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Gujarat Technological University

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43 views2 pages

Gujarat Technological University

Uploaded by

bharattimesinfo
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Enrolment No.

/Seat No_______________

GUJARAT TECHNOLOGICAL UNIVERSITY


BE - SEMESTER–I & II (NEW) EXAMINATION – SUMMER 2024
Subject Code:3110018 Date:10-07-2024
Subject Name:Physics
Time:02:30 PM TO 05:00 PM Total Marks:70
Instructions:
1. Attempt all questions.
2. Make suitable assumptions wherever necessary.
3. Figures to the right indicate full marks.
4. Simple and non-programmable scientific calculators are allowed.

Marks
Q.1 (a) Define following terms. 03
i. Critical Temperature
ii. Persistent Current
iii. Isotope effect
(b) Explain hot point probe method with necessary diagrams. 04

(c) Explain in detail how Kronig and Penney model explains the origin of 07
band gap in semiconductors.

Q.2 (a) Compare n-Type and p-Type Semiconductors. 03


(b) Distinguish between Type-I and Type-II Superconductivity. 04
(c) Determine the necessary formula for density of hole in Valence Band for 07
Intrinsic Semiconductors.
OR
(c) What are Einstein’s coefficients? Give relation between them and discuss 07
the result.
Q.3 (a) Define: 03
i. Energy Gap
ii. Fermi Function
iii. Density of states
(b) Estimate the position of Fermi Level at 300 K for a material with EC = 04
0.8 eV and EV = 0.5 eV (me* = 0.14m0 and mh* = 0.28m0 , m0 is rest
mass of an electron).
(c) Illustrate Four probe method for thin sheet and bulk sample in detail. 07
OR
Q.3 (a) What are the postulates for free electron theory? 03
(b) In an intrinsic semiconductor, energy gap is 1.3 eV. Evaluate the ratio 04
between its conductivity at temperature 700 K and 400 K.
(c) Show that Junction capacitance is inversely proportional to square root of 07
Reverse biasing Voltage.
Q.4 (a) What do you mean by Photo Voltaic Effect? Write its three applications 03
in the field of engineering.
(b) Using Fermi function, evaluate the temperature at which there is 20 % 04
probability that an electron in solid will have energy 0.3 eV above EF of 3
eV.

1
(c) Explain at least seven properties of Superconductors in detail with 07
necessary diagram and equations.
OR
Q.4 (a) Define : 03
i. Population Inversion
ii. Meta stable state
iii. Active Medium
(b) Explain how the materials are classified into conductors, semiconductors 04
and insulators with the help of energy band diagrams.
(c) Briefly outline the mechanism of superconductivity using BCS theory and 07
explain penetration depth.
Q.5 (a) Compare Direct Band Gap semiconductors and Indirect Band Gap 03
semiconductors
(b) What are Excitons? explain the types of Exciton. 04
(c) (i) Estimate the concentration of holes and electrons in n-type silicon at 04
300 K. If the conductivity is 8 X 104 Ʊ/m. also find these value for p-
type Si. ni = 2.5 X 1016 m-3 ,electron and hole mobility is 1600X10-4
m2/V.Sec and 700X10-4 m2/V.Sec respectively.

(ii) Evaluate the Electron and Hole concentration at room temperature, for 03
a intrinsic semiconductor, if its conductivity at room temperature is 8×10-
4
Ʊ/m. The mobility of Electron and Hole are 0.24 m2/V.Sec and 0.08
m2/V.Sec respectively.

OR
Q.5 (a) List difference between drift and diffusion current 03
(b) Explain in detail the Fermi’s Golden Rule. 04
(c) (i)In a solid consider an energy level lying 0.2 eV above Fermi level. 04
Estimate the probability of this level not being occupied by an electron at
room temperature.

(ii)A rectangular semiconductor specimen of thickness 1 mm is placed in 03


the magnetic field of flux density 0.5 Wb/m2. Current of 1.5 mA is flowing
through the specimen in one direction. Evaluate Hall coefficient of the
material if generated hall voltage is 7.5 mV.

**********************

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