Introduction to Semiconductor Devices NPTEL Online Course, July - Oct 2024

ISD 2024 - Week 1 Assignment

There are 10 questions for a total of 20 marks.

1. (2 marks) According to de Broglie’s hypothesis, all matter exhibits wave-like behaviour. Among the
-

following particles, which one will have the smallest wavelength associated with it for the same velocity?

XB - Uma a Ym
A. Proton =
=

B. Electron

C. Alpha particle
mass
D. Cricket ball -

higher
2. (2 marks) Consider an electron moving in a circular orbit around a nucleus. If the radius of the orbit is
halved, how does the de Broglie wavelength of the electron change? 2πu = nYB
A. remains the same

B. halves

C. doubles

D. four times smaller

Reflect and remember: The quantization condition states that the circumference of the orbit
must be an integer multiple of the de Broglie wavelength. What if the wavelength is not an integer
multiple of the circumference of the orbit?

3. (2 marks) The wave function of a particle moving in free space is given by, = (eikx + 4e ikx ). The
-
energy of the particle is .
(Recall: The time-independent Schrödinger equation H =E )
0

+ Ey
th
=
3~2 k2
A. 2m

B. ~2 k 2
2m a
E =

~2 k 2 this
C. m solve
5~2 k2
D. 2m

Reflect and remember: The given wave function is a linear combination of two plane waves. In
free space, each plane wave represents a possible state of a free particle with a certain momentum.
Understanding how each part of the wave function contributes to the overall energy is crucial.

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Introduction to Semiconductor Devices NPTEL Online Course, July - Oct 2024

4. (2 marks) Silicon has a diamond-cubic lattice structure with a lattice constant a = 5.43 Å as shown in the
figure below. The silicon crystal is formed by periodic repetition of the unit cells in the x, y and z directions.
In each unit cell, 8 atoms at the corners are shared with 8 adjacent cells. Hence, the corner atoms are
considered to contribute one-eighth of the unit cell. The 6 atoms in center of each face are shared by two
adjacent unit cells. Hence, they contribute one-half to the unit cell. Lastly, the 4 atoms within the body of
1
the unit cell contribute fully. Hence the e↵ective number of atoms per unit cell is 8 ⇥ 8 + 12 ⇥ 6 + 4 ⇥ 1 = 8
atoms. Determine the density of atoms is # atoms/cm3 . (Recall: density= # atoms per unit
cell/volume of unit cell)

0 543nm
a
.
=

Hatomr = S

volume a

6x102
=

I
~ .

22

#atoms
Some am
5
X
~ .

-
A. 1.6 ⇥ 1022
Density =
volume
B. 5 ⇥ 1022

C. 2.5 ⇥ 1022

D. 1 ⇥ 1022

Reflect and remember: The density of atoms in the crystal lattice is important when we discuss
doping later in the course. By doping we replace the Si atoms with another element (B, P, As, etc).
Also, note the units - we use cm 3 to denote density throughout this course. Can you guess the
density of atoms for other semiconductors like Ge and GaAs?

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Introduction to Semiconductor Devices NPTEL Online Course, July - Oct 2024

5. (2 marks) Consider an electron confined in an infinite square well of width 1 nm. If an electron undergoes
a transition from the first excited state (n = 2) to the ground state (n = 1), it emits a photon.
net2 nE
2
Calculate the wavelength of the photon emitted during the same transition.
En =
-
= -

I
Le

um
A. 1.1 pm am
Dx =

B. 1.1 mm 3 El
E2-E ,
.

C. 1.1 nm

D. 1.1 µm

Reflect and remember: The energy levels are quantized for a particle confined in an infinite 1D
potential well. Transitions between these energy levels define the absorption/emission of photons
within a semiconductor.

6. (2 marks) There are two semiconducting materials with the energy band gaps Eg,A = 0.7 eV and Eg,B =
1.4 eV . Which of the following is true regarding the probability P (i) of ehp generation at the same T?

A. P (B) = P (A) 6= 1
P: <exp(-Eg/ki) ·

B. P (B) >> P (A)

C. P (B) << P (A) Egis EgA >

D. P (B) = P (A) = 1 PisPa-

Reflect and remember: The probability of electron-hole pair generation in a semiconductor follows
the thermal generation process that depends on the temperature of the lattice. Guess what happens
if the bandgap is too small or large?

7. (2 marks) Consider two semiconductor materials: Germanium with an energy band gap of 0.7 eV and
Sapphire with an energy band gap of 9.9 eV. Which material will be transparent for visible light of wavelength

E
~
= 400 nm? >
-
= ev
Ph
A. Germanium Absorption
Eg
-

Eph >

Transmission
B. Sapphire

Eph(Eg-
C. Both Germanium and Sapphire

D. Neither Germanium nor Sapphire

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Introduction to Semiconductor Devices NPTEL Online Course, July - Oct 2024

8. (2 marks) Identify which of the following statements is true from the given figure.

(i) Si is an indirect band gap material, and GaAs is a direct band gap material.
(ii) Momentum is conserved in an indirect band gap material.
(iii) Si is a direct band gap material, and GaAs is an indirect band gap material.
(iv) Momentum is conserved in a direct band gap material.

A. (i) is incorrect and (ii) is correct

B. (ii) and (iv) are correct

C. (i) and (iv) are correct

D. (iii) is correct and (iv) is incorrect

9. (2 marks) (EC-GATE 2014) Cut o↵ wavelength (in µm) of light that can be used for intrinsic excitation

1125
Y
of semiconductor material of band gap 1.1 eV .
- = =
um
A. 0.85 B. 1.125 C. 1.45 D. 2.25

10. (2 marks) (PH-GATE 2014) The recoil momentum of an atom is pA when it emits an infrared photon of
pA
wavelength 1500 nm , and it is pB when it emits a photon of visible wavelength 500 nm . The ratio of pB

4p
is given by .

A. 1 B. p1 C. 1
D.
p
3
x =
- = =
3 3

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Introduction to Semiconductor Devices NPTEL Online Course, July - Oct 2024

ISD 2024 - Week 2 Assignment

There are 10 questions for a total of 20 marks.

1. (2 marks) Choose the correct statement.

(i) In a doped semiconductor, the ionized dopants (donor/acceptors) can freely move in the lattice.
(ii) In a doped semiconductor, the ionized dopants (donor/acceptors) do not directly contribute to the
current flow.
They are
fixed in the lattice
.

A. (i)

B. (ii)

C. Both (i) and (ii)

D. Neither (i) nor (ii)

2. (2 marks) The electron concentration in a piece of Si maintained at 300 K under equilibrium condition is
105 cm 3. The hole concentration is cm 3 (take ni = 1010 cm 3 ).

A. 1015 Mass action law

B. 105

C. 1010
P =

=to
D. insufficient information
- an ,
a
119
3. (2 marks) A particular intrinsic semiconductor has a resistivity of 100 ⌦ cm at T = 300 K and 10 ⌦ cm at
T = 330 K. If the mobility of the carriers and energy band gap remains unchanged with temperature, the

=exp
E
band gap of the semiconductor is . Recall ni / T 3/2 exp( 2kTg )

A. 1.13 eV B. 1.23 eV C. 1.33 eV D. 1.43 eV

4. (2 marks) Consider silicon doped with Boron to a concentration 4⇥1015 atoms/cm3 . If ni = 1.5⇥1010 cm 3

and VT = 26 meV at T = 300 K. Compared to undoped silicon, the Fermi level of doped silicon .

A. shifts by 0.15 eV towards EV

Ei-EF = ki In Nalnit
B. shifts by 0.325 eV towards EC
~
0 .
325 eV .

Band
C. shifts by 0.325 eV towards EV valence
D. shifts by 0.25 eV towards EC
Towards

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Introduction to Semiconductor Devices NPTEL Online Course, July - Oct 2024

5. (2 marks) Find the correct plot that depicts the position of the Fermi level corresponding to non-degenerate
doping for an n-type and p-type material.

A. (d) B. (a) C. (b) D. (c)

6. (2 marks) Choose the incorrect statement regarding the mobility of carriers in a semiconductor material.
*
A. The unit of mobility is cm2 /(V sec).

B. Due to higher lattice force experienced by holes, µp > µn .

m me

C. For a semiconductor material, surface mobility is smaller than the bulk.

Ente
D. Mobility depends on temperature.

7. (2 marks) (GATE-PH2011) For an intrinsic semiconductor, m⇤e and m⇤h are e↵ective masses of electrons
and holes near the corresponding band edges respectively. At finite temperature, the position of the Fermi

/)
level depends on . *

In (Mp
-Emidgap
=
A. m⇤e not on m⇤h EF ,
B. m⇤h not on m⇤e

C. both m⇤e and m⇤h

D. neither m⇤e nor m⇤h

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Introduction to Semiconductor Devices NPTEL Online Course, July - Oct 2024

8. (2 marks) (GATE - EC2015) A piece of silicon is doped uniformly with phosphorous with a doping
concentration of 1016 cm 3. The expected value of mobility versus doping concentration for silicon assuming
full dopant ionization is shown below. The charge of an electron is 1.6 ⇥ 10 19 C. The conductivity (in
S cm 1) of the silicon sample at 300 K is .

A. 4.5
&= nqMi + palp nqpn
B. 10.2
16x1019 1 92 Skun
101
.
=

C. 1.92 ,
1200 +

D. 16.8

9. (2 marks) (GATE-PH2021) The donor concentration in a sample of n-type silicon is increased by a factor
of 100. Assuming the sample to be non-degenerate, the shift in the Fermi level (in meV ) at 300 K (rounded
o↵ to nearest integer) is . (Given: kT = 25 meV at 300 K)

A. 165.5
EF , -Eri = kiln (Nalni)
(100 Np/ni)
B. 218.2
15 In
C. 115.5 EF2-EFi =

ev
~ Inc00 0 115
D. 82.75 .
=

EFa-Ef ,

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Introduction to Semiconductor Devices NPTEL Online Course, July - Oct 2024

10. (2 marks) (GATE-EC2024) For a non-degenerately doped n-type silicon, which one of the following plots
represents the temperature (T) dependence of free electron concentration (n)?

A. (b)
to Lectura
B. (c)
Refer
C. (a)

D. (d)

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Introduction to Semiconductor Devices NPTEL Online Course, July - Oct 2024

ISD 2024 - Week 3 Assignment

There are 10 questions for a total of 20 marks.

1. (2 marks) According to the Einstein relation, for any semiconductor the ratio of di↵usion constant to
-

mobility of carriers.
KT
A. Depends upon the type of the semiconductor. *
q
=

B. Varies with the lifetime of the semiconductor. M

C. Is a universal constant

D. Depends upon the temperature of the semiconductor

2. (2 marks) If the mobility of minority carriers in an N-type semiconductor is 480 cm2 /V sec then what is
the di↵usion length of these minority carriers within the semiconductor (assuming minority carrier lifetime
is 10µs)?

A. 353 µm P q Ep·

02rax10x156
B. 3524 µm

C. 111.5 µm
=
#30x0 .

D. 181.48 µm

3. (2 marks) Assume the donor concentration in an n-type semiconductor at T = 300 K is given by

Nd (x) = 1016 e x/L

where L = 2 ⇥ 10 2 cm. Determine the induced electric field (V /cm) at x = 1 ⇥ 10 4 cm

A. 4.13 B. 1.29 C. 2.45 D. 3

4. (2 marks) In an n-type semiconductor bar, there is an increase in electron concentration from left to right
and an electric field exists pointing to the left. If we double the electron concentration everywhere, what

↑ Jany FrquE
will happen to the di↵usion current and drift current?
=

A. Di↵usion current doubles and drift no changes

B. Both doubles

C. Drift current doubles and di↵usion no changes ↑ diff =

Dq .
.

&
D. No change in both currents

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Introduction to Semiconductor Devices NPTEL Online Course, July - Oct 2024

5. (2 marks) Consider a hypothetical energy band diagram as shown in fig.1 The sketch of electric field (E)
as a function of x is best described by

Ed

A. D

B. B

C. A

D. C

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Introduction to Semiconductor Devices NPTEL Online Course, July - Oct 2024

For Questions 6-9 Consider a semiconductor with following parameters q = 1.6 ⇥ 10 19 C, µn =

@n
1200 cm2 /V-s, kT /q = 26 mV, n = 2 ⇥ 1015 cm 3, E = 400 V/cm and @x = 2 ⇥ 1020 cm 3

Answer the following questions:

6. (2 marks) Calculate the drift current density.

Tariff =
nqUE
A. 120.5 A/cm2
2x10* x 1 .
6 x1519 1200
,
x 400

B. 1.28 A/cm2
=

C. 153.6 A/cm2 ~ 153 Alcaz

D. 200 A/cm2

026
7. (2 marks) Calculate the di↵usion coefficient Dn . 1200x0
A. 31.2 cm2 /s
Pn =

MnK =

= 31 .
2 mil
B. 20 cm2 /s

C. 3.56 cm2 /s

D. 15.8 cm2 /s

8. (2 marks) Calculate the di↵usion current density.

A. 998.4 A/cm2

B. 9.984 A/cm 2
Joiff
=
-Dr 20
2
2 x 2x10
1.6x1019
C. 998.4 A/cm 31 .

-998 Alt
D. 9.984 A/cm2 =

~
9. (2 marks) calculate the total current density.

A. 845.4 A/cm2

B. 700 A/cm2
Tot =
Jdrift Tdiff
C. 845.4 A/cm2

D. 743.6 A/cm2

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Introduction to Semiconductor Devices NPTEL Online Course, July - Oct 2024

10. (2 marks) In a semiconductor, the minority carrier concentration profile is given by the formula:

⇣ x⌘
n(x) = n(0) exp
L
Which of the following statements is true

Statement 1: A longer di↵usion length L results in a slower decrease in minority carrier concentration with
distance.

Statement 2: A longer di↵usion length L results in a faster decrease in minority carrier concentration with
distance.

A. Both statements are correct

B. None of the statements are correct

C. Statement 1 is correct

D. Statement 2 is correct

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Introduction to Semiconductor Devices NPTEL Online Course, July - Oct 2024

ISD 2024 - Week 4 Assignment

There are 10 questions for a total of 20 marks.

1. (2 marks) According to the depletion approximation, what primarily constitutes the electric field in the
depletion region?
In free
A. Free electrons and holes depletion region
B. Neutral atoms carriers absent So
are
.

C. Ionized dopant atoms contribution is by

imised
D. Both free carriers and dopant atoms .
dopants
For Q2-Q3: Consider an abrupt silicon pn+ (abrupt) junction with a doping profile as shown in the figure
below. Based on the doping profile, answer the following questions.
put ,
xp w

2. (2 marks) Identify the corresponding charge configuration of the pn+ junction.

nt-heavily
doped ,

more

narrower

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Introduction to Semiconductor Devices NPTEL Online Course, July - Oct 2024

A. (b)

B. (a)

C. (d)

D. (c)

3. (2 marks) Identify the corresponding field profile at the pn+ junction from the figure below.

A. (a)

B. (b)
nt -

heavily doped
E decrease that side
sharply on
.

C. (c)

D. (d)

For Q4-Q5: The doping concentrations in an abrupt silicon pn junction at T = 300 K are Na = 1014 cm 3

and Nd = 1018 cm 3. Assume ni = 1010 cm 3, kT /q = 25 mV at 300 K, ✏Si = 11.9, ✏0 = 8.85 ⇥

10 14 F cm 1.

4. (2 marks) The built-in voltage of the pn junction is V.

(
A. 2.1

It
en
Ubi
B. 1.4
=

C. 0.7

D. 3.5

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 Introduction to Semiconductor Devices NPTEL Online Course, July - Oct 2024

5. (2 marks) The total depletion width of the pn junction is µm.

A. 0.12

B. 3.0

C. 12
=
si
D. 24.5

Reflect and remember: What is the depletion width on the n side (xn ) and p side (xp ) of the
pn junction? Analyze how do the depletion widths change when the doping densities are swapped
and when Nd = Na .

6. (2 marks) Using the depletion approximation, charge configuration and field profiles are given for the PN
(abrupt), PN (linear), and PIN junctions at equilibrium conditions. Choose the CORRECT statement.

Pine junt
>
-
> is

constant
PN(linear) Over

-
Eis depletion
n
tic regi
quadra

Ex
A. (a) (i), (b) (ii).(c) (iii) PN(abrupt] +

either side
linearly
B. (a) (ii), (b) (i), (c) (iii)
on
C. (a) (iii), (b) (i), (c) (ii)

D. (a) (i), (b) (iii), (c) (ii)

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Introduction to Semiconductor Devices NPTEL Online Course, July - Oct 2024

Reflect and remember: Analyse how the built-in potential for these junctions and understand their
relationship with their depletion width.

7. (2 marks) Consider a uniform p-type bar within which a thin sheet of positive charge has been embedded.
This charge is fixed in the lattice and cannot move. This forces the majority carrier holes to rearrange and
satisfy Poisson’s equation. Assume sheet charge density Qp in it as shown in the figure. Which of the
following figures represents the electric field?

Fixed charge

A. # C.

B. D.

8. (2 marks) Find the magnitude of the electric field at the center of the depletion region of a Si pn junction
with NA = ND = 1015 atoms cm 3 and built-in potential of 0.6 V . Take ✏Si = 12✏0 , where ✏0 =
8.85 ⇥ 10 14 F/cm.

A. 94.5 M V /cm
Eman =

B. 94.5 kV /cm

C. 9.5 M V /cm epletion

D. 9.5 kV /cm

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Introduction to Semiconductor Devices NPTEL Online Course, July - Oct 2024

9. (2 marks) (EC-GATE 2016) Consider a silicon p-n junction with a uniform acceptor doping concentration
of 1017 cm 3 on the p-side and a uniform donor doping concentration of 1016 cm 3 on the n-side. No external
voltage is applied to the diode. Assume, ni = 1.5 ⇥ 1010 cm 3, ✏Si = 12 ⇥ ✏0 = 12 ⇥ 8.85 ⇥ 10 14 F/cm.

The magnitude of charge per unit junction area (nC/cm2 ) in the depletion region on the p-side is .

Wp = w
A. 100

B. 500 "bi ,
W
,

ND
C. 50 Na +
D. 20 & =
Wp Na. .
e -
A
10. (2 marks) (EC-GATE 2018) A junction is made between p-Si with doping density NA1 = 1015 cm 3 and
p-Si with doping density NA2 = 1017 cm 3. Given Boltzmann constant K = 1.38 ⇥ 10 23 JK 1 , electronic
charge q = 1.6 ⇥ 10 19 C. At room temperature (T = 300 K), the magnitude of the built-in potential (in
Volts) will be .

Ybi
In
A. 0.12
=

B. 1.2

C. 0.8

D. 2.5

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