FQT4N20L

May 2001

QFET TM

FQT4N20L
200V LOGIC N-Channel MOSFET

General Description Features

These N-Channel enhancement mode power field effect • 0.85A, 200V, RDS(on) = 1.35Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.0 nC)
planar stripe, DMOS technology. • Low Crss ( typical 6.0 pF)
This advanced technology has been especially tailored to • Fast switching
minimize on-state resistance, provide superior switching • 100% avalanche tested
performance, and withstand high energy pulse in the • Improved dv/dt capability
avalanche and commutation mode. These devices are well • Low level gate drive requirement allowing direct
suited for high efficiency switching DC/DC converters, opration from logic drivers
switch mode power supply, DC-AC converters for
uninterrupted power supply, motor control.

D
!
D
"

! " "
S G! "

G SOT-223 !
FQT Series S

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol Parameter FQT4N20L Units

VDSS Drain-Source Voltage 200 V
ID Drain Current - Continuous (TC = 25°C) 0.85 A
- Continuous (TC = 70°C) 0.68 A
IDM Drain Current - Pulsed (Note 1) 3.4 A
VGSS Gate-Source Voltage ± 20 V
EAS Single Pulsed Avalanche Energy (Note 2) 52 mJ
IAR Avalanche Current (Note 1) 0.85 A
EAR Repetitive Avalanche Energy (Note 1) 0.22 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns
PD Power Dissipation (TC = 25°C) 2.2 W
- Derate above 25°C 0.018 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
TL 300 °C
1/8" from case for 5 seconds

Thermal Characteristics
Symbol Parameter Typ Max Units
RθJA Thermal Resistance, Junction-to-Ambient * -- 57 °C/W
* When mounted on the minimum pad size recommended (PCB Mount)

©2001 Fairchild Semiconductor Corporation Rev. A, May 2001

 FQT4N20L
Electrical Characteristics TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 200 -- -- V
∆BVDSS/ Breakdown Voltage Temperature
ID = 250 µA, Referenced to 25°C -- 0.16 -- V/°C
∆TJ Coefficient
IDSS VDS = 200 V, VGS = 0 V -- -- 1 µA
Zero Gate Voltage Drain Current
VDS = 160 V, TC = 125°C -- -- 10 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -- -- -100 nA

On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1.0 -- 2.0 V
RDS(on) Static Drain-Source VGS = 10 V, ID = 0.425 A 1.10 1.35
-- Ω
On-Resistance VGS = 5 V, ID = 0.425 A 1.13 1.40
gFS Forward Transconductance VDS = 30 V, ID = 0.425 A (Note 4) -- 1.42 -- S

Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V, -- 240 310 pF
Coss Output Capacitance f = 1.0 MHz -- 36 45 pF
Crss Reverse Transfer Capacitance -- 6 8 pF

Switching Characteristics
td(on) Turn-On Delay Time -- 7 25 ns
VDD = 100 V, ID = 3.8 A,
tr Turn-On Rise Time -- 70 150 ns
RG = 25 Ω
td(off) Turn-Off Delay Time -- 15 40 ns
tf (Note 4, 5)
Turn-Off Fall Time -- 40 90 ns
Qg Total Gate Charge VDS = 160 V, ID = 3.8 A, -- 4.0 5.2 nC
Qgs Gate-Source Charge VGS = 5 V -- 1.0 -- nC
Qgd Gate-Drain Charge (Note 4, 5) -- 1.9 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current -- -- 0.85 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 3.4 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.85 A -- -- 1.5 V
trr Reverse Recovery Time VGS = 0 V, IS = 3.8 A, -- 90 -- ns
Qrr Reverse Recovery Charge dIF / dt = 100 A/µs (Note 4) -- 0.25 -- µC

Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 108mH, IAS = 0.85A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 3.8A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature

©2001 Fairchild Semiconductor Corporation Rev. A, May 2001

 FQT4N20L
Typical Characteristics

VGS
Top : 10 V
8.0 V
6.0 V
5.0 V
4.5 V
0
4.0 V
10 3.5 V

ID , Drain Current [A]

ID , Drain Current [A]

0
Bottom : 3.0 V 10
150℃

25℃
-55℃
※ Notes :
1. 250μ s Pulse Test ※ Notes :
2. TC = 25℃ 1. VDS = 30V
-1 2. 250μ s Pulse Test
10
-1
-1 0 1
10
10 10 10 0 2 4 6 8 10
VDS , Drain-Source Voltage [V] VGS , Gate-Source Voltage [V]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

8
IDR , Reverse Drain Current [A]
Drain-Source On-Resistance

6
VGS = 5 V
0
RDS(on) , [ Ω ]

10
VGS = 10V
4

150℃ 25℃
2
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test

-1
0 10
0 2 4 6 8 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
ID , Drain Current [A] VSD , Source-Drain Voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current
and Temperature

450 12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
400 Crss = Cgd
10
350 VDS = 40V
VGS, Gate-Source Voltage [V]

VDS = 100V
300 Ciss 8
VDS = 160V
Capacitance [pF]

250
6
200
Coss
150 ※ Notes : 4
1. VGS = 0 V
2. f = 1 MHz
100
Crss 2
50
※ Note : ID = 3.8 A

0 0
10
-1
10
0
10
1 0 1 2 3 4 5 6 7 8

VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

©2001 Fairchild Semiconductor Corporation Rev. A, May 2001

 FQT4N20L
Typical Characteristics (Continued)

1.2 3.0

2.5
Drain-Source Breakdown Voltage

1.1

Drain-Source On-Resistance
BV DSS , (Normalized)

RDS(ON) , (Normalized)
2.0

1.0 1.5

1.0

0.9 ※ Notes :
1. VGS = 0 V
※ Notes :
2. ID = 250 μ A 0.5 1. VGS = 10 V
2. ID = 0.425 A

0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

1.0
1
10 Operation in This Area
is Limited by R DS(on)

0.8
100 µs
0 1 ms
10
10 ms
ID, Drain Current [A]
ID, Drain Current [A]

100 ms 0.6

DC
-1
10
0.4

10
-2 ※ Notes :
1. TC = 25 C
o 0.2
o
2. TJ = 150 C
3. Single Pulse

-3
10 0.0
10
-1
10
0
10
1
10
2 25 50 75 100 125 150

VDS, Drain-Source Voltage [V] TC, Case Temperature [℃]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature

2
10
(t), T h e rm a l R e s p o n s e

D = 0 .5

※ N o te s :
1 0 .2
10 1 . Z θ J C( t ) = 5 7 ℃ /W M a x .
2 . D u ty F a c to r , D = t 1 / t 2
0 .1 3 . T J M - T C = P D M * Z θ J C( t )

0 .0 5

0 .0 2
0
10
0 .0 1
PDM
θ JC

t1
s in g le p u ls e
Z

t2

-1
10
-5 -4 -3 -2 -1 0 1 2 3
10 10 10 10 10 10 10 10 10
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]

Figure 11. Transient Thermal Response Curve

©2001 Fairchild Semiconductor Corporation Rev. A, May 2001

 FQT4N20L
Gate Charge Test Circuit & Waveform

VGS
Same Type
50KΩ
as DUT Qg
12V 200nF
300nF 5V
VDS
VGS Qgs Qgd

DUT
3mA

Charge

Resistive Switching Test Circuit & Waveforms

RL VDS
VDS 90%

VGS VDD
RG

10%
VGS
5V DUT
td(on) tr td(off)
tf
t on t off

Unclamped Inductive Switching Test Circuit & Waveforms

L 1 BVDSS
VDS EAS = ---- L IAS2 --------------------
2 BVDSS - VDD
BVDSS
ID
IAS
RG
VDD ID (t)

10V DUT VDD VDS (t)

tp
tp Time

©2001 Fairchild Semiconductor Corporation Rev. A, May 2001

 FQT4N20L
Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT +

VDS

I SD
L

Driver
RG
Same Type
as DUT VDD

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

Gate Pulse Width

VGS D = --------------------------
Gate Pulse Period 10V
( Driver )

IFM , Body Diode Forward Current

I SD
( DUT ) di/dt

IRM

Body Diode Reverse Current

VDS
( DUT ) Body Diode Recovery dv/dt

VSD VDD

Body Diode
Forward Voltage Drop

©2001 Fairchild Semiconductor Corporation Rev. A, May 2001

 FQT4N20L
Package Dimensions

SOT-223

0.08MAX

0.65 ±0.20
3.00 ±0.10
MAX1.80

1.75 ±0.20

(0.60)
3.50 ±0.20

7.00 ±0.30
+0.04
0.06 –0.02
(0.60)

2.30 TYP 0.70 ±0.10 °

10
+0.10 0°~
(0.95) 4.60 ±0.25 (0.95) 0.25 –0.05
1.60 ±0.20

6.50 ±0.20
(0.46)
(0.89)

©2001 Fairchild Semiconductor Corporation Rev. A, May 2001

 TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.

ACEx™ FAST® OPTOPLANAR™ SuperSOT™-3

Bottomless™ FASTr™ PACMAN™ SuperSOT™-6
CoolFET™ FRFET™ POP™ SuperSOT™-8
CROSSVOLT™ GlobalOptoisolator™ PowerTrench® SyncFET™
DenseTrench™ GTO™ QFET™ TinyLogic™
DOME™ HiSeC™ QS™ UHC™
EcoSPARK™ ISOPLANAR™ QT Optoelectronics™ UltraFET®
E2CMOS™ LittleFET™ Quiet Series™ VCX™
EnSigna™ MicroFET™ SLIENT SWITCHER®
FACT™ MICROWIRE™ SMART START™
FACT Quiet Series™ OPTOLOGIC™ Stealth™

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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support
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or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

©2001 Fairchild Semiconductor Corporation Rev. H2