plate technique
plates: the primary field plate, also known as the gate electrode field
plate (GFP), the second field plate, also known as the source termination Due to the second lower peak being at the boundary of the field plate,
field plate (STFP), and the third field plate which is shown in Fig. 10. The adding a field plate to the device alters the field shape of the new outline
drain electrode is where it is attached. After examining how the drain [136]. Fig. 14 shows the Air Bridge Recessed Source FP AlGaN/GaN
electrode affected the AlGaN/GaN transistor with peak mobility of HEMT. HEMT Devices with incorporated FPs from the airbridge achieve
electrons on the Si substrate’s dynamic switching behaviour, it was a low peak field concentration. HEMT may be able to handle larger drain
discovered that the drain electrode with an added FP significantly voltages based on this indication. Due to its proximity to the 2DEG
enhanced the dynamic ON resistance (dynRON). Fig. 11 shows the channel, the field plate infiltrated with SiN passivation has superior

Fig. 10. Cross section of Source and Drain FP GaN HEMT. Fig. 12. Cross sectional view of Multifin FP HEMT.

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J.S. Raj Kumar et al. Microelectronics Journal 140 (2023) 105951

and to achieve better performance, a tilted electric field plate can be

added [138–140].

3.9. Slant fieldplateTechnique

GaN HEMTs minimize peak electric fields using field plates, which
enables greater voltages to be reached. A layer of metal on top of the
insulating dielectric, parallel to the underlying semiconductor material,
makes up the field plate. Higher voltage performance can be attained by
using many layers of FP and dielectric, but this enumerates complexity
and cost.Fig. 16 shows the Slant FP AlGaN/GaN HEMT.
The advantage of short-gate-period FP systems is a reduction in gate-
to-drain capacitance [6–9,141–143]. Additionally, the short-channel
Fig. 13. Dual source fieldplate AlGaN/GaNHEMT effect affects short-gate-period GaN HEMTs, whether they are inside
the subject-plated gate or the T-gate. Fig. 17 shows the Cascode GaN
HEMTs. Which results in Poor pinch-off behavior and lower output
resistance at peak drain voltage. Dual-gate or cascode devices can
enhance small-signal performance because of the absence of
gate-to-drain capacitance and improved output resistance. Only a small
number of businesses, meanwhile, have introduced double-gate or
cascaded GaN HEMTs with big-signal capability. The dual-gate FETs’
source-drain spacing consists of an RF gate (Vg1) and a DC gate (Vg2). In
comparison to single gate GaN channels, subject-plated gate GaN
HEMTs have demonstrated improvement in small sign benefit big sign
load pull tests. Low gate leakage currents are achievable with this
technology. Si3N4 is utilised for both the passivation layer and the gate
dielectric. The main cause of device avalanche failure is frequently
accepted to be E-Field spikes produced at the gate or drain edge [10,11,
30,144–147].

Fig. 14. Air bridge recessed source FP AlGaN/GaN HEMT 3.10. Discrete or recessed field plate technique

control over the distribution of the surface electric field and can enlarge The discrete field plates are formed from the partial etching of the
the depletion region. Because of this, the device may hold up a greater field plate or by maintaining the spacer distance between the gate and
breakdown voltage while maintaining a similar size. Electrons are the field plate to reduce the capacitance between the S/G region and D/
introduced under the source by the source field plate, producing a trap G region and simultaneously achieving the most significant switching
effect. Deep gate penetration into the buffer region causes early device frequency possible without impacting the device’s breakdown voltage.
failure. Fig. 15 shows the Air Bridge Source FP AlGaN/GaN HEMT. The discrete plate was utilised to evenly spread the Electric field along
High Electron Mobility Transistors (HEMTs) made of nitride semi­ the region of the channel that does not tend to raise the parasitic
conductors work more consistently and have higher breakdown voltages capacitance of the device. When compared to the standard gate FP
at high temperatures. The electric field distribution in the HEMT is HEMT, the discrete plate has a 17% lower peak of an electric field. The
efficiently controlled by air bridge field plates. With the right design, a capacitance over the gate-drain region and gate-source region was
higher voltage can be maintained while reducing the peak electric field decreased to maintain the breakdown voltage and switching frequency.
value. However, a parasitic side effect like greater inter-terminal ca­ Gate-drain capacitance (Cgd) grows significantly as the length of the field
pacity may be added by such a structure. The use of airlift field plates has plate increases, but gate-source capacitance (Cgs), which only includes
been suggested as a means of minimizing some of these impacts. A field minor fringing capacitance, is barely affected. Fig. 18 shows the discrete
plate with an air bridge (AFP) [137] and gate electrodes inclined to or recessed field plate AlGaN/GaN HEMT. A section of the field plate has
increase the blocking voltage of dual channel AlGaN/GaN HEMTs. The been removed or space has been left between the gate and the FP in the
high electric field below the edge of the gate may decrease using AFP, construction (Discrete field plate HEMT) to improve the breakdown
voltage (VBR) and the cut-off frequency (fT).

Fig. 15. Air bridge source FP AlGaN/GaN HEMT Fig. 16. Slant FP AlGaN/GaN HEMT

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J.S. Raj Kumar et al. Microelectronics Journal 140 (2023) 105951

Fig. 17. Schematic view of CascodeGaN HEMTs.

Fig. 19. Breakdown voltage comparison for different field plate.

Air-bridge recessed source FP. This is because the parasitic capacitance

across the junctions is reduced, and the gate resistance and gate
capacitance across the gate terminals are optimised. When compared to
the Source FP, Slant FP, and Air-bridge recessed source FP, Fig. 20b
depicts the variation in cut-off frequency fT for various field plates, with
the Cut off frequency showing the gross value of 187 GHz. This is
Fig. 18. Discrete or recessed field plate AlGaN/GaN HEMT. because the Field Plate is incorporated in the Gate region, which is
suppressed by the higher extrinsic capacitance and additional metalli­
zation effects.
Gate leakage current and current decay are simultaneously reduced
The Drain current comparison for the different Field plates, including
with the introduction of the field plate construction, considerably
Gate FP, Source FP, Gate Source FP, and Source Drain FP, is shown in
enhancing microwave power performance. On the other hand, the
Fig. 20c. The Source Drain FP exhibits an enhanced value of drain cur­
detrimental impacts of greater gate-drain capacity brought on the field
rent as a result of the peak electric field beneath the drain field plate
plates, dual field plate HEMTs have also been created. To maximise
(DFP), which is started by the complete draining of electrons, according
power gain in this configuration, a second field plate linked to the source
to the data given from Tables 2 and 3. The PAE comparison for several
comprises the electric field between the gate and drain. To increase
field plates is shown in Fig. 20d. The efficiency of the device is deter­
power gain, a second field plate is connected to the source in this
mined by the RF input power value, and the greater value of PAE in­
arrangement. It serves as an electric field barrier between the gate and
dicates the larger gain obtained. The Source Field Plate Architecture
the drain. In the paper [32,148–156], additional research based on
yields a higher PAE value. The source field plate edge’s electric field is
embedded floating field plate structures is implemented to increase the
stronger in comparison to the gate field plate edges, leading to a higher
breakdown voltage of HEMTs. With the addition of the floating field
gain, as seen in Fig. 20d
plate, the E-field was reconstructed and the electric field near to the
border of the gate terminal was constructively suppressed. The
5. Factors influencing the field plate GaN HEMT
embedded FP, which uses a very dense 2DEG channel as a gate field
plate, results in a superior surface field distribution and a rise in HEMT’s
It was discovered through investigation of various field-late GaN
breakdown voltage. The drain side edge of the floating field plate is
HEMT types that the breakdown voltage, power, frequency, and appli­
located very close to the drain.
cations have an impact on the performance of high electron transistors
(Table 4).
4. Comparison of different field plate
From the above tables, we have illustrated that adding different field
plates, such as Gate fieldplate, Source fieldplate, Source and Gate Con­
The comparison has been done for different field plate such as gate
nected, Drain fieldplate, Source gate drain fieldplate, Air-bridge
field plate, source field plate, slant field plate, source and drain field
Recessed Source fieldplate, and Slant fieldplate impacts the different
plate, air-bridge recessed source field plate, gate and drain field plate,
properties of the HEMT devices.
gate double field plate, and double field plate based on the reported
In this study, in order to reduce the mobility of electrons at the
data. Fig. 19 shows the breakdown voltage comparison for different field
AlGaN surface a field plate, an extension of the gate is formed by
plate. Based on the reported data, the gate field plate is showing a high
depositing onto the passivation layer towards the drain side. As a result,
breakdown voltage compared to other field plate techniques. Because of
the DC-to-RF dispersion is reduced, which increases the VBR. Since the
its better surface field distribution, there is a huge improvement in the
power characteristics of GaN-based HEMTs are considerably decreased.
breakdown voltage of HEMT. It is also possible to enhance the break­
One of the important consequences that must be taken into account for
down voltage in the source field plate, but since the structure has one
high-power devices is the self-heating effect. The device’s thermal
field plate, the gate field plate usually improves performance.
resistance increases along with the power density of the device. Field
The fMAX comparison for various field plates is shown in Fig. 20a. The
plates are introduced to the area to diminish this effect. Field plate de­
gate field plate improves the RF performance of HEMT compared to the
signs can improve HEMT power performance by lowering thermal
source and drain fieldplate. According to the data stipulated, the graph
resistance.
above illustrates how the Gate field plate device exhibits the maximum
Field plate-based HEMT devices are a concept that is done mainly to
frequency of 400 GHz when compared to the Source FP, Slant FP, and

7
J.S. Raj Kumar et al. Microelectronics Journal 140 (2023) 105951

Fig. 20. afMAX comparison for different field plate. bfT comparison for different field plate. cDrain current comparison for different field plate. dPAE comparison for
different field plate.

minimize the mobility of electrons at the AlGaN/GaN surfaces of the uniform while the power collapse can be easily prevented by adopting
device. The scope of the Gate field plate is the electric field plate be­ the Multi-fin Source and Gate field plate technique. To achieve a pre­
tween the gate field plate edge and the drain is more constant for me­ dominant result, based on the literature the combined source and Gate
dium length field plate, which results in increasing VBR for high-k field plate technique leads to improving the VBR and minimizes the gate
passivation layers. Based on the literature, this not only increases the ambipolar current.
breakdown voltage of the device but eventually lessens the field trap­
ping, which leads to an increase in the current-voltage amplitude at high 6. Conclusion
frequencies. The impact on the DC and RF performances is investigated
based on the above-discussed various techniques of the field plate. In In conclusion, this article comprehensively explores the impact of
summary, the drain field plate enhances the performance in power ap­ various field plate designs on the properties and performance of High
plications and a corresponding decrease in the impact ionization rate. Electron Mobility Transistor (HEMT) devices. The main objective of
An airbridge field plate technique can minimize the parasitic effect and employing field plates is to reduce the mobility of electrons at the
the discrete field plate technique can reduce the source-to-gate region AlGaN/GaN surfaces, thereby improving the DC-to-RF dispersion and
without much compromise in the device breakdown voltage. The slant increasing the breakdown voltage (VBR) of the devices. Different field
field plate technique can reduce the gate-drain capacitance and also plates such as Gate Fieldplate, Source Fieldplate, Source and Gate
enhance the small signal performance due to the impact on Cgd and Connected, Drain Fieldplate, Source gate drain Fieldplate, Air-bridge
improves the output resistance. The above-stated fieldplate techniques Recessed Source Field Plate, and Slant Fieldplate, were studied in
tend to impact the RF-based performances of the HEMT device. Based on detail. The self-heating effect, which affects the power characteristics of
the literature the Gate field plate technique is dominant in improving the GaN-based HEMTs is mitigated by implementing field plate designs,
breakdown voltage of the device. Yet, the gate field plate has a which ultimately enhance HEMT power performance and reduce ther­
compromise in field plate construction resulting in a decrease in gate- mal resistance. Gate field plates are particularly effective in raising the
drain capacitance at low voltage and an increase in gate-drain current breakdown voltage and lessening field trapping, leading to increased
depletion at high voltages. This alongside makes the electric field largely current-voltage amplitudes at high frequencies. The drain field plate

8
J.S. Raj Kumar et al. Microelectronics Journal 140 (2023) 105951

Table 2 Table 3
Reported data of HEMT with different FP Techniques. Reported drain current value of HEMT with different FP Technique.
Ref Technique Breakdown Frequency Power Ref Technique Drain current
Voltage (GHz) (W/ (Id)
VBR(V) mm)
fT fmax (Aamir Ahsan et al., 2017) Gate field plate 1020 mA/mm
(Pérez-Tomás &Fontserè, 2011) Gate field plate 1 mA/mm
(Shreepad Gate field 630 36 – 9.2
(Chini et al., 2013) Gate field plate 42 mA/mm
Karmalkar & plate
(Iwamoto et al., 2021) Gate field plate 10 mA/mm
Mishra, 2001)
(Cui et al., 2021) Gate field plate 1.35 A/mm
(Y. F. Wu et al., Gate field 170 45 60 32.2
(Augustine Fletcher et al., 2019) Gate field plate 0.76 A/mm
2004) plate
(Arivazhagan et al., 2019b) Gate field plate 850 mA/mm
(Jeong Sun Moon Gate field 50 156 308 5.5
(Singh et al., 2019) Gate source field plate 380 mA/mm
et al., 2021) plate
(Vipan Kumar et al., 2006b) Gate field plate 1.4 A/mm
(Vipan Kumar Gate field 65 60 100 6.9
(Zou et al., 2021) Gate field plate 0.57 A/mm
et al., 2006a) plate
(Sun & Eastman, 2005) Gate field plate 1.08 A/mm
(Song et al., 2007) Gate field 1900 18.4 65 8.8
(Khachatrian et al., 2019) Gate field plate 850 mA/mm
plate
(Wataru Saito et al., 2007) Gate source field plate 1.2 A
(Campbell et al., Gate field 60 14 35.5 –
(Peng et al., 2011) Source field plate 1.25A/mm
2009a) plate
(Poling, Via, Bole, Johnson, & Source field plate 55 mA/mm
(J.S. Moon et al., Gate field 100 55 – 10
McDermott, 2017)
2008) plate
(Peng et al., 2013) Source field plate 0.075 mA/
(J.S. Moon et al., Gate field 90 95 200 4.5
mm
2018c) plate
(Yao et al., 2019) Source field plate 270 mA/mm
(Fitch et al., 2015) Gate field 50 63 80 12.5
(Cheng & Chou, 2013) Source field plate 416 nA/mm
plate
(Xie, Xu, Zhang, & Ng, 2012) Source and drain field 7.3 A/mm
(Sasikumar et al., Gate field 144 38.5 95 –
plate
2016) plate
(Canato et al., 2020) Multifin 2.8 A/mm
(Iwamoto, Gate field 560 – – –
(W. Saito et al., 2005) Source and drain field 1A/mm
Akiyama, & plate
plate
Horio, 2021)
(Minetto et al., 2021) Source and drain field 100 mA/mm
(Pérez-Tomás Gate field 67–145 – – –
plate
&Fontserè, plate
(Millesimo et al., 2020) Source and gate multifin 1 mA/mm
2011)
field plate
(W.-H. Wu et al., Gate field 1590 400 – 10 W/
(Šodan et al., 2015) Source and gate multifin 500 mA/mm
2017) plate mm2
field plate
(Cui et al., 2021) Gate field 2 kV 70 – 3.8
plate
(Augustine Gate field 330 20 – –
Fletcher, Nirmal, plate Table 4
Ajayan, &
Reported Breakdown voltage, Power and PAE of HEMT with different FP
Arivazhagan,
2019)
Technique.
(Coffie, 2014) Gate field 1000 – 40 Ref Technique Breakdown Power PAE
plate Voltage VBR(V) (W/mm) %
(Zou, Yang, Ma, & Gate field 91 24.1 – –
Hao, 2021) plate (Y. F. Wu et al., 2004) Gate field 170 32.2 54.8
(Khachatrian et al., Gate field 95 150 230 2 Plate
2019) plate (Jeong Sun Moon et al., Gate field 50 5.5 48
(Singh et al., 2019) Gate source 420 – – – 2021) plate
field plate (J. S. Moon et al., 2005) Gate field – 18.8 43
(Wataru Saito Gate source 350 – – – plate
et al., 2007) field plate (Vipan Kumar et al., Gate field 65 6.9 58
(Wespel et al., Gate, source 700 – – 20 m 2006a) plate
2016) and drain (Dora, Chakraborty, Gate field – 9.1 23.7
connected McCarthy et al., plate
field plate 2006)
(Peng, Zheng, Luo, Source field 100 22.7 45.8 14.2 (Hasan, Asano, Tokuda, Gate field – 15 >20
& Liu, 2011) plate &Kuzuhara, 2013a) plate
(Peng, Zheng, Ge, Source field 100 23.2 9.6 – (J.S. Moon et al., Gate field 100 10 55
Wei, & Liu, plate 2018c) plate
2013) (Saito et al., 200) Gate field 90 4.5 >70
(Aamir Ahsan, Air-bridge 144 38.5 95 – plate
Ghosh, recessed (Chiu et al., 2010) Source field 327 – 55
Khandelwal, & source FP plate
Chauhan, 2017) (RSFP) (Saito et al., 2010) Source field 940 122 94.2
(Xie, Xu, Lee et al., Air bridge 375 – – – plate
2012a) Source field (Schmelzer & Long, Source field 100 14.2 48
plate 2010) plate
(Zhen et al., 2021) Dual field 1056 – – – (Peng, M. Z et al., 2013) Source field 100 – 42.34
plate plate
(Wong et al., 2017) Slant field 146 53 100 –
plate
(Suh et al., 2006) Slant field 1400 16 45 40 enhances power performance by reducing the impact ionization rate,
plate while the airbridge and discrete field plate techniques minimize para­
(Chiu et al., 2013) Source field 327 5.5 25 – sitic effects and source-to-gate region size without compromising device
plate
breakdown voltage. The slant field plate technique reduces gate-drain
(Wataru Saito Source field 940 – – 122
et al., 2008) plate capacitance and improves small signal performance. In summary, the
choice of field plate technique depends on specific device requirements,

9
J.S. Raj Kumar et al. Microelectronics Journal 140 (2023) 105951

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