PART-A (5*2 = 10 Marks)

1. Differentiate latching and holding current of an SCR using its static VI characteristic

2. Enumerate the advantages of power MOSFET over power BJT

▪ Power MOSFET has lower switching losses but its on state resistance and conduction losses are
more
▪ A BJT has higher switching losses. So at high frequency applications, Power MOSFET is the
obvious device.
▪ But at lower operating frequencies (less than 10 to 30 kHZ) ,BJT is superior
▪ BJT: Current controlled device , Bipolar device
▪ MOSFET: Voltage controlled device, Unipolar device as its operation depends upon the flow of
majority carriers only
▪ MOSFET has positive temp coefficient for resistance. This makes parallel opn of MOSFET easy

3. Draw the switching characteristics of power IGBT.

4. Enumerate the advantages of WBG devices over silicon made devices

Wide bandgap (WBG) devices, which are based on materials like silicon carbide (SiC) and
gallium nitride (GaN), offer several significant advantages over traditional silicon (Si) devices.
Here are some key benefits:

▪ Higher Efficiency: WBG devices can operate at higher efficiencies due to their ability to
handle higher voltages and currents with lower losses. This is particularly beneficial in power
electronics applications, leading to reduced energy consumption and heat generation.
▪ Higher Temperature Tolerance: WBG materials can withstand higher temperatures
compared to silicon. This means that WBG devices can operate in more demanding
environments and often require less cooling, which can lead to simpler and more reliable
thermal management.
▪ Higher Switching Frequencies: These devices can switch on and off more rapidly than
silicon devices, which enables higher frequency operation. This is advantageous in
applications like radio frequency (RF) amplifiers and high-speed power converters.
 ▪ Reduced Size and Weight: Due to their higher efficiency and higher switching frequencies,
WBG devices can enable the design of smaller and lighter electronic systems. This is
especially important in aerospace and automotive applications where size and weight are
critical.
▪ Improved Power Density: WBG devices can handle higher power densities, which means
they can manage more power within a smaller footprint. This results in more compact power
electronics systems.
▪ Greater Voltage Tolerance: They can operate at much higher voltages than silicon devices.
This makes them suitable for high-voltage power applications, such as electric vehicles (EVs)
and industrial motor drives.
▪ Better Thermal Conductivity: Materials like SiC have better thermal conductivity than
silicon, which helps in more efficient heat dissipation. This enhances the reliability and
longevity of the device by reducing the thermal stress on the components.
▪ Enhanced Reliability: The higher temperature and voltage tolerance of WBG devices
contribute to their robustness and reliability. They are less likely to fail under harsh conditions
compared to traditional silicon devices.
▪ Reduced System Costs: Although WBG devices can be more expensive upfront, their
efficiency and thermal advantages can lead to overall system cost reductions due to lower
cooling requirements, reduced size, and less need for auxiliary components.
▪ Environmental Benefits: Increased efficiency leads to reduced energy consumption and
lower carbon footprints, aligning with global trends towards more sustainable and energy-
efficient technologies.

5. Latching current for an SCR inserted in between a dc voltage source of 200V and the load is 100
mA. Compute the minimum width of the gate pulse current required to turn on this SCR having a
load of an inductance L = 2.0 H.

PART-B (4X4 = 16 Marks)

6. Explain the various types of triggering methods of SCR briefly. Which is the universal method and
why?
Forward Triggering, Gate triggering, dv/dt triggering, Temperature triggering and light triggering.
Among that Gate triggering is the most reliable, simple and efficient way to turn on SCR

7. If T1 is switched ON at t = 0 determine the conduction time of thyristor T1 and the capacitor voltage after
T1 is turned OFF. The inductor carries an initial current of In = 250A
8. Explain the methods adopted for protection of SCRs against over current protection
➢ Over current protection is achieved with the help of circuit breakers and fast acting fuses
➢ CB are used for protection of thyristor against continuous overloads or against surge currents of
long duration as a CB has long tripping time.
➢ But fast-acting fuses is used for protecting SCR against high surge current of very short duration.
➢ Proper coordination is needed for-
• Fault current is interrupted before the thyristor is damaged
• Faulty branches of the network are isolated
➢ In electrical stiff supply networks, magnitude and rate of rise current are not limited by supply
impedance as it is very low.
➢ Fault current and Jn temperature rise in a few millisec. Therefore spl fast acting current limiting
fuses are required
➢ Fuses –one or more fine silver ribbons having very short fusing time
➢ Fault at zero crossing-without fuse –current rises to “A”-follow dotted line
• Fuse melts at “A” An arc is struck
• After an interval current continues to rise
 ➢ Current reaches a peak value-peak let through current “ B”
➢ Fuse current rating = sum of full load current + a marginal over load current
➢ At “C” arcing stops, and fault is cleared. Clearing time tc = tm+ta
➢ Voltage across the fuse during arcing period (arcing or recovery voltage) = Sum of the source
voltages + emf induced in the circuit inductance
➢ If fuse is interrupted, induced emf Ldi/dt - high, arcing voltage –excessive
➢ During fuse design and coordination arcing voltage is limited to less than twice the peak supply
voltage
➢ The tripping time of the circuit breaker and fusing time of the fast acting fuse –properly
coordinated

9. A diode and a 10 Ohm resistor are connected in series to a square wave voltage source of 50 V peak.
The reverse recovery time of the diode is given as 200ns.
a) Find the conduction loss for the diode if the forward dynamic resistance is 0.1 Ohm
b) Find the switching loss of the diode if the input frequency is 100 kHz

PART-C (2X12 = 24 Marks)

10. Explain briefly the switching behavior of a GTO

11. The switching characteristics of a power transistor is given below. The various parameters of the
transistor are : Vcc = 220 V, Vce = 2V, Ics =8 A, td = 4 micro sec, tr =1 micro sec, tn = 50 micro sec,
ts = 3 micro sec, tf =2 micro sec, t0= 40 micro sec, f = 5kHz. Collector to emitter leakage current is
= 2 mA. Determine the average power loss due to turn on and tn. Also find the peak instantaneous
power loss due to collector current during turn on time