SRM INSTITUTE OF SCIENCE AND TECHNOLOGY

RAMAPURAM

DEPARTMENT OF PHYSICS

PHYSICS: SEMICONDUCTOR PHYSICS (18PYB103J)

CHAPTER - 1

PART - A

1. Which of the following is responsible for electrical conduction in metal?

a) Electrons
b) Protons
c) Neutrons
d) Positrons

2. The electrons in inner shells are called as

a) Valence electrons
b) Core electrons
c) Conductions electrons
d) Free electrons

3. Conduction electrons in metal moves in _______

a) Positive direction
b) Negative direction
c) Random direction
d) Up and down

4. Free electrons move always in

a) Positive direction
b) Negative direction
c) Random direction
d) Up and down

5. The failures of classical theories were overcome by

a) Sommerfeld
b) Drude
c) Widmann
d) Lorentz

6. In Quantum theory electrons possess

a) Particle nature
b) Wave nature
c) Liquid nature
d) Gas nature

7. Free electrons in metals always obey

a) Fermi Dirac statistics
b) Wiedemann Franz law
c) Bose Einstein Statistics
d) Drude Lorentz theory
Page 1 of 5
8. In real crystal at positive ion site, the potential of electrons will become
a) Zero
b) 1
c) 2
d) 3

9. According to Kronig Penney model, the shape of inner potential of crystal is

a) Rectangular
b) Triangular
c) Spherical
d) Sinusoidal

10. At low temperatures, semiconductors will become

a) Conductors
b) Insulators
c) Ferroelectrics
d) Superconductors

11. In semiconductors at low temperatures, the valence band will be

a) Full
b) Empty
c) Partially full
d) Partially empty

12. The conduction electrons always contribute to

a) Electricity
b) Conductivity
c) Thermal effect
d) Magnetic effect

13. The difference between metals, semiconductors and insulators is based on

a) Value of bandgap
b) No of electrons in valence band
c) No of electrons in conduction band
d) Magnitude of electric field applied

14. The free electron theory of metals was initiated by

a) Pauli
b) Sommerfeld
c) Lorentz and Drude
d) Fermi-Dirac

15. At any temperature T and for E=EF in metals, the Fermi-distribution function
becomes
a) 0
b) Infinity
c) 1
d) ½

Page 2 of 5
16. The value of Fermi-distribution function at absolute zero (T = 0 K) is 1, i.e., F(E)=1,
under the condition
a) E > EF
b) E < EF
c) E = EF
d) E >> EF

17. With the increase in temperature, the resistance of a metal

a) Remains constant
b) Increases
c) Decreases
d) Becomes zero

18. A band or range of energy levels that an electron in a crystal is allowed to occupy is
known as
a) Allowed energy bands
b) Energy bands
c) Forbidden energy bands
d) Energy Band-gap

19. A band or range of energy levels that an electron in a crystal is not allowed to
occupy is known as
a) Allowed energy bands
b) Energy bands
c) Forbidden energy bands
d) Energy Band-gap

20. The principle stating that no two electrons can occupy the same quantum state is
known as
a) Heisenberg Uncertainty principle
b) Pauli Exclusion principle
c) De Broglie principle
d) Quantum mechanical principle

21. The complex physical quantity which describes about the particle wave and helps
deriving the probability density function is called as
a) Wave equation
b) Wave function
c) Schroedinger equation
d) Probability density function

22. The first Brillouin zone is defined between the region

a) k = 0 to π/a
b) k = - 2 π /a to π/a
c) k = - π/a to 2π/a
d) k = - π/a to π/a

23. The indirect bandgap semiconductors require a change in energy along with
change in
a) Momentum
b) Velocity
Page 3 of 5
 c) Mass
d) Potential

24. The direct bandgap semiconductors have the requirement of

a) Change in energy & change in momentum
b) No change in energy & change in momentum
c) No change in energy & no change in momentum
d) Change in energy & No change in momentum

25. The position of fermi level EF in an intrinsic semiconductor is given by

a) EF = E C – EV
b) EF = E V – EC
c) EF = (EV – EC) / 2
d) EF = (EC + EV) / 2

26. The donor atoms in extrinsic n-type semiconductors contribute

a) Electrons to conduction band
b) Electrons to valence band
c) Holes to conduction band
d) Holes to valence band

27. The acceptor atoms in extrinsic p-type semiconductor contribute

a) Holes to conduction band
b) Holes to valence band
c) Electrons to conduction band
d) Electrons to valence band

28. The carrier generation is the process by which

a) Electrons are created
b) Holes are created
c) Electrons and holes are created
d) Electrons and holes are annihilated

29. The carrier regeneration is the process by which

a) Electrons and holes are created
b) Electrons and holes are annihilated
c) Electrons are created
d) Holes are created

30. In thermal equilibrium, the concentrations of electrons and holes are

a) Dependent on time
b) Independent of time
c) Dependent on time and energy
d) Independent of time and energy
Page 4 of 5
31. The quantum of energy in elastic wave is known as
a) Photon
b) Phonon
c) Electron
d) Magnon

32. The Phonons are particles that obey

a) Fermi Dirac statistics
b) Wiedemann Franz law
c) Bose Einstein Statistics
d) Drude Lorentz theory
PART – B
1. What are the merits and demerits of Classical free electron theory?
2. What are the merits and demerits of Quantum free electron theory?
3. Write short notes on direct bandgap semiconductors.
4. Write short notes on indirect bandgap semiconductors.
5. Define intrinsic semiconductors using bandgap in energy levels.
6. Explain the concept of phonons
7. Describe in brief about the First Brillouin zone.
8. How does the band theory differentiate the semiconductors and insulators?
9. What is the influence of dopant on n-type semiconductors?
10. What is the influence of dopant on p-type semiconductors?
11. Define Fermi level. Describe the Fermi Distribution function.
12. How does the E-k diagram explain the existence of bandgap in materials?
13. Write note on Effective mass.
14. Describe the concept of periodic potential in crystals.
15. Give the band structure diagram of GaAs and Si crystals.
16. Write down the Fermi distribution function. How does the function vary with
temperature?
17. Differentiate between semiconductors and insulators based on band theory.

PART – C

1. Describe free electron theory using classical concepts. Also mention its merits and
demerits.
2. Describe free electron theory using quantum concepts. Also mention its merits and
demerits.
3. Derive the density of states equation for the concentration of charge carriers.
4. Derive the equation for the band structure of energy in solids using the assumptions
of Kronig-Penney model.

Page 5 of 5
c18PYB103J-Semiconductor Physics UNIT I

Question Bank

Multiple Choice Questions

1. What does conductivity of metals depend upon?

a) The nature of the material
b) Number of free electrons
c) Resistance of the metal
d) Number of electrons

2. What happens to the free electrons when electric field is applied?

a) They move randomly and collide with each other
b) They move in the direction of the field
c) They remain stable
d) They move in the direction opposite to that of the field

3. Outer most shell of atom with highest energy level is known as

a) 1st shell
b) 2nd shell
c) Valence shell
d) hole shell

4. Which of the following theories cannot be explained by classical theory?

a) Electron theory
b) Lorentz theory
c) Photo-electric effect
d) Classical free electron theory

5. Which of the following theories can be adopted to rectify the drawbacks of

classical theory?
a) Compton theory
b) Quantum theory
c) Band theory
d) Electron theory
6. How does a semiconductor behave at absolute zero?
a) Conductor
b) Insulator
c) Semiconductor
d) Protection device

7. What are the charge carriers in semiconductors?

a) Electrons and holes
b) Electrons
c) Holes
d) Charges

8. How is charge carriers produced in intrinsic semiconductors?

a) By pure atoms
b) By electrons
c) By impure atoms
d) By holes

9. What type of material is obtained when intrinsic semiconductor is doped with

pentavalent impurity?
a) N-type semiconductor
b) Extrinsic semiconductor
c) P-type semiconductor
d) Insulator

10. What type of material is obtained when an intrinsic semiconductor is doped with
trivalent impurity?
a) Extrinsic semiconductor
b) Insulator
c) N-type semiconductor
d) P-type semiconductor

11. The motion of electron in periodic potential is explained by

a) Drude Model
b) Lorentz Model
c) Drude – Lorentz Model
 d) Kronig Penny Model
12. According band theory of solids, the splitting up of energy levels start from
a) Outermost shell
b) First Shell
c) Second shell
d) Any Shell
13. According band theory of solids, the splitting up of energy levels will be maximum
at
a) First Shell
b) Second shell
c) Any Shell
d) Outermost Shell
14. According to classical free electron theory,
1. there is no interaction between conduction electrons
2. the interaction of free electrons with ion cores is negligible
3. the free electrons find uniform electric field of positive ions and that of
electrons in metal
4. all
15. Most commonly used semiconductor material is
a. Silicon
b. Germanium
c. Mixture of silicon and germanium
d. Arsenic.
16. Energy band gap size for insulators is in the range ________ eV.
a)1-2
b) 2-3
c) 3-4
d) > 4
17. Fermi energy level for intrinsic semiconductors lies
a) At middle of the band gap
b) Close to conduction band
c) Close to valence band
d) None
18. . In intrinsic semiconductors, number of electrons __________ number of holes.
a) Equal
b) Greater than
 c) Less than
d) Cannot define
19. Energy band gap size for insulators is in the range ________ eV.
a)1-2
b) 2-3
c) 3-4
d) > 4
20. A hole in the semiconductors treated as __________
a) A free electron
b) A incomplete part of electron pair bond
c) A free proton
d) A free neutron
21. The probability that an electron in a metal occupies the Fermi-level, at any
temperature (>0 K) is
a) 0
b) 1
c) 0.5
d) 100
22. Consider the following statements: pure germanium and pure silicon are
examples of:
1. Direct band-gap semiconductors
2. Indirect band-gap semiconductors
3. Degenerate semiconductors
Of these statements:
a) 1 alone is correct
b) 2 alone is correct
c) 3 alone is correct
d) All are correct

23. What is a Brillouin zone?

a) A region of energy---space that encompasses all of the unique values of
energy
b) A region of position---space that the electron is allowed to reside within
c) Another name for the unit cell of the crystal
d) A region of k-space that contains all of the unique solutions of the wave
equation
e) A region of k-space where the group velocity is positive
 24. When temperature increases, intrinsic concentration increases which results in
increase of

a) resistivity
b) conductivity
c) capacitivity
d) all of the above

25. Energy gap is overlapped between Valence band and conduction band in

a) insulators
b) conductors
c) semiconductors
d) super semiconductors

Short Answer Type Questions

1. Write any two success and failures of classical free electron theory
2. Write any two success and failures of quantum free electron theory
3. Write a short note on Band theory of solids.
4. Explain E-K diagram with the help of Kronig-Penney Model (solution only)
5. Discuss Brillouin Zone for 1-D crystal lattice
6. Explain the concept of phonons in the indirect band gap materials using E-K diagram
7. Explain probability of occupation in a given energy level using Fermi-Dirac distribution
8. Write any two differences between n-type and p-type semiconductors
9. Explain direct band gap and indirect band gap in materials with the help of E-K diagram.
10. Write the classification of electronic materials on the basis of band theory
Descriptive Type Questions
1. (a) Explain classical free electron theory with success and failures
(b) Explain quantum free electron theory with success and failures
2. (a) Derive the expression for effective mass of an electron
(b) Write short notes non-equilibrium properties of carrier.
3. (a) Explain intrinsic semiconductor on the basis of energy levels.
(b) Explain the influence of acceptors and donors in semiconductors with energy level
diagrams
4. Define and derive the expression for density of states
5. Explain the motion of electron in periodic potential using Kronig-Penney Model

MCQ Questions:

1. Classical free electron theory proposed in……….

a. 1928
b. 1926
c. 1900
d. 1896
2. Quantum free electron theory proposed in…………..
a. 1900
b. 1905
c. 1928
d. 1926
3. ………….is defined as time taken by the electron to move from disturbed position to rest
position when electric field is switched off.
a. Critical time
b. Relaxation time
c. Mean free time
d. Average time
4. According to quantum free electron theory, …………are having wave motion
a. Electrons
b. Protons
c. Neutrons
d. Photons
5. When two identical atoms are brought closer, the………..of atom overlap and interact.
a. Inner orbit
b. Outermost orbit
c. Nucleus
d. Neutrons
6. For conductors, the energy gap between valance band and conduction band is………….
a. 1 eV
b. 100 eV
c. 10 eV
d. Zero
7. In Kronig-Penney model, the electrons moving in………..potential
a. Constant
b. Zero
c. Periodic
d. Negative
8. ………….introduced zone theory
a. Newton
b. Drude
c. Bloch
d. Sommerfield
9. The region between +π/a and –π/a is called…………..
a. Forbidden gap
b. First Brillouin zone
c. Second Brillouin zone
d. Third Brillouin zone
10. …………… shows characteristics of particular semiconductor material
a. E-K diagram
b. Conventional band diagram
c. Circuit diagram
 d. Zone diagram
11. The E-K diagram demonstrate…………..
a. Resistivity
b. Conductivity
c. Electron (or) Hole mobility
d. Thermal conductivity
12. …………..is the example of direct band gap semiconductor
a. GaAS
b. Silicon
c. Germanium
d. Aluminum
13. The probability of a radiative recombination is……….for Indirect band gap semiconductor
a. High
b. Low
c. Zero
d. Infinity
14. A packet of waves can travel throughout the crystal with a definite energy and momentum is
called……………..
a. Photons
b. Phonons
c. Mesons
d. Bosons
15. The wave length of phonons is the order of…………………
a. 1 Å
b. 1mm
c. 1 m
d. 1 km
16. The…………….mass takes into account the particle mass and also takes into account the effect of the
internal forces.
a. Internal
b. External
c. Effective
d. Critical mass
17. Fermi Energy is the energy of the state at which the probability of electron occupation is…………at
any temperature above 0 K.
a. 1
b. 0
c. ½
d. -1
18. The electrical resistivity of copper at 27⁰ C is 1.72 x 10-8 Ohm m. and the Lorentz number is 2. 26 x 10-8
W Ohm K-2 then its thermal conductivity is…………………
a. 394.18 w/m
b. 394.18 w m/m/k
c. 3.9418 w/m/k
d. 3.9418 w/m
19. What is the drift velocity of electron if the current density is 4.976 x 10 power 6 A/m2 and carrier
density is 8.46 x 10 power 28 /cubic meter?
 a. 367 m/s
b. 0.367 m/s
c. 0.000367 m/s
d. 0.0367 m/s
20. The drift velocity of electron is 0.000367 m/s and carrier density is 8.46 x 10 power 28 /cubic meter
then the current density is………………a/m2
a. 4.976 x 10 power 6
b. 4.976 x 10 power -6
c. 4.976 x 10 power -3
d. 4.976 x 10 power 3
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 SRM INSTITUTE OF SCIENCE AND TECHNOLOGY
RAMAPURAM

DEPARTMENT OF PHYSICS

PHYSICS: SEMICONDUCTOR PHYSICS (18PYB103J)

CHAPTER - 1

PART - A

1. Which of the following is responsible for electrical conduction in metal?

a) Electrons
b) Protons
c) Neutrons
d) Positrons

2. The electrons in inner shells are called as

a) Valence electrons
b) Core electrons
c) Conductions electrons
d) Free electrons

3. Conduction electrons in metal moves in _______

a) Positive direction
b) Negative direction
c) Random direction
d) Up and down

4. Free electrons move always in

a) Positive direction
b) Negative direction
c) Random direction
d) Up and down

5. The failures of classical theories were overcome by

a) Sommerfeld
b) Drude
c) Widmann
d) Lorentz

6. In Quantum theory electrons possess

a) Particle nature
b) Wave nature
c) Liquid nature
d) Gas nature

7. Free electrons in metals always obey

a) Fermi Dirac statistics
b) Wiedemann Franz law
c) Bose Einstein Statistics
d) Drude Lorentz theory
Page 1 of 5
8. In real crystal at positive ion site, the potential of electrons will become
a) Zero
b) 1
c) 2
d) 3

9. According to Kronig Penney model, the shape of inner potential of crystal is

a) Rectangular
b) Triangular
c) Spherical
d) Sinusoidal

10. At low temperatures, semiconductors will become

a) Conductors
b) Insulators
c) Ferroelectrics
d) Superconductors

11. In semiconductors at low temperatures, the valence band will be

a) Full
b) Empty
c) Partially full
d) Partially empty

12. The conduction electrons always contribute to

a) Electricity
b) Conductivity
c) Thermal effect
d) Magnetic effect

13. The difference between metals, semiconductors and insulators is based on

a) Value of bandgap
b) No of electrons in valence band
c) No of electrons in conduction band
d) Magnitude of electric field applied

14. The free electron theory of metals was initiated by

a) Pauli
b) Sommerfeld
c) Lorentz and Drude
d) Fermi-Dirac

15. At any temperature T and for E=EF in metals, the Fermi-distribution function
becomes
a) 0
b) Infinity
c) 1
d) ½

Page 2 of 5
16. The value of Fermi-distribution function at absolute zero (T = 0 K) is 1, i.e., F(E)=1,
under the condition
a) E > EF
b) E < EF
c) E = EF
d) E >> EF

17. With the increase in temperature, the resistance of a metal

a) Remains constant
b) Increases
c) Decreases
d) Becomes zero

18. A band or range of energy levels that an electron in a crystal is allowed to occupy is
known as
a) Allowed energy bands
b) Energy bands
c) Forbidden energy bands
d) Energy Band-gap

19. A band or range of energy levels that an electron in a crystal is not allowed to
occupy is known as
a) Allowed energy bands
b) Energy bands
c) Forbidden energy bands
d) Energy Band-gap

20. The principle stating that no two electrons can occupy the same quantum state is
known as
a) Heisenberg Uncertainty principle
b) Pauli Exclusion principle
c) De Broglie principle
d) Quantum mechanical principle

21. The complex physical quantity which describes about the particle wave and helps
deriving the probability density function is called as
a) Wave equation
b) Wave function
c) Schroedinger equation
d) Probability density function

22. The first Brillouin zone is defined between the region

a) k = 0 to π/a
b) k = - 2 π /a to π/a
c) k = - π/a to 2π/a
d) k = - π/a to π/a

23. The indirect bandgap semiconductors require a change in energy along with
change in
a) Momentum
b) Velocity
Page 3 of 5
 c) Mass
d) Potential

24. The direct bandgap semiconductors have the requirement of

a) Change in energy & change in momentum
b) No change in energy & change in momentum
c) No change in energy & no change in momentum
d) Change in energy & No change in momentum

25. The position of fermi level EF in an intrinsic semiconductor is given by

a) EF = E C – EV
b) EF = E V – EC
c) EF = (EV – EC) / 2
d) EF = (EC + EV) / 2

26. The donor atoms in extrinsic n-type semiconductors contribute

a) Electrons to conduction band
b) Electrons to valence band
c) Holes to conduction band
d) Holes to valence band

27. The acceptor atoms in extrinsic p-type semiconductor contribute

a) Holes to conduction band
b) Holes to valence band
c) Electrons to conduction band
d) Electrons to valence band

28. The carrier generation is the process by which

a) Electrons are created
b) Holes are created
c) Electrons and holes are created
d) Electrons and holes are annihilated

29. The carrier regeneration is the process by which

a) Electrons and holes are created
b) Electrons and holes are annihilated
c) Electrons are created
d) Holes are created

30. In thermal equilibrium, the concentrations of electrons and holes are

a) Dependent on time
b) Independent of time
c) Dependent on time and energy
d) Independent of time and energy
Page 4 of 5
31. The quantum of energy in elastic wave is known as
a) Photon
b) Phonon
c) Electron
d) Magnon

32. The Phonons are particles that obey

a) Fermi Dirac statistics
b) Wiedemann Franz law
c) Bose Einstein Statistics
d) Drude Lorentz theory
PART – B
1. What are the merits and demerits of Classical free electron theory?
2. What are the merits and demerits of Quantum free electron theory?
3. Write short notes on direct bandgap semiconductors.
4. Write short notes on indirect bandgap semiconductors.
5. Define intrinsic semiconductors using bandgap in energy levels.
6. Explain the concept of phonons
7. Describe in brief about the First Brillouin zone.
8. How does the band theory differentiate the semiconductors and insulators?
9. What is the influence of dopant on n-type semiconductors?
10. What is the influence of dopant on p-type semiconductors?
11. Define Fermi level. Describe the Fermi Distribution function.
12. How does the E-k diagram explain the existence of bandgap in materials?
13. Write note on Effective mass.
14. Describe the concept of periodic potential in crystals.
15. Give the band structure diagram of GaAs and Si crystals.
16. Write down the Fermi distribution function. How does the function vary with
temperature?
17. Differentiate between semiconductors and insulators based on band theory.

PART – C

1. Describe free electron theory using classical concepts. Also mention its merits and
demerits.
2. Describe free electron theory using quantum concepts. Also mention its merits and
demerits.
3. Derive the density of states equation for the concentration of charge carriers.
4. Derive the equation for the band structure of energy in solids using the assumptions
of Kronig-Penney model.

Page 5 of 5
DEPARTMENT OF PHYSICS AND NANOTECHNOLOGY
SRM INSTITUTE OF SCIENCE AND TECHNOLOGY
18PYB103J –Semiconductor Physics

Module 2 Lecture 16

Solving Problems

1
18PYB103J Module 2 Lecture 16
1. Determine the wavelength of radiation given out by an LED
with an energy of 3 eV, given that h = 6.626 × 10-34 m2 kg / s
and C= 3 × 108 m/s
We know that

= 414 x 10-9 m or 414 nm

2
18PYB103J Module 2 Lecture 16
2. Calculate the wavelength of light emission from GaAs whose
band gap is 1.44 eV.
We know that

= 8628 x 10-10 m or 8628 Å

3
18PYB103J Module 2 Lecture 16
3. Calculate the long wavelength limit of an extrinsic
semiconductor if the ionization energy is 0.02 eV.
We know that

= 6.2119 x 10-5 m

4
18PYB103J Module 2 Lecture 16
4. An LED has a peak emission wavelength of 1.55 x 10-6 m.
Find its band gap in eV.
We know that

5
18PYB103J Module 2 Lecture 16
5. A cadmium Sulphide (Eg=2.4 eV) photo detector is
illuminated with light of wavelength 3000 Å. Find the total
energy falling on it and comment whether electron-hole pairs
are generated or not?
We know that, total energy falling on it

6
18PYB103J Module 2 Lecture 16
 SRM INSTITUTE OF SCIENCE AND TECHNOLOGY
DEPARTMENT OF PHYSICS
PHYSICS: SEMICONDUCTOR PHYSICS (18PYB103J)
CHAPTER - 2

PART – A
1. A semiconductor is formed by ____ bonds.
(A) Covalent
(B) Electrovalent
(C) Co-ordinate
(D) Oxidation

2. A semiconductor has _____ temperature coefficient of resistance.

(A) Positive
(B) Zero
(C) Negative
(D) Large

3. When a pure semiconductor is heated, its resistance _____.

(A) Increases
(B) Decreases
(C) Remains the same
(D) Increases then it decreases

4. An n-type semiconductor have ______.

(A) Holes as majority charge carriers
(B) Electrons as majority charge carriers
(C) Equal number of holes and electrons as charge carriers
(D) None of the above

5. A hole in a semiconductor is defined as _____.

(A) A free electron
(B) The incomplete part of an electron pair bond
(C) A free proton
(D) A free neutron

6. The random motion of holes and free electrons due to thermal agitation is called_____.
(A) Diffusion
(B) Pressure
(C) Ionization
(D) Drift

7. As the doping to a pure semiconductor increases, the bulk resistance of the semiconductor ______.
(A) Remains the same
(B) Increases
(C) Decreases
(D) Decreases then increases
Page 1 of 5
8. Current flow in a semiconductor depends on the phenomenon of
(A) Drift
(B) Diffusion
(C) Recombination
(D) All of the above

9. The Fermi level in a p-semiconductor lies close to

(A) The top of the valence band
(B) The top of the conduction band
(C) The bottom of the valence band
(D) The bottom of the conduction band

10. Electron-hole pairs are produced due to _____.

(A) Recombination
(B) Thermal energy
(C) Ionization
(D) Doping

11.The p-region has a greater concentration of ______ as compared to the n-region in a P-N junction.
(A) Holes
(B) Electrons
(C) Both holes & electrons
(D) Phonons

12. A p-type semiconductor material is doped with ____ impurities whereas a n-type semiconductor material
is doped with ______ impurities.
(A) Acceptor, donor
(B) Acceptor, acceptor
(C) Donor, donor
(D) Donor, acceptor

13. The n-region has a greater concentration of _____ as compared to the p-region in a P-N junction diode.
(A) Holes
(B) Electrons
(C) Both holes & electrons
(D) Phonons

14. Which of the below mentioned statements is false regarding a p-n junction diode?
(A) Diode are current control devices
(B) Diodes are rectifying devices
(C) Diodes are unidirectional devices
(D) Diodes have three terminals

15. In the p & n regions of the p-n junction the ____ & the ___ are the minority charge carriers respectively.
(A) holes, holes
(B) electrons, electrons
(C) holes, electrons
(D) Electrons, Holes
Page 2 of 5
16. Let us assume that the doping density in the p-region is 10-9 cm-3 & in the n-region is 10-17cm-3 as such
the p-n junction so formed would be termed as a
(A) p– n–
(B) p+ n–
(C) p– n+
(D) p+ n+

17. When a physical contact between a p-region & n-region is established which of the following is most
likely to take place?
(A) Electrons from N-region diffuse to P-region
(B) Holes from P-region diffuse to N-region
(C) Both of (A) & (B) statements are True
(D) Both of (A) & (B) statements are False

18.Which of the following is true in case of an unbiased p-n junction diode?

(A) Diffusion does not take place
(B) Diffusion of electrons & holes goes on infinitely
(C) There is zero electrical potential across the junctions
(D) Charges establish an electric field across the junction

19. Which of the following is true in case of a forward biased p-n junction diode?
(A) The positive terminal of the battery attract electrons from the p-region
(B) The positive terminal of the battery injects electrons into the p-region
(C) The negative terminal of the battery attract electrons from the p-region
(D) The negative terminal of the battery injects electrons into the p-region

20. What is the forward bias ideality factor of a Schottky barrier diode?
(A) n = 1
(B) n = 2
(C) 1< n < 2
(D) n > 2

21. The amount of radiance in planar type of LED structures is

(A) Low
(B) High
(C) Zero
(D) Negligible

22.In a basic OLED structure, the diamine layer is used as a ______.

(A) HTL
(B) ETL
(C) ITL
(D) CCL

23. In a basic OLED structure, the ALQ3 layer acts as a _____.

(A) HTL
(B) ETL
(C) ITL
Page 3 of 5
 (D) CCL

24. _______ is the condition for transport of charge carriers in Schottky barrier diode.
(A) ϕm = ϕs
(B) ϕm > ϕs
(C) ϕm < ϕs
(D) ϕm = 0

25. __________ is the condition for transport of charge carriers in Ohmic contact.
(A) ϕm = ϕs
(B) ϕm > ϕs
(C) ϕm < ϕs
(D) ϕm = 0

26. An Ohmic contact is a _____ providing current conduction in both directions.

(A) Low - resistance junction
(B) High - resistance junction
(C) Infinite – resistance junction
(D) Zero - resistance junction

27. In tunneling barrier, the space – charge width is a rectifying metal-semiconductor contact is inversely
proportional to square root of ______.
(A) Semiconductor doping
(B) Metal doping
(C) Carrier injection
(D) recombination.

28. LED is a semiconductor p-n junction diode which convert _______ under forward bias.
(A) Light energy into Electrical energy
(B) Electrical energy into Light energy
(C) Thermal energy into electrical energy
(D) Electrical energy into thermal energy

PART –B
1. Write note on intrinsic semiconductor.
2. What is meant by Fermi level in semiconductor? Where does the Fermi level lie in an intrinsic
semiconductor?
3. Describe the difference between P-type and N-type semiconductor materials.
4. Explain about carrier generation and recombination.
5. Explain the concept of drift current.
6. Explain the concept of diffusion current.
7. Discuss in detail about the of p-n junction.
8. Write notes on the forward and reverse bias p-n junction.
9. What happens to the bands when a junction is formed between metals and semiconductors?
10. What is a rectifying contact? Explain with diagram.
11. Explain the working concept of Ohmic contact.
12. Write notes on photocurrent in p-n junction.
13. Write a short note on Organic LED.
Page 4 of 5
14. Write a short note on optoelectronic materials and its applications.

PART - C
1. What is intrinsic semiconductor? Explain atomic structure and energy level diagram of intrinsic
semiconductor? Where does the Fermi level lie in an intrinsic semiconductor?
2. What is Extrinsic semiconductor? Explain N-type semiconductor and the variation of Fermi level with
temperature with the diagram.
3. What is Extrinsic semiconductor? Explain P-type semiconductor and the variation of Fermi level with
temperature with the diagram.
4. Explain in detail about the rectifying and non-rectifying contacts using band diagram.
5. Explain in detail (i) Ohmic contacts, and (ii) Schottky contacts.
6. Explain principle, construction, working of LED? Mention its merits, demerits and applications.
7. Explain principle, construction, working of OLED? Mention merits, demerits and applications.
8. Using the concept of carrier drift and diffusion current, derive and explain the concept of continuity
equation.

Page 5 of 5
 18PYB103J-Semiconductor Physics
Question Bank –Unit II

Multiple Choice Questions.

1. A semiconductor is formed by ……… bonds.

a. Covalent
b. Electrovalent
c. Co-ordinate
d. None of the above

2. A semiconductor has ………… temperature coefficient of resistance.

a. Positive
b. Zero
c. Negative
d. None of the above

3. When a pure semiconductor is heated, its resistance …………..

a. Goes up
b. Goes down
c. Remains the same
d. Can’t say

4. An n-type semiconductor is ………

a. Positively charged
b. Negatively charged
c. Electrically neutral
d. None of the above

5. A hole in a semiconductor is defined as …………….

a. A free electron
b. The incomplete part of an electron pair bond
c. A free proton
d. A free neutron

6. The random motion of holes and free electrons due to thermal agitation is called ……….
a. Diffusion
b. Pressure
c. Ionisation
d. None of the above

7. As the doping to a pure semiconductor increases, the bulk resistance of the

semiconductor ………..
a. Remains the same
 b. Increases
c. Decreases
d. None of the above

8. Current flow in a semiconductor depends on the phenomenon of

a. Drift
b. Diffusion
c. Recombination
d. All of the above

9. The Fermi level in a p-semiconductor lies close to

a. The top of the valence band
b. The top of the conduction band
c. The bottom of the valence band
d. The bottom of the conduction band.

10. Electron-hole pairs are produced by

a. Recombination
b. Tthermal energy
c. Ionization
d. Doping

11.The p-region has a greater concentration of __________ as compared to the n-region in a P-N
junction.
a. holes
b. electrons
c. both holes & electrons
d. phonons
12. A p-type semiconductor material is doped with ____________ impurities whereas a n-type
semiconductor material is doped with __________ impurities
a. acceptor, donor
b. acceptor, acceptor
c. donor, donor
d. donor, acceptor
13. The n-region has a greater concentration of _________ as compared to the p-region in a P-N
junction diode.
a. holes
b. electrons
c. both holes & electrons
d. phonons

14. Which of the below mentioned statements is false regarding a p-n junction diode?
a. Diode are uncontrolled devices
b. Diodes are rectifying devices
 c. Diodes are unidirectional devices
d. Diodes have three terminals

15. In the p & n regions of the p-n junction the _________ & the ___________ are the minority
charge carriers respectively.
a. holes, holes
b. electrons, electrons
c. holes, electrons
d. electrons, holes

16. Lets assume that the doping density in the p-region is 10-9 cm-3 & in the n-region is 10-17cm-3
as such the p-n junction so formed would be termed as a
a. p– n–
b. p+ n–
c. p– n+
d. p+ n+

17. When a physical contact between a p-region & n-region is established which of the following
is most likely to take place?
a. Electrons from N-region diffuse to P-region
b. Holes from P-region diffuse to N-region
c. Both of the above mentioned statements are true
d. Nothing will happen

18.Which of the following is true in case of an unbiased p-n junction diode?

a. Diffusion does not take place
b. Diffusion of electrons & holes goes on infinitely
c. There is zero electrical potential across the junctions
d. Charges establish an electric field across the junction

19. Which of the following is true in case of a forward biased p-n junction diode?
a. The positive terminal of the battery sucks electrons from the p-region
b. The positive terminal of the battery injects electrons into the p-region
c. The negative terminal of the battery sucks electrons from the p-region
d. None of the above mentioned statements are true
20. What is the continuity equation in words?
a. Rate of increase = (inflow – outflow) + drift – diffusion
b. Rate of increase = (inflow – outflow) + generation - recombination
c. Rate of increase = (inflow - outflow)
d. Rate of increase = (inflow + outflow)
21. The forward bias current in a typical Schottky barrier is due to what physical mechanism?
a) Drift
 b) Diffusion
c) Recombination
d) Thermionic emission
22. What is the forward bias ideality factor of a Schottky barrier diode?
a) n = 1
b) n = 2
c) 1< n < 2
d) n > 2
23. The amount of radiance in planer type of LED structures is
a) Low
b) High
c) Zero
d) Negligible
24. The overall power conversion efficiency of electrical lens coupled LED is 0.8% and power
applied 0.0375 V. Determine optical power launched into fiber
a) 0.03
b) 0.05
c) 0.3
d) 0.01
25. The InGaAsP is emitting LEDs are realized in terms of restricted
a) Length strip geometry
b) Radiance
c) Current spreading
d) Coupled optical power

Short Answer Type Questions

26. Write note on intrinsic semiconductor?

27. What is meant by Fermi level in semiconductor? Where does the Fermi level lie in an
intrinsic semiconductor?

28. Describe the difference between P-type and N-type semiconductor materials?

29. Explain about carrier generation and recombination?

30. Discuss about drift current.

31. Discuss about diffusion current.

32. Explain concepts of p-n junction.

33. Write note on forward and reverse bias p-n junction.

34. What happens to the bands when we make contact between metals and
semiconductors?

35. What is a rectifying contact? explain with diagram.

36. Write note on photocurrent in p-n junction?

37. Explain Organic LED?

Descriptive Type Questions

38. What is intrinsic semiconductor? Explain atomic structure and energy level diagram of
intrinsic semiconductor? Where does the Fermi level lie in an intrinsic semiconductor?

39. What is Extrinsic semiconductor? Explain N - type semiconductor with diagram and
variation of Fermi level with temperature?

40. What is Extrinsic semiconductor? Explain P - type semiconductor with diagram and
variation of Fermi level with temperature?

41. Explain principle, construction, working of LED? Mention merits, demerits,

applications?

42. Explain principle, construction, working of OLED? Mention merits, demerits,

applications?
 SRM INSTITUTE OF SCIENCE AND TECHNOLOGY
DEPARTMENT OF PHYSICS
PHYSICS: SEMICONDUCTOR PHYSICS (18PYB103J)
CHAPTER - 3

PART – A

1. An absorbed photon can result in transition between a donor (or acceptor) level and a band in a doped
semiconductor called ____.
(A) Band to band transition
(B) Impurity to band transition
(C) Free carrier Transition
(D) Photonic transition

2. The direct band to band absorption and emission can take place only at frequencies for which photon
energy ______.
(A) hγ > Eg
(B) hγ < Eg
(C) hγ = Eg
(D) hγ = 0

3. ________ is the process where the energy due to recombination is dissipated as photons.
(A) Radiative transition
(B) Non-radiative transition
(C) Absorption
(D) Radiation

4. The _______ process is in which the electron-hole pairs are created and recombined radiatively.
(A) Luminescence
(B) Photon emission
(C) Phonon emission
(D) Radiation.

5. The average velocity acquired by the electrons in a particular direction during the presence of electric
field is called _______.
(A) Relaxation time
(B) Drift velocity
(C) Collision time
(D) Diffusion current

6. The maximum voltage generated across the terminals of solar cell when they are kept open is called
_______.
(A) Short circuit voltage
(B) Open circuit voltage
(C) Fill factor
(D) Drift Voltage.
Page 1 of 4
 7. The photons of energy value ____ that of the band gap values do not get absorbed in photovoltaic cell.
(A) Greater than
(B) Less than
(C) Nearly equal than
(D) Zero

8. An absorbed photon can result in upward transition of electron from valence band to conduction band is
called _______.
(A) Band to band transition
(B) Impurity to band transition
(C) Free carrier Transition
(D) Photonic transition

9. The direct band to band absorption and emission can take place only at wave length for which photon
energy ________.
(A) λg = λ
(B) λg < λ
(C) λg > λ
(D) λg = 0

10. _____ is the process where the excess energy due to recombination is usually imported to phonons and
dissipated as heat.
(A) Radiative transition
(B) Non-radiative transition
(C) absorption
(D) Radiation.

11. The radiative recombination of electron-hole pair created by injection of photons is called ________.
(A) Photoluminescence
(B) Photon emission
(C) Phonon emission
(D) Radiation

12. The maximum current flows in solar cell when its P-side & N-side terminal are shorted, such a current
is called _____.
(A) Drift current
(B) Diffuse current
(C) Short-circuit current
(D) Alternative current

13. The ratio between Eg and charge of electron in photovoltaic cell is called _____.
(A) Current loss
(B) Voltage loss
(C) loss due to metal
(D) Optical loss.

14. _____ is the process of radiative recombination of electron–hole pairs created by electron bombardment.
(A) Photoluminescence
Page 2 of 4
 (B) photon emission
(C) Phonon emission
(D) Cathodoluminescence

15. The band to band transition (inter-band transition) occurs in ________.

(A) Direct band gap semiconductors
(B) Indirect band gap semiconductors
(C) Metal – semiconductors
(D) Superconductors

16. The impurity to band transition occurs in --------.

(A) Direct band gap semiconductors
(B) Indirect band gap semiconductors
(C) Metal - semiconductors
(D) Superconductors

17. The ______ does not require any external energy for process to take place.
(A) Stimulated emission
(B) Spontaneous emission
(C) Stimulated absorption
(D) Stimulated radiation.

18. The process where upper energy level is more populated than lower energy level is called ________.
(A) Stimulated emission
(B) Spontaneous emission
(C) Population inversion
(D) Temperature inversion.

19. The light amplification is achieved by _____ from an atomic or molecular system.
(A) Spontaneous emission
(B) Stimulated emission
(C) Time inversion
(D) Temperature inversion

20. The sun light can be converted to electricity due to the _________.
(A) Photovoltaic effect
(B) Compton effect
(C) Raman effect
(D) Zeeman Effect.

21. The ratio of the maximum power that can be extracted from a solar cell to the ideal power is called ___.
(A) Short circuit voltage
(B) Open circuit voltage
(C) Fill factor
(D) Drift Voltage.

22. The open circuit voltage of a solar cell increases with _______.
(A) Increase in bandgap
(B) Decrease in band gap
Page 3 of 4
 (C) Increase of in holes
(D) Decrease in holes

23. The current density is directly proportional to the _________.

(A) Rest mass of electron
(B) Applied electric field
(C) density of core electron
(D) Collision time.

24. The ratio between spontaneous and stimulated emission coefficients is called ________.
(A) Lorenz number
(B) Lorentz coefficient
(C) Absorption coefficient
(D) Einstein’s coefficient

PART –B
1. Discuss how does photon interactions affect the bulk semiconductors.
2. Describe about the optical recombination process.
3. Explain the optical absorption and emission process in semiconductors using band diagram.
4. Distinguish between spontaneous emission and stimulated emission.
5. Write notes on optical loss.
6. Write notes on optical gain.
7. What happens to the bands when we illuminate a light on PN junction diode under forward bias?
8. Write notes on losses occurring in a Photovoltaic cell.
9. Discuss about the parameters affecting efficiency of a Photovoltaic cell.
10. Derive the expression for electrical conductivity of metals based on Drude-Lorentz model.
11. Write about the basic assumptions of Drude and Lorentz model.

PART – C
1. Derive an expression for the Einstein’s coefficient for absorption and emission of radiation.
2. Explain about the Fermi’s Golden rule for the transition rates in optical process.
3. Explain about the joint density of states in a optical materials. Also discuss about the density of states of
photons.
4. Define Photovoltaic effect. Discuss about the application of photovoltaic effect. Write notes on the
efficiency of Photovoltaic cell.
5. Explain Drude-Lorentz model of free electrons and its application to the conductivity.
6. Explain the basic principle of Photovoltaic Cell and the losses occurring in a Photovoltaic cell.
7. Write about the basic assumptions of Drude and Lorentz model, also give the merits and demerits. Derive
the expression for electrical conductivity of metals based on the model.

Page 4 of 4
 DEPARTMENT OF PHYSICS AND NANOTECHNOLOGY
SRM INSTITUTE OF SCIENCE AND TECHNOLOGY

18PY103J – Physics: Semiconductor Physics

Module-III, Lecture-16

Numerical based on Solar Cell &

Electrical Conductivity

1
18PYB103J Module-III Lecture-16
 Numerical based on Solar Cell
& Electrical Conductivity
Solved Numerical:

1. Determine the Open-Circuit Voltage Voc of the solar cell, if

Saturation Current (Is) = 1x10-10 A, Light Generated Current(IL)
= 0.5 A, Ideality Factor (n) =1, and Temperature (T) = 300 K

Solution: 𝑛𝑘𝑇
Open-Circuit Voltage VOC = ln(1 + IIL)
𝑞 S

1𝑥1.38𝑥10−23 𝑥300 0.5

= −19
ln(1 + 1𝑥10 −10 )
1.61𝑥10

= 0.57V

18PYB103J Module-III Lecture-16

 Numerical based on Solar Cell
& Electrical Conductivity

2. Determine the Fill Factor FF of the solar cell, if Short-Circuit

Current (Isc) = 2.75 A, Open-Circuit Voltage (Voc) = 0.6V, Current
at Maximum Power (Im) = 2 A and Voltage at Maximum Power
(Vm) = 0.5V

Solution:
𝐼𝑚 𝑉𝑚 2𝑥0.5
Fill Factor 𝐹𝐹 = =
𝐼𝑠𝑐 𝑉𝑜𝑐 2.75𝑥0.6

= 0.606

18PYB103J Module-III Lecture-16

 Numerical based on Solar Cell
& Electrical Conductivity

3. Determine the Conversion Efficiency  of the solar cell, if Short-

Circuit Current (Isc) = 3.5A, Open-Circuit Voltage (Voc) = 0.6V,
Fill Factor (FF) = 0.7 and Input Power (Pin) = 10W

Solution:
𝐼𝑠𝑐 𝑉𝑜𝑐 𝐹𝐹
Efficiency η = x 100%
𝑃𝑖𝑛
3.5𝑥0.6𝑥0.7
= x 100%
10

= 14.7%

18PYB103J Module-III Lecture-16

 Numerical based on Solar Cell
& Electrical Conductivity

4. Determine the Conductivity () of the Intrinsic Semiconductor.

The given parameters are: μe = 0.145 m2/V-s; μh= 0.055 m2 /V-s;
ni= 1.5625×1016/m3 ; q = 1.602×10-19 C.

Solution:
Conductivity 𝜎 = 𝑛𝑒[𝜇ℎ +𝜇ℎ ]

= 1.5625𝑥1016 𝑥1.602𝑥10−19 [0.145 + 0.055]

= 5.0𝑥10−4 𝑚ℎ𝑜𝑠/𝑚

18PYB103J Module-III Lecture-16

 Numerical based on Solar Cell
& Electrical Conductivity

5. The resistivity of intrinsic germanium at 300 K is 0.47 m. If the

electron and hole mobilities are 0.38 m2/V-s and 0.18 m2/V-s,
then calculate the Intrinsic carrier density (n) at 300 K.

Solution:
Conductivity 𝜎 = 𝑛𝑒[𝜇ℎ +𝜇ℎ ]
𝜎
𝑛=
𝑒[𝜇ℎ +𝜇ℎ ]
1Τ0.47
=
1.602𝑥10−19 [0.38 + 0.18]

= 2.3𝑥1019 𝑚3
18PYB103J Module-III Lecture-16
 Numerical based on Solar Cell
& Electrical Conductivity
Unsolved Problems:

1. Determine the Open-Circuit Voltage Voc of the solar cell, if Saturation Current
(Is) = 0.75x10-10 A, Light Generated Current(IL) = 0.65 A, Ideality Factor (n) =
0.9, and Temperature (T) = 310K. [Ans: Voc = 0.55V]

2. Determine the Fill Factor FF of the solar cell, if Short-Circuit Current (Isc) =
2.25 A, Open-Circuit Voltage (Voc) = 0.75V, Current at Maximum Power (Im) =
1.5 A and Voltage at Maximum Power (Vm) = 0.85V. [Ans: FF = 0.7556]

3. Determine the Conversion Efficiency  of the solar cell, if Short-Circuit

Current (Isc) = 2.8A, Open-Circuit Voltage (Voc) = 0.55V, Fill Factor (FF) = 0.8
and Input Power (Pin) = 10W. [Ans:  = 12%]

4. The following data are given for an intrinsic semiconductor at 27°C; ni =

2.4×1019m–3, μe = 0.39 m2/V-s and μh = 0.19 m2/V-s. Calculate the conductivity
of the intrinsic semiconductor. [Ans:  = 2.22 Ω-1m-1]

18PYB103J Module-III Lecture-16

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 0 SRM INSTITUTE OF SCIENCE AND TECHNOLOGY, RAMAPURAM CAMPUS,
CHENNAI

DEPARTMENT OF PHYSICS

QUESTION BANK

18PYB103J- SEMICONDUCTOR PHYSICS

UNIT 4

PART A-ONE MARK QUESTIONS

QUESTION QUESTIONS
NO.
1 In a …………., the electrons are ejected from
photosensitive surface and are amplified within the cell.
(A) Photodiode
(B) Bolometer
(C) Electrode
(D) photomultiplier tube

2 Alkali metals and their oxides are best ………… materials.

(A) Photo emissive
(B) Conducting
(C) Insulating
(D) Semiconducting

3 The crystalline solids absorbs energy and re-emits it in the

visible region of the spectrum is called ……………...
(A) Luminescence
(B) Photon emission nn
(C) Phonon emission
(D) Radiation

4 ……………….. Spectroscopy can be used to determine the

concentration of absorbs in a solution.
(A) Gamma
(B) IR
(C) Microwave
(D) UV Vis

5 An ideal monochromator should have an ………… narrow

effective bandwidth.
(A) infinitely
(B) Small
(C) Zero
(D) finite
6 ……………….. is an instrumentation used to determine the
traps in semiconductors
(a) TGA
(B) DLTS
(C) DTA
(D) IR
7 …………. is used for separating source radiation wavelengths.
(A) Detector
(B) Antenna
(C) Monochromator
(D) Display device

8 In ……………. the conductivity increases with increasing

temperature

(A) IR
(B) DTA
(C) Phonos
(D) Semiconductors

9 In ………………. semiconductor, the Hall coefficient is negative

(A) P-type
(B) Dilute
(C) N-type
(D) Magnetic

10 The given diagram represents …………….. effect

(A) Hall effect

(B) Thermoelectric effect
(C) Faradays effect
(D) Photoelectric effect

11 The given diagram represents instrumentation of ……………

spectroscopy

(A) IR
(B) NMR
(C) Gamma ray
(D) UV

12 The given diagram represents …………….. experiment

 (A) Four probe
(B) Hall effect
(C) Two probe
(D) DMS

13 ………………… law states that, when a beam of monochromatic

light passes through an absorbing medium, the rate of decrease
in intensity with the thickness of the medium, is proportional to
the intensity of light.

(A) Snell’s
(B) Beer’s
(C) Lambert’s
(D) Photoelectric

14 A ……………….. is a method of determining quickly whether a

semiconductor sample is n (negative) type or p (positive) type

(A) Electrolysis
(B) Hot probe method
(C) Hydrogenation
(D) Rectification

15 The ……………….. method is used to measure the resistance

(A) Hydrogenation
(B) Rectification
(C) Vander Pauw
(D) Electolysis

16 The energy gap in a semiconductor is also called as ………….

(A) Forbidden gap

(B) Large gap
(C) Narrow gap
(D) Electrical gap
17 The ……………… is the ratio of the voltage measured across
the sample to the current driven through the sample
(A) Capacitance
(B) resistance
(C) Inductance
(D) capacitor

18 The given diagram represents …………… method

(A) Vander Pauw

(B) Electolysis
(C) Hydrogenation
(D) Rectification

19 For determining the resistivity of a semiconductor, the diameter

of contacts between the probe and the semiconductor should be
………………………. the gap between the probes.

(A) Smaller Than

(B) Greater than
(C) Equal to
(D) Double

20 ……………….. is a technique for characterizing semiconductor

materials and device, where the applied voltage is varied, and
the capacitance is measured and plotted as a function of
voltage.

(A) Capacitive – voltage profiling

(B) Current profiling
(C) Voltage profiling
(D) Baising
QUESTION QUESTIONS
NO.
21 Identify the resistivity measurement by four probe linear
method
(A)

This technique is commonly used to measure the resistivity

and the Hall coefficient of a sample

(B)

This technique involves using four equally-

spaced,known as a four-point probe to make electrical
contact with the material.

(C)

The method of determining quickly whether a

semiconductor sample is n type or p type. A voltmeter or
ammeter is attached to the sample, and a heat source, such
as a soldering iron, is placed on one of the leads.

(D)
 This Method is one of the standard and most commonly
used method for the measurement of resistivity of very high
resistivity samples like sheets/films of polymers

22 Illustrate the properties of Photoluminescence ………………

(I) The Principle of this method is based on the absorption

of ultraviolet light or visible light by chemical
compounds, which results in the production of distinct
spectra. Spectroscopy is based on the interaction
between light and matter.
(II) It is a process in which a molecule absorbs a photon in
the visible region, exciting one of its electrons to a
higher electronic excited state, and then radiates a
photon as the electron returns to a lower energy state.
(III) This method is routinely used in analytical chemistry for
the quantitative determination of different analytes,
such as transition metal ions, highly conjugated organic
compounds, and biological macromolecules.
(IV) It is the spontaneous emission of light from a material
following optical excitation. It is a powerful technique to
probe discrete energy levels and to extract valuable
information about semiconductor sample composition,
quantum well thickness or quantum dot sample mono
dispersity.
(A) All the four Incorrect
(B) Both II and III correct
(C) Both III and I correct
(D) Both II and IV correct

23 Analyse the device Photoemissive cell

I) This cell is commonly known as a phototube, makes use

of the photoelectric effect, the phenomenon whereby light-
sensitive surfaces give off electrons when struck by light.
These cells are sometimes called photocells or electric eyes.
(II) This is is an electrical device that converts the energy of
light directly into electricity by the photovoltaic effect,
which is a physical and chemical phenomenon.
 (III) In this cell the photons passed their energy in fixed
quantities to atoms inside the metal, knocking some of
their electrons out of them, so producing an electric
current. The photons need a minimum threshold
frequency to free electrons and produce an effect,
known as the work function.
(IV) These are the class of vacuum tubes, and more
specifically vacuum phototubes, are extremely
sensitive detectors of light in the ultraviolet, visible, and
near-infrared ranges of the electromagnetic spectrum.
These detectors multiply the current produced by
incident light by as much as 100 million times or 108
(i.e., 160 dB)[1], in multiple dynode stages
(A) Both I and II correct
(B) Both I and III correct
(C) Both II and IV correct
(D) Both I and II correct

24 Point out the applications of Uv- Vis Spectroscopy.

(I) Quantitative and not Qualitative analysis.

(II) Determination of molecular weight.
(III) Determination of molar absorbance coefficient.
(IV) Determination of known compound.
(V) Detection of non-functional group.
(VI) Detection of isomers and geometrical isomers.
(VII) Detection of impurities.

(a) The statements I, II, VII and V are correct

(b) The statements I, II, VI and V are correct
(c) The statements II, III,VI and VII are correct
(d) The statements I, V, VI and VII are correct

25 If the drift velocity of holes under a field gradient of 100v/m

is 5m/s, the mobility is
A. 0.05
B. 0.55
C. 500
D. 50

26
 A silicon sample is uniformly doped with 1016 phosphorus
atoms/cm3 and 2 × 1016 boron atoms/cm3. If all the dopants
are fully ionized, the material is:
A. n-type with carrier concentration of 3 × 1016/cm3
B. p-type with carrier concentration of 1016/cm3
C. p-type with carrier concentration of 4 × 1016/cm3
D. Intrinsic

27. In Photoluminescence process, electrons change energy

states by either resonantly gaining energy from
absorption of a ……………. or losing energy by
emitting ……………….
A. Mesons
B. Phonons
C. Baryons
D. Photons

In hot probe technique, ……………….. probe is connected

28.
to the positive terminal of the meter while the
…………………. probe is connected to the negative
terminal.
A. Cold, Hot
B. Thick, Thin
C. Thin, Thick
D. Hot, Cold

29 The wavelength range used in UV – Vis. Spectrophotometer

is ………………………….

A. 200 nm to 2500 nm
B. 200 nm to 3500 nm
C. 200 nm to 4000 nm
D. 400 nm to 700 nm

The Lambert law and Beer law may be combined into single
30 relationship which shows the effect of both ………………..
and ……………of absorbing substance.
A. Composition, Refractive Index
B. Thickness, Concentration
C. Elasticity, Plasticity
D. Hardness, Isotropy
31. What is the unit of absorbance which can be derived from
Beer Lambert’s law?
A. Lmol-1cm-1
B. gm-1cm-1
C. cm
D. No unit

32.
In conventional DLTS the capacitance transients are
investigated by using a ……………………………
A. Hartley oscillator
B. Cathode Ray Oscilloscope
C. Lock-in- Amplifier
D. Intermediate frequency amplifier

The temperature range of the most of the semiconductors to

33. characterize in DLTS is ………………..
A. 77 K to 380 K
B. 87 K to 380 K
C. 77 K to 383 K
D. 77 K to 400 K

The DLTS is used to characterize ………………….

34. A. Conductors
B. Semiconductors
C. Insulators
D. Superconductors

To characterize the material in DLTS, it is necessary to

35. form ……………………
A. Thin film
B. Nano particles
C. PN junction
D. Solution of the material

36. ……………….. is not taking part in CV measurement

A. Accumulation
B. Depletion
C. Inversion
D. Emission
37. The leakage current occurs in ……………………….

A. Forward Bias
B. Reverse Bias
C. Both forward and reverse bias
D. LDR

C-V measurements are capable of yielding information

38. about the ………………………. and concentration of charge
carriers

A. Drift potential
B. Diffusion potential
C. Bonding
D. Crystal structure

39. The exponential ………………….. in current steeps as the

diode current becomes limited by the resistance of
undepleted region of diode
A. Increase
B. Decrease
C. Zero
D.equals

40. In linear four probe method the tip of probe diameter is

usually ………………….. than the probe spacing
A. Larger
B. Cooler
C. Hotter
D. Smaller

41. Van der Pauw technique measures the resistivity and

………………. of the sample
A. Coefficient of Friction
B. Absorption
C. Hall coefficient
D. Emission

42.
 To identify the nature of semiconductor (p-type or
n–type) …………….. methods will be used,
A. Two-point method
B. Linear four-point method
C. Van der Pauw four-point method
D. Hall effect
43.
The leakage current occurs in ………………………
A. Forward Bias
B. Reverse Bias
C. Both forward and reverse bias
D. LDR

QUESTION QUESTIONS
NO.

44 Hall Effect is defined as

(I) The production of a voltage difference across an
electrical conductor, transverse to an electric current
in the conductor and to an applied magnetic field
perpendicular to the current.
(II) The production of a magnetic field across an electrical
conductor, transverse to an electric current in the
conductor and to the applied voltage perpendicular to
the current.
(III) The production of a current across an electrical
conductor, transverse to voltage in the conductor and to
an applied magnetic field perpendicular to the current.
(IV) The production of a potential difference across an
electrical conductor when a magnetic field is applied in
a direction perpendicular to that of the flow of current..
(a) Both I and III correct
(b) All the four Incorrect
(c) Both II and III correct
(d) Both I and IV correct

The Hall coefficient of sample (A) of a semiconductor is

measured at room temperature. The hall coefficient of (A)
at room temperature is 4x10-4 m3 coulomb-1 .The carrier
concentration in sample A at room temperature is
45.
A. ~ 1021 m–3
B. ~ 1020 m–3
 C. ~ 1022 m–3
D. ~ 1023 m–3

Applications of Hall effect

46. (I) The probes are often used as magnetometers, i.e. to
measure magnetic fields, or inspect materials (such
as tubing or pipelines) using the principles of magnetic
flux leakage. These devices produce a very low signal
level and thus require amplification.
(II) This converts mechanical energy into electrical
energy, which is why it's useful during a power outage.
This is when a current flows through a coil on a
stovetop, which produces a magnetic field.
(III) These sensors are used to time the speed of wheels
and shafts. These are used to detect the position of
permanent magnet in brushless electric DC motors.
The sensors are embedded in digital electronic
devices along with linear transducers.
(IV) This can be used to solve complex electrostatic
problems involving unique symmetries like cylindrical,
spherical or planar symmetry. This can be used to
simplify evaluation of electric field.
(A) Both III and IV are correct
(B) Both I and III are correct
(C) All the four correct
(D) Both II and III are correct

The given diagram represents ……………… effect

47.

(a) Hall effect

(b) Thermoelectric effect
(c) Faradays effect
(d) Photoelectric effect

48.
Hot probe method
 (I) This method is routinely used in analytical chemistry for
the quantitative determination of different analytes,
such as transition metal ions, highly conjugated organic
compounds, and biological macromolecules.

(II) This method of determining quickly whether a

semiconductor sample is n (negative) type or p
(positive) type. A voltmeter or ammeter is attached to
the sample, and a heat source, such as a soldering iron,
is placed on one of the leads.
(III) This technique is commonly used to measure the
resistivity and the Hall coefficient of a sample
(IV) The conventional characterization method enables only
the definition of a semiconductor type, P or N, by
identifying the majority of the charged carriers
(A) Both II and IV correct
(B) Both III and IV correct
(C) Both I and IV correct
(D) All the four correct

49.
Vander paw method.

(I) This Method is a technique not commonly used to

measure the resistivity and the Hall coefficient of a
sample.
(II) The doping type i.e. whether it is a P-type or N-type
material
(III) The sheet carrier density of the majority carrier cannot
be determined.
(IV) The charge density and doping level can be found
(V) The mobility of the majority carrier can be found
(VI) This method involves applying a current and measuring
voltage using four small contacts on the circumference
of a flat, arbitrarily shaped sample of uniform thickness.
(VII) This method is particularly useful for measuring very
small samples because geometric spacing of the
contacts is unimportant.
(A) All are correct
(B) All are Incorrect
(C) II,IV,V,VI and VII are correct
(D) I, II, III, VI and VII are correct

Two probe method

50. (I) This converts mechanical energy into electrical energy,
which is why it's useful during a power outage. This is
 when a current flows through a coil on a stovetop, which
produces a magnetic field.

(II) The production of a voltage difference across an

electrical conductor, transverse to an electric current in
the conductor and to an applied magnetic field
perpendicular to the current.
(III) This method is one of the standard and most commonly
used method for the measurement of resistivity of very
high resistivity samples like sheets/films of polymers.
(IV) 1. Remote sensing areas. 2. Resistance thermometer.
3. Induction hardening processes. 4. Precise estimation
of geometrical factors. 5. Characterization of fuel cells
bipolar plates
(A) Both II and IV correct
(B) Both III and IV correct
(C) Both I and IV correct
(D) All the four correct

51. The basic components of UV-Vis Spectrometer.

(A) They have three basic parts: (1) a large magnet, which
is responsible for the static magnetic field H0, (2) a
transmitter, which provides the alternating field H1, and
(3) a receiver.
(B) This consists of three basic components: radiation
source, monochromator, and detector.The common
radiation source for the spectrometer is an inert solid
heated electrically to 1000 to 1800 °C.
(C) They have five main components: the light source,
monochromator, sample holder, detector, and
interpreter. The standard light source consists of a
deuterium arc (190–330 nm) and a tungsten filament
lamp (330–800 nm), which together generates a
light beam across the 190–800 nm spectral range.
(D) A LASER source is needed to excite the target species.
A filter collects the scattered light (Stokes) and filters
out the Raleigh and Anti Stokes light.

What is the unit of molar absorptivity or absorptivity which is

52. used to determine absorbance A in Beer Lambert’s formula?
i) L mol-1 cm-1
ii) L gm-1 cm-1
 iii) Cm
iv) No unit

Transmittance is given as T = P/Po. If Po is the power

incident on the sample, what does P represent?
53. i) Radiant power transmitted by the sample
ii) Radiant power absorbed by the sample
iii) Sum of powers absorbed and scattered
iv) Sum of powers transmitted and reflected

Which of the following is not true about Absorption

spectroscopy?
i) It involves transmission
54.
ii) Scattering is kept minimum
iii) Reflection is kept maximum
iv) Intensity of radiation leaving the substance is an indication
of concentration
55. The representation of Beer Lambert’s law is given as A =
abc. If ‘b’ represents distance, ‘c’ represents concentration
and ‘A’ represents absorption, what does ‘a’ represent?
a) Intensity
b) Transmittance
c) Absorptivity
d) Admittance

56. Which of the following is not a limitation of Beer Lambert’s

law, which gives the relation between absorption,
thickness, and concentration?
a) Concentration must be lower
b) Radiation must have higher bandwidth
c) Radiation source must be monochromatic
d) Does not consider factors other than thickness and
concentration that affect absorbance

In which of the following ways, absorption is related to

57.
transmittance?
a) Absorption is the logarithm of transmittance
b) Absorption is the reciprocal of transmittance
c) Absorption is the negative logarithm of transmittance
d) Absorption is a multiple of transmittance

58. Beer Lambert’s law gives the relation between which of the
following?
a) Reflected radiation and concentration
b) Scattered radiation and concentration
c) Energy absorption and concentration
d) Energy absorption and reflected radiation

59. In photo emissive transducers, electrons are attracted by

…………………
a) Cathode
b) Anode
 c) Grid
d) Body

60. During Einstein’s Photoelectric Experiment, what changes

are observed when the frequency of the incident radiation is
increased?
a) The value of saturation current increases
b) No effect
c) The value of stopping potential increases
d) The value of stopping potential decreases

61.
What is the time lag between the incidence of photons and
the ejection of photoelectrons?
a) Greater than 10-5 s
b) Between 10-5 s and 10-9 s
c) Less than 10-9 s
d) 1 second

62. How does the intensity affect the photoelectric current?

a) As intensity increases, the photoelectric effect increases
b) As the intensity increases, the photoelectric effect decreases
c) As the intensity decreases, the photoelectric effect
becomes twice
d) No effect
63. Identify the correct order of frequencies.

a) v1 > v2 > v3
b) v2 > v3 > v1
c) v3 > v2 > v1
d) v1 > v3 > v2

64. The work function of lithium is 2.5 eV. The maximum

wavelength of light that can cause the photoelectric effect in
lithium is ………………..
a) 3980 Å
b) 4980 Å
c) 5980 Å
d) 6980 Å

65. Light of wavelength 3500 Å is incident on two metals A and

B. Which metal will yield more photoelectrons if their
work functions are 5 eV and 2 eV respectively?
a) A
b) B
c) A & B
d) C

66. The Kinetic energy of a photoelectron emitted on shining a

light of wavelength 6.2 X 10-6 m on a metal surface of
work function 0.1 eV is ………………..
a) 0.01 eV
b) 0.02 eV
c) 0.1 eV
d) 1 eV
 SRM INSTITUTE OF SCIENCE AND TECHNOLOGY, RAMAPURAM CAMPUS,
CHENNAI

DEPARTMENT OF PHYSICS

QUESTION BANK

18PYB103J- SEMICONDUCTOR PHYSICS

UNIT 5

PART A-ONE MARK QUESTIONS

QUESTION QUESTIONS
NO.
1 Nano structures have size in between…….
A. 1 and 100 A0
B. 1 and 100 nm
C. 100 and 1000 nm
D. 100 and 1000A0

2 The probe of scanning tunneling microscope is as sharp

as……………
A. An atom at the tip
B. Many atoms at the tip
C. A needle
D. Knife

3 Nano particles are special mainly because of their…….

A. Surface area
B. Surface charge
C. Volume
D. Force

4 The colour of the nano gold particle is……..

A. Yellow
B. Orange
C. Red
D. Variable

5 In a quantum wire, the material size is

reduced…………………….
A. In three directions
B. In two directions
C. In one directions
D. In zero directions
6 Carbon nanotube reactivity is related to……………….
A. Volume
B. Length
C. Diameter
D. Area
7 Carbon nano tubes are the………………… form of graphite
A. Cylinder
B. Cube
C. Embeded
D. Sheet

8 In how many methods the CNT can be prepared?

A. 1
B. 2
C. 3
D. 4

9 In CVD chamber, the precursors are introduced to the reaction

chamber in the ………….. state
A. Liquid
B. Solid
C. Gaseous
D. Semi solid

10 X-ray Diffraction methods are not used to identify the physical

properties of which of the following?
A. Metals
B. Liquids
C. Polymeric materials
D. Solids
ANSWER: B

11 Which of the following is used in electron microscope?

A. Electron beams
B. Magnetic fields
C. Light waves
D. Electron beams and magnetic fields

12 Which among the following helps us in getting a 3D picture of

the specimen?
A. TEM
B. SEM
C. Compound microscope
D. Simple microscope
13 The secondary electrons radiated back in scanning
microscope is collected by?
A. Specimen
B. Anode
C. Vacuum chamber
D. Cathode

14 The resolving power of TEM is derived from……….

A. Electrons
B. Specimens
C. Power
D. Ocular system
15 AFM stands for………
A. Auto focusing microscope
B. Antenna focusing microscope
C. Atomic force microscope
D. Atomic focusing microscope

16 The physical parameter that is probed in AFM resulting from

different interactions is -----------
A. Charge
B. Force
C. Potential
D. Field

17 A……………………… is an interface that occurs between two

layers or regions of dissimilar semiconductors
A. Hetero junction
B. Homo junction
C. PN junction
D. Barrier

18 .………. is then example for hetero junction materials.

A. Ge
B. Ga
C. Si
D. GaAlAs

19 Exciton can move freely in two directions only.

A. Quantum well
B. Quantum wire
C. Quantum dot
D. Quantum spin

20 Tensile strength of grapheme exceeds……

A. 1TPa
B. 2TPa
C. 5TPa
D. 0.5TPa
QUESTION QUESTIONS
NO.
21 Carbon nano tubes are the sheet form of graphite about…..
A. 0.1 nm
B. 0.2 nm
C. 0.3 nm
D. 0.4 nm

22 To grow single rather than multi walled

nanotubes…………….
A. Require semi metal catalyst
B. Require non metal catalyst
C. Require metal catalyst
D. Does not require any catalyst

23 In PVD chamber, the precursors are introduced to the

reaction chamber in the ………….. state
A. Liquid
B. Solid
C. Gaseous
D. Semi solid

24 X-Ray diffraction techniques provide …………. information

about the compounds present in a solid sample
A. Quantitative
B. Qualitative
C. Quantitative and Qualitative
D. Either quantitative or qualitative

25 Bands of alternating light and dark lines that are formed by

inelastic scattering interactions that are related to
atomic spacing in the specimen are called …………..
A. Auger bands
B. Bragg bands
C. Lorentz bands
D. Kakuchi bands

26. Electrons are caused by the de-energization of the

specimen atom after a secondary electron is
produced………..
A. Auger
B. Bragg
 C. Lorentz
D. Kakuchi

27. The resolving power of a …………………….. electron

microscope derived from the electrons that pass
through the specimen.
A. TEM
B. SEM
C. AFM
D. XRD

28. AFM tip should have a radius of curvature of………………

A. > 20-50 nm
B. < 20-50 nm
C. 100 nm
D. 100 mm-150 mm

29. The properties like dispersibility, conductivity, etc changes

on varying the ………
A. Size
B. Composition
C. Surface properties
D. Electric field

30. Which of the following is an example of top-down approach

for the preparation of nanomaterials?
A. Gas phase agglomeration
B. Molecular self - assembly
C. Mechanical grinding
D. Molecular beam epitaxy
QUESTION QUESTIONS
NO.
The four types of artificial nanomaterials are ….
31
A. Carbon – based, non – metallic, composites and
ceramics
B. Carbon – based, metallic, composites and
ceramics

C. Carbon – based, non – metallic, composites and

dendrimers

D. Carbon – based, metallic, composites and

dendrimers

A nanometer sized conductive island is connected between

32.
two contacts via tunnel barriers, in the presence of a third
gate electrode. Such a device is often called a single
electron transistor, This is because at low bias voltage,
A. It can be deliver only a single electron of current/second
B. It can deliver an electron flow defined with a precision
better than 1 electron
C. The Charge on the islands is defined with a
precision better than 1electron
D. The charge on the island is exactly 1 electron

The kinetic energy of electrons in monolayer graphene is

33
proportional to…..
A. The value of wavevector, k
B. The square value of wavevector, k2
C. The value of electron effective mass, m*
D. The reciprocal value of electron effective mass, 1/m*

CNTs process a very high Young’s modulus, due to

34.
A. 4 valence electronic bonds of carbon atoms that equally
share stress in any directions
B. A perfect construction in tubular form
C. Covalent sp2 bonds formed between the individual
carbon atoms
D. Delocalized π- electrons that travel across several
carbon atoms to increase strength
 ANSWER: C

35. A plasma assisted CVD process

A. Is made at lower temperature than a CVD process
B. Is made at higher temperature than a CVD process

C. Is based on the sputtering of a target

D. Is based on the decomposition of gaseous precursors

36. When Scanning tunneling microscopy reveals periodic

structures with atomic dimensions, what is exactly seen?
A. The atomic lattice
B. Electronic density of states modulations associated
to the atomic lattice
C. Fermi level modulations associated to the atomic lattice
D. The electron diffraction pattern associated to the atomic
lattice

PART – B

1. Discuss about quantum well, quantum wire and quantum dot.

2. Write the applications of AFM.
3. Write any four Applications of Powder X-ray diffraction method.
4. Write the applications of SEM and TEM.
5. Write a short note on CNT.
6. Write the properties of CNT.
7. Write any four Applications of CNT.

PART -C
1. Explain the working principle of Scanning Electron Microscopy(SEM).
2. Explain the working principle of Transmission Electron Microscopy(TEM).
3. Write the principle of Atomic Force Microscopy (AFM). Explain the basic components and
working of AFM. Write the merits, demerits and Applications of AFM.
4. What is Carbon Nano tube (CNT)? Explain the structure, Type, properties, synthesis methods
and applications of CNT.
5. Explain the Physical Vapour Deposition (PVD) method of material synthesis.
6. Explain the Chemical Vapour Deposition (CVD) method of material synthesis.
7. What is Nano structured materials ( Quantum well, Quantum Dot, and Quantum wire)?
8. Explain the synthesis methods for Nano structured materials. Explain density of state of zero
dimension.
9. Explain Powder X-Ray diffraction method and write the applications of Powder XRD?