Engg Physics QB
Engg Physics QB
UNIVERSITY
UNtATCHED EXCULLKNCE, UN RIYeD POTENT
SAL,
24BTPHI03
Engineering Physics
2 Marks Questions
7. Mention the expression for time independent Schrondinger's wave equation for a
5 Marks Questions
Numerical Problems
3eV? Given the mass
of a proton whose energy is
1
Question Bank
Department of Physics
SAPTHAGIRIPS
UNIVERSITY
energy of 2000eV.
3. Calculate the kinetic energy of an clectron of wavelength 18nm.
4. Calculate the de Broglie wavelength of an electron moving with 1/10" part of the
velocity of the light.
5. Aneleciron has a speed of 4.8 x 10° m/s accurate to 0.012%. With what accuracy can
be located the position of electron?
0.005%.What willbe the uncertainty that arises in the measurement of its position?
7. Ina measurement of position and velocity of an electron moving with the speed of 6x
10° m/s, calculate the highest accuracy with which its position could be determined if
the inherent error in the measurement of its velocity is 0.0 1% for the speed stated.
8. Calculate the energy in eV for the first excited state of an electron in an infinite
11.The ground state energy of an electron in an infinite well is 5.6 X 10° eV. What will
be the ground state energy if the width of the well is doubled?
2 Marks Questions
5 Marks Questions
2
Question Bank
Department of Physics
SAPTHAGIRINPS
UNIVERSITY
USYCD EXOLLLENCE UNIKSITSD POTENTAL
24BTPHI03
Engineering Physics
2. Detine Fermi factor and explain its dependence on temperature and energy level.
What are the differences between polar and non-polar
3. Define Dielectric Polarization.
molecules?
the dielectric material, derive Clausius-Mosoti
4. Using the internal fieldexpression of
equation.
in dielectric materials.
types of polarization mechanisms
J. Explain the different
Numerical Problems
0.02eV above the
of an electron occupying an energy level
1. Calculate the probabilities at 200K.
the fermi level
an energy level 0.02eV below
fermi level and that in being occupied at
at 0.2eV below fermi
level
that an energy level
2. Find the probability
and I 000K.
temperatures 30OK
is 2.l eVwhat are the
energies for which the probabilities
in potassium
3. The fermi level
are 0.99, 0.0l and 0.5?
of occupancy at 300K
that a state with an energy
which there is I% probability
4. Find the temperature at
0.5eV above fermi energy is occupied. 500V/mm if
by an electric field of strength
the polarization produced in a crystal
5. Find
it has a dielectric
constant of6?
field of 1000V/m
and the resulting
to an electric
6. Ifa NaClcrystal is subjected constant of NaCl.
the dielectric
is 4.3X 10 C/m, calculate
polarization
has polarizability
7X10* Fm. Assuming the
dielectric material
7. Anelemental solid
constant for the material
if
calculate the dielectric
internal field to be Lorentz filed,
has 3X 10 atoms/m.
the material
Physies
Module-3 Semiconductor
2 Marks Questions
are the two types of semiconductors?
1. What are semiconductors? What
Give one example.
2, Whatare intrinsic semiconductors? extrinsic
What are the two types of
semiconductors?
with parameters.
the expression for electron concentration
6. Mention
with parameters.
7. Mention the expression for hole concentration
and Hall voltage?
8. What is Hall effect
of Hall effect.
any two applications
9, What is HallCo-efficient? Mention
3
Question Bank
Department of Physics
SAPTHAGIRINPS
UNIVERSITY
UMATCHDExGELLECE. UNLINMto oTitAL
24BTPHI03
Engineering Physics
5 Marks Questions
applications.
Numerical Problems
1. For intrinsic GaAs, the room temperature electrical conductivity is 10°/Qm:the
clectron and hole mobilities are respectively 0.85m²/Vs and 0.04 m²/Vs. Computethe
intrinsic carrier concentration at room temperature.
2. The following data are given for intrinsic Ge at 300K., n, = 2.4 X 10/m'.
Lo=0.39m²/Vs. u, =0.19 m´/Vs. Calculate the resistivity the sample.
of
3. The resistivity of the intrinsic Ge at 27'C is equal to 0.47 S2m.Assuming electron and
hole mobilities as 0.38 and 0.1 8m-/Vs respectively, calculate the intrinsic carrier
density.
4. The Hallco-efficient ofa material is -3.68X10 m°/C. What is the type of charge
carriers? Also Calculate the carrier concentration.
experiment having magnetic field of 0.5 T and the currentdensity is 500 A/m² Find
the Hall voltage if the sample is 3 mm wide.
Module-4 Superconductivity
2 Marks Questions
24BTPHI03
Engineering Physics
4. Write any four superconducting materials along with their critical temperature.
I
9. Write a short note on Type ll (soft) Superconductor with diagram.
5 Marks Questions
1. Explain Meissner's Effect with diagram.
Numerical Problems
1. A
Linear Operator 'X`
operates such that X |0) =|1) and X |1) =|0). Find
representation of'X. the matrix
2. Given W) = =|B,
and |9) Prove that (/|4) -(0l)
3 3
3. Given,
Aacheck if the given matrix is Hermitian.
Department of Physics
Question Bank
6
SAPTHAGIRINPS
UNIVERSITY
UtATOiED EXCELLENCE UNUMTEO POrNTAL
Engineering Physics
24BTPHI03
4. Prove U =| is Unitary.
-|
5. Show that the Matrix U= is unitary.
6. Find the inner product of states |l) and |0) and draw conclusions on the result.
7. Using Matrix multiplication show that on applying Hadamard gate twice to a |0)
results in its original state.