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Sheet 2 Electronic Devices

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37 views2 pages

Sheet 2 Electronic Devices

Uploaded by

farhafouadd
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Electronic Devices

Sheet #2

1. (a) The resistivities of two sides of a step-graded germanium diode are 2Ω.cm (p
side) and 1Ω.cm (n side). Calculate the value Vo the potential barrier at room
temperature.
(b) Repeat part a for a silicon p-n junction.

2. (a) Sketch the linear plots of carrier concentration vs. distance for an abrupt silicon
junction if ND=1015 atoms/cm3 and NA=1016 atoms/cm3. Give numerical values for
the ordinates. Label the n, p, and depletion region.
(b) Sketch the potential barrier as a function of a function of distance for this case.

3. (a) Consider a step graded germanium p-n junction with ND=103NA, Corresponding
to 1 acceptor atom per 108 germanium atoms. Calculate the contact difference of
potential Vo at room temperature.
(b) Repeat part (a) for a silicon p-n junction.

4. If the reverse saturation current in a p-n junction silicon diode is 1nA, what is the
applied voltage for a forward current of 2.5μA?

5. (a) Calculate the factor by which the reverse saturation current of a germanium
diode is multiplied when the temperature is increased from 25 to 80oC.
(b) Repeat part (a) for silicon diode over the range 25 to 125oC.

6. Reverse biased diodes are frequently employed as electrically controllable variable


capacitors. The junction capacitance of an abrupt junction diode is 20pf at 5V
compute the decrease in capacitance for 1.0V increase in bias, assuming that
potential barrier = 0.65V.

7. (a) A silicon diode at room temperature conducts 1mA at 0.7V. Given that voltage
increase to 0.8V, calculate the diode current. Assume η =2.
(b) Calculate the reverse saturation current.
(c) Repeat (a) for η=1.

8. A silicon diode with shown volt-ampere characteristic used in the following circuit
with VAA=6V and R=100Ω.
(a) Determine the diode current and voltage.
(b) If VAA is decreased to 3V what must the new value of R be if the diode current
is to remain at the value in (a)?
R
+
ID
VAA
VD

9. The circuit shown uses an ideal diode. Find Vo given VBB=9V.

0.6K

+
VBB
0.3K 0.4K Vo

10. For the circuit shown, the cut-in voltage of the diode is 0.6V and the drop across a
conducting diode is 0.7V. Calculate Vo for the following input voltages and indicate
the state of each diode (ON or OFF). Justify your assumptions about the state of each
diode.
1K
(a) V1=0V, V2=0V. V1
(b) V1=5V, V2=0V.
(c) V1=0V, V2=5V. 1K +
(d) V1=5V, V2=5V. V2
9K Vo

11. In the shown circuit, the diode D1 is germanium with offset voltages 0.3V and an
incremental resistance 30 ohms whereas D2 is silicon with offset voltage 0.6V and
incremental resistance 18 ohms. Find the diode current if R=10 k-ohms.

110v D1 D2

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