Power Up Your Design

Forum - Drives
18-19 November 2024
Andreas Hoffmann - System Architect Drives

public 1
Table of contents
1 22 kW GPD reference design 2

1 22 kW GPD reference design 2

2 Deep Dive - 2 Level slew rate control 12

2 Deep Dive - 2 Level slew rate control 12

3 Deep Dive - 1700 V CoolSiC auxiliary supply 26

3 Deep Dive - 1700 V CoolSiC auxiliary supply 26

4 Motor integrated servo drive reference design 30

4 Motor integrated servo drive reference design 30

5 Outlook at SiC Gen2 38

5 Outlook at SiC Gen2 38

6 Top side cooled products 42

6 Top side cooled products 42

2024-11-19 public Copyright © Infineon Technologies AG 2024. All rights reserved. 2

Quick facts for Infineon's Industrial Drives reference design
Parameters Values

Input

Voltage 340 – 480 Vrms

Current 70 Arms

DC bus voltage 460 V – 670 V typ.

4 kHz nom
Switching frequency
16 kHz max

Rated output Current 60 Arms

Application

2024-11-19 public Copyright © Infineon Technologies AG 2024. All rights reserved. 3

Combining Infineon's newest technologies of IGBT7, gate driver,
current sensor and control in one system

Infineon products Features

IMBF170R1K0M1 CoolSiC MOSFET enables direct

1.7kV CoolSiC MOSFET drive by most fly-back controllers

TLI4971-A120T5 XENSIV for measuring high

Current Sensor currents with minimal power loss

1ED3240MC12H Optimal EMI performance and

Gate Driver reduced power loss

FP100R12W3T7_B11 High current and high power

IGBT Module density

2024-11-19 public Copyright © Infineon Technologies AG 2024. All rights reserved. 4

The Easy3B with IGBT7 package enables compact design with
high current and power density

Key features Features of the Easy3B package

‒ PressFIT pins for automated and reliable mounting process

FP100R12W3T7_B11
IGBT Module ‒ Two Easy 2B size DCB into one single package
‒ Bonding wire between DCBs possible
TLI4971
Current Sensor
‒ Same height as other Easy packages
‒ Housing material has higher
CTI value than Easy 2B
1ED3240MC12H
Gate Driver ‒ Flexible pin grid system

IMBF170R1K0M1
1.7kV CoolSiC MOSFET

2024-11-19 public Copyright © Infineon Technologies AG 2024. All rights reserved. 5

The Easy3B with IGBT7 package enables compact design with
high current and power density

Key features Trenchstop allows to increase power density

‒ Enhanced controllability of dV/dt optimized for

FP100R12W3T7_B11 drive applications
IGBT Module
‒ Overload operation up to 175 °C

TLI4971 ‒ Low VCE,sat

Current Sensor

1ED3240MC12H
Gate Driver

IMBF170R1K0M1
1.7kV CoolSiC MOSFET

2024-11-19 public Copyright © Infineon Technologies AG 2024. All rights reserved. 6

Infineon's XENSIV TLI4971-A120T5
Measurement of High Currents and Protection in One Device

Key features Features & Benefits

FP100R12W3T7_B11
IGBT Module
Magnetic coreless differential sensor

EMI robust
TLI4971
Current Sensor

Power Package – low losses

1ED3240MC12H
Gate Driver

Best-in-class temperature and lifetime

IMBF170R1K0M1
accuracy – improve and stable motion
1.7kV CoolSiC MOSFET
control

2024-11-19 public Copyright © Infineon Technologies AG 2024. All rights reserved. 7

Infineon's XENSIV TLI4971-A120T5
A Coreless Differential Current Sensor Based on Hall Technology

Key features Simplified layout, reduced design risk

Stray field robust due Integrated EEPROM to Overcurrent Outputs

FP100R12W3T7_B11 to differential customize device with super fast
IGBT Module measurement response time of 1 µs

TLI4971
Current Sensor I Analog Output
with 240 kHz
Bandwidth for fast
1ED3240MC12H response time
Gate Driver

IMBF170R1K0M1
1.7kV CoolSiC MOSFET Temperature & stress compensation Reference voltage to
to enable accurate current support different output
measurement modes
2024-11-19 public Copyright © Infineon Technologies AG 2024. All rights reserved. 8
Infineon's EiceDRIVER slew rate control gate driver solution
optimizes EMI and power losses

Key features EiceDRIVER 1ED3240MC12H

‒ Single channel isolated gate driver enabling easy design-in

FP100R12W3T7_B11
IGBT Module ‒ 8-pin DSO 300 mil wide body package with large creepage distance (>8mm)
‒ Two-level slew rate control (2L-SRC) feature

TLI4971 ‒ Standard output with 10 A driving capability and 40 V output supply voltage
Current Sensor range
‒ For IGBT, MOSFET, SiC MOSFET, modules and discrete switches up to 2300 V

1ED3240MC12H ‒ Fulfilling highest isolation standards (reinforced isolation)

Gate Driver ‒ UL1577 and IEC60747-17/VDE 0884-11

IMBF170R1K0M1
1.7kV CoolSiC MOSFET

2024-11-19 public Copyright © Infineon Technologies AG 2024. All rights reserved. 9

Infineon's EiceDRIVER slew rate control gate driver solution
optimizes EMI and power losses

Key features EiceDRIVER 1ED32xxMC12H

FP100R12W3T7_B11
IGBT Module

TLI4971
Current Sensor ‒ Single channel isolated gate driver with 5 / 9 / 10 / 18 A
‒ Two-level slew rate control (2L-SRC)
1ED32xxMC12H ‒ On-the-fly PWM cycle-by-cycle gate resistor change
Gate Driver
‒ 100 ns propagation delay with 30 ns integrated input filter
‒ Standard output configuration and Active Miller clamp option
IMBF170R1K0M1
1.7kV CoolSiC MOSFET ‒ UL 1577 & IEC60747-17/VDE 0884-11 (reinforced isolation)
‒ For IGBT, MOSFET, SiC MOSFET, modules and discrete switches up to 2300 V

2024-11-19 public Copyright © Infineon Technologies AG 2024. All rights reserved. 10

Infineon's CoolSiC MOSFET 1700 V high Rds(on) is optimized
for auxiliary power supply

Key features Simplify your auxiliary power supply design

‒ Infineon's CoolSiC MOSFET 1700 V, is the only SiC MOSFET that

FP100R12W3T7_B11
IGBT Module
could be directly driven by most of fly-back controllers.
‒ Enhanced creepage and clearance distance (on board: >7 mm)
ensure the device meets the high voltage standards
TLI4971 with minimum design efforts.
Current Sensor
‒ Recommended gate voltage: D
0 / 12~15 V
1ED3240MC12H
Gate Driver

G
IMBF170R1K0M1
1.7kV CoolSiC MOSFET S
Sense
pin

2024-11-19 public Copyright © Infineon Technologies AG 2024. All rights reserved. 11

Table of contents
1 22 kW GPD reference design 2

1 22 kW GPD reference design 2

2 Deep Dive - 2 Level slew rate control 12

2 Deep Dive - 2 Level slew rate control 12

3 Deep Dive - 1700 V CoolSiC auxiliary supply 26

3 Deep Dive - 1700 V CoolSiC auxiliary supply 26

4 Motor integrated servo drive reference design 30

4 Motor integrated servo drive reference design 30

5 Outlook at SiC Gen2 38

5 Outlook at SiC Gen2 38

6 Top side cooled products 42

6 Top side cooled products 42

2024-11-19 public Copyright © Infineon Technologies AG 2024. All rights reserved. 12

Design trade-offs for dimensioning the gate resistor
RG Design margins,
Turn off at high load
EMI performance,
Turn-on at low load

RG value
dimensioning

Switching speed Switching losses

Turn off at low load Turn on at high load
ILOAD
The Rg value fixes a relationship between all three design aspects and can optimize only one of them.

2024-11-19 public Copyright © Infineon Technologies AG 2024. All rights reserved. 13

Design trade-offs for dimensioning the gate resistor
RG Design margins,
Turn off at high load
EMI performance,
RG-off,1
Turn-on at low load RG-on,1 high load
low load Slew-rate control
overcomes
RG value the
conventional
dimensioningthinking
of gate drive
RG-off,2 RG-on,2
low load high load
Switching speed Switching losses
Turn off at low load Turn on at high load
ILOAD
The Rg value fixes a relationship between all three design aspects and can optimize only one of them.
Slew-rate control breaks off this dilemma of Rg dimensioning towards two of those or even three.
2024-11-19 public Copyright © Infineon Technologies AG 2024. All rights reserved. 14
Two-level slew-rate control vs. conventional gate drive

Conventional Two-level slew-rate control

‒ 1 gate resistor for turn-on ‒ 2 gate resistors for turn-on (selected by /INF)
‒ 1 gate resistor for turn-off ‒ 2 gate resistors for turn-off (selected by /INF)
‒ 1 PWM input signal ‒ 1 PWM input signal
‒ 1 input signal for speed selection (/INF)
‒ Fixed conditions for all operating conditions ‒ /INF to be selected upon operating conditions
‒ The before-mentioned tradeoffs are a burden ‒ E.g. temperature
‒ E.g. collector / drain current and others
‒ Gate resistors operated in parallel depending on
status of /INF
+5V VCC1 VCC2
+15V
VCC1 VCC2 iOUT+1 ig 100n 1µ
PWM
IN+ OUT+ /INF /INF
OUT
IC1

IN- OUT- IN IN OUTF

GND1 GND2 iOUT-1 SGND GND1 VEE2

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A review of switching speed behavior over transistor current

Turn-on / On-state Turn-off / Off-state

‒ Good speed at low load ‒ Good speed at high load
‒ Low speed at high load (slow turn-on) ‒ Low speed at low load (slow turn-off)
The two-level slew-rate control concept combines all 4 ranges of the
two diagrams. It can control the gate resistance for specific aims.

OFF: OFF:
fast slow
ON: ON:
slow fast
dvCE/dt dvCE/dt
IC IC
‒ Speed up at high load -> turn-on fast ‒ Speed up at low load -> turn-off fast
2024-11-19 public Copyright © Infineon Technologies AG 2024. All rights reserved. 16
Activation of fast and slow mode (activating OUT and OUTF) in
drives applications

iMot
Staying inside the changeover current limit +Ilim
window leads to continuous slow turn-on
and continuous fast turn-off

If the motor current is above the -Ilim

changeover current limit, fast and slow
modes are activated according to the
instantaneous motor current value iMot.
slow
Turn
‒ The special control mode of 2L-SRC needs on
slow fast slow fast slow

only a few states OUT OUT + OUTF OUT OUT + OUTF OUT
fast
Turn
fast slow fast slow fast
off
OUT + OUT OUT + OUT OUT +
OUTF OUTF OUTF

2024-11-19 public Copyright © Infineon Technologies AG 2024. All rights reserved. 17

Controlling /INF

iMot
Low motor currents inside the |Ilim| limit +Ilim
window leads to continuous slow turn-on
and continuous fast turn-off.

Toggling of signal /INF controls the change -Ilim

between slow mode and fast mode at turn-
on and turn-off depending on the
instantaneous motor current value. /INF

‒ /INF has to toggle only a few times during

a motor period causing only little control effort ! IN

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Proposal for Rg dimensioning with target dV/dt < 5 V/ns
in drives applications (1/3)

‒ Gate resistance (Rg) selection

procedure:
‒ Do a characterization of the switch
with different gate resistors, from low
load current (e.g. 1/10 of rated
current) up to e.g. peak rated drive
current
‒ Plot dV/dt for the different resistors
over the load current

2024-11-19 public Copyright © Infineon Technologies AG 2024. All rights reserved. 19

Proposal for Rg dimensioning with target dV/dt < 5 V/ns
in drives applications (2/3)

‒ Gate resistance (Rg) selection

procedure: 2R2
‒ Find the resistor value which gives
5V/ns at the low load current → that
will be Rbig
‒ Choose a changeover current 24R
‒ Find the resistor value which gives
5V/ns at the changeover current →
that will be Rsmall

2024-11-19 public Copyright © Infineon Technologies AG 2024. All rights reserved. 20

Proposal for Rg dimensioning with target dV/dt < 5 V/ns
in drives applications (3/3)

‒ Gate resistance (Rg) selection

procedure: 2R2
‒ Find the resistor value which gives
5V/ns at the low load current → that
will be Rbig
‒ Choose a changeover current 24R
‒ Find the resistor value which gives
5V/ns at the changeover current →
that will be Rsmall
‒ The behavior of the 2L-SRC will be a
combination of the two resistor plots

2024-11-19 public Copyright © Infineon Technologies AG 2024. All rights reserved. 21

Measurements results with the 22 kW GPD

iMot
+Ilim
35A

-Ilim

/INF

IN

Example of a turn-on dv/dt diagram

2024-11-19 public Copyright © Infineon Technologies AG 2024. All rights reserved. 22

Measurements results with the 22 kW GPD

Y: 100 V/div
X: 500 ns/div

Y: 20 events/div
X: 0.5 V/ns/div All switching events are slower than 4.5 V/ns

1 V/ns 4.5 V/ns

Example of a set of turn-off waveforms (top) and histographical analysis
2024-11-19 public Copyright © Infineon Technologies AG 2024. All rights reserved. 23
Operation measurements results with the 22 kW GPD

‒ Mode 1: slow turn-on, fast turn-off

‒ Mode 2: fast turn-on, slow turn-off
‒ 2L-SRC-mode with
• IC < 35 A: slow turn-on, fast turn-off
• IC > 35 A: fast turn-on, slow turn-off

2L-SRC Mode is identical to Mode 1 high V/ns events are avoid

Mode 2 faster than 5 V/ns

2024-11-19 public Copyright © Infineon Technologies AG 2024. All rights reserved. 24

Operation measurements results with the 22 kW GPD

The 2L-SRC reduce the IGBT temperature more

than 12 °C and the diode temperature 7 °C

‒ Lower losses Potential for EMI reduction

‒ Lower temperature and temperature ripple
without any output power
‒ Longer life time / higher power density
limitation
2024-11-19 public Copyright © Infineon Technologies AG 2024. All rights reserved. 25
Table of contents
1 22 kW GPD reference design 2

1 22 kW GPD reference design 2

2 Deep Dive - 2 Level slew rate control 12

2 Deep Dive - 2 Level slew rate control 12

3 Deep Dive - 1700 V CoolSiC auxiliary supply 26

3 Deep Dive - 1700 V CoolSiC auxiliary supply 26

4 Motor integrated servo drive reference design 30

4 Motor integrated servo drive reference design 30

5 Outlook at SiC Gen2 38

5 Outlook at SiC Gen2 38

6 Top side cooled products 42

6 Top side cooled products 42

2024-11-19 public Copyright © Infineon Technologies AG 2024. All rights reserved. 26

Infineon’s CoolSiCTM MOSFET 1700V high Rds(on) is optimized for
auxiliary power supply

Key features Why 1.7kV CoolSiCTM MOSFET?

Simple fly-back topology

FP100R12W3T7_B11
IGBT Module

TLI4971
Current Sensor

1ED3240MC12H
Gate Driver

IMBF170R1K0M1 ‒ Greatly reduce the part counts

1.7kV CoolSiC MOSFET
‒ Higher voltage margin & lower
device → Increase the reliability
27
Flyback converter for auxiliary power supply

Power supply for µC & logic, gate driver, encoder, IO, fan
‒ High DC – link voltage up to 850 V (regenerative braking)
‒ Efficient (Standby losses)
‒ Fast switching enables small and cheaper magnetics
‒ Creepage and clearance and electrical insolation to SELV
circuits acc. 61800-5-1:2022 Table 3 →(enhanced
protection)

LINKS
D
‒ Flyback PWM Controller
‒ 1700 V CoolSiCTM MOSFET
‒ REF_62W_FLY_1700V_SIC
G
Sense
pin S

Flyback Controller CoolSiCTM

ICE2QS03G IMBF170R1K0M1
2024-11-19 public Copyright © Infineon Technologies AG 2024. All rights reserved. 28
Flyback converter for auxiliary power supply

𝑛 = 10.17−1
output current stops 800 𝑉
“Zero voltage switching” 𝑉𝑜
24 𝑉
𝑈𝑑𝑐 𝑛

VDS
𝑉𝑜𝑢𝑡
𝑈𝐷𝑆 = 𝑈𝑑𝑐 +
𝑛

Test:
VGS
𝑉𝑜𝑢𝑡
𝑈𝐷𝑆 = 𝑈𝑑𝑐 +
𝑛 = 800𝑉 + 24𝑉 ∙ 10.17 = 1044𝑉
Drain source and gate voltage at rated output load and 800 VDC at 125 kHz

High blocking voltage and low switching losses → 1700 kV CoolSiCTM

2024-11-19 public Copyright © Infineon Technologies AG 2024. All rights reserved. 29

Table of contents
1 22 kW GPD reference design 2

1 22 kW GPD reference design 2

2 Deep Dive - 2 Level slew rate control 12

2 Deep Dive - 2 Level slew rate control 12

3 Deep Dive - 1700 V CoolSiC auxiliary supply 26

3 Deep Dive - 1700 V CoolSiC auxiliary supply 26

4 Motor integrated servo drive reference design 30

4 Motor integrated servo drive reference design 30

5 Outlook at SiC Gen2 38

5 Outlook at SiC Gen2 38

6 Top side cooled products 42

6 Top side cooled products 42

2024-11-19 public Copyright © Infineon Technologies AG 2024. All rights reserved. 30

Typical use of Servo Drives

Industrial Robots Industrial control system Machine tools

‒ Motion Control features

‒ High pulse torque
‒ Frequent acceleration and deceleration Decentralization
‒ High speed motion
‒ Less space in cabinet and production machine
‒ Cabinet less machine end customer solution

2024-11-19 public Copyright © Infineon Technologies AG 2024. All rights reserved. 31

Integration of the drive into the motor

Benefits
Reducing cabinet space or makes
cabinet less design possible
Common DC bus enables energy
recovering

Solution: Inverter
integrated in motor Minimum loss generation with
CoolSiCTM MOSFETS

Extra compact
servo inverters

2024-11-19 public Copyright © Infineon Technologies AG 2024. All rights reserved. 32

Typical load profile for a servo drive

Typical load profile for a servo drive

‒ High torque (current) in acceleration and breaking period
‒ Low torque (current) in constant speed period
‒ >90% time in low torque operation
‒ Load variation in second range

Acceleration
Speed and torque

Speed

Constant Torque
speed

time
Linear axis

Braking

2024-11-19 public Copyright © Infineon Technologies AG 2024. All rights reserved. 33

CoolSiC MOSFET Enables
Conduction Loss Reduction in all Operation Modes

Output characteristic comparison

CoolSiC MOSFET 1200V 45mΩ vs. IGBT1200V 40A @ 25°C & 175°C
forward
Load current [A] 25
reverse
25 ‒ Green: CoolSiC MOSFET

Load current [A]

acceleration breaking
20 20 45mohm
15
‒
15
Grey : IGBT H3 40A
10 10
IMW120R045M1, 25°C
IMW120R045M1, 175°C ‒ Solid line: 25°C
5 constant speed 5 IKW40N120H3, 25°C

‒
IKW40N120H3, 175°C

0 0
Dash line: 175°C
0 0,5 1 1,5 2 0 0,5 1 1,5 2
Device voltage drop [V] Device voltage drop [V]

Conduction loss comparison

Constant speed Acceleration Breaking mode:
mode: mode:
7% ~ 40%
65% ~ 83% 8% ~ 47% reduction
reduction reduction
At all operation conditions, and
junction temperatures, the
CoolSiC MOSFET reduces
the conduction loss up to 80%.
CoolSiC IGBT CoolSiC IGBT CoolSiC IGBT
MOSFET MOSFET MOSFET

2024-11-19 public Copyright © Infineon Technologies AG 2024. All rights reserved. 34

1200 V CoolSiC MOSFET Enables Switching Loss Reduction in
all Operation Modes

‒ Low Qrr and No tail current

I(t) IGBT

MOSFET

Switching loss comparison versus dV/dt:

t Total switching loss at 150°C, acceleration and breaking (20A)

At the same dV/dt w/o dV/dt limitation

6

Etot [mJ]
‒ Temperature independent switching 4
50% ~ 60% reduction up to 90% reduction
losses IKW40N120H3
2
IMW120R045M1

IGBT at high T 0
I(t) 5V/ns 10V/ns unlimited
Total switching loss at 25°C, constant speed operation (5A)
At the same dV/dt
0,6
20% ~ 35% reduction w/o dV/dt limitation

Etot [mJ]
up to 60% reduction
0,4
MOSFET
0,2
t 0
5V/ns 10V/ns unlimited

2024-11-19 public Copyright © Infineon Technologies AG 2024. All rights reserved. 35

1200 V CoolSiC MOSFET Enables New Degree of Design
Flexibility by 45%~50% Total Loss Reduction
Loss reduction in Loss reduction in
acceleration & breaking modes constant speed mode

Total loss Total loss

switching ≈45% reduction switching ≈50% reduction

conduction conduction

IGBT CoolSiC MOSFET IGBT CoolSiC MOSFET

Higher pulse current Inverter motor

Compact inverter Passive cooling
capability integration

CoolSiC
IGBT MOSFET

Same frame
with higher current
or no heatsink No cooling fan

2024-11-19 public Copyright © Infineon Technologies AG 2024. All rights reserved. 36

 Upcoming DR3KIMBGSIC2MA

‒ CoolSiC MOSFETs in a 1200 V CoolSiC MOSFET G2 ‒DC input

IMBG120R040M2H ‒3 phase AC output
D2PAK package
‒ Input voltage 350 – 700 VDC
‒ One gate driver board and one ‒ Output voltage 220 VAC, 380
EiceDRIVER gate driver VAC, 480 VAC
power board ‒ POUT 4 kW
1ED3122MC12H
https://www.infineon.com/cms/en/product/ev
aluation-boards/ref-dr3kimbgsicma/
2024-11-19 public Copyright © Infineon Technologies AG 2024. All rights reserved. 37
Table of contents
1 22 kW GPD reference design 2

1 22 kW GPD reference design 2

2 Deep Dive - 2 Level slew rate control 12

2 Deep Dive - 2 Level slew rate control 12

3 Deep Dive - 1700 V CoolSiC auxiliary supply 26

3 Deep Dive - 1700 V CoolSiC auxiliary supply 26

4 Motor integrated servo drive reference design 30

4 Motor integrated servo drive reference design 30

5 Outlook at SiC Gen2 38

5 Outlook at SiC Gen2 38

6 Top side cooled products 42

6 Top side cooled products 42

2024-11-19 public Copyright © Infineon Technologies AG 2024. All rights reserved. 38

Product Introduction
1200 V CoolSiC MOSFET G2 portfolio with .XT in D2PAK-7
Generation 2 features Portfolio

Better energy efficiency

D2PAK-7 Potential
• Improved price-performance Gen 2 RDS(on)
(TO-263-7) application
• Power loss reduction [m]
Generation 2 power
• Energy savings for every Watt installed in the field

Higher power density Best in class 8 IMBG120R008M2H 50kW+

• Lowest RDS(on) for highest output capability RDSon 12 IMBG120R012M2H
• Most granular portfolio in the market 17 IMBG120R017M2H
• .XT interconnection technology advancements as basis
for power density and thermal performance 22 IMBG120R022M2H
26 IMBG120R026M2H
40 IMBG120R040M2H
Robustness features 53 IMBG120R053M2H
• Short-circuit rating, 2 µs 78 IMBG120R078M2H
• Avalanche robustness 116 IMBG120R116M2H
• Overload operation up to Tvj = 200°C
• RDSon,max value guaranteed at high temperature, allows
181 IMBG120R181M2H
for designing for overload conditions without unnecessary 234 IMBG120R234M2H ~100W
margins

Applications

2024-11-19 public Copyright © Infineon Technologies AG 2024. All rights reserved. 39

CoolSiC 650V G2 MOSFETs are the next evolutionary step in
performance and reliability
Product in development stage - Portfolio and timelines subject to change

Target Target RDson

Features and value proposition Package Product name Availability
appl. @xV
IMZA65R050M2H 50 Q1 2024
‒ Best in class for GOX robustness
IMZA65R040M2H 40 Q1 2024
‒ Full driving voltage flexibility (range -7V → 23V) TO-247-4
and TO-247- IMZA65R020M2H 20 Q1 2024
3
‒ Improved figures of merit (25%-40%) and lowest switching losses IMZA65R015M2H 15 Q1 2024

‒ Ease of use due to high immunity against parasitic turn on enabling unipolar IMZA65R007M2H 7 Q1 2024
gate driving IMBG65R050M2H 50 Q1 2024

IMBG65R040M2H 40 Q1 2024

‒ Enables BOM savings and maximizes the performance per $ D2PAK IMBG65R020M2H 20 Q1 2024

IMBG65R015M2H 15 Q1 2024
‒ Highest reliability
IMBG65R007M2H 7 Q1 2024
‒ Ease of use and full compatibility with existing vendors
IMLT65R060M2H 60 Q3 2024
‒ Suitable for fan-less and heatsink-less designs as well as harsh environments IMLT65R050M2H 50 Q3 2024
TOLT
IMLT65R040M2H 40 Q3 2024
TSC
IMLT65R020M2H 20 Q3 2024
Ron x Qg Ron x Qoss IMLT65R015M2H 15 Q3 2024

IMTA65R060M2H 60 Q3 2024
Competitor
ThinTOLL IMTA65R050M2H 50 Q3 2024
8x8 IMTA65R040M2H 40 Q3 2024
-26% -40%
CoolSiC G2 IMTA65R020M2H 20 Q3 2024

ES available for most wave 1 products

Wave 1 Wave 2

2024-11-19 public Copyright © Infineon Technologies AG 2024. All rights reserved. 40

1200 V CoolSiC MOSFET G2 near-term roll-out

CoolSiC G1 CoolSiC G2 wave 1 CoolSiC G2 coming soon in 2024-2025

TSC TSC
1200V

QDPAK Half-
TO-247-4 TO-247-3 D2PAK-7 D2PAK-7 TO-247-4 bridge QDPAK
10 products 10 products 7 products 11 products 9 products 4 products 9 products
7mΩ - 350 mΩ 7mΩ - 350 mΩ 30 mΩ - 350 mΩ 8 mΩ - 234 mΩ 7 mΩ - 79 mΩ 12 mΩ - 53 mΩ 4 mΩ - 53 mΩ

...and more to come!

TSC= Top Side Cooling

2024-11-19 public Copyright © Infineon Technologies AG 2024. All rights reserved. 41

Table of contents
1 22 kW GPD reference design 2

1 22 kW GPD reference design 2

2 Deep Dive - 2 Level slew rate control 12

2 Deep Dive - 2 Level slew rate control 12

3 Deep Dive - 1700 V CoolSiC auxiliary supply 26

3 Deep Dive - 1700 V CoolSiC auxiliary supply 26

4 Motor integrated servo drive reference design 30

4 Motor integrated servo drive reference design 30

5 Outlook at SiC Gen2 38

5 Outlook at SiC Gen2 38

6 Top side cooled products 42

6 Top side cooled products 42

2024-11-19 public Copyright © Infineon Technologies AG 2024. All rights reserved. 42

Package Evolution which enables high volume assembly and PCB
design improvement at expensive assembly location

THD – Through Hole Device SMD Bottom Side Cooling SMD Top Side Cooling

‒ Robust thermal performance ‒ Medium thermal performance ‒ Optimal thermal performance

‒ Manual handling ‒ Fully automatic handling ‒ Fully automatic handling
‒ Low pin count ‒ High pin count ‒ High pin count

2024-11-19 public Copyright © Infineon Technologies AG 2024. All rights reserved. 43

The QDPAK package is part of a scalable, future proof package
concept to address various applications and customer needs

Power
Dissipation

Hexa-DPAK

QDPAK QDPAK
Half Bridge

DDPAK
TOLT

Voltage

2024-11-19 public Copyright © Infineon Technologies AG 2024. All rights reserved. 44

Questions &
answers

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