Tutorial - Answers| Prof V Pickert

NEWCASTLE UNIVERSITY

_______________________

Tutorial, 2023/2024
_________________________
ANSWERS

Power Electronics
Design & Applications
(EEE3025)

Prof Volker Pickert

It is desirable to show the method of calculation and the steps taken to achieve the results.

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1
a)

Drain

Power MOSFET Gate

Source

Collector

IGBT Gate

Emitter

Anode

GTO
Gate
Cathod
e

b) LED stands for light emitting diodes. The diode requires a constant dc voltage supply
to work efficiently. LED light therefore need to convert the AC supply voltage into a dc
voltage. Incandescent light bulbs do not require this conversion. Light is emitting by
heating up the internal filament. One can therefore make a simple analogy by compare
incandescent light bulbs with resistors. Resistors can be heated using the existing AC grid
voltage.

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c) 1) MOSFET
2) GTO
3) Tyristor

Vload D
d) = .
Vdc 1 − D

e) PN PIN
i 1
e  Schottky
R 1

R

VBr VBr VBr e

v

PIN PN
Schottky

f) Brake chopper

g) step-up converter
step-down converter
step-up/stepdown converter

h) A power electronic converter controls and changes fixed input values of given electrical
quantities into load specefic values with the help of switching arrangement.
The electrical quantities are: magnitude of voltage or current, frequency of voltage or
current, number of input and output phases and phase delays.

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2
a)

i) P = V  I1  cos

200V 40 A
= . . cos10 = 400W
2. 2.
Q1 = V  I1  sin 
200V 40 A
= . .sin 10 = 70.4VA
2. 2.

ii) S = P2 + Q2

Q = Q1 + D 2
2

D = V I2 + I3
2 2

2 2
200V  40   40 
D= −  + 
2  2  2   2  3 
D = 243.5VA

Q = (70.4VA) 2 + (243.5VA) 2 = 253.5VA

S = (400W ) 2 + (253.5VA) 2
S = 473.6VA

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b)

40A
ah bh 2

40A
2.3

h h
0 3 0
1 2 1 2 3

40A
−
2 .2

c)

I 2 − I1
2

%THDi = .100%
I1

I = I1 + I 2 + I 3
2 2 2

2 2 2
 40 A   40 A   40 A 
=   + −  + 
 2.   2.2   2.3 

40 A 1 1
= 1+ +
 2 4 9

40 A 36 9 + 4
= +
 2 36 36

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40 A 49 40 A 7
= = .
2 36 2 6
2 2
 40 A 7   40 A 
 .  + 
 2 6   2 
2
7
%THDi = .100% =   − 1.100% = 60%
40 A 6
2

V 2 − V1
2

%THDV = .100%
V1
here is V =V1
 %THDV = 0%
That is because a pure sinusoidal waveform (A sin(ωt)) represents the first harmonic. There
are no other harmonics. Therefore there are no distortions.

d)

i) P = V .I1.cos

200V 40 A
= . . cos( −10 ) = 400W
2. 2.
Q1 = V .I1.sin 
200V 40 A
= . .sin( −10 ) = −70.4VA
2. 2.

ii) same as in a) ii)

S = 473.6VA

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e)
In general:
If current is leading the voltage that means the load acts as a capacitor. The reactance is
therefore negative.
If current is lagging the voltage that means the load acts as an inductor. The reactance is
therefore positive.

Explanation
The reactive power Q can be expressed as

Q = V .I1.sin  = S 2 − P 2 (1)
An inductive load has a positive value of the angle α, where the current lags the voltage.
In accordance with equation (1), an inductive load draws positive reactive power.
Conversely, a capacitive load draws negative reactive power. At negative reactive power
the current leads the voltage (α < 0)

Voltage Current

Q>0

ωt
α > 0 inductive

Current Voltage

Q<0

ωt
α < 0 capacitive

In question 2a) α is “+100” -> inductive and in question 2d) α is “-100” -> capacitive.
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a) Vd = 1.35Vll . cos 

b) imax = I d ; imin = 0
c) imax = I d ; imin = − I d

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4
a) Pon-state = VCE*IC = 2.2V(from left top graph)*400A = 880W

b) Pturn-on= Eturn-on*f= 38mJ(from right top graph)*10kHz= 380W

Pturn-off= Eturn-off*f= 49mJ(from right top graph)*10kHz= 490W

c) tr=tf=80ns (from left bottom graph)

d) RG=8 (from right bottom graph)

e) Ex must be connected with the driver circuit and is called Kelvin connector.
Connecting the gate drive circuit with the Kelvin connector reduces the inductive
parasitics that are associated with the power module structure. Reduction in
inductive parasitics allows faster turn on and turn off speeds of the device.

f) i) false, the maximum voltage the device can survive is 1200V. Connecting the
device to a 1200V bus bar will destroy the device during turn-off conditions
because of the additional voltage generated by the parasitic inductance between
the dc bus bar and the IGBT chip. Rule of thumb: The voltage of the dc bus bar
should be half the maximum module voltage

ii) false, at 80oC the maximum current is 500A. 700A can be achieved in the case
the temperature is 25 oC.

iii) false, the maximum gate-source voltage is +20V to turn the device on and -
20V to turn the device off.

iv) correct, the diode can even be operated for 1ms at 1000A

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5
a) 125oC
b)
Tj − Th = P( Rth( j −c ) + Rth( c−h ) )

Th = T j − P( Rth( j −c ) + Rth( c −h ) ) = T j − ( Pturn−on + Ptrun−off + Pcond )( Rth( j −c ) + Rth( c −h ) )


C
= 125 C − (20W + 25W + 45W )  (0.6 + 0.2)

= 53 C
W
c)

Tjunction Tcase Theatsink

Tambient
P Zth(j-c) Zth(c-h) Zth(h-a)

d)
Pavg = fs*(Pturn-on/fs+Pturn-off/fs+Econd)
Pavg = (20W+25W+9mWs*5kHz)=90W
Tc = Tj -(Rth(j-c))*Pavg=125oC-(0.6 oC/W)*90W=71oC

e)
Ppulse = (Pturn-on/fs+Pturn-off/fs+Econd)/ton
Ppulse = (20W/5kHz+25W/5kHz+9mWs)/66us= 272W
Zth(j-c) = (Tjmax – Tc )/ Ppulse = (125oC-71oC)/270W=0.2oC/W

f)
Zth(j-c)=D* Rth(j-c)
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D=0.2/0.6=33%
g)

PA
Zth(h-a)
Zth(j-cA)

PB
Zth(c-h)
Zth(j-cB)

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2Vd 2Vd
Maximum current level: ; Maximum current level: −
3R 3R
Vd V
Other current lever: ;− d
3R 3R
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Vload 5
a) D= = = 41.67%
Vdc 12

b) Switching period can be expressed to

1
T= = t S on + t S off
f
When S is on, the voltage across L is:
diL I I
V = L. = L. L = L. L = Vdc − Vload
dt t t S on
Note IL is positive as the current is rising

I L .L
 t S on =
Vdc − Vload
When S is off, the voltage across L is:
𝒅𝒊𝑳
𝑽 = 𝑳.
𝒅𝒕
−𝜟𝑰𝑳 −𝜟𝑰𝑳
𝑳. = 𝑳. = −𝑽𝒍𝒐𝒂𝒅
𝜟𝒕 𝒕𝑺 𝒐𝒇𝒇

Note IL is negative as the current is falling

I L .L
 t S off =
Vload
1 I L .L I .L I L .L.Vdc
T= = + L =
f Vdc − Vload Vload Vload (Vdc − Vload )
1 Vload (Vdc − Vload )
L= .
f I L .Vdc
c)

1 Vload (Vdc − Vload )

L= .
f I L .Vdc
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1 5V (12V − 5V )
= . = 182.29 H
20kHz 0.8 A.12V

d)
1 T I C
Q= .
2 2 2
square area
triangle area
Q 1 1 T I C
VC = = .
C C 22 2
1 T I C
= . .I C =
C 8 C.8. f
I C 1 I L 1
C = . = .
VC 8 f VC 8 f
0.8 A 1
C = . = 250F
20mV 8.20kHz

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8
a)
 IL
 t 0  t  
i(t ) =  
IL
 2I L − t   t  2
 
b)
2
1 1
2
a0 =
2  f (t ).d (t )
0

 2
1  IL I 
=  .t .d (t ) +  (2 I L − L .t ).d (t )
2  0    
2
1  IL 2  2 IL 
=  .(t ) + 2 I (t ) − (t ) 2

2  2

2
L
 
0

1  IL IL 
=  2 .( 2
− 0) + 2 I ( 2 −  ) − (4 2 −  2 )
2 2
L
 
𝟏 𝑰 .𝝅 𝟑𝑰𝑳 .𝝅
= 𝟐𝝅 [ 𝑳𝟐 + 𝟐𝑰𝑳 𝝅 − ]
𝟐

=
1
I L .  = I L
2 2
or

iL

IL

ωt
π 2π 3π

Area is half size of the area

of IL.2π ➔ IL/2

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c) The waveform is even f (t ) = f (−t )

d) Even waveform  bh = 0

2
ah =
  f (t ).cos(ht ).d (t )
0


2 IL
ah =
   (t ). cos(ht ).d (t )
0


2I L
=
2  t.cos(ht ).d (t )
0

Using
𝑐𝑜𝑠(𝑎𝑥) 𝑥𝑠𝑖𝑛(𝑎𝑥)
∫ 𝑥 𝑐𝑜𝑠( 𝑎𝑥)𝑑𝑥 = 𝑎2
+ 𝑎

2 I  cos( ht ) t.sin( ht ) 
ah = 2L  + 
  h2 h 0

 + 1 h = even 
 
2 I L  − 1 h = odd 1
ah = 2 + 0 − 2 − 0
  h2 h 
 
 
2I L  1 1
2  2
− 2=0 for h =even
 h h 
ah =
2I L  1 1 4I
2 
− 2 − 2  = − 2 L2 for h =odd
  h h   .h

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9
a)
a1) Power Diode
a2) Power Diode, Thyristor, GTO
a3) GTO
a4) Thyristor
a5) Thyristor, GTO
a6) Power Diode
a7) GTO
a8) BJT

b)
i) Characteristic A is for Thyristor.
ii) Characteristic is for GTO.
GTOs and Thyristors have the same cross-sectional four-layer structure. However, the gate
of GTOs are digitalized by using “pillars” whereas gates in Thyrsitors are solid without
embedding groves or any other disturbances in the silicon structure.

c)

Anode Anode

Gate Cathod Gate Cathod

e e

Thyristor GTO

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10
a)
for example:
– power devices
– capacitors
– gate drive circuits
– filters
b)
A) Driving losses
B) off-state losses
C) Turn-off losses

c)
Vout
= D , Vout = D.Vin , D = 0
Vin
Vout = 0
d)

L D

Vdc Vin S C Vout Rload

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Collector
e)
Power BJT Base

Emitter

Drain

Power MOSFET Gate

Source

Anode
GTO

Gate Cathod
e

f)

1
1- PIN Diode i 1 2

2- Power Schottky Diode R 1

R

e
v

1 2

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g)
Rapid changes in voltage and current levels in a power switching device cause
electromagnetic interference with other equipment as well as with its own. To prevent EMI
transmission various techniques can be used like: metal cabinet for housing, input and
output filters, optimised design layout and reduction in switching speed of power devices.

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11
a)b)c)

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d)

Vavg = Vd = 1.35.VLL . cos 

= 1.35.VLL . cos 60

= 0.675.VLL = 0.675. 3V ph
= 1.17V ph

360
1
I rms =  iT (t ).dt
2

360 0

120
1
= I .dt
2

360
d
0

120 I
= Id . = d
2

360 3

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12
a)

PBat = I load .VBat = 20 A.42V = 840W

All components are ideal

Pdc = I S .Vdc = PBat

PBat 840W
IS = = = 5.8 A
Vdc 144V

b)

Kirchhoff’s current law

I load = I S + I D

I D = I load − I S = 20 A − 5.8 A = 14.2 A

c)

VBat 42V
=D= = 0.29
Vdc 144V

t on
D= = t on . f
T
D 0.29
ton = = = 14.5s
f 20kHz

1 1
toff = T − ton = − ton = − 14.5s = 35.5s
f 20kHz

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d)

during Soff VL= VBat

di
VL = L.
dt

dt t t off
L = VL . = VL . = V L .
di i i
toff 35.5s
= VL . = 42V . = 746H
i 2A
e) iS(A)
21
19

t(µs)
14.5 50 64.5 100

iD(A)
21
19

t(µs)
14.5 50 64.5 100

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13
a)

VS

Vmax

 3
ωt
 2
4 4
-Vmax
VR

Vmax

ωt

VT

ωt

-Vmax
b)


1
2 
Vavg = V max sin( t ).dt

=
1
2
 
.Vmax − cos(t )  
=
Vmax
− cos( ) + cos( )
2

=
Vmax
1 + cos( )
2
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c)


1 Vmax sin 2 (t )
2

2 
Pavg =  dt
R

2 
V
= max  sin (t )dt
2

2R

2 
V 1 1 
= max  (t ) − sin( 2t )
2 .R  2 4 

V 2 max  1 1 1 
=  − 0 −  + sin( 2 )
2 .R  2 2 4 

 
2
V 1
= max  −  + sin( 2 )
4 .R  2 
d)

from c)

 
2
V 1
Pavg = max  −  + sin( 2 )
4 .R  2 

( 2 .230V ) 2  1 
500W =  −  + sin( 2 ) 
4 .50 2

1
2.97 =  −  + sin( 2 )
2

1
− 0.17 = − + sin( 2 )
2
This is a transcendental equation and requires a numerical solution

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α Value of equation
00 0
450 -0.285
200 -0.027
300 -0.09
400 -0.205
350 -0.191
370 -0.165 ≈ -0.17

For example apply Newton iteration.

Simplified Method (hand tool): To start with choose one α that is below the final solution
(-0.17) and choose one α that produces a bigger value than the solution. Here (0o) and
(45o). Now use approx. the half of the difference between both angles (20o). Now
depending on the difference between the solution and the final solution start to choose
angles that approach the final solution by varying the steps of the angle. Once you are
within the given error stop the process. This will give you a good estimate for α.
Therefore α =370

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14
i)

t
V (t ) = 5V
2

ii)
2
1 1
2
a0 =
2  f (t ).d (t )
0

2
1 1
2 0
a0 = V (t ).d (t )
2

2
1 t
=
2  5V 2 .d (t )
0

2
5V
4 2 0
= t.d (t )

5V 1 2
= . (t ) 2
4 2
2 0

5V 1
= .( .4 2 − 0)
4 2
2

= 2.5V

Or make use of “look close”. Between each period (2π) is one triangle that halves a 5V square.
Therefore the average is 2.5V.

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iii)

f (t ) = f (−t ) ==============> no

f (t ) = − f (−t ) ============> no

T
f (t ) = f (t  ) ==========> no
2
T
f (t ) = − f (t  ) =========> no
2
v(t) has no symmetries

iv)
2
1
ah =
  f (t ). cos(ht ).d (t )
0

2
1 t
ah =
  5V
0
2
. cos( ht ).d (t )

2
5V
=
2 2  t. cos(ht ).d (t )
0

Using

 x cos(ax).dx with x = ωt and a=h

2
5V  cos( ht ) t. sin( ht ) 
ah = +
2 2  h 2 h 
0

5V 1 1 
ah =  h 2 + 0 − − 0  = 0
2 2 h2

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2
1
bh =
  f (t ). sin( ht ).d (t )
0

2
1 t
bh =
  5V
0
2
. sin( ht ).d (t )

2
5V
=
2 2  t. sin( ht ).d (t )
0

Using

 x sin( ax).dx with x = ωt and a=h

2
5V  sin( ht ) t. cos( ht ) 
bh = −
2 2  h 2 h 
0

5V  2 
=  0 − − 0 + 0 
2 2 h

5V
bh = −
 .h

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v)

ah

0 0 0 0 0
h
1 2 3 4 5

5V
-bh  5V
2 5V
3 5V
4 1V

h
1 2 3 4 5

vi)

a0 +  ah cos( ht ) + bh sin( ht )
1
It is f (t ) =
2 h =1

ah is 0 therefore:

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5
 5V 
V (t ) = 2.5V +  − sin( ht )
h =1   .h 

vii)


60 =
3

     
V (60 ) = 2.5V +  −
 5V 5V 5V 5V 5V
sin( 1. ) − sin( 2. ) − sin( 3. ) − sin( 4. ) − sin( 5. )
  .1 3  .2 3  .3 3  .4 3  .5 3 
V (60 ) = 2.5V + − 1.38V − 0.69V + 0 + 0.34 + 0.28V 

= 1.05V

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 Tutorial - Answers| Prof V Pickert

15

a)

Switching states:
B1 and B2 ON or OFF
B3 and B4 ON or OFF

b)

Path1: B1 and B2 carry current IL

Switching state B1 and B2

B1
iL L

Vdc Vd R

B2

Path2: D3and D4 carry current IL

Switching state B3 and B4

iL L

Vdc Vd D3 R

D4

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